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Alok Shukla

Alok Shukla contributes to research discovery and scholarly infrastructure.

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Published work

21 published item(s)

preprint2023arXiv

Benchmarking Gaussian Basis Sets in Quantum-Chemical Calculations of Photoabsorption Spectra of Light Atomic Clusters

The choice of Gaussian basis functions for computing the ground-state properties of molecules, and clusters, employing wave-function-based electron-correlated approaches, is a well-studied subject. However, the same cannot be said when it comes to the excited-state properties of such systems, in general, and optical properties, in particular. The aim of the present study is to understand how the choice of basis functions affects the calculations of linear optical absorption in clusters, qualitatively, and quantitatively. For this purpose, we have calculated linear optical absorption spectra of several small charged and neutral clusters, namely, Li$_{2}$, Li$_{3}$, Li$_{4}$, B$_{2}^{+}$, B$_{3}^{+}$, Be$_{2}^{+}$, and Be$_{3}^{+}$, using a variety of Gaussian basis sets. The calculations were performed within the frozen-core approximation, and a rigorous account of electron correlation effects in the valence sector was taken by employing various levels of configuration interaction (CI) approach both for the ground and excited states. Our results on the peak locations in the absorption spectra of Li$_{3}$ and Li$_{4}$ are in very good agreement with the experiments. Our general recommendation is that for excited-state calculations, it is very important to utilize those basis sets which contain augmented functions. Relatively smaller aug-cc-pVDZ basis sets also yield high-quality results for photoabsorption spectra, and are recommended for such calculations if the computational resources are limited.

preprint2023arXiv

Highly Sensitive and Self Powered Ultraviolet Photo Detector based on ZnO Nanorods Coated with TiO$_2$

Nanorods (NRs) of crystalline ZnO coated with thin layers of TiO$_2$(ZnO@TiO$_2$) were fabricated with the help of the spin coating technique followed by the hydrothermal method. Scanning electron microscopy (SEM) and X-ray diffraction analysis confirms the morphology and structural stability of as-prepared NRs. The optical band gaps of the NRs were estimated, and a clear blue shift toward the UV region has been detected. When UV light falls on as-prepared device (i.e., in the "ON" state), a significant increase in photocurrent (I$_{UV}$) at zero voltage supply was observed from 6 $μ$A to 17 $μ$A while in the "OFF" state, the dark current (I$_{dark}$), increases from 0.08 $μ$A to 0.6 $μ$A with ZnO@TiO$_2$ NRs as compared to bare ZnO NRs respectively. Responsivity and detectivity of TiO$_2$ coated ZnO NRs based device found maximum in UV region unlike bare ZnO NRs. Enhanced photocurrent achieved by the growth of TiO$_2$ layers on ZnO NRs is 250 $μ$A as compared to bare ZnO NRs for which it is 35 $μ$A at 10 V voltage supply under the ultraviolet irradiation (illumination intensity of 1 mW/cm$^2$). Furthermore, theoretical calculations have been performed using the first-principles density-functional theory to understand the effects of heterostructure NRs on the electronic and optical properties of TiO$_2$ coated ZnO.

preprint2022arXiv

An Ab-initio study of the Y decorated 2D holey graphyne for hydrogen storage application

