BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Suman Datta

Suman Datta appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-sciEmerging Technologiescond-mat.dis-nnMachine Learningmath.DSNeural and Evolutionary Computingnlin.CDphysics.app-ph

Catalog footprint

What is connected

10works
9topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

10 published item(s)

preprint2022arXiv

2022 Roadmap on Neuromorphic Computing and Engineering

Modern computation based on the von Neumann architecture is today a mature cutting-edge science. In the Von Neumann architecture, processing and memory units are implemented as separate blocks interchanging data intensively and continuously. This data transfer is responsible for a large part of the power consumption. The next generation computer technology is expected to solve problems at the exascale with 1018 calculations each second. Even though these future computers will be incredibly powerful, if they are based on von Neumann type architectures, they will consume between 20 and 30 megawatts of power and will not have intrinsic physically built-in capabilities to learn or deal with complex data as our brain does. These needs can be addressed by neuromorphic computing systems which are inspired by the biological concepts of the human brain. This new generation of computers has the potential to be used for the storage and processing of large amounts of digital information with much lower power consumption than conventional processors. Among their potential future applications, an important niche is moving the control from data centers to edge devices. The aim of this Roadmap is to present a snapshot of the present state of neuromorphic technology and provide an opinion on the challenges and opportunities that the future holds in the major areas of neuromorphic technology, namely materials, devices, neuromorphic circuits, neuromorphic algorithms, applications, and ethics. The Roadmap is a collection of perspectives where leading researchers in the neuromorphic community provide their own view about the current state and the future challenges. We hope that this Roadmap will be a useful resource to readers outside this field, for those who are just entering the field, and for those who are well established in the neuromorphic community. https://doi.org/10.1088/2634-4386/ac4a83

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

An Ising Hamiltonian Solver using Stochastic Phase-Transition Nano- Oscillators

Computationally hard problems, including combinatorial optimization, can be mapped into the problem of finding the ground-state of an Ising Hamiltonian. Building physical systems with collective computational ability and distributed parallel processing capability can accelerate the ground-state search. Here, we present a continuous-time dynamical system (CTDS) approach where the ground-state solution appears as stable points or attractor states of the CTDS. We harness the emergent dynamics of a network of phase-transition nano-oscillators (PTNO) to build an Ising Hamiltonian solver. The hardware fabric comprises of electrically coupled injection-locked stochastic PTNOs with bi-stable phases emulating artificial Ising spins. We demonstrate the ability of the stochastic PTNO-CTDS to progressively find more optimal solution by increasing the strength of the injection-locking signal - akin to performing classical annealing. We demonstrate in silico that the PTNO-CTDS prototype solves a benchmark non-deterministic polynomial time (NP)-hard Max-Cut problem with high probability of success. Using experimentally calibrated numerical simulations and incorporating non-idealities, we investigate the performance of our Ising Hamiltonian solver on dense Max-Cut problems with increasing graph size. We report a high energy-efficiency of 1.3x10^7 solutions/sec/Watt for 100-node dense Max-cut problems which translates to a 5x improvement over the recently demonstrated memristor-based Hopfield network and several orders of magnitude improvement over other candidates such as CPU and GPU, quantum annealer and photonic Ising solver approaches. Such an energy efficient hardware exhibiting high solution-throughput/Watt can find applications in industrial planning and manufacturing, defense and cyber-security, bioinformatics and drug discovery.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Logic Compatible High-Performance Ferroelectric Transistor Memory

Silicon ferroelectric field-effect transistors (FeFETs) with low-k interfacial layer (IL) between ferroelectric gate stack and silicon channel suffers from high write voltage, limited write endurance and large read-after-write latency due to early IL breakdown and charge trapping and detrapping at the interface. We demonstrate low voltage, high speed memory operation with high write endurance using an IL-free back-end-of-line (BEOL) compatible FeFET. We fabricate IL-free FeFETs with 28nm channel length and 126nm width under a thermal budget <400C by integrating 5nm thick Hf0.5Zr0.5O2 gate stack with amorphous Indium Tungsten Oxide (IWO) semiconductor channel. We report 1.2V memory window and read current window of 10^5 for program and erase, write latency of 20ns with +/-2V write pulses, read-after-write latency <200ns, write endurance cycles exceeding 5x10^10 and 2-bit/cell programming capability. Array-level analysis establishes IL-free BEOL FeFET as a promising candidate for logic-compatible high-performance on-chip buffer memory and multi-bit weight cell for compute-in-memory accelerators.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Neural Sampling Machine with Stochastic Synapse allows Brain-like Learning and Inference

Many real-world mission-critical applications require continual online learning from noisy data and real-time decision making with a defined confidence level. Probabilistic models and stochastic neural networks can explicitly handle uncertainty in data and allow adaptive learning-on-the-fly, but their implementation in a low-power substrate remains a challenge. Here, we introduce a novel hardware fabric that implements a new class of stochastic NN called Neural-Sampling-Machine that exploits stochasticity in synaptic connections for approximate Bayesian inference. Harnessing the inherent non-linearities and stochasticity occurring at the atomic level in emerging materials and devices allows us to capture the synaptic stochasticity occurring at the molecular level in biological synapses. We experimentally demonstrate in-silico hybrid stochastic synapse by pairing a ferroelectric field-effect transistor -based analog weight cell with a two-terminal stochastic selector element. Such a stochastic synapse can be integrated within the well-established crossbar array architecture for compute-in-memory. We experimentally show that the inherent stochastic switching of the selector element between the insulator and metallic state introduces a multiplicative stochastic noise within the synapses of NSM that samples the conductance states of the FeFET, both during learning and inference. We perform network-level simulations to highlight the salient automatic weight normalization feature introduced by the stochastic synapses of the NSM that paves the way for continual online learning without any offline Batch Normalization. We also showcase the Bayesian inferencing capability introduced by the stochastic synapse during inference mode, thus accounting for uncertainty in data. We report 98.25%accuracy on standard image classification task as well as estimation of data uncertainty in rotated samples.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A Hybrid FeMFET-CMOS Analog Synapse Circuit for Neural Network Training and Inference

