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Binghai Yan

Binghai Yan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.supr-conphysics.comp-phcond-mat.othercond-mat.quant-gashep-thnucl-thphysics.app-phphysics.chem-ph

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Published work

79 published item(s)

preprint2022arXiv

Charge density wave order in kagome metal AV$_3$Sb$_5$ (A= Cs, Rb, K)

We employ polarization-resolved electronic Raman spectroscopy and density functional theory to study the primary and secondary order parameters, as well as their interplay, in the charge density wave (CDW) state of the kagome metal AV3Sb5. Previous x-ray diffraction data at 15K established that the CDW order in CsV3Sb5 comprises of a 2x2x4 structure: one layer of inverse-star-of-David and three consecutive layers of star-of-David pattern. We analyze the lattice distortions based the 2x2x4 structure at 15K, and find that U lattice distortion is the primary order parameter while M and L distortions are secondary order parameters for Vanadium displacements. This conclusion is confirmed by the calculation of bare susceptibility that shows a broad peak at around qz=0.25 along the hexagonal Brillouin zone face central line (U-line). We also identify several phonon modes emerging in the CDW state, which are lattice vibration modes related to V and Sb atoms as well as alkali atoms. The detailed temperature evolution of these modes' frequencies, HWHM, and integrated intensities support a phase diagram with two successive structural phase transitions in CsV3Sb5: the first one with a primary order parameter appearing at TS=94K and the second isostructural one appearing at around 70K.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Direct observation of vortices in an electron fluid

Vortices are the hallmarks of hydrodynamic flow. Recent studies indicate that strongly-interacting electrons in ultrapure conductors can display signatures of hydrodynamic behavior including negative nonlocal resistance, Poiseuille flow in narrow channels, and a violation of the Wiedemann-Franz law. Here we provide the first visualization of whirlpools in an electron fluid. By utilizing a nanoscale scanning superconducting quantum interference device on a tip (SQUID-on-tip) we image the current distribution in a circular chamber connected through a small aperture to an adjacent narrow current carrying strip in high-purity type-II Weyl semimetal WTe2. In this geometry, the Gurzhi momentum diffusion length and the size of the aperture determine the vortex stability phase diagram. We find that the vortices are present only for small apertures, whereas the flow is laminar (non-vortical) for larger apertures, consistent with the theoretical analysis of the hydrodynamic regime and in contrast to the expectations of ballistic transport in WTe2 at low temperatures. Moreover, near the vortical-to-laminar transition, we observe a single vortex in the chamber splitting into two vortices, a behavior that can occur only in the hydrodynamic regime and cannot be sustained by ballistic transport. These findings suggest a novel mechanism of hydrodynamic flow: instead of the commonly considered electron-electron scattering at the bulk, which becomes extremely weak at low temperatures, the spatial diffusion of charge carriers' momenta is enabled by small-angle scattering at the planar surfaces of thin pure crystals. This surface-induced para-hydrodynamics opens new avenues for exploring and utilizing electron fluidics in high-mobility electron systems.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Exchange-biased topological transverse thermoelectric effects in a Kagome ferrimagnet

Kagome metal TbMn6Sn6 was recently discovered to be a ferrimagnetic topological Dirac material by scanning tunneling microscopy/spectroscopy measurements. Here, we report the observation of large anomalous Nernst effect and anomalous thermal Hall effect in this compound. The anomalous transverse transport is consistent with the Berry curvature contribution from the massive Dirac gaps in the 3D momentum space as demonstrated by our first-principles calculations. Furthermore, the transverse thermoelectric transport exhibits asymmetry with respect to the applied magnetic field, i.e., an exchange-bias behavior. Together, these features place TbMn6Sn6 as a promising system for the outstanding thermoelectric performance based on anomalous Nernst effect.

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preprint2022arXiv

Facet dependent surface energy gap on magnetic topological insulators

Magnetic topological insulators (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_n$ ($n=0,1,2,3$) are promising to realize exotic topological states such as the quantum anomalous Hall effect (QAHE) and axion insulator (AI), where the Bi$_2$Te$_3$ layer introduces versatility to engineer electronic and magnetic properties. However, whether surface states on the Bi$_2$Te$_3$ terminated facet are gapless or gapped is debated, and its consequences in thin-film properties are rarely discussed. In this work, we find that the Bi$_2$Te$_3$ terminated facets are gapless for $n \ge 1$ compounds by calculations. Despite that the surface Bi$_2$Te$_3$ (one layer or more) and underlying MnBi$_2$Te$_4$ layers hybridize and give rise to a gap, such a hybridization gap overlaps with bulk valence bands, leading to a gapless surface after all. Such a metallic surface poses a fundamental challenge to realize QAHE or AI, which requires an insulating gap in thin films with at least one Bi$_2$Te$_3$ surface. In theory, the insulating phase can still be realized in a film if both surfaces are MnBi$_2$Te$_4$ layers. Otherwise, it requires that the film thickness is less than 10$\sim$20 nm to push down bulk valence bands via the size effect. Our work paves the way to understand surface states and design bulk-insulating quantum devices in magnetic topological materials.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Imaging Chern mosaic and Berry-curvature magnetism in magic-angle graphene

Charge carriers in magic angle graphene come in eight flavors described by a combination of their spin, valley, and sublattice polarizations. When the inversion and time reversal symmetries are broken by the substrate or by strong interactions, the degeneracy of the flavors can be lifted and their corresponding bands can be filled sequentially. Due to their non-trivial band topology and Berry curvature, each of the bands is classified by a topological Chern number, leading to the quantum anomalous Hall and Chern insulator states at integer fillings $ν$ of the bands. It has been recently predicted, however, that depending on the local atomic-scale arrangements of the graphene and the encapsulating hBN lattices, rather than being a global topological invariant, the Chern number C may become position dependent, altering transport and magnetic properties of the itinerant electrons. Using a SQUID-on-tip, we directly image the nanoscale Berry-curvature-induced equilibrium orbital magnetism, the polarity of which is governed by the local Chern number, and detect its two constituent components associated with the drift and the self-rotation of the electronic wave packets. At $ν=1$, we observe local zero-field valley-polarized Chern insulators forming a mosaic of microscopic patches of C=-1, 0, or 1, governed by the local sublattice polarization, consistent with predictions. Upon further filling, we find a first-order phase transition due to recondensation of electrons from valley K to K', which leads to irreversible flips of the local Chern number and the magnetization, and to the formation of valley domain walls giving rise to hysteretic global anomalous Hall resistance. The findings shed new light on the structure and dynamics of topological phases and call for exploration of the controllable formation of flavor domain walls and their utilization in twistronic devices.

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preprint2022arXiv

Observation of anomalous amplitude modes in the kagome metal CsV$_3$Sb$_5$

The charge-density wave (CDW) phase is often accompanied by the condensation of a soft acoustic phonon mode, giving rise to lattice distortion and charge density modulation. This picture was challenged for the recently discovered kagome metal CsV$_3$Sb$_5$, based on the evidence of absence of soft phonons. Here we report the observation of Raman-active CDW amplitude modes in this material, which are collective excitations typically thought to emerge out of frozen soft phonons. The amplitude modes strongly hybridize with other superlattice modes, imparting them with clear temperature-dependent frequency shift and broadening, rarely seen in other known CDW materials. Both the mode mixing and the large amplitude mode frequencies suggest that the CDW exhibits the character of strong electron-phonon coupling, a regime in which acoustic phonon softening can cease to exist. The observation of amplitude modes in the absence of soft phonons highlights the unconventional nature of the CDW in CsV$_3$Sb$_5$.

