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C. Tiusan

C. Tiusan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

9 published item(s)

preprint2014arXiv

Bending strain-tunable magnetic anisotropy in Co2FeAl Heusler thin film on Kapton

Bending effect on the magnetic anisotropy in 20 nm Co$_{2}$FeAl Heusler thin film grown on Kapton\textregistered{} has been studied by ferromagnetic resonance and glued on curved sample carrier with various radii. The results reported in this letter show that the magnetic anisotropy is drastically changed in this system by bending the thin films. This effect is attributed to the interfacial strain transmission from the substrate to the film and to the magnetoelastic behavior of the Co$_{2}$FeAl film. Moreover two approaches to determine the in-plane magnetostriction coefficient of the film, leading to a value that is close to $λ^{CFA}=14\times10^{-6}$, have been proposed.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Non-reciprocity of spin wave propagation induced by the interface Dzyaloshinskii-Moriya interaction in Py/Pt film structures

Results of a comprehensive study by means of Brillouin spectroscopy, complemented by Ferromagnetic Resonance characterization, of spin waves (SW) propagating in Py/Pt bi-layers, characterized by pronounced interface Dzyaloshinskii-Moriya interactions (IDMI) are reported. Non-conventional wave behavior of SW travelling in opposite directions, characterized by non-reciprocity with respect to the inversion of the sign of the SW wave-number, has been revealed. The value of the effective IDMI constant D has been estimated.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Co2 FeAl thin films grown on MgO substrates: Correlation between static, dynamic and structural properties

Co2FeAl (CFA) thin films with thickness varying from 10 nm to 115 nm have been deposited on MgO(001) substrates by magnetron sputtering and then capped by Ta or Cr layer. X-rays diffraction (XRD) revealed that the cubic $[001]$ CFA axis is normal to the substrate and that all the CFA films exhibit full epitaxial growth. The chemical order varies from the $B2$ phase to the $A2$ phase when decreasing the thickness. Magneto-optical Kerr effect (MOKE) and vibrating sample magnetometer measurements show that, depending on the field orientation, one or two-step switchings occur. Moreover, the films present a quadratic MOKE signal increasing with the CFA thickness, due to the increasing chemical order. Ferromagnetic resonance, MOKE transverse bias initial inverse susceptibility and torque (TBIIST) measurements reveal that the in-plane anisotropy results from the superposition of a uniaxial and of a fourfold symmetry term. The fourfold anisotropy is in accord with the crystal structure of the samples and is correlated to the biaxial strain and to the chemical order present in the films. In addition, a large negative perpendicular uniaxial anisotropy is observed. Frequency and angular dependences of the FMR linewidth show two magnon scattering and mosaicity contributions, which depend on the CFA thickness. A Gilbert damping coefficient as low as 0.0011 is found.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Controlling shot noise in double-barrier magnetic tunnel junctions

We demonstrate that shot noise in Fe/MgO/Fe/MgO/Fe double-barrier magnetic tunnel junctions is determined by the relative magnetic configuration of the junction and also by the asymmetry of the barriers. The proposed theoretical model, based on sequential tunneling through the system and including spin relaxation, successfully accounts for the experimental observations for bias voltages below 0.5V, where the influence of quantum well states is negligible. A weak enhancement of conductance and shot noise, observed at some voltages (especially above 0.5V), indicates the formation of quantum well states in the middle magnetic layer. The observed results open up new perspectives for a reliable magnetic control of the most fundamental noise in spintronic structures.

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preprint2012arXiv

Fe/MgO/Fe (100) textured tunnel junctions exhibiting spin polarization features of single crystal junctions

Crystallographic and spin polarized transport properties of (100) textured and (100) epitaxial Fe/MgO/Fe magnetic tunnel junctions are compared. Strong similarities in the transport properties show that structural coherence and magnetic quality at the 25 nm grain scale in textured junctions are sufficient to issue signatures of the spin polarized transport specific to a single crystal junction. This demonstrates that the lateral coherence of the Bloch tunneling wave function is identically limited in both systems. Our analysis leads to model the textured tunnel junction as a juxtaposition of nanometer sized single crystal junctions, placed in parallel.

