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T. Shinjo

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el physics.app-ph quant-ph

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preprint2020arXiv

Detection of Ferromagnetic Resonance from 1 nm-thick Co

To explore the further possibilities of nanometer-thick ferromagnetic films (ultrathin ferromagnetic films), we investigated the ferromagnetic resonance (FMR) of 1 nm-thick Co film. Whilst an FMR signal was not observed for the Co film grown on a SiO2 substrate, the insertion of a 3 nm-thick amorphous Ta buffer layer beneath the Co enabled the detection of a salient FMR signal, which was attributed to the smooth surface of the amorphous Ta. This result implies the excitation of FMR in an ultrathin ferromagnetic film, which can pave the way to controlling magnons in ultrathin ferromagnetic films.

preprint2020arXiv

Sizable spin-transfer torque in Bi/Ni80Fe20 bilayer film

The search for efficient spin conversion in Bi has attracted great attention in spin-orbitronics. In the present work, we employ spin-torque ferromagnetic resonance to investigate spin conversion in Bi/Ni80Fe20(Py) bilayer films with continuously varying Bi thickness. In contrast with previous studies, sizable spin-transfer torque (i.e., a sizable spin-conversion effect) is observed in Bi/Py bilayer film. Considering the absence of spin conversion in Bi/yttrium-iron-garnet bilayers and the enhancement of spin conversion in Bi-doped Cu, the present results indicate the importance of material combinations to generate substantial spin-conversion effects in Bi.

preprint2016arXiv

Gate-tunable spin-charge conversion and a role of spin-orbit interaction in graphene

The small spin-orbit interaction of carbon atoms in graphene promises a long spin diffusion length and potential to create a spin field-effect transistor. However, for this reason, graphene was largely overlooked as a possible spin-charge conversion material. We report electric gate tuning of the spin-charge conversion voltage signal in a single-layer graphene. Using spin pumping from yttrium iron garnet ferrimagnetic insulator and ionic liquid top gate we determined that the inverse spin Hall effect is the dominant spin-charge conversion mechanism in a single-layer graphene. From the gate dependence of the electromotive force we showed dominance of the intrinsic over Rashba spin-orbit interaction: a long-standing question in graphene research.

preprint2015arXiv

Precise determination of two-carrier transport properties in the topological insulator TlBiSe$_2$

We report the electric transport study of the three-dimensional topological insulator TlBiSe$_2$. We applied a newly developed analysis procedure and precisely determined two-carrier transport properties. Magnetotransport properties revealed a multicarrier conduction of high- and low-mobility electrons in the bulk, which was in qualitative agreement with angle-resolved photoemission results~[K. Kuroda $et~al.$, Phys. Rev. Lett. $\bm{105}$, 146801 (2010)]. The temperature dependence of the Hall mobility was explained well with the conventional Bloch-Gr{ü}neisen formula and yielded the Debye temperature $\varTheta_{\rm{D}}=113 \pm 14$~K. The results indicate that the scattering of bulk electrons is dominated by acoustic phonons.

preprint2013arXiv

Giant enhancement of spin pumping efficiency using Fe3Si ferromagnet

Spincurrentronics, which involves the generation, propagation and control of spin currents, has attracted a great deal of attention because of the possibility of realizing dissipation-free information propagation. Whereas electrical generation of spin currents originally made the field of spincurrentronics possible, and significant advances in spin-current devices has been made, novel spin-current-generation approaches such as dynamical methods have also been vigorously investigated. However, the low spin-current generation efficiency associated with dynamical methods has impeded further progress towards practical spin devices. Here we show that by introducing a Heusler-type ferromagnetic material, Fe3Si, pure spin currents can be generated about twenty times more efficiently using a dynamical method. This achievement paves the way to the development of novel spin-based devices.