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preprint2022arXiv

Orbital shift-induced boundary obstructed topological materials with a large energy gap

We propose boundary obstructed topological phases caused by Wannier orbital shift between ordinary atomic sites, which, however, cannot be indicated by symmetry eigenvalues at high symmetry momenta (symmetry indicators) in bulk. On the open boundary, Wannier charge centers can shift to different atoms from those in bulk, leading to in-gap surface states, higher-order hinge states or corner states. To demonstrate such orbital-shift-induced boundary obstructed topological insulators, we predict eight material candidates, all of which were overlooked in present topological databases. Metallic surface states, hinge states, or corner states cover the large bulk energy gap (for example, more than 1 eV in TlGaTe$_2$) at related boundary, which are ready for experimental detection. Additionally, we find these materials are also fragile topological insulators with hourglass like surface states.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Twisted photovoltaics at terahertz frequencies from momentum shift current

The bulk photovoltaic effect (BPVE) converts light into a coherent dc current at zero bias, through what is commonly known as the shift current. This current has previously been attributed to the displacement of the electronic wave function center in real space, when the sample is excited by light. We reveal that materials like twisted bilayer graphene (TBG) with a flatband dispersion are uniquely suited to maximize the BPVE because they lead to an enhanced shift in the momentum space, unlike any previously known shift current mechanism. We identify properties of quantum geometry, which go beyond the quantum geometric tensor, and are unrelated to Berry charges, as the physical origin of the large BPVE we observe in TBG. Our calculations show that TBG with a band gap of several meV exhibits a giant BPVE in a range of 0.2-1 THz, which represents the strongest BPVE reported so far at this frequency in a two-dimensional material and partially persists even a room temperature. Our paper provides a design principle for shift current generation, which applies to a broad range of twisted heterostructures with the potential to overcome the so-called "terahertz gap" in THz sensing.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Anomalous Hall effect in weak-itinerant ferrimagnet FeCr$_2$Te$_4$

We carried out a comprehensive study of electronic transport, thermal and thermodynamic properties in FeCr$_2$Te$_4$ single crystals. It exhibits bad-metallic behavior and anomalous Hall effect (AHE) below a weak-itinerant paramagentic-to-ferrimagnetic transition $T_c$ $\sim$ 123 K. The linear scaling between the anomalous Hall resistivity $ρ_{xy}$ and the longitudinal resistivity $ρ_{xx}$ implies that the AHE in FeCr$_2$Te$_4$ is most likely dominated by extrinsic skew-scattering mechanism rather than intrinsic KL or extrinsic side-jump mechanism, which is supported by our Berry phase calculations.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Chirality induced Giant Unidirectional Magnetoresistance in Twisted Bilayer Graphene

Twisted bilayer graphene (TBG) exhibits fascinating correlation-driven phenomena like the superconductivity and Mott insulating state, with flat bands and a chiral lattice structure. We find by quantum transport calculations that the chirality leads to a giant unidirectional magnetoresistance (UMR) in TBG, where the unidirectionality refers to the resistance change under the reversal of the direction of the current or magnetic field. We point out that flat bands significantly enhance this effect. The UMR increases quickly upon reducing the twist angle and reaches about 20\% for an angle of 1.5$^\circ$ in a 10 T in-plane magnetic field. We propose the band structure topology (asymmetry), which leads to a direction-sensitive mean free path, as a useful way to anticipate the UMR effect. The UMR provides a probe for chirality and band flatness in the twisted bilayers.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Active Learning Algorithm for Computational Physics

In large-scale computation of physics problems, one often encounters the problem of determining a multi-dimensional function, which can be time-consuming when computing each point in this multi-dimensional space is already time-demanding. In the work, we propose that the active learning algorithm can speed up such calculations. The basic idea is to fit a multi-dimensional function by neural networks, and the key point is to make the query of labeled data economically by using a stratagem called "query by committee". We present the general protocol of this fitting scheme, as well as the procedure of how to further compute physical observables with the fitted functions. We show that this method can work well with two examples, which are quantum three-body problem in atomic physics and the anomalous Hall conductivity in condensed matter physics, respectively. In these examples, we show that one reaches an accuracy of few percent error for computing physical observables with less than $10\%$ of total data points compared with uniform sampling. With these two examples, we also visualize that by using the active learning algorithm, the required data are added mostly in the regime where the function varies most rapidly, which explains the mechanism for the efficiency of the algorithm. We expect broad applications of our method on various kind of computational physics problems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

An electron-counting rule to determine the interlayer magnetic coupling of the van der Waals materials

In layered magnetic materials, the magnetic coupling between neighboring van der Waals layers is challenging to understand and anticipate, although the exchange interaction inside a layer can be well rationalized for example by the superexchange mechanism. In this work, we elucidate the interlayer exchange mechanism and propose an electron-counting rule to determine the interlayer magnetic order between van der Waals layers, based on counting the $d$-orbital occupation ($d^n$, where $n$ is the number of $d$-electrons at the magnetic cation). With this rule, we classify magnetic monolayers into two groups, type-I ($n<5$) and type-II ($n\geq5$), and derive three types of interlayer magnetic coupling for both insulators and metals. The coupling between two type-II layers prefers the antiferromagnetic (AFM) order, while type-I and type-II interfaces favor the ferromagnetic (FM) way. However, for two type-I layers, they display competition between FM and AFM orders and even lead to the stacking dependent magnetism. Additionally, metallic layers can also be incorporated into this rule with a minor correction from the free carrier hopping. Therefore, this rule provides simple guidance to understand the interlayer exchange and further design van der Waals junctions with desired magnetic orders.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Anomalous Hall effect in Weyl semimetal half Heusler compounds RPtBi (R = Gd and Nd)

Topological materials ranging from topological insulators to Weyl and Dirac semimetals form one of the most exciting current fields in condensed-matter research. Many half-Heusler compounds, RPtBi (R= rare earth) have been theoretically predicted to be topological semimetals. Among various topological attributes envisaged in RPtBi, topological surface states, chiral anomaly and planar Hall effect have been observed experimentally. Here, we report on an unusual intrinsic anomalous Hall effect (AHE) in the antiferromagnetic Heusler Weyl semimetal compounds GdPtBi and NdPtBi that is observed over a wide temperature range. In particular, GdPtBi exhibits an anomalous Hall conductivity of up to 60 ohm-1cm-1 and an anomalous Hall angle as large as 23%. Muon spin resonance (mu-SR) studies of GdPtBi indicate a sharp antiferromagnetic transition (T_N) at 9 K without any noticeable magnetic correlations above T_N. Our studies indicate that Weyl points in these half-Heuslers are induced by a magnetic field via exchange-splitting of the electronic bands at or near to the Fermi energy which is the source of the chiral anomaly and the AHE.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Consequences of Time-reversal-symmetry Breaking in the Light-Matter Interaction: Berry Curvature, Quantum Metric and Diabatic Motion

Nonlinear optical response is well studied in the context of semiconductors and has gained a renaissance in studies of topological materials in the recent decade. So far it mainly deals with non-magnetic materials and it is believed to root in the Berry curvature of the material band structure. In this work, we revisit the general formalism for the second-order optical response and focus on the consequences of the time-reversal-symmetry ($\mathcal{T}$) breaking, by a diagrammatic approach. We have identified three physical mechanisms to generate a dc photocurrent, i.e. the Berry curvature, the quantum metric, and the diabatic motion. All three effects can be understood intuitively from the anomalous acceleration. The first two terms are respectively the antisymmetric and symmetric parts of the quantum geometric tensor. The last term is due to the dynamical antilocalization that appears from the phase accumulation between time-reversed fermion loops. Additionally, we derive the semiclassical conductivity that includes both intra- and interband effects. We find that $\mathcal{T}$-breaking can lead to a greatly enhanced non-linear anomalous Hall effect that is beyond the contribution by the Berry curvature dipole.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Eightfold Fermionic Excitation in a Charge Density Wave Compound