An analog synapse circuit based on ferroelectric-metal field-effect transistors is proposed, that offers 6-bit weight precision. The circuit is comprised of volatile least significant bits (LSBs) used solely during training, and non-volatile most significant bits (MSBs) used for both training and inference. The design works at a 1.8V logic-compatible voltage, provides 10^10 endurance cycles, and requires only 250ps update pulses. A variant of LeNet trained with the proposed synapse achieves 98.2% accuracy on MNIST, which is only 0.4% lower than an ideal implementation of the same network with the same bit precision. Furthermore, the proposed synapse offers improvements of up to 26% in area, 44.8% in leakage power, 16.7% in LSB update pulse duration, and two orders of magnitude in endurance cycles, when compared to state-of-the-art hybrid synaptic circuits. Our proposed synapse can be extended to an 8-bit design, enabling a VGG-like network to achieve 88.8% accuracy on CIFAR-10 (only 0.8% lower than an ideal implementation of the same network).

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Computing with Dynamical Systems Based on Insulator-Metal-Transition Oscillators

In this paper we review recent work on novel computing paradigms using coupled oscillatory dynamical systems. We explore systems of relaxation oscillators based on linear state transitioning devices, which switch between two discrete states with hysteresis. By harnessing the dynamics of complex, connected systems we embrace the philosophy of "let physics do the computing" and demonstrate how complex phase and frequency dynamics of such systems can be controlled, programmed and observed to solve computationally hard problems. Although our discussion in this paper is limited to Insulator-to-Metallic (IMT) state transition devices, the general philosophy of such computing paradigms can be translated to other mediums including optical systems. We present the necessary mathematical treatments necessary to understand the time evolution of these systems and demonstrate through recent experimental results the potential of such computational primitives.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Graphene stabilization of two-dimensional gallium nitride

The spectrum of two-dimensional (2D) materials beyond graphene offers a remarkable platform to study new phenomena in condensed matter physics. Among these materials, layered hexagonal boron nitride (hBN), with its wide bandgap energy (~5.0-6.0 eV), has clearly established that 2D nitrides are key to advancing novel devices1. A gap, however, remains between the theoretical prediction of 2D nitrides beyond hBN and experimental realization of such structures. Here we demonstrate the synthesis of 2D gallium nitride (GaN) via a novel migration-enhanced encapsulated growth (MEEG) technique utilizing epitaxial graphene. We theoretically predict and experimentally validate that the atomic structure of 2D GaN grown via MEEG is notably different from reported theory. Moreover, we establish that graphene plays a critical role in stabilizing the direct-bandgap (nearly 5.0 eV), 2D buckled structure. Our results provide a foundation for discovery and stabilization of novel 2D nitrides that are difficult to prepare via traditional synthesis.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Revisiting the theory of ferroelectric negative capacitance

In this paper we revisit the theory of negative capacitance, in a (i) standalone ferroelectric, (ii) ferroelectric-dielectric, and (iii) ferroelectric-semiconductor series combination, and show that it is important to minimize the total Gibbs free energy of the combined system (and not just the free energy of the ferroelectric) to obtain the correct states. The theory is explained both analytically and using numerical simulation, for ferroelectric materials with first order and second order phase transitions. The exact conditions for different regimes of operation in terms of hysteresis and gain are derived for ferroelectric-dielectric combination. Finally the ferroelectric-semiconductor series combination is analyzed to gain insights into the possibility of realization of steep slope transistors in a hysteresis free manner.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures

Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalocogenides: MoS2, MoSe2, and WSe2.The realization of MoS2-WSe2-Graphene and WSe2-MoSe2-Graphene heterostructures leads toresonant tunneling in an atomically thin stack with spectrally narrow room temperature negative differential resistance characteristics.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Synchronization of pairwise-coupled, identical, relaxation oscillators based on metal-insulator phase transition devices: A Model Study

Computing with networks of synchronous oscillators has attracted wide-spread attention as novel materials and device topologies have enabled realization of compact, scalable and low-power coupled oscillatory systems. Of particular interest are compact and low-power relaxation oscillators that have been recently demonstrated using MIT (metal- insulator-transition) devices using properties of correlated oxides. This paper presents an analysis of the dynamics and synchronization of a system of two such identical coupled relaxation oscillators implemented with MIT devices. We focus on two implementations of the oscillator: (a) a D-D configuration where complementary MIT devices (D) are connected in series to provide oscillations and (b) a D-R configuration where it is composed of a resistor (R) in series with a voltage-triggered state changing MIT device (D). The MIT device acts like a hysteresis resistor with different resistances in the two different states. The synchronization dynamics of such a system has been analyzed with purely charge based coupling using a resistive (Rc) and a capacitive (Cc) element in parallel. It is shown that in a D-D configuration symmetric, identical and capacitively coupled relaxation oscillator system synchronizes to an anti-phase locking state, whereas when coupled resistively the system locks in phase. Further, we demonstrate that for certain range of values of Rc and Cc, a bistable system is possible which can have potential applications in associative computing. In D-R configuration, we demonstrate the existence of rich dynamics including non-monotonic flows and complex phase relationship governed by the ratios of the coupling impedance. Finally, the developed theoretical formulations have been shown to explain experimentally measured waveforms of such pairwise coupled relaxation oscillators.

0 citations0 reviewsNo code linkedOpen access