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A. K. Raychaudhuri

A. K. Raychaudhuri appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.str-elphysics.app-phcond-mat.mes-hallphysics.ins-detphysics.optics

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Published work

18 published item(s)

preprint2020arXiv

Broad Band Single Germanium Nanowire Photodetectors with Surface Oxide Controlled High Optical Gain

We have investigated photoconductive properties of single Germanium Nanowires(NWs)of diameter less than 100 nm in the spectral range of 300 to 1100 nm showing ultra large peak Responsivity in excess of 10^{7}AW^{-1}.The NWs were grown by Vapor Liquid Solid method using Au nanoparticle as catalyst. In this report we discuss the likely origin of the ultra large responsivity that may arise from a combination of various physical effects which are a): Ge and GeO_{x} interface states which act as scavengers of electrons from the photo-generated pairs,leaving the holes free to reach the electrodes,b) Schottky barrier at the metal and NW interface which gets lowered substantially due to carrier diffusion in contact region and (c) photodetector length being small (approximately few μm), negligible loss of photogenerated carriers due to recombination at defect sites. We have observed from power dependence of the optical gain that the gain is controlled by trap states. We find that the surface of the nanowire has presence of a thin layer of GeO_{x} (as evidenced from HRTEM study) which provide interface states. It is observed that these state play a crucial role to provide a radial field for separation of photogenerated electron and hole pair which in turn leads to very high effective photoconductive gain that reaches a very high at low illumination density.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Continuous transition from weakly localized regime to strong localization regime in Nd_{0.7}La_{0.3}NiO_{3} films

We report an investigation of Metal Insulator Transition (MIT) using conductivity and magnetoconductance (MC) measurements down to 0.3 K in Nd_{0.7}La_{0.3}NiO_{3} films grown on crystalline substrates of LaAlO_{3} (LAO), SrTiO_{3} (STO), and NdGaO_{3}(NGO) by pulsed laser deposition. The film grown on LAO experiences a compressive strain and shows metallic behavior with the onset of a weak resistivity upturn below 2 K which is linked to the onset of weak localization contribution. Films grown on STO and NGO show a crossover from a Positive Temperature Coefficient (PTC) resistance regime to Negative Temperature Coefficient (NTC) resistance regime at definite temperatures. We establish that a cross-over from PTC to NTC on cooling does not necessarily constitute a MIT because the extrapolated conductivity at zero temperature σ_{0} though small (<10 S/cm) is finite, signalling the existence of a bad metallic state and absence of an activated transport. The value of σ_{0} for films grown on NGO is reduced by a factor of 40 compared to that for films grown on STO. We show that a combination of certain physical factors makes substituted nickelate (that are known to exhibit first order Mott type transition), undergo a continuous transition as seen in systems undergoing disorder/composition driven Anderson transition. The MC measurement also support the above observation and show that at low temperature there exists a positive MC that arises from the quantum interference which co-exists with a spin-related negative MC that becomes progressively stronger as the electrons approach a strongly localized state in the film grown on NGO.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Enhanced broad band photoresponse of a partially suspended horizontal array of Silicon microlines fabricated on Silicon-On-Insulator wafers

We report a high Responsivity broad band photo-detector working in the wavelength range 400 nm to 1100 nm in a horizontal array of Si microlines (line width ~1 micron) fabricated on a Silicon-on-Insulator (SOI) wafer. The array was made using a combination of plasma etching, wet etching and electron beam lithography. It forms a partially suspended (nearly free) Silicon microstructure on SOI. The array detector under full illumination of the device shows a peak Responsivity of 18 A/W at 800 nm, at a bias of 1V which is more than an order of magnitude of the Responsivity in a commercial Si detector. In a broad band of 400 nm to 1000 nm the Responsivity of the detector is in excess of 10A/W. We found that the suspension of the microlines in the array is necessary to obtain such high Responsivity. The suspension isolates the microlines from the bulk of the wafer and inhibits carrier recombination by the underlying oxide layer leading to enhanced photo-response. This has been validated through simulation. By using focused illumination of selected parts of a single microline of the array, we could isolate the contributions of the different parts of the microline to the photo-current.