Expanding pollution and rapid consumption of natural reservoirs (gas, oil, and coal) led humankind to explore alternative energy fuels like hydrogen fuel. Solid-state hydrogen storage is most desirable because of its usefulness in the onboard vehicle. In this work, we explored the yttrium decorated ultra porous, two-dimensional holey-graphyne for hydrogen storage. Using the first principles DFT simulations, we predict that yttrium doped holey graphyne can adsorb up to seven hydrogen molecules per yttrium atom resulting in a gravimetric hydrogen weight percentage of 9.34, higher than the target of 6.5 wt% set by the US Department of Energy (DoE). The average binding energy per H$_2$ and desorption temperature come out to be -0.34 eV and ~ 438 K, respectively. Yttrium atom is bonded strongly on HGY sheet due to charge transfer from Y 4d orbital to C 2p orbital whereas the adsorption of H$_2$ molecule on Y is due to Kubas-type interactions involving charge donation from H 1s orbital to Y 3d orbital and back donation with net charge gain by H 1s orbital. Furthermore, sufficient energy barriers for metal atom diffusion have been found to prevent the clustering of transition metal (yttrium) on the HGY sheet. The stability of the system at higher temperatures is analyzed using Ab-initio molecular dynamics (AIMD) method and the system is found to be stable at room and the highest desorption temperature. Stability of the system at higher temperatures, presence of adequate diffusion energy barrier to prevent metal-metal clustering, high gravimetric wt% of H$_2$ uptake with suitable binding energy, and desorption temperature signifies that Y-doped HGY is a promising material to fabricate high capacity hydrogen storage devices.

preprint2022arXiv

Anomalous electrochemical capacitance in Mott insulator titanium sesquioxide

Electrochemical capacitors with pure electric double layer capacitance are so far largely been limited to carbon materials only. Conventional metal oxides with Faradaic pseudocapacitance substantially suffer from material instability at high temperatures and thus there is a demand for novel metal oxides exhibiting thermally improved high electric double layer capacitance with material stability. In this study, titanium sesquioxide, Ti$_2$O$_3$, a Mott insulator in its metallic state at 300$^o$ C showed an anomalous increase of $\approx$ 560% in the solid-state electrochemical capacitance as compared to its pristine response at room temperature (RT). In aqueous electrolyte, the maximum capacitance was obtained up to 1053 $μ$F/cm$^2$, which is 307% higher than with solid-state electrolyte. Moreover, the semiconducting state of Ti$_2$O$_3$ demonstrated $\approx$ 3500% enhancement in its electrochemical capacitance upon infrared illumination at RT. The observed electrochemical responses in Ti$_2$O$_3$ are attributed to the transition of semiconducting to the metallic state by redistribution of the localized electrons. Our experimental results find a good agreement with the first-principles density-functional theory calculations that revealed an increase in the charge density with the rise in temperature, which is mainly attributed to the surface Ti atoms. The study open has wide avenues to engineer the electrochemical double layer capacitance of theory calculations that revealed an increase in the charge density with the rise in temperature, which is mainly attributed to the surface Ti atoms. The study opens wide avenues to engineer the electrochemical double layer capacitance of Ti$_2$O$_3$ with high chemical stability.

preprint2022arXiv

Density Functional Theory Study of the Hydrogen Evolution Reaction in Haeckelite Boron Nitride Quantum Dots

To satisfy rising energy needs and to handle the forthcoming worldwide climate transformation, major research attention has been drawn to environmentally friendly, renewable, and abundant energy resources. Hydrogen plays an ideal and significant role is such resources, due to its non-carbon-based energy and production through clean energy. In this work, we have explored the catalytic activity of a newly predicted haeckelite boron nitride quantum dot (haeck-BNQD), constructed from the infinite BN sheet, for its utilization in hydrogen production. Density functional theory calculations are employed to investigate geometry optimization, electronic and adsorption mechanism of haeck-BNQD using Gaussian16 package, employing the hybrid B3LYP and wB97XD functionals, along with 6- 31G(d,p) basis set. A number of physical quantities such as HOMO/LUMO energies, the density of states, hydrogen atom adsorption energies, Mulliken populations, Gibbs free energy, work functions, overpotentials, etc., have been computed and analyzed in the context of the catalytic performance of haeck-BNQD for the hydrogen-evolution reaction (HER). Based on our calculations, we predict that the best catalytic performance will be obtained for H adsorption on top of the squares or the octagons of haeck-BNQD. We hope that our prediction of the most active catalytic sites on haeck-BNQD for HER will be put to test in future experiments.

