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Researcher profile

A. K. Raychaudhuri

A. K. Raychaudhuri contributes to research discovery and scholarly infrastructure.

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physics.app-phcond-mat.mtrl-scicond-mat.str-elphysics.ins-det

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Published work

5 published item(s)

preprint2020arXiv

Broad Band Single Germanium Nanowire Photodetectors with Surface Oxide Controlled High Optical Gain

We have investigated photoconductive properties of single Germanium Nanowires(NWs)of diameter less than 100 nm in the spectral range of 300 to 1100 nm showing ultra large peak Responsivity in excess of 10^{7}AW^{-1}.The NWs were grown by Vapor Liquid Solid method using Au nanoparticle as catalyst. In this report we discuss the likely origin of the ultra large responsivity that may arise from a combination of various physical effects which are a): Ge and GeO_{x} interface states which act as scavengers of electrons from the photo-generated pairs,leaving the holes free to reach the electrodes,b) Schottky barrier at the metal and NW interface which gets lowered substantially due to carrier diffusion in contact region and (c) photodetector length being small (approximately few μm), negligible loss of photogenerated carriers due to recombination at defect sites. We have observed from power dependence of the optical gain that the gain is controlled by trap states. We find that the surface of the nanowire has presence of a thin layer of GeO_{x} (as evidenced from HRTEM study) which provide interface states. It is observed that these state play a crucial role to provide a radial field for separation of photogenerated electron and hole pair which in turn leads to very high effective photoconductive gain that reaches a very high at low illumination density.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Continuous transition from weakly localized regime to strong localization regime in Nd_{0.7}La_{0.3}NiO_{3} films

We report an investigation of Metal Insulator Transition (MIT) using conductivity and magnetoconductance (MC) measurements down to 0.3 K in Nd_{0.7}La_{0.3}NiO_{3} films grown on crystalline substrates of LaAlO_{3} (LAO), SrTiO_{3} (STO), and NdGaO_{3}(NGO) by pulsed laser deposition. The film grown on LAO experiences a compressive strain and shows metallic behavior with the onset of a weak resistivity upturn below 2 K which is linked to the onset of weak localization contribution. Films grown on STO and NGO show a crossover from a Positive Temperature Coefficient (PTC) resistance regime to Negative Temperature Coefficient (NTC) resistance regime at definite temperatures. We establish that a cross-over from PTC to NTC on cooling does not necessarily constitute a MIT because the extrapolated conductivity at zero temperature σ_{0} though small (<10 S/cm) is finite, signalling the existence of a bad metallic state and absence of an activated transport. The value of σ_{0} for films grown on NGO is reduced by a factor of 40 compared to that for films grown on STO. We show that a combination of certain physical factors makes substituted nickelate (that are known to exhibit first order Mott type transition), undergo a continuous transition as seen in systems undergoing disorder/composition driven Anderson transition. The MC measurement also support the above observation and show that at low temperature there exists a positive MC that arises from the quantum interference which co-exists with a spin-related negative MC that becomes progressively stronger as the electrons approach a strongly localized state in the film grown on NGO.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Enhanced broad band photoresponse of a partially suspended horizontal array of Silicon microlines fabricated on Silicon-On-Insulator wafers

We report a high Responsivity broad band photo-detector working in the wavelength range 400 nm to 1100 nm in a horizontal array of Si microlines (line width ~1 micron) fabricated on a Silicon-on-Insulator (SOI) wafer. The array was made using a combination of plasma etching, wet etching and electron beam lithography. It forms a partially suspended (nearly free) Silicon microstructure on SOI. The array detector under full illumination of the device shows a peak Responsivity of 18 A/W at 800 nm, at a bias of 1V which is more than an order of magnitude of the Responsivity in a commercial Si detector. In a broad band of 400 nm to 1000 nm the Responsivity of the detector is in excess of 10A/W. We found that the suspension of the microlines in the array is necessary to obtain such high Responsivity. The suspension isolates the microlines from the bulk of the wafer and inhibits carrier recombination by the underlying oxide layer leading to enhanced photo-response. This has been validated through simulation. By using focused illumination of selected parts of a single microline of the array, we could isolate the contributions of the different parts of the microline to the photo-current.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Fabrication of Germanium-on-insulator in a Ge wafer with a crystalline Ge top layer and buried GeO2 layer by Oxygen ion implantation

The paper reports fabrication of Germanium-on-Insulator (GeOI) wafer by Oxygen ion implantation of an undoped single crystalline Ge wafer of orientation (100). Oxygen ions of energy 200 keV were implanted. The implanted wafer was subjected to Rapid Thermal Annealing to 650 C. The resulting wafer has a top crystalline Ge layer of 220 nm thickness and Buried Oxide layer (BOX) layer of good quality crystalline Germanium oxide with thickness around 0.62 micron. The crystalline BOX layer has hexagonal crystal structure with lattice constants close to the standard values. Raman Spectroscopy, cross-sectional HRTEM with SAED and EDS established that the top Ge layer was recrystallized during annealing with faceted crystallites. The top layer has a small tensile strain of around +0.4\% and has estimated dislocation density of 2.7 x 10^{7}cm^{-2}. The thickness, crystallinity and electrical characteristics of the top layer and the quality of the BOX layer of GeO_{2} are such that it can be utilized for device fabrication.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Temperature-dependent thermal conductivity of a single Germanium nanowire measured by Optothermal Raman Spectroscopy

We investigate temperature dependent thermal conductivity k(T) in a single Ge nanowire (NW) using Optothermal Raman Spectroscopy which utilizes the temperature dependence of Raman lines as a local probe for temperature. The experiment was done from 300 K to above 700 K, a temperature range in which thermal conductivity of single NWs has been explored rarely. The thermal conductivity of Ge NWs (grown by vapor liquid solid mechanism), at around room temperature were observed to lie in the range 1.8 to 4.2 W/m.K for diameters between 50 to 110 nm. The thermal conductivity at a given temperature was found to follow a linear dependence on NW diameter, suggesting that the low magnitude of k(T) is determined by diffused scattering of phonons from the surface of NWs that reduces it severely from its bulk value. k(T) shows approximately 1/T behavior which arises from the Umklapp processes. The quantitative estimation of errors arising from the Optothermal measurement and methods to mitigate them has been discussed. We also suggest a quick way to estimate approximately the thermal conductivity of Ge and Si NWs using the above observations.

0 citations0 reviewsNo code linkedOpen access