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preprint2020arXiv

Fabrication of Germanium-on-insulator in a Ge wafer with a crystalline Ge top layer and buried GeO2 layer by Oxygen ion implantation

The paper reports fabrication of Germanium-on-Insulator (GeOI) wafer by Oxygen ion implantation of an undoped single crystalline Ge wafer of orientation (100). Oxygen ions of energy 200 keV were implanted. The implanted wafer was subjected to Rapid Thermal Annealing to 650 C. The resulting wafer has a top crystalline Ge layer of 220 nm thickness and Buried Oxide layer (BOX) layer of good quality crystalline Germanium oxide with thickness around 0.62 micron. The crystalline BOX layer has hexagonal crystal structure with lattice constants close to the standard values. Raman Spectroscopy, cross-sectional HRTEM with SAED and EDS established that the top Ge layer was recrystallized during annealing with faceted crystallites. The top layer has a small tensile strain of around +0.4\% and has estimated dislocation density of 2.7 x 10^{7}cm^{-2}. The thickness, crystallinity and electrical characteristics of the top layer and the quality of the BOX layer of GeO_{2} are such that it can be utilized for device fabrication.

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preprint2020arXiv

Temperature-dependent thermal conductivity of a single Germanium nanowire measured by Optothermal Raman Spectroscopy

We investigate temperature dependent thermal conductivity k(T) in a single Ge nanowire (NW) using Optothermal Raman Spectroscopy which utilizes the temperature dependence of Raman lines as a local probe for temperature. The experiment was done from 300 K to above 700 K, a temperature range in which thermal conductivity of single NWs has been explored rarely. The thermal conductivity of Ge NWs (grown by vapor liquid solid mechanism), at around room temperature were observed to lie in the range 1.8 to 4.2 W/m.K for diameters between 50 to 110 nm. The thermal conductivity at a given temperature was found to follow a linear dependence on NW diameter, suggesting that the low magnitude of k(T) is determined by diffused scattering of phonons from the surface of NWs that reduces it severely from its bulk value. k(T) shows approximately 1/T behavior which arises from the Umklapp processes. The quantitative estimation of errors arising from the Optothermal measurement and methods to mitigate them has been discussed. We also suggest a quick way to estimate approximately the thermal conductivity of Ge and Si NWs using the above observations.

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preprint2012arXiv

Electrical and magnetic transport study on strain driven ferromagnetic insulating thin film of low doped manganite

In this paper we have created a strain driven single crystal like ferromagnetic insulating (FMI) state in a PLD grown thin film of low doped LCMO(X = 0.15)on NGO(100) substrate and make a thorough study of strain effects on the electric and magnetic transport of this film. We have studied and compared the FMI state, ferromagnetic transition temperature (TC), ferromagnetic insulating temperature (TFMI) and the resistivity of the film in details with bulk single crystals of X=0.18 to 0.22 doping region. We have found that TFMI and the localisation length of the carriers are increased and there is also a decrease in the Coulomb gap. The magneto transport behavior of the film also differs from the bulk single crystals and the magnetoresistance of the sample is nearly 20 to 75% with the application of the applied field(0 to 10 T) and it falls up to 5 to 40% below a certain temperature and the TC of the film increases to higher temperature with the increasing field. The film also shows anisotropic magnetoresistance as large as 20% depending on applied magnetic field direction.

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preprint2012arXiv

Electrical transport properties of nanostructured ferromagnetic perovskite oxides La_0.67Ca_0.33MnO_3 and La_0.5Sr_0.5CoO_3 at low temperatures (5 K > T >0.3 K) and high magnetic field

