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Stuart Parkin

Stuart Parkin appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.supr-conEmerging TechnologiesHardware Architecture

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Published work

8 published item(s)

preprint2020arXiv

In situ modification of delafossite type PdCoO2 bulk single crystal for reversible hydrogen sorption and fast hydrogen evolution

The observation of extraordinarily high conductivity in delafossite-type PdCoO2 is of great current interest, and there is some evidence that electrons behave like a fluid when flowing in bulk crystals of PdCoO2. Thus, this material is an ideal platform for the study of the electron transfer processes in heterogeneous reactions. Here, we report the use of bulk single crystal PdCoO2 as a promising electrocatalyst for hydrogen evolution reactions (HERs). An overpotential of only 31 mV results in a current density of 10 mA cm^(-2), accompanied by high long-term stability. We have precisely determined that the crystal surface structure is modified after electrochemical activation with the formation of strained Pd nanoclusters in the surface layer. These nanoclusters exhibit reversible hydrogen sorption and desorption, creating more active sites for hydrogen access. The bulk PdCoO2 single crystal with ultra-high conductivity, which acts as a natural substrate for the Pd nanoclusters, provides a high-speed channel for electron transfer

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

ShiftsReduce: Minimizing Shifts in Racetrack Memory 4.0

Racetrack memories (RMs) have significantly evolved since their conception in 2008, making them a serious contender in the field of emerging memory technologies. Despite key technological advancements, the access latency and energy consumption of an RM-based system are still highly influenced by the number of shift operations. These operations are required to move bits to the right positions in the racetracks. This paper presents data placement techniques for RMs that maximize the likelihood that consecutive references access nearby memory locations at runtime thereby minimizing the number of shifts. We present an integer linear programming (ILP) formulation for optimal data placement in RMs, and revisit existing offset assignment heuristics, originally proposed for random-access memories. We introduce a novel heuristic tailored to a realistic RM and combine it with a genetic search to further improve the solution. We show a reduction in the number of shifts of up to 52.5%, outperforming the state of the art by up to 16.1%.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Towards Weyltronics: Realization of epitaxial NbP and TaP Weyl Semimetal thin films

Weyl Semimetals (WSMs), a recently discovered topological state of matter, exhibit an electronic structure governed by linear band dispersions and degeneracy (Weyl) points leading to rich physical phenomena, which are yet to be exploited in thin film devices. While WSMs were established in the monopnictide compound family several years ago, the growth of thin films has remained a challenge. Here, we report the growth of epitaxial thin films of NbP and TaP by means of molecular beam epitaxy. Single crystalline films are grown on MgO (001) substrates using thin Nb (Ta) buffer layers, and are found to be tensile strained (1%) and with slightly P-rich stoichiometry with respect to the bulk crystals. The resulting electronic structure exhibits topological surface states characteristic of a P-terminated surface and linear dispersion bands in agreement with the calculated band structure, and a Fermi-level shift of -0.2 eV with respect to the Weyl points. Consequently, the electronic transport is dominated by both holes and electrons with carrier mobilities close to 10^3 cm2/Vs at room-temperature. The growth of epitaxial thin films opens up the use of strain and controlled doping to access and tune the electronic structure of Weyl Semimetals on demand, paving the way for the rational design and fabrication of electronic devices ruled by topology.

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preprint2016arXiv

Butterfly Magnetoresistance, Quasi-2D Dirac Fermi Surfaces, and a Topological Phase Transition in ZrSiS

Magnetoresistance (MR), the change of a material's electrical resistance in response to an applied magnetic field, is a technologically important property that has been the topic of intense study for more than a quarter century. Here we report the observation of an unusual "butterfly" shaped titanic angular magnetoresistance (AMR) in the non-magnetic, Dirac material, ZrSiS. The MR is large and positive, reaching nearly 1.8 x 10^5 percent at 9 T and 2 K at an angle of 45o between the applied current (along the a-axis) and the applied field (90o is H parallel to the c-axis). Approaching 90o, a "dip" is seen in the AMR which can be traced to an angle dependent deviation from the H^2 law. By analyzing the SdH oscillations at different angles, we find that ZrSiS has a combination of 2D and 3D Dirac pockets comprising its Fermi surface and that the anomalous transport behavior coincides with a topological phase transition whose robust signature is evident despite transport contributions from other parts of the Fermi surface. We also find that as a function of angle, the temperature dependent resistivity in high field displays a broad peak-like behavior, unlike any known Dirac/Weyl material. The combination of very high mobility carriers and multiple Fermi surfaces in ZrSiS allow for large bulk property changes to occur as a function of angle between applied fields makes it a promising platform to study the physics stemming from the coexistence of 2D and 3D Dirac electrons.