Unconventional quasiparticle excitations in condensed matter systems have become one of the most important research frontiers. Beyond two- and fourfold degenerate Weyl and Dirac fermions, three-, six- and eightfold symmetry protected degeneracies have been predicted however remain challenging to realize in solid state materials. Here, charge density wave compound TaTe4 is proposed to hold eightfold fermionic excitation and Dirac point in energy bands. High quality TaTe4 single crystals are prepared, where the charge density wave is revealed by directly imaging the atomic structure and a pseudogap of about 45 meV on the surface. Shubnikov de-Haas oscillations of TaTe4 are consistent with band structure calculation. Scanning tunneling microscopy reveals atomic step edge states on the surface of TaTe4. This work uncovers that charge density wave is able to induce new topological phases and sheds new light on the novel excitations in condensed matter materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Surface Superconductivity in the type II Weyl Semimetal TaIrTe4

The search for unconventional superconductivity in Weyl semimetal materials is currently an exciting pursuit, since such superconducting phases could potentially be topologically nontrivial and host exotic Majorana modes. The layered material TaIrTe4 is a newly predicted time-reversal invariant type II Weyl semimetal with minimum number of Weyl points. Here, we report the discovery of surface superconductivity in Weyl semimetal TaIrTe4. Our scanning tunneling microscopy/spectroscopy (STM/S) visualizes Fermi arc surface states of TaIrTe4 that are consistent with the previous angle-resolved photoemission spectroscopy (ARPES) results. By a systematic study based on STS at ultralow temperature, we observe uniform superconducting gaps on the sample surface. The superconductivity is further confirmed by electrical transport measurements at ultralow temperature, with an onset transition temperature (Tc) up to 1.54 K being observed. The normalized upper critical field h*(T/Tc) behavior and the stability of the superconductivity against the ferromagnet indicate that the discovered superconductivity is unconventional with the p-wave pairing. The systematic STS, thickness and angular dependent transport measurements reveal that the detected superconductivity is quasi-one-dimensional (quasi-1D) and occurs in the surface states. The discovery of the surface superconductivity in TaIrTe4 provides a new novel platform to explore topological superconductivity and Majorana modes.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Band inversion and topology of the bulk electronic structure in FeSe${}_{0.45}$Te${}_{0.55}$

FeSe${}_{0.45}$Te${}_{0.55}$ (FeSeTe) has recently emerged as a promising candidate to host topological superconductivity, with a Dirac surface state and signatures of Majorana bound states in vortex cores. However, correlations strongly renormalize the bands compared to electronic structure calculations, and there is no evidence for the expected bulk band inversion. We present here a comprehensive angle resolved photoemission (ARPES) study of FeSeTe as function of photon energies ranging from 15 - 100 eV. We find that although the top of bulk valence band shows essentially no $k_z$ dispersion, its normalized intensity exhibits a periodic variation with $k_z$. We show, using ARPES selection rules, that the intensity oscillation is a signature of band inversion indicating a change in the parity going from $Γ$ to Z. Thus we provide the first direct evidence for a topologically non-trivial bulk band structure that supports protected surface states.

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preprint2019arXiv

Exchange Bias and Quantum Anomalous Hall Effect in the MnBi2Te4-CrI3 Heterostructure

The layered antiferromagnetic MnBi2Te4 films have been proposed to be an intrinsic quantum anomalous Hall (QAH) insulator with a large gap. To realize this proposal, it is crucial to open a magnetic gap of surface states. However, recent experiments have observed gapless surface states, indicating the absence of out-of-plane surface magnetism, and thus the quantized Hall resistance can only be achieved at the magnetic field above 6 T. In this work, we propose to induce out-of-plane surface magnetism of MnBi2Te4 films via the magnetic proximity with magnetic insulator CrI3. Our calculations have revealed a strong exchange bias ~ 40 meV, originating from the long Cr-eg orbital tails that hybridize strongly with Te p-orbitals. By stabilizing surface magnetism, the QAH effect can be realized in the MnBi2Te4/CrI3 heterostructure. Our calculations also demonstrate the high Chern number QAH state can be achieved by controlling external electric gates. Thus, the MnBi2Te4/CrI3 heterostructure provides a promising platform to realize the electrically tunable zero-field QAH effect.

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preprint2019arXiv

Finite-temperature violation of the anomalous transverse Wiedemann-Franz law

The Wiedemann-Franz (WF) law links the ratio of electronic charge and heat conductivity to fundamental constants. It has been tested in numerous solids, but the extent of its relevance to the anomalous transverse transport, which represents the topological nature of the wave function, remains an open question. Here we present a study of anomalous transverse response in the noncollinear antiferromagnet Mn$_{3}$Ge extended from room temperature down to sub-Kelvin temperature and find that the anomalous Lorenz ratio remains close to the Sommerfeld value up to 100 K, but not above. The finite-temperature violation of the WF correlation is caused by a mismatch between the thermal and electrical summations of the Berry curvature, rather than the inelastic scattering as observed in ordinary metals. This interpretation is backed by our theoretical calculations, which reveals a competition between the temperature and the Berry curvature distribution. The accuracy of the experiment is supported by the verification of the Bridgman relation between the anomalous Ettingshausen and Nernst effects. Our results identify the anomalous Lorenz ratio as an extremely sensitive probe of Berry spectrum near the chemical potential.

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preprint2019arXiv

Giant room temperature anomalous Hall effect and magnetically tuned topology in the ferromagnetic Weyl semimetal Co2MnAl

Weyl semimetals (WSM) have been extensively studied due to their exotic properties such as topological surface states and anomalous transport phenomena. Their band structure topology is usually predetermined by material parameters and can hardly be manipulated once the material is formed. Their unique transport properties appear usually at very low temperature, which sets challenges for practical device applications. In this work, we demonstrate a way to modify the band topology via a weak magnetic field in a ferromagnetic topological semimetal, Co2MnAl, at room temperature. We observe a tunable, giant anomalous Hall effect, which is induced by the transition between Weyl points and nodal rings as rotating the magnetization axis. The anomalous Hall conductivity is as large as that of a 3D quantum anomalous Hall effect (QAHE), with the Hall angle reaching a record value (21%) at the room temperature among magnetic conductors. Furthermore, we propose a material recipe to generate the giant anomalous Hall effect by gaping nodal rings without requiring the existence of Weyl points. Our work reveals an ideal intrinsically magnetic platform to explore the interplay between magnetic dynamics and topological physics for the development of a new generation of spintronic devices.

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preprint2019arXiv

Intrinsic anomalous Nernst effect amplified by disorder in a half-metallic semimetal

Intrinsic anomalous Nernst effect (ANE), like its Hall counterpart, is generated by Berry curvature of electrons in solids. Little is known about its response to disorder. In contrast, the link between the amplitude of the ordinary Nernst coefficient and the mean-free-path is extensively documented. Here, by studying Co$_3$Sn$_2$S$_2$, a topological half-metallic semimetal hosting sizable and recognizable ordinary and anomalous Nernst responses, we demonstrate an anti-correlation between the amplitude of ANE and carrier mobility. We argue that the observation, paradoxically, establishes the intrinsic origin of the ANE in this system. We conclude that various intrinsic off-diagonal coefficients are set by the way the Berry curvature is averaged on a grid involving the mean-free-path, the Fermi wavelength and the de Broglie thermal length.