We report a comprehensive study of the electrical and magneto-transport properties of nanocrystals of La_0.67Ca_0.33MnO_3 (LCMO) (with size down to 15 nm) and La_0.5Sr_0.5CoO_3 (LSCO) (with size down to 35 nm) in the temperature range 0.3 K to 5 K and magnetic fields upto 14 T. The transport, magnetotransport and non-linear conduction (I-V curves) were analysed using the concept of Spin Polarized Tunnelling in the presence of Coulomb blockade. The activation energy of transport, Δ, was used to estimate the tunnelling distances and the inverse decay length of the tunnelling wave function (χ) and the height of the tunnelling barrier (Φ_B). The magnetotransport data were used to find out the magnetic field dependences of these tunnelling parameters. The data taken over a large magnetic field range allowed us to separate out the MR contributions at low temperatures arising from tunnelling into two distinct contributions. In LCMO, at low magnetic field, the transport and the MR are dominated by the spin polarization, while at higher magnetic field the MR arises from the lowering of the tunnel barrier by the magnetic field leading to an MR that does not saturate even at 14 T. In contrast, in LSCO, which does not have substantial spin polarization, the first contribution at low field is absent, while the second contribution related to the barrier height persists. The idea of inter-grain tunnelling has been validated by direct measurements of the non-linear I-V data in this temperature range and the I-V data was found to be strongly dependent on magnetic field. We made the important observation that a gap like feature (with magnitude ~ E_C, the Coulomb charging energy) shows up in the conductance g(V) at low bias for the systems with smallest nanocrystal size at lowest temperatures (T < 0.7 K). The gap closes as the magnetic field and the temperature are increased.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Large photoresponse of Cu:TCNQ nanowire arrays formed as aligned nanobridges

We report for the first time a large photoresponse in an array of charge transfer complex Cu:TCNQ nanowires (average diameter 30 nm) fabricated as a nanobridge device. The device shows highest photoresponse for excitation with 405 nm light which matches with its absorption peak. The current gain at zero bias can reach ~104 with an illumination power density of 2x106 W/m2. The zero bias responsivity is ~0.3 mA/W which increases on applying bias reaching 1.0 A/W or more for a bias of 2.0 Volt. Dark and illuminated I-V data are analyzed by two back-to-back Schottky diodes model, which shows the predominant photocurrent in the device arising from the photoconductive response of the nanowires.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Effect of size reduction on the ferromagnetism of the manganite La1-xCaxMnO3 (x = 0.33)

In this paper we report an investigation on the ferromagnetic state and the nature of ferromagnetic transition of nanoparticles of $\mathrm{La_{0.67}Ca_{0.33}MnO_3}$ using magnetic measurements and neutron diffraction. The investigation was made on nanoparticles with crystal size down to $15$ nm. The neutron data show that even down to a size of $15$ nm the nanoparticles show finite spontaneous magnetization ($M_S$) although the value is much reduced compared to the bulk sample. We observed a non-monotonic variation of the ferromagnetic to paramagnetic transition temperature $T_C$ with size $d$ and found that $T_C$ initially enhances on size reduction, but for $d < 50$ nm it decreases again. The initial enhancement in $T_C$ was related to an increase in the bandwidth that occured due to a compaction of the Mn-O bond length and a straightening of the Mn-O-Mn bond angle, as determined form the neutron data. The size reduction also changes the nature of the ferromagnetic to paramagnetic transition from first order to second order with critical exponents approaching mean field values. This was explained as arising from a truncation of the coherence length by the finite sample size.

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preprint2011arXiv

Electric field induced reversible control of visible photoluminescence from ZnO nanoparticles

Reversible control of the photoluminescence of ZnO occurring in the visible range, has been achieved by application of a few volts (< 5V) to a device consisting of nanostructured ZnO film sandwiched between Indium Tin Oxide electrode and polyethylene oxide-lithium perchlorate, a solid polymer electrolyte. The photoluminescence intensity shows nearly 100% modulation with a response time less than 30 seconds, when the bias is applied at the electrolyte-electrode. A model is proposed for the observed effect that is based on defect states of ZnO and the band bending at the ZnO-electrolyte interface that can be changed by the applied bias.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Non-Gaussian resistance noise in the ferromagnetic insulating state of a hole doped manganite

We report the observation of a large 1/f noise in the ferromagnetic insulating state (FMI) of a hole doped manganite single crystal of La0.80Ca0.20MnO3 which manifests hopping conductivity in presence of a Coulomb gap. The temperature dependent noise magnitude shows a deep within the FMI state, there is a sharp freeze out of the noise magnitude with temperature on cooling. As the material enters the FMI state, the noise becomes non-Gaussian as seen through probability density function and second spectra. It is proposed to arise from charge fluctuations in a correlated glassy phase of the polaronic carriers which develop in these systems as reported in recent simulation studies.

