Researcher profile

Taichi Wada

Taichi Wada contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 15 - UnverifiedVerification L1Unclaimed author
3works
0followers
2topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2020arXiv

Real spin and pseudospin topologies in the noncentrosymmetric topological nodal-line semimetal CaAgAs

We present the topology of spin-split Fermi surface of CaAgAs as determined by de Haas-van Alphen (dHvA) effect measurements combined with ab initio calculations. We have determined the torus-shaped nodal-line Fermi surface from the dHvA oscillations of $β$ and $γ$ orbits. The former orbit encircles the nodal-line, while the latter does not. Nevertheless, a nontrivial Berry phase is found for both orbits. The nontrivial phase of $β$ arises from the orbital characters, which can be expressed as a pseudospin rotating around the nodal-line. On the other hand, the phase of $γ$ is attributed to the vortex of real spin texture induced by an antisymmetric spin-orbit interaction. Our result demonstrates that both the real- and pseudo-spin textures are indispensable in interpreting the electronic topology in noncentrosymmetric nodal-line semimetals.

preprint2019arXiv

Hole-Doped M4SiTe4 (M = Ta, Nb) as an Efficient p-Type Thermoelectric Material for Low-Temperature Applications

Solid-state thermoelectric cooling is expected to be widely used in various cryogenic applications such as local cooling of superconducting devices. At present, however, thermoelectric cooling using p- and n-type Bi2Te3-based materials has been put to practical use only at room temperature. Recently, M4SiTe4 (M = Ta, Nb) has been found to show excellent n-type thermoelectric properties down to 50 K. This paper reports on the synthesis of high-performance p-type M4SiTe4 by Ti doping, which can be combined with n-type M4SiTe4 in a cooling device at low temperatures. The thermoelectric power factor of p-type M4SiTe4 reaches a maximum value of approximately 60 uW cm-1 K-2 at 210 K and exceeds the practical level in a wide temperature range of 130-270 K. A finite temperature drop by Peltier cooling was also achieved in a cooling device made of p- and n-type Ta4SiTe4 whisker crystals. These results clearly indicate that M4SiTe4 is promising to realize a practical thermoelectric cooler for use at low temperatures, which are not covered by Bi2Te3-based materials.

preprint2018arXiv

Large Thermoelectric Power Factor in One-Dimensional Telluride Nb4SiTe4 and Substituted Compounds

We found that whisker crystals of Mo-doped Nb4SiTe4 show high thermoelectric performances at low temperatures, indicated by the largest power factor of 70 microW cm-1 K-2 at 230-300 K, much larger than those of Bi2Te3-based practical materials. This power factor is smaller than the maximum value in the 5d analogue Ta4SiTe4, but is comparable to that with a similar doping level. First principles calculation results suggest that the difference in thermoelectric performances between Nb and Ta compounds is caused by the much smaller band gap in Nb4SiTe4 than that in Ta4SiTe4, due to the weaker spin-orbit coupling in the former. We also demonstrated that the solid solution of Nb4SiTe4 and Ta4SiTe4 shows a large power factor, indicating that their combination is promising as a practical thermoelectric material, as in the case of Bi2Te3 and Sb2Te3. These results advance our understanding of the mechanism of high thermoelectric performances in this one-dimensional telluride system, as well as indicating the high potential of this system as a practical thermoelectric material for low temperature applications.