Paper detail

Strong Reduction of the Field-Dependent Microwave Surface Resistance in YBCO with BaZrO_3 Inclusions

We present measurements of the magnetic field dependent microwave surface resistance in laser-ablated YBa$_2$Cu$_3$O$_{7-δ}$ films on SrTiO$_3$ substrates. BaZrO$_3$ crystallites were included in the films using composite targets containing BaZrO$_3$ inclusions with mean grain size smaller than 1 $μ$m. X-ray diffraction showed single epitaxial relationship between BaZrO$_3$ and YBa$_2$Cu$_3$O$_{7-δ}$. The effective surface resistance was measured at 47.7 GHz for 60$< T <$90 K and 0$< μ_0H <$0.8 T. The magnetic field had a very different effect on pristine YBa$_2$Cu$_3$O$_{7-δ}$ and YBa$_2$Cu$_3$O$_{7-δ}$/BaZrO$_3$, while for $μ_0H=$0 only a reduction of $T_c$ in the YBa$_2$Cu$_3$O$_{7-δ}$/BaZrO$_3$ film was observed, consistent with dc measurements. At low enough $T$, in moderate fields YBa$_2$Cu$_3$O$_{7-δ}$/BaZrO$_3$ exhibited an intrinsic thin film resistance lower than the pure film. The results clearly indicate that BaZrO$_3$ inclusions determine a strong reduction of the field-dependent surface resistance. From the analysis of the data in the framework of simple models for the microwave surface impedance in the mixed state we argue that BaZrO$_3$ inclusions determine very steep pinning potentials.