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Sukanta Nandi

Sukanta Nandi contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Anomalous electrochemical capacitance in Mott insulator titanium sesquioxide

Electrochemical capacitors with pure electric double layer capacitance are so far largely been limited to carbon materials only. Conventional metal oxides with Faradaic pseudocapacitance substantially suffer from material instability at high temperatures and thus there is a demand for novel metal oxides exhibiting thermally improved high electric double layer capacitance with material stability. In this study, titanium sesquioxide, Ti$_2$O$_3$, a Mott insulator in its metallic state at 300$^o$ C showed an anomalous increase of $\approx$ 560% in the solid-state electrochemical capacitance as compared to its pristine response at room temperature (RT). In aqueous electrolyte, the maximum capacitance was obtained up to 1053 $μ$F/cm$^2$, which is 307% higher than with solid-state electrolyte. Moreover, the semiconducting state of Ti$_2$O$_3$ demonstrated $\approx$ 3500% enhancement in its electrochemical capacitance upon infrared illumination at RT. The observed electrochemical responses in Ti$_2$O$_3$ are attributed to the transition of semiconducting to the metallic state by redistribution of the localized electrons. Our experimental results find a good agreement with the first-principles density-functional theory calculations that revealed an increase in the charge density with the rise in temperature, which is mainly attributed to the surface Ti atoms. The study open has wide avenues to engineer the electrochemical double layer capacitance of theory calculations that revealed an increase in the charge density with the rise in temperature, which is mainly attributed to the surface Ti atoms. The study opens wide avenues to engineer the electrochemical double layer capacitance of Ti$_2$O$_3$ with high chemical stability.

preprint2022arXiv

Deep-subwavelength resonant metaphotonics enabled by high-index topological insulator bismuth telluride

In nanophotonics, small mode volumes, high-quality factor (Q) resonances, and large field enhancements without metals, fundamentally scale with the refractive index and are key for many implementations involving light-matter interactions. Topological insulators (TI) are a class of insulating materials that host topologically protected surface states, some of which exhibit extraordinary high permittivity values. Here, we study the optical properties of TI bismuth telluride (Bi2Te3) single crystals. We find that both the bulk and surface states contribute to the extremely large optical constants, with the real part of the refractive index peaking at n~11. Utilizing these ultra-high index values, we demonstrate that Bi2Te3 metasurfaces are capable of squeezing light in deep subwavelength structures, with the fundamental magnetic dipole (MD) resonance confined in unit cell size smaller than λ/10. We further show that dense ultrathin metasurface arrays can simultaneously provide large magnetic and electric field enhancements arising from the surface metallic states and the high index of the bulk. These findings demonstrate the potential of chalcogenide TI materials as a platform leveraging the unique combination of ultra-high-index dielectric response with surface metallic states for metamaterial design and nanophotonic applications in sensing, non-linear generation, and quantum information.