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preprint2011arXiv

Phonon dynamics of Zn(Mg,Cd)O alloy nanostructures and their phase segregation

In this paper we report phonon dynamics in chemically synthesized Zn1- xMgxO (0\leqx\leq0.07) and Zn1-yCdyO (0\leqy\leq0.03) alloy nanostructures of sizes ~10 nm using non-resonant Raman and Fourier Transformed Infrared Spectroscopy (FTIR). Substitution by Mg makes the unit cell compact while Cd substitution leads to unit cell expansion. On alloying, both A1(LO) and E1(LO) mode of wurtzite ZnO show blue shift for Zn1-xMgxO and red shift for Zn1-yCdyO alloy nanostructures due to mass defect and volume change induced by the impurity atoms. Significant shift has been observed in E1(LO) mode for Zn1-xMgxO (73 cm-1 for x = 0.07) and Zn1-yCdyO (17 cm-1 for y = 0.03) nanostructures. The variation in Zn(Mg,Cd)-O bond length determined from the blue (red) shift of IR bands on alloying with Mg (Cd) is consistent with their respective ionic sizes and the structural changes predicted by X-ray diffraction study. However, on progressive alloying one can detect phase segregation (due to presence of interstitial Mgand Cd ions) in the alloy nanostructures for relatively higher Mg and Cd concentrations. This is confirmed by the gradual absence of the characteristic IR and Raman bands of wurtzite ZnO near 400-600 cm-1 as well as by X-Ray and TEM studies.

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preprint2011arXiv

Structural and Optical properties of Zn(1-x)MgxO nanocrystals obtained by low temperature method

In this paper we report structural and optical properties of Magnesium substituted Zinc Oxide (Zn1-xMgxO) nanocrystals (~10-12nm) synthesized by low temperature route. In the low temperature synthesis route it was possible to reach x = 0.17 without segregation of Mg rich phase. The exact chemical composition has been established by quantitative analysis. Rietveld analysis of the XRD data confirms the Wurzite structure and a continuous compaction of the lattice (in particular the c-axis parameter) as x increases. There is an enhancement of the strain in the lattice as the Mg is substituted. The bandgap also gets enhanced as x is increased and reaches a value of 4eV for x = 0.17. From the TEM and the XRD data it has been concluded that when there is a phase segregation for x > 0.17, there is a shell of Mg(OH)2 on the ZnO. The absorption also shows persistence of the excitoinc absorption on Mg substitution. The nanocrystals show near band edge photo luminescence (PL) at room temperature which shows blue shift on Mg incorporation. In addition to the near band edge emission the ZnO and Zn1-xMg xO alloy nanocrystals show considerable emission in the blue-green region at wavelength of ~550 nm. We find that the relative intensity of the green emission increases with the Mg concentration for very low x (upto x = 0.05) and on further increase of the Mg concentration there is a sharp decrease of relative intensity of the green emission eventually leading to a complete quenching of blue emission. It is concluded that due to phase segregation (for x \geq 0.20), the formation of the shell of Mg(OH)2 on the ZnO leads to quenching of the green emission .However, this shell formation does not have much effect on the near band edge PL.

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preprint2011arXiv

Structure and optical properties of Cd substituted ZnO (Zn1-xCdxO) nanostructures synthesized by high pressure solution route

We report synthesis of Cd substituted ZnO nanostructures (Zn1-xCdxO with x upto \approx .09) by high pressure solution growth method. The synthesized nanostructures comprise of nanocrystals that are both particles (~ 10-15 nm) and rods which grow along (002) direction as established by Transmission electron microscope (TEM) and X-ray diffraction (XRD) analysis. Rietveld analysis of the XRD data shows monotonous increase of the unit cell volume with the increase of Cd concentration. The optical absorption as well as the photoluminescence (PL) shows red shift on Cd substitution. The line width of the PL spectrum is related to the strain inhomogenity and it peaks in the region where the CdO phase separates from the Zn1-xCdxO nanostructures. The time resolved photoemission showed a long lived (~10ns) component. We propose that the PL behavior of the Zn1-xCdxO is dominated by strain in the sample with the redshift of the PL linked to the expansion of the unit cell volume on Cd substitution.