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preprint2019arXiv

Observation of Spin Hall Effect in Weyl Semimetal WTe2 at Room Temperature

Discovery of topological Weyl semimetals has revealed the opportunities to realize several extraordinary physical phenomena in condensed matter physics. Specifically, these semimetals with strong spin-orbit coupling, broken inversion symmetry and novel spin texture are predicted to exhibit a large spin Hall effect that can efficiently convert the charge current to a spin current. Here we report the direct experimental observation of a large spin Hall and inverse spin Hall effects in Weyl semimetal WTe2 at room temperature obeying Onsager reciprocity relation. We demonstrate the detection of the pure spin current generated by spin Hall phenomenon in WTe2 by making van der Waals heterostructures with graphene, taking advantage of its long spin coherence length and spin transmission at the heterostructure interface. These experimental findings well supported by ab initio calculations show a large charge-spin conversion efficiency in WTe2; which can pave the way for utilization of spin-orbit induced phenomena in spintronic memory and logic circuit architectures.

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preprint2016arXiv

Active role of the nonmagnetic cations in magnetic interactions for the double-perovskite Sr2BOsO6 (B=Y, In, Sc)

Using first-principles density functional theory, we have investigated the electronic and magnetic properties of recently synthesized and characterized 5d double-perovskites Sr2BOsO6 (B=Y, In, Sc). The electronic structure calculations show that in all compounds, the Os5+ (5d3) site is the only magnetically active one, while Y3+, In3+ and Sc3+ remain in nonmagnetic states, with Sc/Y and In featuring d0 and d10 electronic configurations, respectively. Our studies reveal the important role of closed-shell (d10) versus open-shell (d0) electronic configurations of the nonmagnetic sites in determining the overall magnetic exchange interactions. Although the magnetic Os5+ (5d3) site is the same in all compounds, the magnetic super-exchange interactions mediated by non-magnetic Y/In/Sc species are strongest for Sr2ScOsO6, weakest for Sr2InOsO6, and intermediate in case of the Y (d0), due to different energy overlaps between Os-5d and Y/In/Sc-d states. This explains the experimentally observed substantial differences in the magnetic transition temperatures of these materials, despite of an identical magnetic site and underlying magnetic ground state. Furthermore, short range Os-Os exchange-interactions are more prominent than long range Os-Os interactions in these compounds, which contrasts with the behavior of other 3d-5d double-perovskites.

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preprint2016arXiv

Facet-dependent giant spin orbit torque in single crystalline antiferromagnetic Ir-Mn / ferromagnetic permalloy bilayers

There has been considerable interest in spin-orbit torques for the purpose of manipulating the magnetization of ferromagnetic (FM) films or nano-elements for spintronic technologies. Spin-orbit torques are derived from spin currents created from charge currents in materials with significant spin-orbit coupling that diffuse into an adjacent FM material. There have been intensive efforts to search for candidate materials that exhibit large spin Hall angles, i.e. efficient charge to spin current conversion. Here we report, using spin torque ferromagnetic resonance, the observation of a giant spin Hall angle of up to ~0.35 in (100) oriented single crystalline antiferromagnetic (AF) IrMn3 thin films, coupled to ferromagnetic permalloy layers, and a spin Hall angle that is about three times smaller in (111) oriented films. For the (100) oriented samples we show that the magnitude of the spin Hall angle can be significantly changed by manipulating the populations of the various AF domains through field annealing. Using ab-initio calculations we show that the triangular AF structure of IrMn3 gives rise to a substantial intrinsic spin Hall conductivity that is three times larger for the (100) than for the (111) orientations, consistent with our experimental findings.

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preprint2016arXiv

Large anomalous Hall effect driven by non-vanishing Berry curvature in non-collinear antiferromagnetic Mn3Ge

It is well established that the anomalous Hall effect that a ferromagnet displays scales with its magnetization. Therefore, an antiferromagnet that has no net magnetization should exhibit no anomalous Hall effect. Here we show that the non-collinear triangular antiferromagnet Mn3Ge exhibits a large anomalous Hall effect comparable to that of ferromagnetic metals; the magnitude of the anomalous conductivity is 500 per ohm per cm at 2 K and 50 per ohm per cm at room temperature. The angular dependence of the anomalous Hall effect measurements confirm that the small residual in-plane magnetic moment has no role in the observed effect. Our theoretical calculations demonstrate that the large anomalous Hall effect in Mn3Ge originates from a non-vanishing Berry curvature that arises from the chiral spin structure, and which also results in a large spin Hall effect, comparable to that of platinum. The present results pave the way to realize room temperature antiferromagnetic spintronics and spin Hall effect based data storage devices.

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preprint2016arXiv

Negative magnetoresistance without well-defined chirality in the Weyl semimetal TaP

Weyl semimetals (WSMs) are topological quantum states wherein the electronic bands linearly disperse around pairs of nodes, the Weyl points, of fixed (left or right) chirality. The recent discovery of WSM materials triggered an experimental search for the exotic quantum phenomenon known as the chiral anomaly. Via the chiral anomaly nonorthogonal electric and magnetic fields induce a chiral density imbalance that results in an unconventional negative longitudinal magnetoresistance, the chiral magnetic effect. Recent theoretical work suggests that this effect does not require well-defined Weyl nodes. Experimentally however, it remains an open question to what extent it survives when chirality is not well-defined, for example when the Fermi energy is far away from the Weyl points. Here, we establish the detailed Fermi surface topology of the recently identified WSM TaP via a combination of angle-resolved quantum oscillation spectra and band structure calculations. The Fermi surface forms spin-polarized banana-shaped electron and hole pockets attached to pairs of Weyl points. Although the chiral anomaly is therefore ill-defined, we observe a large negative magnetoresistance (NMR) appearing for collinear magnetic and electric fields as observed in other WSMs. In addition, we show experimental signatures indicating that such longitudinal magnetoresistance measurements can be affected by an inhomogeneous current distribution inside the sample in a magnetic field. Our results provide a clear framework how to detect the chiral magnetic effect.

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preprint2016arXiv

Observation of pseudo two dimensional electron transport in the rock salt type topological semimetal LaBi

Topological insulators are characterized by an inverted band structure in the bulk and metallic surface states on the surface. In LaBi, a semimetal with a band inversion equivalent to a topological insulator, we observe surface state like behavior in the magnetoresistance. The electrons responsible for this pseudo two dimensional transport, however, originate from the bulk states rather topological surface states, which is witnessed by the angle dependent quantum oscillations of the magnetoresistance and ab initio calculations. As a consequence, the magnetoresistance exhibits strong anisotropy with large amplitude (~ 10^5 %).

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preprint2016arXiv

Observation of Unusual Topological Surface States in Half-Heusler Compounds LnPtBi (Ln=Lu, Y)

Topological quantum materials represent a new class of matter with both exotic physical phenomena and novel application potentials. Many Heusler compounds, which exhibit rich emergent properties such as unusual magnetism, superconductivity and heavy fermion behaviour, have been predicted to host non-trivial topological electronic structures. The coexistence of topological order and other unusual properties makes Heusler materials ideal platform to search for new topological quantum phases (such as quantum anomalous Hall insulator and topological superconductor). By carrying out angle-resolved photoemission spectroscopy (ARPES) and ab initio calculations on rare-earth half-Heusler compounds LnPtBi (Ln=Lu, Y), we directly observed the unusual topological surface states on these materials, establishing them as first members with non-trivial topological electronic structure in this class of materials. Moreover, as LnPtBi compounds are non-centrosymmetric superconductors, our discovery further highlights them as promising candidates of topological superconductors.

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preprint2016arXiv

Quantum oscillations and the Fermi-surface topology of the Weyl semimetal NbP

The Weyl semimetal NbP was found to exhibit topological Fermi arcs and exotic magneto-transport properties. Here, we report on magnetic quantum-oscillation measurements on NbP and construct the 3D Fermi surface with the help of band-structure calculations. We reveal a pair of spin-orbit-split electron pockets at the Fermi energy and a similar pair of hole pockets, all of which are strongly anisotropic. The Fermi surface well explains the linear magnetoresistance observed in high magnetic fields by the quantum-limit scenario. The Weyl points that are located in the $k_z \approx π/c$ plane are found to exist 5 meV above the Fermi energy. Therefore, we predict that the chiral anomaly effect can be realized in NbP by electron doping to drive the Fermi energy to the Weyl points.