preprint2022arXiv

Exploring yttrium doped C$_{24}$ fullerene as a high-capacity reversible hydrogen storage material: DFT investigations

By employing the state-of-the-art density functional theory, we report the hydrogen storage capability of yttrium decorated C$_{24}$ fullerene. Single Y atom attached on C$_{24}$ fullerene can reversibly adsorb a maximum number of 6 H$_2$ molecules with average adsorption energy -0.37 eV and average desorption temperature 477 K, suitable for fuel cell applications. The gravimetric weight content of hydrogen is 8.84 %, which exceeds the target value of 6.5 wt % H by the department of energy (DoE) of the United States. Y atom is strongly bonded to C$_{24}$ fullerene with a binding energy of -3.4 eV due to a charge transfer from Y-4d and Y-5s orbitals to the C-2p orbitals of C$_{24}$ fullerene. The interaction of H$_2$ molecules with the Y atom is due to the Kubas type interaction involving a charge donation from the metal d orbital to H 1s orbital, and back donation causing slight elongation of H-H bond length. The stability of the system at the highest desorption temperature is confirmed by ab-initio molecular dynamics simulations, and the metal-metal clustering formation has been investigated by computing the diffusion energy barrier for the movement of Y atoms. We have corrected all the calculated energies for the van der Waals (vdW) interactions by applying the dispersion energy corrections, in addition to the contribution of the GGA exchange-correlation functional. The C$_{24}$+Y system is stable at room temperature, and at the highest desorption temperature, the presence of a sufficient diffusion energy barrier prevents metal-metal clustering. Furthermore, binding energies of H$_2$ are within the target value by DoE (-0.2-0.7 eV/H$_2$ ), while H$_2$ uptake (8.84 % H) is higher than DoE's criteria. Therefore, we propose that Y decorated C$_{24}$ fullerene can be tailored as a practically viable potential hydrogen storage candidate.

preprint2022arXiv

First-principles predictions of tunable half metallicity in zigzag GaN nanoribbons with possible applications in CO detection and spintronics

Based on systematic first-principles density-functional theory (DFT) simulations, we predict that the zigzag GaN nanoribbons (ZGaNNR) can be used both as highly efficient CO detectors as well as spin filters. Our calculations performed both on infinitely long nanoribbons, and also on finite strands, suggest that: (a) CO binds strongly at the edges of ZGaNNRs, and (b) that several of the resultant configurations exhibit half-metallic behavior. We considered various edge-passivation sites and found that all the resultant structures are thermodynamically stable. The metallic, half-metallic, and semiconducting configurations are observed as a function of CO passivation coverage. We also compute the current-voltage (I-V) characteristics of various structures using the Landauer formalism and find that the devices made up of half-metallic configurations act as highly-efficient spin filters. The effect of CO concentration is also investigated which suggests a viable way to not just tune the electronic band gap of ZGaNNRs, but also their half metallicity. Our simulations thus suggest a new direction of research for possible device applications of III-V heterostructures.

preprint2022arXiv

Graphene Quantum Dot with Divacancy and Topological Defects: A Novel Material for Promoting Prompt and Delayed Fluorescence of Tunable Wavelengths

This work demonstrates the unique approach of introducing divacancy imperfections in topological Stone-Wales type defected graphene quantum dots for harvesting both singlet and triplet excitons, essential for fabricating fluorescent organic light-emitting diodes. Here, we first reveal that structural relaxation of these systems establishes the high-spin triplet state as the stable ground state at room temperature, thereby significantly increasing their potential in designing spintronic devices. Our extensive electron-correlated computations then demonstrate that the energetic ordering of the singlet and triplet states in these relaxed structures can trigger both prompt and delayed fluorescence of different wavelengths through various decay channels. Particularly, the position of divacancy determines the tunability range of the emission wavelengths. In addition, our results obtained from both multi-reference singles-doubles configurationinteraction (MRSDCI) and first-principles time-dependent density functional theory (TDDFT) methodologies highlight that the synergetic effects of divacancy-position,structural relaxation and spin multiplicity critically govern the nature and magnitude of shift exhibited by the most intense peak of the absorption profile, crucial for designing optoelectronic devices.