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preprint2012arXiv

Magnetic and structural anisotropies of Co2FeAl Heusler alloy epitaxial thin films

This paper shows the correlation between chemical order, lattice strains and magnetic properties of Heusler Co2FeAl films epitaxially grown on MgO(001). A detailed magnetic characterization has been performed using vector field magnetometery combined with numerical Stoner-Wohlfarth analysis. We demonstrate the presence of three types of in-plane anisotropies: one biaxial, as expected for the cubic symmetry, and other two uniaxial ones. The three anisotropies show different behavior with the annealing temperature. The biaxial anisotropy shows a monotonous increase. The uniaxial anisotropy, parallel with the hard biaxial axes, related to the chemical homogeneity, decreases, while the other, supposed to have magnetostatic origin, remains constant.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Reduction of spin polarization by incoherent tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers

We report on spin polarization reduction by incoherent tunneling in realistic single crystal Co2FeAl/MgO/Co50Fe50 magnetic tunnel junctions (MTJ) compared to reference Fe/MgO/Fe. A large density of misfit dislocations in the Heusler based MTJs has been insured by a thick MgO barrier and its 3.8% lattice mismatch with the Co2FeAl electrode. Our analysis implicates a correlated structural-transport approach. The crystallographic coherence, in the real space, is investigated using High Resolution Transmission Electron Microscopy phase analysis. The electronic transport experiments in variable temperature, fitted with a theoretical extended-Glazman-Matveev model, address different levels of the tunneling mechanisms from direct to multi-center hopping. We demonstrate a double negative impact of dislocations, as extended defects, on the tunneling polarization. Firstly, the breaking of the crystal symmetry destroys the longitudinal and lateral coherence of the propagating Bloch functions. This affects the symmetry filtering efficiency of the Delta_1 states across the (100) MgO barriers and reduces the associated effective tunneling polarization. Secondly, dislocations provide localized states within the MgO gap. This determines temperature activated spin-conserving inelastic tunneling through chains of defects which are responsible for the one order of magnitude drop of the tunnel magnetoresistance from low to room temperature.

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preprint2012arXiv

Tunneling in double barrier junctions with 'hot spots'

We investigate electronic transport in epitaxial Fe(100)/MgO/Fe/MgO/Fe double magnetic tunnel junctions with soft barrier breakdown (hot spots). Specificity of these junctions are continious middle layer and Nitrogen doping of the MgO barriers which provides soft breakdown at biases about 0.5V. In the junctions with hot spots we observe quasi-periodic changes in the resistance as a function of bias voltage which point out formation of quantum well states in the middle Fe continuous free layer. The room-temperature oscillations have been observed in both parallel and antiparallel magnetic configurations and for both bias polarizations. A simple model of tunneling through hot spots in the double barrier magnetic junction is proposed to explain qualitatively this effect.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Symmetry Dependent Scattering by Minority Interface Resonance States in Single-crystal Magnetic Tunnel Junctions

Symmetry dependent scattering effect by minority interface resonance states (IRS) has been evidenced in full-epitaxial Fe/MgO/Fe magnetic tunnel junctions (MTJs). Two types of samples with and without carbon doped bottom Fe/MgO interface were fabricated to represent two different types of IRS in the minority channel in the vicinity of the Fermi level. By analysis of the first- principles calculated local density of states (LDOS) and the temperature dependence of conductance in parallel configuration at low bias, we show that the IRS in the carbon free sample is dominated by the delta5 symmetry. This has a major contribution on the majority deltai to delta5 channel scattering and explains the enhancement of the delta5 conductance in the parallel configuration at low temperature. Furthermore, the spectral composition of the IRS in the carbon doped interface is found to be dominated by the delta1 symmetry, which is responsible for the suppression of delta5 channel in the parallel conductance.

0 citations0 reviewsNo code linkedOpen access