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preprint2016arXiv

Rectangular Tantalum Carbide Halides TaCX (X = Cl, Br, I) monolayer: Novel Large-Gap Quantum Spin Hall Insulator

Quantum spin Hall (QSH) insulators possess edge states that are topologically protected from backscattering. However, known QSH materials (e.g. HgTe/CdTe and InAs/GaSb quantum wells) exhibit very small energy gap and only work at low temperature, hindering their applications for room temperature devices. Based on the first-principles calculations, we predict a novel family of QSH insulators in monolayer tantalum carbide halide TaCX (X = Cl, Br, and I) with unique rectangular lattice and large direct energy gaps larger than 0.2 eV, accurately, 0.23$-$0.36 eV. The mechanism for 2D QSH effect in this system originates from a intrinsic d$-$d band inversion, different from conventional QSH systems with band inversion between s$-$p or p$-$p orbitals. Further, stain and intrinsic electric field can be used to tune the electronic structure and enhance the energy gap. TaCX nanoribbon, which has single-Dirac-cone edge states crossing the bulk band gap, exhibits a linear dispersion with a high Fermi velocity comparable to that of graphene. These 2D materials with considerable nontrivial gaps promise great application potential in the new generation of dissipationless electronics and spintronics.

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preprint2016arXiv

Superconductivity in Weyl Semimetal Candidate MoTe2

In recent years, layered transition-metal dichalcogenides (TMDs) have attracted considerable attention because of their rich physics; for example, these materials exhibit superconductivity, charge density waves, and the valley Hall effect. As a result, TMDs have promising potential applications in electronics, catalysis, and spintronics. Despite the fact that the majority of related research focuses on semiconducting TMDs (e.g., MoS2), the characteristics of WTe2 are provoking strong interest in semimetallic TMDs with extremely large magnetoresistance, pressure-driven superconductivity, and the predicted Weyl semimetal (WSM) state. In this work, we investigate the sister compound of WTe2, MoTe2, which is also predicted to be a WSM and a quantum spin Hall insulator in bulk and monolayer form, respectively. We find that MoTe2 exhibits superconductivity with a resistive transition temperature Tc of 0.1 K. The application of a small pressure (such as 0.4 GPa) is shown to dramatically enhance the Tc, with a maximum value of 8.2 K being obtained at 11.7 GPa (a more than 80-fold increase in Tc). This yields a dome-shaped superconducting phase diagram. Further explorations into the nature of the superconductivity in this system may provide insights into the interplay between strong correlations and topological physics.

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preprint2016arXiv

Time-reversal-breaking topological phases in antiferromagnetic Sr$_2$FeOsO$_6$ films

In this work, we studied time-reversal-breaking topological phases as a result of the interplay between antiferromagnetism and inverted band structures in thin films of antiferromagnetic double perovskite transition-metal Sr$_2$FeOsO$_6$. By combining the first-principles calculations and analytical models, we demonstrate that the quantum anomalous Hall phase and chiral topological superconducting phase can be realized in this system. We find that to achieve time-reversal-breaking topological phases in antiferromagnetic materials, it is essential to break the combined symmetry of time reversal and inversion, which generally exists in antiferromagnetic structures. As a result, we can utilize an external electric gate voltage to induce the phase transition between topological phases and trivial phases, thus providing an electrically controllable topological platform for the future transport experiments.

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preprint2016arXiv

Topological nematic phase in Dirac semi-metals

We study the interaction effect in a three dimensional Dirac semimetal and find that two competing orders, charge-density-wave orders and nematic orders, can be induced to gap the Dirac points. Applying a magnetic field can further induce an instability towards forming these ordered phases. The charge density wave phase is similar as that of a Weyl semimetal while the nematic phase is unique for Dirac semimetals. Gapless zero modes are found in the vortex core formed by nematic order parameters, indicating the topological nature of nematic phases. The nematic phase can be observed experimentally using scanning tunnelling microscopy.

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preprint2016arXiv

Visualizing "Fermi arcs" in the Weyl semimetal TaAs

One of the hallmarks of Weyl semi-metals is the existence of unusual topological surface states known as 'Fermi arcs' [1-3]. The formation of these states is guaranteed by the existence of bulk Weyl points with opposite chirality. Tantalum Arsenide (TaAs) [4-9], a member of the newly discovered family of Weyl semi-metals [4,5], harbors a host of non-topological ('trivial') surface states overlapping in energy with the predicted 12 'Fermi arcs'. This overlap poses a major challenge in identifying the signatures of the arcs [10]. Here we harness the inherently distinct spatial structure of trivial and Fermi arc states to visualize the Fermi arcs for the first time using scanning tunneling microscopy. We do so in four distinct ways, each of which highlights a different aspect of their unusual nature. We reveal their relatively isotropic scattering signature, their energy dispersion and its relation to the bulk Weyl points, their deep bulk penetration relative to that of non-topological surface states and their weak coupling to the atomic structure. The latter is obtained by accounting for the spatial structure of the Bloch wavefunction and its effect on the scattering properties of the electrons off lattice defects in general. It thus provides a novel analysis tool for the spectroscopic characterization of electronic wavefunctions using scanning tunneling microscopy.

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preprint2016arXiv

Weyl semimetals as catalysts

The search for highly efficient and low-cost catalysts is one of the main driving forces in catalytic chemistry. Current strategies for the catalyst design focus on increasing the number and activity of local catalytic sites, such as the edge-sites of molybdenum disulfides in the hydrogen evolution reaction (HER). Here, we propose and demonstrate a different principle that goes beyond local site optimization by utilizing topological electronic states, a global property of the material, to spur catalytic activity. For HER, we have found excellent catalysts among the transition-metal monopnictides - NbP, TaP, NbAs, and TaAs - which were recently discovered to be topological Weyl semimetals. In addition to the free energy considerations we explore the role of metallicity, carrier mobility and topological electronic states for remarkable HER performance of these materials. The combination of robust topological surface states and large room temperature carrier mobility both of which originate from bulk Dirac bands of the Weyl semimetal appears to be the recipe for good HER catalyst. Our work provides a guiding principle for the discovery of novel catalysts from the emerging field of topological materials.

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preprint2015arXiv

Discovery of a Weyl Semimetal in non-Centrosymmetric Compound TaAs

Three-dimensional (3D) topological Weyl semimetals (TWSs) represent a novel state of quantum matter with unusual electronic structures that resemble both a "3D graphene" and a topological insulator by possessing pairs of Weyl points (through which the electronic bands disperse linearly along all three momentum directions) connected by topological surface states, forming the unique "Fermi-arc" type Fermi-surface (FS). Each Weyl point is chiral and contains half of the degrees of freedom of a Dirac point, and can be viewed as a magnetic monopole in the momentum space. Here, by performing angle-resolved photoemission spectroscopy on non-centrosymmetric compound TaAs, we observed its complete band structures including the unique "Fermi-arc" FS and linear bulk band dispersion across the Weyl points, in excellent agreement with the theoretical calculations. This discovery not only confirms TaAs as the first 3D TWS, but also provides an ideal platform for realizing exotic physical phenomena (e.g. negative magnetoresistance, chiral magnetic effects and quantum anomalous Hall effect) which may also lead to novel future applications.