preprint2022arXiv

High-capacity reversible hydrogen storage in scandium decorated holey graphyne: Theoretical perspectives

We have investigated the hydrogen storage capabilities of scandium decorated holey graphyne, a recently synthesized carbon allotrope, by applying density functional theory and molecular dynamics simulations. We have observed that one unit cell of holey graphyne can adsorb 6 Sc atoms, and each Sc atom can adsorb up to 5 H$_2$ molecules with an average binding energy and average desorption temperature of -0.36 eV/H$_2$ and 464 K, respectively. The gravimetric weight percentage of hydrogen is 9.80 %, which is considerably higher than the Department of Energy, United-States requirements of 6.5 %. We have found that a total amount of 1.9e charge transfers from the 3d and 4s orbitals of Sc atom to the C-2p orbitals of holey graphyne by performing the Bader charge analysis. Hydrogen molecules are bonded with the scandium atom by Kubas interactions. The ab-initio molecular dynamics simulations confirm the structural integrity of scandium decorated holey graphyne system at the high desorption temperatures. The presence of sufficient diffusion energy barriers for the Sc atom ensure the avoidance of metal-metal clustering in the system.

preprint2022arXiv

On teaching mathematics to gifted students: some enrichment ideas and educational activities

Many mathematicians find mathematics aesthetically beautiful and even comparable to art forms such as music or painting. On the other hand, every year a great number of school students leave mathematics with total disillusionment and bitterness, without ever witnessing any beauty in it. In this work, we give some strategies to teach mathematics, especially to gifted students and to instill a love of mathematics in them. We will describe an integrated approach to teaching mathematics where students are introduced to more advanced, more elegant and more beautiful aspects of the subject early. The proposed integrated approach takes advantage of the fascinating interconnections between various subfields of mathematics, and even borrows from advanced topics such as number theory and topology. Combining the teaching of computer programming with the teaching of mathematics is another key focus of this work. This opens up the door to explore, not only the beautiful topics such as fractals, computer math art and computer graphics in general, but also real-life applications resulting from computer simulations in engineering and physics and other natural sciences. We will also discuss the use of storytelling, explorations and experimenting, puzzles and creative problem solving etc., to make learning interesting for students. It is important to show students that the `true' essence of mathematics goes beyond the dry procedural drill of learning arithmetic. Students must be provided with the opportunities to experience the `aha moment' resulting from the joy of solving a difficult problem, or from the understanding of a deep concept with complete clarity. We will discuss several strategies, and provide many examples to illustrate how this could be achieved, taking into account the emotional and psychological aspects of mathematical cognition and learning.

preprint2022arXiv

Tiling proofs of Jacobi triple product and Rogers-Ramanujan identities

We use the method of tiling to give elementary combinatorial proofs of some celebrated $q$-series identities, such as Jacobi triple product identity, Rogers-Ramanujan identities, and some identities of Rogers. We give a tiling proof of the q-binomial theorem and a tiling interpretation of the q-binomial coefficients. A new generalized $ k $-product $q$-series identity is also obtained by employing the `tiling-method', wherein the generating function of the set of all possible tilings of a rectangular board is computed in two different ways to obtain the desired $q$-series identity. Several new recursive $ q$-series identities were also established. The `tiling-method' holds promise for giving an aesthetically pleasing approach to prove old and new $q$-series identities.

preprint2022arXiv

Ultrahigh reversible hydrogen storage in K and Ca decorated 4-6-8 biphenylene sheet

