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Researcher profile

Barnali Ghosh

Barnali Ghosh contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

2 published item(s)

preprint2013arXiv

Growth and physical property study of single nanowire (diameter ~ 45nm) of half doped Manganite

We report here the growth and characterization of functional oxide nanowire of hole doped manganite of La0.5Sr0.5MnO3 (LSMO). We also report four probe electrical resistance measurement of single nanowire of LSMO (diameter ~ 45nm) using FIB fabricated electrodes. The wires were fabricated by hydrothermal method using autoclave at a temperature of 270 oC. The elemental analysis and physical property like electrical resistivity were studied at individual nanowire level. The quantitative determination of Mn valency and elemental mapping of constituent elements was done by using Electron Energy Loss Spectroscopy (EELS) in the Scanning Transmission Electron Microscopy (STEM) mode. We addressed the important issue of whether as a result of size reduction the nanowires can retain the desired composition, structure and physical properties. The nanowires used were found to have a ferromagnetic transition (TC) at around 325 K which is very close to the bulk value of around 330 K found in single crystal of the same composition confirming that the functional behavior is likely to be retained even after size reduction of the nanowires to a diameter of 45 nm. The electrical resistivity shows insulating behavior within the temperature range measured, which is very much similar to the bulk system.

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preprint2011arXiv

Voltage bias induced modification of all oxide Pr0.5Ca0.5MnO3/SrTi0.95Nb.05O3 junctions

In this paper we report what happens to a pristine oxide junction Pr0.5Ca0.5MnO3/SrTi0.95Nb.05O3 (PCMO/Nb:STO), when it is subjected to cycling of voltage bias of moderate value ({\pm}4V). It is found that the initial cycling leads to formation of a permanent state of lower resistance where the lower resistance arises predominantly due to development of a shunt across the device film (PCMO). On successive voltage cycling with increasing magnitude, this state transforms into states of successive lower resistance that can be transformed back to the initial stable state on cycling to below a certain bias. A simple model based on p-n junction with shunt has been used to obtain information on the change of the junction on voltage cycling. It has been shown that the observation can be explained if the voltage cycling leads to lowering of barrier at the interface and also reduction in series resistance. It is suggested that this lowering can be related to the migration of oxygen ions and vacancies at the junction region. Cross-sectional imaging of the junction shows formation of permanent filamentary bridges across the thickness of the PCMO after the pristine p-n junction is first taken through a voltage cycle, which would explain appearance of a finite shunt across the p-n junction.

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