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preprint2016arXiv

Superconductivity in Weyl Semimetal Candidate MoTe2

In recent years, layered transition-metal dichalcogenides (TMDs) have attracted considerable attention because of their rich physics; for example, these materials exhibit superconductivity, charge density waves, and the valley Hall effect. As a result, TMDs have promising potential applications in electronics, catalysis, and spintronics. Despite the fact that the majority of related research focuses on semiconducting TMDs (e.g., MoS2), the characteristics of WTe2 are provoking strong interest in semimetallic TMDs with extremely large magnetoresistance, pressure-driven superconductivity, and the predicted Weyl semimetal (WSM) state. In this work, we investigate the sister compound of WTe2, MoTe2, which is also predicted to be a WSM and a quantum spin Hall insulator in bulk and monolayer form, respectively. We find that MoTe2 exhibits superconductivity with a resistive transition temperature Tc of 0.1 K. The application of a small pressure (such as 0.4 GPa) is shown to dramatically enhance the Tc, with a maximum value of 8.2 K being obtained at 11.7 GPa (a more than 80-fold increase in Tc). This yields a dome-shaped superconducting phase diagram. Further explorations into the nature of the superconductivity in this system may provide insights into the interplay between strong correlations and topological physics.

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preprint2016arXiv

Thermal radiative near field transport between vanadium dioxide and silicon oxide across the metal insulator transition

The thermal radiative near field transport between vanadium dioxide and silicon oxide at submicron distances is expected to exhibit a strong dependence on the state of vanadium dioxide which undergoes a metal-insulator transition near room temperature. We report the measurement of near field thermal transport between a heated silicon oxide micro-sphere and a vanadium dioxide thin film on a titanium oxide (rutile) substrate. The temperatures of the 15 nm vanadium dioxide thin film varied to be below and above the metal-insulator-transition, the sphere temperatures were varied in a range between 100 and 200 Celsius. The measurements were performed using a vacuum-based scanning thermal microscope with a cantilevered resistive thermal sensor. We observe a thermal conductivity per unit area between the sphere and the film with a distance dependence following a power law trend and a conductance contrast larger than 2 for the two different phase states of the film.

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preprint2016arXiv

Weyl semimetals as catalysts

The search for highly efficient and low-cost catalysts is one of the main driving forces in catalytic chemistry. Current strategies for the catalyst design focus on increasing the number and activity of local catalytic sites, such as the edge-sites of molybdenum disulfides in the hydrogen evolution reaction (HER). Here, we propose and demonstrate a different principle that goes beyond local site optimization by utilizing topological electronic states, a global property of the material, to spur catalytic activity. For HER, we have found excellent catalysts among the transition-metal monopnictides - NbP, TaP, NbAs, and TaAs - which were recently discovered to be topological Weyl semimetals. In addition to the free energy considerations we explore the role of metallicity, carrier mobility and topological electronic states for remarkable HER performance of these materials. The combination of robust topological surface states and large room temperature carrier mobility both of which originate from bulk Dirac bands of the Weyl semimetal appears to be the recipe for good HER catalyst. Our work provides a guiding principle for the discovery of novel catalysts from the emerging field of topological materials.

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preprint2007arXiv

Crossover from Kondo assisted suppression to co-tunneling enhancement of tunneling magnetoresistance via ferromagnetic nanodots in MgO tunnel barriers

Recently, it has been shown that magnetic tunnel junctions with thin MgO tunnel barriers exhibit extraordinarily high tunneling magnetoresistance (TMR) values at room temperature1, 2. However, the physics of spin dependent tunneling through MgO barriers is only beginning to be unravelled. Using planar magnetic tunnel junctions in which ultra-thin layers of magnetic metals are deposited in the middle of a MgO tunnel barrier here we demonstrate that the TMR is strongly modified when these layers are discontinuous and composed of small pancake shaped nanodots. At low temperatures, in the Coulomb blockade regime, for layers less than ~1 nm thick, the conductance of the junction is increased at low bias consistent with Kondo assisted tunneling. In the same regime we observe a suppression of the TMR. For slightly thicker layers, and correspondingly larger nanodots, the TMR is enhanced at low bias, consistent with co-tunneling.

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