By applying density functional theory (DFT) and ab-initio molecular dynamics (AIMD) simulations, we predict the ultrahigh hydrogen storage capacity of K and Ca decorated single-layer biphenylene sheet (BPS). We have kept various alkali and alkali earth metals, including Na, Be, Mg, K, Ca, at different sites of BPS and found that K and Ca atoms prefer to bind individually on the BPS instead of forming clusters. It was found that 2x2x1 supercell of biphenylene sheet can adsorb eight K, or eight Ca atoms, and each K or Ca atom can adsorb 5 H$_2$, leading to 11.90 % or 11.63 % of hydrogen uptake, respectively, which is significantly higher than the DOE-US demands of 6.5 %. The average adsorption energy of H$_2$ for K and Ca decorated BPS is -0.24 eV and -0.33 eV, respectively, in the suitable range for reversible H$_2$ storage. Hydrogen molecules get polarized in the vicinity of ionized metal atoms hence get attached to the metal atoms through electrostatic and van der Waals interactions. We have estimated the desorption temperatures of H$_2$ and found that the adsorbed H$_2$ can be utilized for reversible use. We have found that a sufficient energy barrier of 2.52 eV exists for the movement of Ca atoms, calculated using the climbing-image nudged elastic band (CI-NEB) method. This energy barrier can prevent the clustering issue of Ca atoms. The solidity of K and Ca decorated BPS structures were investigated using AIMD simulations.

preprint2021arXiv

Elucidating the Influence of Native Defects on Electrical and Optical Properties in Semiconducting Oxides: An Experimental and Theoretical Investigation

Defect engineering using self-doping or creating vacancies in polycrystalline oxide based materials has profound influence on optical absorption, UV photo detection, and electrical switching. However, defects induced semiconducting oxide devices show enhancement in photo detection and photosensitivity, and hence still remain interesting in the field of optoelectronics. In this study, defect engineering in semiconducting oxide materials is discussed along with their roles in optoelectronic device-based applications. Theoretical investigations have been done for identifying defect states by performing first-principles electronic structure calculations, employing the density-functional theory. Particularly, in this work, we have focused on probing the defect-induced changes in optical and electrical processes by means of experimental as well as computational investigations. Hence, systematic experimental measurements of optical absorption, electrical switching, charge density, and photocurrent in defect-rich semiconducting oxide samples have been performed. Our results suggest that defects can lead to enhancement of optoelectronic properties such as photocurrent, switching speed, optical absorption, etc. for semiconducting oxide based devices.

preprint2021arXiv

Non-volatile reconfigurable spin logic device: parallel operations

A new proposal is given for designing a non-volatile, completely spin logic device, that can be reprogrammed for different functional classical logical operations. We use the concept of bias driven spin dependent circular current and current induced magnetic field in a quantum ring under asymmetric ring-to-electrode interface configuration to implement all the Boolean operations. We extend our idea to build two kinds of parallel computing architectures for getting parallelized operations, all at a particular time. For one case, different kinds of parallel operations are performed in a single device, whereas in the other type all the possible inputs of a logic gate are processed in parallel and all the outputs are read simultaneously. The performance and reliability are investigated in terms of power, delay and power-delay-product and finally the system temperature. We find that both the individual and simultaneous logic operations studied here are much superior compared to the operations performed in different conventional logic families like complementary metal oxide semiconductor logic, transistor-transistor logic, etc. The key advantage is that we can perform several logic operations, as many as we wish, repeating the same or different logic gates using a single setup, which indeed reduces wiring in the circuits and hence consumes much less power. Our analysis can be utilized to design optimized logic circuits at nano-scale level.

preprint2021arXiv

Role of Defect Induced Interfacial States in Molecular Sensing: Ultrahigh- Sensitive Region for Molecular Interaction

