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Researcher profile

Seong-Gon Kim

Seong-Gon Kim contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.comp-ph

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Published work

8 published item(s)

preprint2022arXiv

First principle investigations of the structural, electronic, and phase stability in 2D layered ZnSb

Recently, the two dimensional (2D) materials have become a potential candidates for various technological applications in spintronics and optoelectronics. In the present study, the structural, electronic, and phase stability of 2D layered ZnSb compounds of four different phases viz. wurzite(w), tetragonal (t), hexagonal (h), and orthorhombic (o) have been tuned using the first principle calculations based on density functional theory (DFT). We invoked the Perdew-Burke-Ernzerhof (PBE) functional and the projected augmented wave (PAW) method during all the calculations. Based on our numerical results, we predicted the novel tetragonal phase as stable phase of ZnSb next to existing orthorhombic structure. We reported the pressure induced phase transition between orthorhombic to tetragonal phase at 12.48 GPa/atom. The projected density of states indicates the strong p-d hybridization between Sb-5p and Zn-3d states confirming the nature of strong covalent bonding between them. The electronic band structures suggest that t-ZnSb, w-ZnSb, and h-ZnSb are metallic in nature whereas o-ZnSb is semiconducting with narrow band gap of 0.03 eV using PBE. We predicted the possibility of extracting the two dimensional (2D) monolayer sheet in t-ZnSb and o-ZnSb according to the exfoliation energy criterion. In addition, the 2D monolayer (ML) of o-ZnSb has been predicted to be dynamically stable but that of t-ZnSb is not stable as manifested in phonon dispersion bands. Surprisingly, the semiconducting band gap nature of o-ZnSb changes from indirect and narrow to direct and sizable while going from 3D bulk to 2D ML structure. Further, we estimated the value of work functions for the surfaces of t-ZnSb and o-ZnSb as 4.61 eV and 4.04 eV respectively. Such materials can find the niche applications in next generation electronic devices utilizing 2D hetero-structures.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Gate modulation of the long-range magnetic order in a vanadium-doped WSe2 semiconductor

We demonstrate the gate-tunability of the long-range magnetic order in a p-type V-doped WSe2 monolayer using ab initio calculations. We found that at a low V-doping concentration limit, the long-range ferromagnetic order is enhanced by increasing the hole density. In contrast, the short-range antiferromagnetic order is manifested at a high electron density by full compensation of the p-type V doping concentration. The hole-mediated long-range magnetic exchange is ~70 meV, thus strongly suggesting the ferromagnetism in V-doped WSe2 at room temperature. Our findings on strong coupling between charge and spin order in V-doped WSe2 provide plenty of room for multifunctional gate-tunable spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Site occupancy and magnetic properties of Al-substituted M-type strontium hexaferrite

We use first-principles total-energy calculations based on density functional theory to study the site occupancy and magnetic properties of Al-substituted $M$-type strontium hexaferrite SrFe$_{12-x}$Al$_{x}$O$_{19}$ with $x=0.5$ and $x=1.0$. We find that the non-magnetic Al$^{3+}$ ions preferentially replace Fe$^{3+}$ ions at two of the majority spin sites, $2a$ and $12k$, eliminating their positive contribution to the total magnetization causing the saturation magnetization $M_s$ to be reduced as Al concentration $x$ is increased. Our formation probability analysis further provides the explanation for increased magnetic anisotropy field when the fraction of Al is increased. Although Al$^{3+}$ ions preferentially occupy the $2a$ sites at a low temperature, the occupation probability of the $12k$ site increases with the rise of the temperature. At a typical annealing temperature ($> 700\,^{\circ}{\rm C}$) Al$^{3+}$ ions are much more likely to occupy the $12k$ site than the $2a$ site. Although this causes the magnetocrystalline anisotropy $K_1$ to be reduced slightly, the reduction in $M_s$ is much more significant. Their combined effect causes the anisotropy field $H_a$ to increase as the fraction of Al is increased, consistent with recent experimental measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Structural, elastic and thermal properties of cementite (Fe$_3$C) calculated using Modified Embedded Atom Method