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preprint2011arXiv

Voltage bias induced modification of all oxide Pr0.5Ca0.5MnO3/SrTi0.95Nb.05O3 junctions

In this paper we report what happens to a pristine oxide junction Pr0.5Ca0.5MnO3/SrTi0.95Nb.05O3 (PCMO/Nb:STO), when it is subjected to cycling of voltage bias of moderate value ({\pm}4V). It is found that the initial cycling leads to formation of a permanent state of lower resistance where the lower resistance arises predominantly due to development of a shunt across the device film (PCMO). On successive voltage cycling with increasing magnitude, this state transforms into states of successive lower resistance that can be transformed back to the initial stable state on cycling to below a certain bias. A simple model based on p-n junction with shunt has been used to obtain information on the change of the junction on voltage cycling. It has been shown that the observation can be explained if the voltage cycling leads to lowering of barrier at the interface and also reduction in series resistance. It is suggested that this lowering can be related to the migration of oxygen ions and vacancies at the junction region. Cross-sectional imaging of the junction shows formation of permanent filamentary bridges across the thickness of the PCMO after the pristine p-n junction is first taken through a voltage cycle, which would explain appearance of a finite shunt across the p-n junction.

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preprint2010arXiv

Single step precursor free synthesis and characterisation of stable Au nanochains by laser ablation

In this paper we report a simple one step and one-pot synthesis of stable assembly of Au nanoparticles (diameter 8-10nm) into chains in an Ethylene Glycol medium, using only a solid metallic Au target and a pulsed excimer laser (λ=248nm). The process reported does not use any precursor, reducing agent or surfactant and thus can be described as chemistry free synthesis route. The Au nanoparticle-ethylene glycol nanochains (with unbroken lengths often more than few microns) formed in liquid medium are mechanically as well as thermally stable and can be transferred unchanged into a solid substrate which can span a large surface area. The nanochains show a broad optical absorption covering almost the complete visible spectrum. A hybrid consisting of Au nanochains and separated nanoparticles can be formed by the same method using a proper choice of the laser fluence and Ethylene Glycol /DI water concentration. The Au nanochain - Ethylene Glycol hybrid material formed by the above method shows enhanced low frequency dielectric constant (one order more than the Ethylene Glycol) and enhanced electrical conductivity even with low Au fill fraction can show enhancement up to two orders. Based on 2D-NMR experiments we suggest that the quasi-1D chain like structure forms due to the formation of dimer and trimers of Ethylene Glycol molecules that attach to the Au nanoparticles formed by the ablation process and facilitate the chain formation.

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preprint2009arXiv

Field induced reversible control of visible luminescence in ZnO nanostructures

In this work, a reversible control over the visible luminescence of phosphor ZnO is achieved by the application of a few volts (<5V) to nanostructured ZnO film sandwiched between ITO and LiClO4/PEO solid electrolyte. Since ZnO is a good absorbing material but ITO-Glass substrate is transparent in the range of 320-375 nm, the ZnO-ITO interface has been illuminated by a 345 nm light passing through the ITO glass substrate and the emitted light near 545 nm has been collected in reflection mode. When the solid polymer electrolyte is negatively biased, up to 107 percent enhancement in the visible luminescence has been observed, whereas a complete quenching (87 percent reduction) of the visible emission has been seen when it is positively biased. The sharp near band edge (NBE) emission in the ultraviolet region however has no dependence within the voltage range we are working. The luminescence output follows variations in the applied voltage up to maximum frequency limited by response time of the device which lies within the range of 20-30 sec. The upward band bending created by application of negative bias to the conductive polymer populates increasing number of defect levels above the Fermi level which enhances the visible photoluminescence and vice versa.

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preprint2000arXiv

Magnetic Field resulting from non-linear electrical transport in single crystals of charge-ordered Pr$_{0.63}$ Ca$_{0.37}$ MnO$_{3}$}

In this letter we report that the current induced destabilization of the charge ordered (CO) state in a rare-earth manganite gives rise to regions with ferromagnetic correlation. We did this experiment by measurement of the I-V curves in single crystal of the CO system Pr$_{0.63}$Ca$_{0.37}$MnO$_{3}$ and simultanously measuring the magnetization of the current carrying conductor using a high T$_c$ SQUID working at T = 77K. We have found that the current induced destabilization of the CO state leads to a regime of negative differential resistance which leads to a small enhancement of the magnetization of the sample, indicating ferromagnetically aligned moments.

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