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T. Petrisor

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cond-mat.mtrl-sci cond-mat.supr-con

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preprint2012arXiv

Magnetic and structural anisotropies of Co2FeAl Heusler alloy epitaxial thin films

This paper shows the correlation between chemical order, lattice strains and magnetic properties of Heusler Co2FeAl films epitaxially grown on MgO(001). A detailed magnetic characterization has been performed using vector field magnetometery combined with numerical Stoner-Wohlfarth analysis. We demonstrate the presence of three types of in-plane anisotropies: one biaxial, as expected for the cubic symmetry, and other two uniaxial ones. The three anisotropies show different behavior with the annealing temperature. The biaxial anisotropy shows a monotonous increase. The uniaxial anisotropy, parallel with the hard biaxial axes, related to the chemical homogeneity, decreases, while the other, supposed to have magnetostatic origin, remains constant.

preprint2012arXiv

Reduction of spin polarization by incoherent tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers

We report on spin polarization reduction by incoherent tunneling in realistic single crystal Co2FeAl/MgO/Co50Fe50 magnetic tunnel junctions (MTJ) compared to reference Fe/MgO/Fe. A large density of misfit dislocations in the Heusler based MTJs has been insured by a thick MgO barrier and its 3.8% lattice mismatch with the Co2FeAl electrode. Our analysis implicates a correlated structural-transport approach. The crystallographic coherence, in the real space, is investigated using High Resolution Transmission Electron Microscopy phase analysis. The electronic transport experiments in variable temperature, fitted with a theoretical extended-Glazman-Matveev model, address different levels of the tunneling mechanisms from direct to multi-center hopping. We demonstrate a double negative impact of dislocations, as extended defects, on the tunneling polarization. Firstly, the breaking of the crystal symmetry destroys the longitudinal and lateral coherence of the propagating Bloch functions. This affects the symmetry filtering efficiency of the Delta_1 states across the (100) MgO barriers and reduces the associated effective tunneling polarization. Secondly, dislocations provide localized states within the MgO gap. This determines temperature activated spin-conserving inelastic tunneling through chains of defects which are responsible for the one order of magnitude drop of the tunnel magnetoresistance from low to room temperature.

preprint2007arXiv

Strong Reduction of the Field-Dependent Microwave Surface Resistance in YBCO with BaZrO_3 Inclusions

We present measurements of the magnetic field dependent microwave surface resistance in laser-ablated YBa$_2$Cu$_3$O$_{7-δ}$ films on SrTiO$_3$ substrates. BaZrO$_3$ crystallites were included in the films using composite targets containing BaZrO$_3$ inclusions with mean grain size smaller than 1 $μ$m. X-ray diffraction showed single epitaxial relationship between BaZrO$_3$ and YBa$_2$Cu$_3$O$_{7-δ}$. The effective surface resistance was measured at 47.7 GHz for 60$< T <$90 K and 0$< μ_0H <$0.8 T. The magnetic field had a very different effect on pristine YBa$_2$Cu$_3$O$_{7-δ}$ and YBa$_2$Cu$_3$O$_{7-δ}$/BaZrO$_3$, while for $μ_0H=$0 only a reduction of $T_c$ in the YBa$_2$Cu$_3$O$_{7-δ}$/BaZrO$_3$ film was observed, consistent with dc measurements. At low enough $T$, in moderate fields YBa$_2$Cu$_3$O$_{7-δ}$/BaZrO$_3$ exhibited an intrinsic thin film resistance lower than the pure film. The results clearly indicate that BaZrO$_3$ inclusions determine a strong reduction of the field-dependent surface resistance. From the analysis of the data in the framework of simple models for the microwave surface impedance in the mixed state we argue that BaZrO$_3$ inclusions determine very steep pinning potentials.