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preprint2015arXiv

Extremely large magnetoresistance and ultrahigh mobility in the topological Weyl semimetal NbP

Recent experiments have revealed spectacular transport properties of conceptually simple semimetals. For example, normal semimetals (e.g. WTe$_2$) have started a new trend to realize a large magnetoresistance, which is the change of electrical resistance by an external magnetic field. Weyl semimetal (WSM) is a topological semimetal with massless relativistic electrons as the three-dimensional analogue of graphene and promises exotic transport properties and surface states, which are different from those of the famous topological insulators (TIs). In this letter, we choose to utilize NbP in magneto-transport experiments because its band structure is on assembly of a WSM and a normal semimetal. Such a combination in NbP indeed leads to the observation of remarkable transport properties, an extremely large magnetoresistance of 850,000 % at 1.85 K (250 % at room temperature) in a magnetic field of 9 T without any signs of saturation, and ultrahigh carrier mobility of 5$\times$10$^6$ cm$^2$ V$^{-1}$ s$^{-1}$ accompanied by strong Shubnikov-de Hass (SdH) oscillations. NbP presents a unique example to consequent design the functionality of materials by combining the topological and conventional phases.

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preprint2015arXiv

Graphene-like Dirac states and Quantum Spin Hall Insulators in the square-octagonal MX2 (M=Mo, W; X=S, Se, Te) Isomers

We studied the square-octagonal lattice of the transition metal dichalcogenide MX$_2$ (with $M$=Mo, W; $X$=S, Se and Te), as an isomer of the normal hexagonal compound of MX$_2$. By band structure calculations, we observe the graphene-like Dirac band structure in a rectangular lattice of MX$_2$ with nonsymmorphic space group symmetry. Two bands with van Hove singularity points cross each at the Fermi energy, leading to two Dirac cones that locates at opposite momenta. Spin-orbit coupling can open a nontrivial gap at these Dirac points and induce the quantum spin Hall (QSH) phase, the 2D topological insulator. Here, square-octagonal MX$_2$ structures realize the interesting graphene physics, such as Dirac bands and QSH effect, in the transition metal dichalcogenides.

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preprint2015arXiv

Large linear magnetoresistance and weak anti-localization in Y(Lu)PtBi topological insulators

Topological insulators are new kind of Dirac materials that possess bulk insulating and surface conducting behavior. They are basically known for their unique electronic properties at the surface. Here we present the magneto-transport properties of our high quality single crystalline Y(Lu)PtBi Heusler topological insulators, which belong to a group of noncentrosymmetric superconductor with Tc = 0:8 K. Both the compounds show semi-metallic behavior with low charge carrier of 6 x1018 cm^-3 for YPtBi and 8 x1019 cm^-3 for LuPtBi at 2 K. Magneto-conductivity measurements in the tilted field indicate that the charge carriers transport through quantum interference. This provide a direct evidence of weak anti-localization below 50 K, giving a strong signature of surface transport. Most importantly, these compounds show very high unsaturated linear magnetoresistance of approximately 2000% at 10 K in a magnetic field of 60 T.

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preprint2015arXiv

Na4IrO4: Square-Planar Coordination of a Transition Metal in d5 Configuration due to Weak On-Site Coulomb Interactions

Local environments and valence electron counts primarily determine the electronic states and physical properties of transition metal complexes. For example, square-planar surroundings found in transition oxometalates such as curprates are usually associated with the d8 or d9 electron configuration. In this work, we address an exotic square-planar mono-oxoanion [IrO4]^{4-} as observed in Na4IrO4 with Ir(IV) in d^5 configuration, and characterize the chemical bonding by experiment and ab initio calculations. We find that Na4IrO4 in its ground state evolves a square-planar coordination for Ir(IV) because of the weak Coulomb repulsion of Ir-5d electrons. In contrast, in its 3d counterpart, Na4CoO4, Co(IV) is in tetrahedral coordination, due to strong electron correlation. Na4IrO4 thus may serve as a simple paradigmatic platform for studying the ramifications of Hubbard type Coulomb interactions on local geometries.

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preprint2015arXiv

New Family of Quantum Spin Hall Insulators in Two-dimensional Transition-Metal Halide with Large Nontrivial Band Gaps

Topological insulators (TIs) are promising for achieving dissipationless transport devices due to the robust gapless states inside the insulating bulk gap. However, currently realized 2D TIs, quantum spin Hall (QSH) insulators, suffer from ultra-high vacuum and extremely low temperature. Thus, seeking for desirable QSH insulators with high feasibility of experimental preparation and large nontrivial gap is of great importance for wide applications in spintronics. Based on the first-principles calculations, we predict a novel family of two-dimensional (2D) QSH insulators in transition-metal halide MX (M = Zr, Hf; X = Cl, Br, and I) monolayers with large nontrivial gaps of 0.12$-$0.4 eV, comparable with bismuth (111) bilayer (0.2 eV), stanene (0.3 eV) and larger than ZrTe$_5$ (0.1 eV) monolayers and graphene-based sandwiched heterstructures (30$-$70 meV). Their corresponding 3D bulk materials are weak topological insulators from stacking QSH layers, and some of bulk compounds have already been synthesized in experiment. The mechanism for 2D QSH effect in this system originates from a novel d$-$d band inversion, which is different from conventional band inversion between s$-$s orbitals, or p$-$p orbitals. The realization of pure layered MX monolayers may be prepared by exfoliation from their 3D bulk phases, thus holding great promise for nanoscale device applications and stimulating further efforts on transition metal-based QSH materials.

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preprint2015arXiv

Orbital ordering of Ir-t2g states in the double perovskite Sr2CeIrO6

The electronic and magnetic properties of monoclinic double perovskite Sr$_2$CeIrO$_6$ were examined based on both experiments and first-principles density functional theory calculations. From the calculations we conclude that low-spin-state Ir$^{4+}$ (5$\textit{d}^5$, S=$\frac{1}{2}$) shows t$_{2g}$ band derived anti-ferro type orbital ordering implying alternating occupations of $\textit{d}_{yz}$ and $\textit{d}_{xz}$ orbitals at the two symmetrically independent Ir sites. The experimentally determined Jahn-Teller type distorted monoclinic structure is consistent with the proposed orbital ordering picture. Surprisingly, the Ir-5$\textit{d}$ orbital magnetic moment was found to be $\approx$ 1.3 times larger than the spin magnetic moment. The experimentally observed AFM-insulating states are consistent with the calculations. Both electron-electron correlation and spin-orbit coupling (SOC) are required to drive the experimentally observed AFM-insulating ground state. This single active site double perovskite provides a rare platform with a prototype geometrically frustrated fcc lattice where among the different degrees of freedom (i.e spin, orbital, and lattice), spin-orbit interaction and Coulomb correlation energy scales compete and interact with each other.

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preprint2015arXiv

Prediction of the Weyl semimetal in the orthorhombic MoTe2

We investigate the orthorhombic phase (Td) of layered transition-metal-dichalcogenide MoTe$_2$ as a Weyl semimetal candidate, which was discovered to be a superconductor in our recent experiment. MoTe$_2$ exhibits four pairs of Weyl points lying slightly ($\sim$ 6 meV) above the Fermi energy in the bulk band structure. Unlike its cousin WTe$_2$, which was predicted to be a type-II Weyl semimetal recently, the spacing between each pair of Weyl points is found to be as large as 4 percent of the reciprocal lattice in MoTe$_2$ (six times larger than that of WTe$_2$). When projected to the surface, Weyl points are connected by Fermi arcs, which can be easily verified by ARPES due to the large Weyl point separation. In addition, we show that the correlation effect or strain can drive MoTe$_2$ from the type-II to type-I Weyl semimetal.