The defect induced interfacial states are created in an atomically thin two-dimensional molybdenum disulfide channel by underlying a narrow pattern of a graphene layer in a field effect transistor. Nondestructive method for the generation of charge-state allowed a highly sensitive molecular interaction with the sensitivity of nearly three-order of magnitude at room temperature. The presence of interfacial states in the channel lead to a conductance fluctuation and its magnitude is modulated using the nitrogen dioxide gas molecules in the subthreshold region. The study provides a systematic approach to establish a correlation between modulated conductance fluctuation and the molecular concentration upto parts-per-billion. First-principles density functional theory further explains the role of unique interfacial configuration on conductance fluctuation. Therefore, our study demonstrates an experimental approach to induce charge-state for the modulation of carrier concentration and exploits the role of defect induced interfacial states in atomically thin interfaces for the molecular interaction.

preprint2021arXiv

Why does B$_{12}$H$_{12}$-icosahedron need two electrons to be stable: A first-principles electron-correlated investigation of B$_{12}$H$_{n}$ ($n=$6,12) clusters

In this work, we present large-scale electron-correlated computations on various conformers of B$_{12}$H$_{12}$ and B$_{12}$H$_{6}$ clusters, to understand the reasons behind the high stability of di-anion icosahedron ($I_{h}$) and cage-like B$_{12}$H$_{6}$ geometries. Although the B$_{12}$-icosahedron is the basic building block in some structures of bulk boron, it is unstable in its free form. Furthermore, its H-passivated entity, i.e., B$_{12}$H$_{12}$ icosahedron is also unstable in free form. However, dianion B$_{12}$H$_{12}$ has been predicted to be stable as a perfect icosahedron in the free-standing form. In order to capture the correct picture for the stability of B$_{12}$H$_{12}^{-2}$ and B$_{12}$H$_{6}$ clusters, we optimized these structures by employing the coupled-cluster singles-doubles (CCSD) approach and cc-pVDZ basis set. We also performed vibrational frequency analysis of the isomers of these clusters, using the same level of theory to ensure the stability of the structures. For all the stable geometries obtained from the vibrational frequency analysis, we additionally computed their optical absorption spectra using the time-dependent density functional theory (TDDFT) approach, at the the B3LYP/6-31G{*} level of theory. Our calculated absorption spectra could be probed in future experiments on these clusters.

preprint2020arXiv

Influence of Edge Functionalization on Electronic and Optical Properties of Armchair Phosphorene Nanoribbons: a First-Principles Study

In this work, we present a systematic first-principles density-functional theory based study of geometry, electronic structure, and optical properties of armchair phosphorene nanoribbons (APNRs), with the aim of understanding the influence of edge passivation. Ribbons of width ranging from 0.33 nm to 3.8 nm were considered, with their edges functionalized with the groups H, OH, F, Cl, S, and Se. The geometries of various APNRs were optimized, and the stability was checked by calculating their formation energies. Using the relaxed geometries, calculations of their band structure and optical properties were performed. Pristine APNRs, as expected, exhibit significant edge reconstruction, rendering them indirect band gap semiconductors, except for one width {\normalsize{}($N=5$, where $N$ is the width parameter)} for which a direct band gap is observed. The edge passivated APNRs are found to be direct band gap semiconductors, with the band gap at the $Γ$-point, for all the functional groups considered in this work. To obtain accurate estimates of band gaps, calculations were also performed using HSE06 hybrid functional for several APNRs. Our calculations reveal that functional groups have significant influence on the band gaps and optical properties of narrower APNRs. For wider passivated ribbons, with the increasing ribbon widths, the gaps converge to almost the same value, irrespective of the group. We also performed calculations including the spin-orbit coupling (SOC) for hydrogen passivated APNRs with $N=5$ and 11. We found that SOC has no significant influence on the band structure of the studied APNRs. However, for the broader APNR, a lowering of peak intensities was observed in the optical absorption spectrum beyond 5 eV.

preprint2020arXiv

Pariser-Parr-Pople Model based Configuration-Interaction Study of Linear Optical Absorption in Lower-Symmetry Polycyclic Aromatic Hydrocarbon Molecules