Structural, elastic and thermal properties of cementite (Fe$_3$C) were studied using a Modified Embedded Atom Method (MEAM) potential for iron-carbon (Fe-C) alloys. Previously developed Fe and C single element potentials were used to develop an Fe-C alloy MEAM potential, using a statistically-based optimization scheme to reproduce structural and elastic properties of cementite, the interstitial energies of C in bcc Fe as well as heat of formation of Fe-C alloys in L$_{12}$ and B$_1$ structures. The stability of cementite was investigated by molecular dynamics simulations at high temperatures. The nine single crystal elastic constants for cementite were obtained by computing total energies for strained cells. Polycrystalline elastic moduli for cementite were calculated from the single crystal elastic constants of cementite. The formation energies of (001), (010), and (100) surfaces of cementite were also calculated. The melting temperature and the variation of specific heat and volume with respect to temperature were investigated by performing a two-phase (solid/liquid) molecular dynamics simulation of cementite. The predictions of the potential are in good agreement with first-principles calculations and experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Theory of magnetic enhancement in strontium hexaferrite through Zn-Sn pair substitution

We study the site occupancy and magnetic properties of Zn-Sn substituted M-type Sr-hexaferrite SrFe$_{12-x}$(Zn$_{0.5}$Sn$_{0.5}$)$_x$O$_{19}$ with x = 1 using first-principles total-energy calculations. We find that in a ground-state configuration Zn-Sn ions preferentially occupy $4f_1$ and $4f_2$ sites unlike the model previously suggested by Ghasemi et al. [J. Appl. Phys, \textbf{107}, 09A734 (2010)], where Zn$^{2+}$ and Sn$^{4+}$ ions occupy the $2b$ and $4f_2$ sites. Density-functional theory calculations show that our model has a lower total energy by more than 0.2 eV per unit cell compared to Ghasemi's model. More importantly, the latter does not show an increase in saturation magnetization ($M_s$) compared to the pure $M$-type Sr-hexaferrite, in disagreement with the experiment. On the other hand, our model correctly predicts a rapid increase in $M_s$ as well as a decrease in magnetic anisotropy compared to the pure $M$-type Sr-hexaferrite, consistent with experimental measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

MEAM potentials for Al, Si, Mg, Cu, and Fe alloys

A set of Modified Embedded Atom Method (MEAM) potentials for the interactions between Al, Si, Mg, Cu, and Fe was developed from a combination of each element's MEAM potential in order to study metal alloying. Previously published MEAM parameters of single elements have been improved for better agreement to the generalized stacking fault energy (GSFE) curves when compared with ab-initio generated GSFE curves. The MEAM parameters for element pairs were constructed based on the structural and elastic properties of element pairs in the NaCl reference structure garnered from ab-initio calculations, with adjustment to reproduce the ab-initio heat of formation of the most stable binary compounds. The new MEAM potentials were validated by comparing the formation energies of defects, equilibrium volumes, elastic moduli, and heat of formation for several binary compounds with ab-initio simulations and experiments. Single elements in their ground state crystal structure were subjected to heating to test the potentials at elevated temperatures. An Al potential was modified to avoid formation of an unphysical solid structure at high temperatures. The thermal expansion coefficient of a compound with the composition of AA 6061 alloy was evaluated and compared with experimental values. MEAM potential tests performed in this work, utilizing the universal Atomistic Simulation Environment (ASE), are distributed to facilitate reproducibility of the results.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

The effects of Vanadium on the strength of a bcc Fe Σ3(111)[1-10] grain boundary

The effects of micro-alloying element, vanadium, on a bcc Fe Σ3(111)[1-10] symmetric tilt grain boundary strength are studied using density functional theory calculations. The lowest energy configuration of the grain boundary structure are obtained from the first-principles calculations. The substitutional and interstitial point defect formation energies of vanadium in the grain boundary are compared. The substitutional defect is prefered to interstitial one. The segregation energies of vanadium onto the grain boundary and its fractured surfaces are computed. The cohesive energy calculation of the grain boundary with and without vanadium show that vanadium strengthen the bcc iron Σ3(111)[1-10] grain boundary.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Modified embedded-atom method interatomic potentials for the Mg-Al alloy system

We developed new modified embedded-atom method (MEAM) interatomic potentials for the Mg-Al alloy system using a first-principles method based on density functional theory (DFT). The materials parameters, such as the cohesive energy, equilibrium atomic volume, and bulk modulus, were used to determine the MEAM parameters. Face-centered cubic, hexagonal close packed, and cubic rock salt structures were used as the reference structures for Al, Mg, and MgAl, respectively. The applicability of the new MEAM potentials to atomistic simulations for investigating Mg-Al alloys was demonstrated by performing simulations on Mg and Al atoms in a variety of geometries. The new MEAM potentials were used to calculate the adsorption energies of Al and Mg atoms on Al (111) and Mg (0001) surfaces. The formation energies and geometries of various point defects, such as vacancies, interstitial defects and substitutional defects, were also calculated. We found that the new MEAM potentials give a better overall agreement with DFT calculations and experiments when compared against the previously published MEAM potentials.

0 citations0 reviewsNo code linkedOpen access