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preprint2015arXiv

Topological nature and the multiple Dirac cones hidden in Bismuth high-Tc superconductors

Recent theoretical studies employing density-functional theory have predicted BaBiO$_{3}$ (when doped with electrons) and YBiO$_{3}$ to become a topological insulator (TI) with a large topological gap (~ 0.7 eV). This, together with the natural stability against surface oxidation, makes the Bismuth-Oxide family of special interest for possible applications in quantum information and spintronics. The central question, we study here, is whether the hole-doped Bismuth Oxides, i.e. Ba$_{1-x}$K$_{x}$BiO$_{3}$ and BaPb$_{1-x}$Bi$_{x}$O$_{3}$, which are "high-Tc" bulk superconducting near 30 K, additionally display in the further vicinity of their Fermi energy $E_{F}$ a topological gap with a Dirac-type of topological surface state. Our electronic structure calculations predict the K-doped family to emerge as a TI, with a topological gap above $E_{F}$. Thus, these compounds can become superconductors with hole-doping and potential TIs with additional electron doping. Furthermore, we predict the Bismuth-Oxide family to contain an additional Dirac cone below $E_{F}$ for further hole doping, which manifests these systems to be candidates for both electron- and hole-doped topological insulators.

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preprint2015arXiv

Topological States on the Gold Surface

Gold surfaces host special electronic states that have been understood as a prototype of Shockley surface states (SSs). These SSs are commonly employed to benchmark the capability of angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling spectroscopy. We find that these Shockley SSs can be reinterpreted as topologically derived surface states (TDSSs) of a topological insulator (TI), a recently discovered quantum state. Based on band structure calculations, the Z2 topological invariant can be well defined to characterize the nontrivial features of gold that we detect by ARPES. The same TDSSs are also recognized on surfaces of other well-known noble metals (e.g., silver, copper, platinum, and palladium). Besides providing a new understanding of noble metal SSs, finding topological states on late transition metals provokes interesting questions on the role of topological effects in surface-related processes, such as adsorption and catalysis.

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preprint2015arXiv

Topological surface states and Fermi arcs of the noncentrosymmetric Weyl semimetals TaAs, TaP, NbAs, and NbP

Very recently the topological Weyl semimetal (WSM) state was predicted in the noncentrosymmetric compounds TaAs, TaP, NbAs, and NbP and soon led to photoemission and transport experiments to verify the presumed topological properties such as Fermi arcs (unclosed Fermi surfaces) and the chiral anomaly. In this work, we have performed fully \textit{ab initio} calculations of the surface band structures of these four WSM materials and revealed the Fermi arcs with spin-momentum-locked spin texture. On the (001) polar surface, the shape of the Fermi surface depends sensitively on the surface terminations (cations or anions), although they exhibit the same topology with arcs. The anion (P or As) terminated surfaces are found to fit recent photoemission measurements well. Such surface potential dependence indicates that the shape of the Fermi surface can be manipulated by depositing guest species (such as K atoms), as we demonstrate. On the polar surface of a WSM without inversion symmetry, Rashba-type spin polarization naturally exists in the surface states and leads to strong spin texture. By tracing the spin polarization of the Fermi surface, we can also distinguish Fermi arcs from trivial Fermi circles. The four compounds NbP, NbAs, TaP, and TaAs present an increasing amplitude of spin-orbit coupling (SOC) in the band structure. By comparing their surface states, we reveal the evolution of topological Fermi arcs from the spin-degenerate Fermi circle to spin-split arcs when the SOC increases from zero to a finite value. Our work will help us understand the complicated surface states of WSMs and allow us to manipulate them, especially for future spin-revolved photoemission and transport experiments.

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preprint2015arXiv

Towards rational design of catalysts supported on a topological insulator substrate

Exotic and robust metallic surface states of topological insulators (TIs) have been expected to provide a promising platform for novel surface chemistry and catalysis. However, it is still an unprecedented field how TIs affect the activity of catalysts. In this work, we study the effects of topological surface states (TSSs) on the activity of transition metal clusters (Au, Ag, Cu, Pt, and Pd), which are supported on a TI Bi2Se3 substrate. It was found the adsorption energy of oxygen on the supported catalysts can be always enhanced due to the TSSs. However, it does not necessarily mean an increase of the activity in catalytic oxidation reaction. Rather, the enhanced adsorption behavior in the presence of TSSs exhibits dual effects, determined by the intrinsic reactivity of these catalysts with oxygen. For the Au case, the activity of catalytic oxidation can be improved because the intrinsic binding between Au and O is relatively weak. In contrast, a negative effect is found for the Pt and Pd clusters since the intrinsic binding of Pt and Pd with oxygen is too strong. We also found that the effect of TSSs on the activity of hydrogen evolution reaction (HER) is quite similar, i.e. the metals with original weak reactivity can gain a positive effect from TSSs. The present work can pave a way for more rational design and selection of catalysts when using TIs as substrates.

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preprint2015arXiv

Two different topological insulator phases in NaBaBi

By breaking the inversion symmetry of the three-dimensional Dirac metal Na$_3$Bi, we realize topological insulator (TI) phases in the known compound NaBaBi using $ab~initio$ calculations. Two distinct TI phases emerge: one phase is due to band inversion between the Bi $p$ and Na $s$ bands, and the other phase (under pressure) is induced by inversion of the Bi $p$ and Ba $d$ bands. Both phases exhibit Dirac-cone-type surface states, but they have opposite spin textures. In the upper cone, a left-handed spin texture exists for the $s$-$p$ inverted phase (similar to a common TI, e.g., Bi$_2$Se$_3$), whereas a right-handed spin texture appears for the $p$-$d$ inverted phase. NaBaBi presents a prototype model of a TI that exhibits different spin textures in the same material. In addition, NaBaBi may exhibit the introduction of correlation effects to the topological state owing to the existence of $d$ states in the band inversion.

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preprint2015arXiv

Two-Dimensional Inversion Asymmetric Topological Insulators in Functionalized III-Bi Bilayers

The search for inversion asymmetric topological insulators (IATIs) persists as an effect for realizing new topological phenomena. However, so for only a few IATIs have been discovered and there is no IATI exhibiting a large band gap exceeding 0.6 eV. Using first-principles calculations, we predict a series of new IATIs in saturated Group III-Bi bilayers. We show that all these IATIs preserve extraordinary large bulk band gaps which are well above room-temperature, allowing for viable applications in room-temperature spintronic devices. More importantly, most of these systems display large bulk band gaps that far exceed 0.6 eV and, part of them even are up to ~1 eV, which are larger than any IATIs ever reported. The nontrivial topological situation in these systems is confirmed by the identified band inversion of the band structures and an explicit demonstration of the topological edge states. Interestingly, the nontrivial band order characteristics are intrinsic to most of these materials and are not subject to spin-orbit coupling. Owning to their asymmetric structures, remarkable Rashba spin splitting is produced in both the valence and conduction bands of these systems. These predictions strongly revive these new systems as excellent candidates for IATI-based novel applications.

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preprint2014arXiv

Ab initio study of topological surface states of strained HgTe

The topological surface states of mercury telluride (HgTe) are studied by ab initio calculations assuming different strains and surface terminations. For the Te-terminated surface, a single Dirac cone exists at the $Γ$ point. The Dirac point shifts up from the bulk valence bands into the energy gap when the substrate-induced strain increases. At the experimental strain value (0.3%), the Dirac point lies slightly below the bulk valence band maximum. A left-handed spin texture was observed in the upper Dirac cone, similar to that of the Bi$_2$Se$_3$-type topological insulator. For the Hg-terminated surface, three Dirac cones appear at three time-reversal-invariant momenta, excluding the $Γ$ point, with nontrivial spin textures.

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preprint2014arXiv

Ab-inito study of low temperature magnetic properties of double perovskite Sr2FeOsO6

Using density-functional theory calculations, we investigated the electronic structure and magnetic exchange interactions of the ordered 3d-5d double perovskite Sr2FeOsO6, which has recently drawn attention for interesting antiferromagnetic transitions. Our study reveals the vital role played by long-range magnetic exchange interactions in this compound. The competition between the ferromagnetic nearest neighbor Os-O-Fe interaction and antiferromagnetic next nearest neighbor Os-O-Fe-O-Os interaction induces strong frustration in this system, which explains the lattice distortion and magnetic phase transitions observed in experiments.