The electronic and optical properties of various polycyclic aromatic hydrocarbons (PAHs) with lower symmetry, namely, benzo[ghi]perylene (C$_{22}$H$_{12}$), benzo[a]coronene (C$_{28}$H$_{14}$), naphtho[2,3a]coronene (C$_{32}$H$_{16}$), anthra[2,3a]coronene (C$_{36}$H$_{18}$), and naphtho[8,1,2-abc]coronene (C$_{30}$H$_{14}$) were investigated. For the purpose, we performed electron-correlated calculations using screened, and standard parameters in the $π$-electron Pariser-Parr-Pople (PPP) Hamiltonian, and the correlation effects were included, both for ground and excited states, using the multi-reference singles-doubles configuration-interaction (MRSDCI) methodology. PPP model Hamiltonian includes long-range Coulomb interactions, which increase the accuracy of our calculations. The results of our calculations predict that, with the increasing sizes of the coronene derivatives, optical spectra are red shifted, and the optical gaps decrease. In each spectrum, the first peak representing the optical gap is of moderate intensity, while the more intense peaks appear at higher energies. Our computed spectra are in good agreement with the available experimental data. For the purpose of comparison, we also performed first-principles time-dependent density-functional theory (TDDFT) calculations of the optical gaps of these molecules using Gaussian basis functions, and found that they yielded values lower than our CI results.

preprint2020arXiv

Signatures of non-trivial band topology in LaAs/LaBi heterostructure

In this article, we investigate non-trivial topological features in a heterostructure of extreme magnetoresistance (XMR) materials LaAs and LaBi using density functional theory (DFT). The proposed heterostructure is found to be dynamically stable and shows bulk band inversion with non-trivial Z_{2} topological invariant and a Dirac cone at the surface. In addition, its electron and hole carrier densities ratio is also calculated to investigate the possibility to possess XMR effect. Electrons and holes in the heterostructure are found to be nearly compensated, thereby facilitating it to be a suitable candidate for XMR studies.

preprint2020arXiv

Studies of non-trivial band topology and electron-hole compensation in YSb

In this article, we study non-trivial topological phase and electron-hole compensation in extremely large magnetoresistance (XMR) material YSb under hydrostatic pressure using first-principles calculations. YSb is topologically trivial at ambient pressure, but undergoes a reentrant topological phase transition under hydrostatic pressure. The reentrant behavior of topological quantum phase is then studied as a function of charge density ratio under pressure. From the detailed investigation of Fermi surfaces, it is found that electron to hole densities ratio increases with pressure, however a non-trivial topological phase appears without perfect electron-hole compensation. The results indicate that the non-trivial topological phase under hydrostatic pressure may not have maximal influence on the magnetoresistance, and need further investigations through experiments to determine the exact relationship between topology and XMR effect.

preprint2020arXiv

Tunability of electrical and thermoelectrical properties of monolayer MoS$_2$ through oxygen passivation

Electric and thermoelectric properties of strictly monolayer MoS$_2$ films, which are grown using a novel micro-cavity based CVD growth technique, have been studied under diverse environmental and annealing conditions. Resistance of a thermoelectric device that is fabricated on a continuous monolayer MoS$_2$ layer using photolithography technique has been found to reduce by about six orders of magnitudes upon annealing in vacuum at 525 K. Seebeck coefficient of the layer also reduces by almost an order of magnitude upon annealing. When the sample is exposed to oxygen atmosphere, these parameters return to their previous values. In fact, it has been found that the electron concentration, mobility as well as the thermoelectric power of the material can be tuned by controlling the temperature of annealing and oxygen exposure. Once established, these values are maintained as long as the layer is not exposed to oxygen environment. This can offer a unique way to control doping in the material provided an effective encapsulation method is devised. Such control is an important step forward for device application. The effect has been attributed to the passivation of di-sulfur vacancy donors present in the MoS$_2$ film by physisorbed oxygen molecules. Band structural calculations using density functional theory have been carried out, results of which indeed validate this picture.