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Sungho Kim

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cond-mat.mtrl-sci Computer Vision eess.IV Databases Machine Learning physics.comp-ph

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preprint2020arXiv

NTIRE 2020 Challenge on Real Image Denoising: Dataset, Methods and Results

This paper reviews the NTIRE 2020 challenge on real image denoising with focus on the newly introduced dataset, the proposed methods and their results. The challenge is a new version of the previous NTIRE 2019 challenge on real image denoising that was based on the SIDD benchmark. This challenge is based on a newly collected validation and testing image datasets, and hence, named SIDD+. This challenge has two tracks for quantitatively evaluating image denoising performance in (1) the Bayer-pattern rawRGB and (2) the standard RGB (sRGB) color spaces. Each track ~250 registered participants. A total of 22 teams, proposing 24 methods, competed in the final phase of the challenge. The proposed methods by the participating teams represent the current state-of-the-art performance in image denoising targeting real noisy images. The newly collected SIDD+ datasets are publicly available at: https://bit.ly/siddplus_data.

preprint2020arXiv

The 1st Agriculture-Vision Challenge: Methods and Results

The first Agriculture-Vision Challenge aims to encourage research in developing novel and effective algorithms for agricultural pattern recognition from aerial images, especially for the semantic segmentation task associated with our challenge dataset. Around 57 participating teams from various countries compete to achieve state-of-the-art in aerial agriculture semantic segmentation. The Agriculture-Vision Challenge Dataset was employed, which comprises of 21,061 aerial and multi-spectral farmland images. This paper provides a summary of notable methods and results in the challenge. Our submission server and leaderboard will continue to open for researchers that are interested in this challenge dataset and task; the link can be found here.

preprint2016arXiv

Resistive Switching Characteristics of Al/Si3N4/p-Si MIS-Based Resistive Switching Memory Devices

In this study, we proposed and demonstrated a self-rectifying property of silicon nitride (Si3N4)-based resistive random access memory device by employing p-type silicon (p-Si) as bottom electrode. The RRAM devices consisted of Al/Si3N4/p-Si are fabricated by a low presure chemical vapor deposition and exhibited an intrinsic diode property with non-linear current-voltage (I-V) behavior. In addition, compared to conventional metal/insulator/metal (MIM) structure of Al/Si3N4/Ti RRAM cells, operating current in whole bias regions for proposed metal/insulator/semiconductor (MIS) cells has been dramatically lowered because introduced p-Si bottom electrode efficiently suppresses the current in both low and high resistive states. As a result, the results mean that by employing p-Si as bottom electrode the Si3N4-based RRAM cells can be applied to selector-free RRAM cells.

preprint2016arXiv

Resistive Switching Phenomena of HfO2 Films Grown by MOCVD for Resistive Switching Memory Devices

The resistive switching phenomena of HfO2 films grown by metalorganic chemical vapor deposition was studied for the application of ReRAM devices. In the fabricated Pt/HfO2/TiN memory cells, the bipolar resistive switching characteristics were observed, and the set and reset states were measured to be as low as 7 uA and 4 uA, respectively, at VREAD = 1 V. Regarding the resistive switching performance, the stable RS performance was observed under 40 repetitive dc cycling test with the small variations of set/reset voltages and currents, and good retention characteristics over 105 s in both LRS and HRS. These results show the possibility of MOCVD grown HfO2 films as a promising resistive switching materials for ReRAM applications.

preprint2015arXiv

Site occupancy and magnetic properties of Al-substituted M-type strontium hexaferrite

We use first-principles total-energy calculations based on density functional theory to study the site occupancy and magnetic properties of Al-substituted $M$-type strontium hexaferrite SrFe$_{12-x}$Al$_{x}$O$_{19}$ with $x=0.5$ and $x=1.0$. We find that the non-magnetic Al$^{3+}$ ions preferentially replace Fe$^{3+}$ ions at two of the majority spin sites, $2a$ and $12k$, eliminating their positive contribution to the total magnetization causing the saturation magnetization $M_s$ to be reduced as Al concentration $x$ is increased. Our formation probability analysis further provides the explanation for increased magnetic anisotropy field when the fraction of Al is increased. Although Al$^{3+}$ ions preferentially occupy the $2a$ sites at a low temperature, the occupation probability of the $12k$ site increases with the rise of the temperature. At a typical annealing temperature ($> 700\,^{\circ}{\rm C}$) Al$^{3+}$ ions are much more likely to occupy the $12k$ site than the $2a$ site. Although this causes the magnetocrystalline anisotropy $K_1$ to be reduced slightly, the reduction in $M_s$ is much more significant. Their combined effect causes the anisotropy field $H_a$ to increase as the fraction of Al is increased, consistent with recent experimental measurements.

preprint2014arXiv

Structural, elastic and thermal properties of cementite (Fe$_3$C) calculated using Modified Embedded Atom Method

