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Researcher profile

M. S. Gabor

M. S. Gabor contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

3 published item(s)

preprint2019arXiv

Spin-orbit torques and magnetization switching in perpendicularly magnetized epitaxial Pd/Co2FeAl/MgO structures

We demonstrate efficient current induced spin orbit torque switching in perpendicularly magnetized epitaxial MgO(001)//Pd/Co2FeAl/MgO heterostructures grown by magnetron sputtering. The advantage of such heterostructures for spin orbit torque MRAM devices is that they allow a unique combination of critical ingredients: i) low resistivity required for reduced electric energy consumption during writing, ii) high TMR ratio required for efficient reading and iii) strong perpendicular magnetic anisotropy for increased thermal stability.

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preprint2013arXiv

Co2 FeAl thin films grown on MgO substrates: Correlation between static, dynamic and structural properties

Co2FeAl (CFA) thin films with thickness varying from 10 nm to 115 nm have been deposited on MgO(001) substrates by magnetron sputtering and then capped by Ta or Cr layer. X-rays diffraction (XRD) revealed that the cubic $[001]$ CFA axis is normal to the substrate and that all the CFA films exhibit full epitaxial growth. The chemical order varies from the $B2$ phase to the $A2$ phase when decreasing the thickness. Magneto-optical Kerr effect (MOKE) and vibrating sample magnetometer measurements show that, depending on the field orientation, one or two-step switchings occur. Moreover, the films present a quadratic MOKE signal increasing with the CFA thickness, due to the increasing chemical order. Ferromagnetic resonance, MOKE transverse bias initial inverse susceptibility and torque (TBIIST) measurements reveal that the in-plane anisotropy results from the superposition of a uniaxial and of a fourfold symmetry term. The fourfold anisotropy is in accord with the crystal structure of the samples and is correlated to the biaxial strain and to the chemical order present in the films. In addition, a large negative perpendicular uniaxial anisotropy is observed. Frequency and angular dependences of the FMR linewidth show two magnon scattering and mosaicity contributions, which depend on the CFA thickness. A Gilbert damping coefficient as low as 0.0011 is found.

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preprint2012arXiv

Reduction of spin polarization by incoherent tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers

We report on spin polarization reduction by incoherent tunneling in realistic single crystal Co2FeAl/MgO/Co50Fe50 magnetic tunnel junctions (MTJ) compared to reference Fe/MgO/Fe. A large density of misfit dislocations in the Heusler based MTJs has been insured by a thick MgO barrier and its 3.8% lattice mismatch with the Co2FeAl electrode. Our analysis implicates a correlated structural-transport approach. The crystallographic coherence, in the real space, is investigated using High Resolution Transmission Electron Microscopy phase analysis. The electronic transport experiments in variable temperature, fitted with a theoretical extended-Glazman-Matveev model, address different levels of the tunneling mechanisms from direct to multi-center hopping. We demonstrate a double negative impact of dislocations, as extended defects, on the tunneling polarization. Firstly, the breaking of the crystal symmetry destroys the longitudinal and lateral coherence of the propagating Bloch functions. This affects the symmetry filtering efficiency of the Delta_1 states across the (100) MgO barriers and reduces the associated effective tunneling polarization. Secondly, dislocations provide localized states within the MgO gap. This determines temperature activated spin-conserving inelastic tunneling through chains of defects which are responsible for the one order of magnitude drop of the tunnel magnetoresistance from low to room temperature.

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