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Researcher profile

Sudeshna Samanta

Sudeshna Samanta contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.str-el

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Published work

2 published item(s)

preprint2013arXiv

Growth and physical property study of single nanowire (diameter ~ 45nm) of half doped Manganite

We report here the growth and characterization of functional oxide nanowire of hole doped manganite of La0.5Sr0.5MnO3 (LSMO). We also report four probe electrical resistance measurement of single nanowire of LSMO (diameter ~ 45nm) using FIB fabricated electrodes. The wires were fabricated by hydrothermal method using autoclave at a temperature of 270 oC. The elemental analysis and physical property like electrical resistivity were studied at individual nanowire level. The quantitative determination of Mn valency and elemental mapping of constituent elements was done by using Electron Energy Loss Spectroscopy (EELS) in the Scanning Transmission Electron Microscopy (STEM) mode. We addressed the important issue of whether as a result of size reduction the nanowires can retain the desired composition, structure and physical properties. The nanowires used were found to have a ferromagnetic transition (TC) at around 325 K which is very close to the bulk value of around 330 K found in single crystal of the same composition confirming that the functional behavior is likely to be retained even after size reduction of the nanowires to a diameter of 45 nm. The electrical resistivity shows insulating behavior within the temperature range measured, which is very much similar to the bulk system.

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preprint2012arXiv

Electrical and magnetic transport study on strain driven ferromagnetic insulating thin film of low doped manganite

In this paper we have created a strain driven single crystal like ferromagnetic insulating (FMI) state in a PLD grown thin film of low doped LCMO(X = 0.15)on NGO(100) substrate and make a thorough study of strain effects on the electric and magnetic transport of this film. We have studied and compared the FMI state, ferromagnetic transition temperature (TC), ferromagnetic insulating temperature (TFMI) and the resistivity of the film in details with bulk single crystals of X=0.18 to 0.22 doping region. We have found that TFMI and the localisation length of the carriers are increased and there is also a decrease in the Coulomb gap. The magneto transport behavior of the film also differs from the bulk single crystals and the magnetoresistance of the sample is nearly 20 to 75% with the application of the applied field(0 to 10 T) and it falls up to 5 to 40% below a certain temperature and the TC of the film increases to higher temperature with the increasing field. The film also shows anisotropic magnetoresistance as large as 20% depending on applied magnetic field direction.

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