Structural, elastic and thermal properties of cementite (Fe$_3$C) were studied using a Modified Embedded Atom Method (MEAM) potential for iron-carbon (Fe-C) alloys. Previously developed Fe and C single element potentials were used to develop an Fe-C alloy MEAM potential, using a statistically-based optimization scheme to reproduce structural and elastic properties of cementite, the interstitial energies of C in bcc Fe as well as heat of formation of Fe-C alloys in L$_{12}$ and B$_1$ structures. The stability of cementite was investigated by molecular dynamics simulations at high temperatures. The nine single crystal elastic constants for cementite were obtained by computing total energies for strained cells. Polycrystalline elastic moduli for cementite were calculated from the single crystal elastic constants of cementite. The formation energies of (001), (010), and (100) surfaces of cementite were also calculated. The melting temperature and the variation of specific heat and volume with respect to temperature were investigated by performing a two-phase (solid/liquid) molecular dynamics simulation of cementite. The predictions of the potential are in good agreement with first-principles calculations and experiments.

preprint2013arXiv

Theory of magnetic enhancement in strontium hexaferrite through Zn-Sn pair substitution

We study the site occupancy and magnetic properties of Zn-Sn substituted M-type Sr-hexaferrite SrFe$_{12-x}$(Zn$_{0.5}$Sn$_{0.5}$)$_x$O$_{19}$ with x = 1 using first-principles total-energy calculations. We find that in a ground-state configuration Zn-Sn ions preferentially occupy $4f_1$ and $4f_2$ sites unlike the model previously suggested by Ghasemi et al. [J. Appl. Phys, \textbf{107}, 09A734 (2010)], where Zn$^{2+}$ and Sn$^{4+}$ ions occupy the $2b$ and $4f_2$ sites. Density-functional theory calculations show that our model has a lower total energy by more than 0.2 eV per unit cell compared to Ghasemi's model. More importantly, the latter does not show an increase in saturation magnetization ($M_s$) compared to the pure $M$-type Sr-hexaferrite, in disagreement with the experiment. On the other hand, our model correctly predicts a rapid increase in $M_s$ as well as a decrease in magnetic anisotropy compared to the pure $M$-type Sr-hexaferrite, consistent with experimental measurements.

preprint2012arXiv

The effects of Vanadium on the strength of a bcc Fe Σ3(111)[1-10] grain boundary

The effects of micro-alloying element, vanadium, on a bcc Fe Σ3(111)[1-10] symmetric tilt grain boundary strength are studied using density functional theory calculations. The lowest energy configuration of the grain boundary structure are obtained from the first-principles calculations. The substitutional and interstitial point defect formation energies of vanadium in the grain boundary are compared. The substitutional defect is prefered to interstitial one. The segregation energies of vanadium onto the grain boundary and its fractured surfaces are computed. The cohesive energy calculation of the grain boundary with and without vanadium show that vanadium strengthen the bcc iron Σ3(111)[1-10] grain boundary.

preprint2011arXiv

B+-tree Index Optimization by Exploiting Internal Parallelism of Flash-based Solid State Drives

Previous research addressed the potential problems of the hard-disk oriented design of DBMSs of flashSSDs. In this paper, we focus on exploiting potential benefits of flashSSDs. First, we examine the internal parallelism issues of flashSSDs by conducting benchmarks to various flashSSDs. Then, we suggest algorithm-design principles in order to best benefit from the internal parallelism. We present a new I/O request concept, called psync I/O that can exploit the internal parallelism of flashSSDs in a single process. Based on these ideas, we introduce B+-tree optimization methods in order to utilize internal parallelism. By integrating the results of these methods, we present a B+-tree variant, PIO B-tree. We confirmed that each optimization method substantially enhances the index performance. Consequently, PIO B-tree enhanced B+-tree's insert performance by a factor of up to 16.3, while improving point-search performance by a factor of 1.2. The range search of PIO B-tree was up to 5 times faster than that of the B+-tree. Moreover, PIO B-tree outperformed other flash-aware indexes in various synthetic workloads. We also confirmed that PIO B-tree outperforms B+-tree in index traces collected inside the Postgresql DBMS with TPC-C benchmark.

preprint2006arXiv

Modified embedded-atom method interatomic potentials for the Mg-Al alloy system

We developed new modified embedded-atom method (MEAM) interatomic potentials for the Mg-Al alloy system using a first-principles method based on density functional theory (DFT). The materials parameters, such as the cohesive energy, equilibrium atomic volume, and bulk modulus, were used to determine the MEAM parameters. Face-centered cubic, hexagonal close packed, and cubic rock salt structures were used as the reference structures for Al, Mg, and MgAl, respectively. The applicability of the new MEAM potentials to atomistic simulations for investigating Mg-Al alloys was demonstrated by performing simulations on Mg and Al atoms in a variety of geometries. The new MEAM potentials were used to calculate the adsorption energies of Al and Mg atoms on Al (111) and Mg (0001) surfaces. The formation energies and geometries of various point defects, such as vacancies, interstitial defects and substitutional defects, were also calculated. We found that the new MEAM potentials give a better overall agreement with DFT calculations and experiments when compared against the previously published MEAM potentials.