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preprint2014arXiv

Evidence of surface transport and weak anti-localization in single crystal of Bi2Te2Se topological insulator

Topological insulators are known to their metallic surface states, a result of strong-spin-orbital coupling, that show unique surface transport phenomenon. But these surface transports are buried in presence of metallic bulk conduction. We synthesized very high quality Bi$_2$Te$_2$Se single crystals by modified Bridgman method, that possess high bulk resistivity of $>$20~$Ω$cm below 20~K, whereas the bulk is mostly inactive and surface transport dominates. Temperature dependence resistivity follows the activation law like a gap semiconductor in temperature range 20-300~K. We designed a special measurement geometry, which aims to extract the surface transport from the bulk. This special geometry is applied to measure the resistance and found that Bi$_2$Te$_2$Se single crystal exhibits a cross over from bulk to surface conduction at 20~K. Simultaneously, the material also shows strong evidence of weak anti-localization in magneto-transport due to the protection against scattering by conducting surface states. This novel simple geometry is an easy route to find the evidence of surface transport in topological insulators, which are the promising materials for future spintronic applications.

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preprint2014arXiv

Half-Heusler topological insulators

Ternary semiconducting or metallic half-Heusler compounds with an atomic composition 1:1:1 are widely studied for their flexible electronic properties and functionalities. Recently, a new material property of half-Heusler compounds was predicted based on electronic structure calculations: the topological insulator. In topological insulators, the metallic surface states are protected from impurity backscattering due to spin-momentum locking. This opens up new perspectives in engineering multifunctional materials. In this article, we introduce half Heusler materials from the crystallographic and electronic structure point of view. We present an effective model Hamiltonian from which the topological state can be derived, notably from a non-trivial inverted band structure. We discuss general implications of the inverted band structure with a focus on the detection of the topological surface states in experiments by reviewing several exemplary materials. Special attention is given to superconducting half-Heusler materials, which have attracted ample attention as a platform for non-centrosymmetric and topological superconductivity.

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preprint2014arXiv

Lattice-site-specific spin-dynamics in double perovskite Sr2CoOsO6

We have studied the magnetic properties and spin-dynamics of the structurally-ordered double perovskite Sr$_2$CoOsO$_6$. Our neutron diffraction, muon spin relaxation and ac-susceptibility measurements reveal two antiferromagnetic (AFM) phases on cooling from room temperature down to 2 K. In the first AFM phase, with transition temperature $T_{\mathrm{N}}=108$ K, cobalt (3$d^7$, $S=3/2$) and osmium (5$d^2$, $S=1$) moments fluctuate dynamically, while their \textit{average} effective moments undergo long-range order. In the second AFM phase with $T_{\mathrm{N}}=67$ K, cobalt moments first become frozen and induce a noncollinear spin-canted AFM state, while dynamically fluctuating osmium moments are later frozen into a randomly canted state at $T\approx 5$ K. Our \textit{ab initio} calculations indicate that the effective exchange coupling between cobalt and osmium sites is rather weak, so that cobalt and osmium sublattices exhibit different ground states and spin-dynamics, making Sr$_2$CoOsO$_6$ distinct from previously reported double-perovskite compounds.

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preprint2014arXiv

New Family of Robust 2D Topological Insulators in van der Waals Heterostructures

We predict a new family of robust two-dimensional (2D) topological insulators in van der Waals heterostructures comprising graphene and chalcogenides BiTeX (X=Cl, Br and I). The layered structures of both constituent materials produce a naturally smooth interface that is conducive to proximity induced new topological states. First principles calculations reveal intrinsic topologically nontrivial bulk energy gaps as large as 70-80 meV, which can be further enhanced up to 120 meV by compression. The strong spin-orbit coupling in BiTeX has a significant influence on the graphene Dirac states, resulting in the topologically nontrivial band structure, which is confirmed by calculated nontrivial Z2 index and an explicit demonstration of metallic edge states. Such heterostructures offer an unique Dirac transport system that combines the 2D Dirac states from graphene and 1D Dirac edge states from the topological insulator, and it offers new ideas for innovative device designs.

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preprint2014arXiv

Opening Band Gap without Breaking Lattice Symmetry: A New Route toward Robust Graphene-Based Nanoelectronics

Developing graphene-based nanoelectronics hinges on opening a band gap in the electronic structure of graphene, which is commonly achieved by breaking the inversion symmetry of the graphene lattice via an electric field (gate bias) or asymmetric doping of graphene layers. Here we introduce a new design strategy that places a bilayer graphene sheet sandwiched between two cladding layers of materials that possess strong spin-orbit coupling (e.g., Bi2Te3). Our ab initio and tight-binding calculations show that proximity enhanced spin-orbit coupling effect opens a large (44 meV) band gap in bilayer graphene without breaking its lattice symmetry, and the band gap can be effectively tuned by interlayer stacking pattern and significantly enhanced by interlayer compression. The feasibility of this quantum-well structure is demonstrated by recent experimental realization of high-quality heterojunctions between graphene and Bi2Te3, and this design also conforms to existing fabrication techniques in the semiconductor industry. The proposed quantum-well structure is expected to be especially robust since it does not require an external power supply to open and maintain a band gap, and the cladding layers provide protection against environmental degradation of the graphene layer in its device applications.

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preprint2014arXiv

Prediction of Near-Room-Temperature Quantum Anomalous Hall Effect on Honeycomb Materials

Recently, this long-sought quantum anomalous Hall effect was realized in the magnetic topological insulator. However, the requirement of an extremely low temperature (approximately 30 mK) hinders realistic applications. Based on \textit{ab-initio} band structure calculations, we propose a quantum anomalous Hall platform with a large energy gap of 0.34 and 0.06 eV on honeycomb lattices comprised of Sn and Ge, respectively. The ferromagnetic order forms in one sublattice of the honeycomb structure by controlling the surface functionalization rather than dilute magnetic doping, which is expected to be visualized by spin polarized STM in experiment. Strong coupling between the inherent QSH state and ferromagnetism results in considerable exchange splitting and consequently an FM insulator with a large energy gap. The estimated mean-field Curie temperature is 243 and 509 K for Sn and Ge lattices, respectively. The large energy gap and high Curie temperature indicate the feasibility of the QAH effect in the near-room-temperature and even room-temperature regions.

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preprint2014arXiv

Spin Texture and Mirror Chern number in Hg-Based Chalcogenides

The unique feature of surface states in topological insulators is the so-called "spin-momentum locking", which means that electron spin is oriented along a fixed direction for a given momentum and forms a texture in the momentum space. In this work, we study spin textures of two typical topological insulators in Hg-Based Chalcogenides, namely HgTe and HgS, based on both the first principles calculation and the eight band Kane model. We find opposite helicities of spin textures between these two materials, originating from the opposite signs of spin-orbit couplings. Furthermore, we reveal that different mirror Chern numbers between HgTe and HgS characterize different topological natures of the systems with opposite spin textures and guarantee the existence of gapless interface states.

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preprint2014arXiv

Stacking-dependent energetics and electronic structure of ultrathin polymorphic V$_2$VI$_3$ topological insulator nanofilms

Topological insulators represent a paradigm shift in surface physics. The most extensively studied Bi$_2$Se$_3$-type topological insulators exhibit layered structures, wherein neighboring layers are weakly bonded by van der Waals interactions. Using first principles density-functional theory calculations, we investigate the impact of the stacking sequence on the energetics and band structure properties of three polymorphs of Bi$_2$Se$_3$, Bi$_2$Te$_3$, and Sb$_2$Te$_3$. Considering their ultrathin films up to 6 nm as a function of its layer thickness, the overall dispersion of the band structure is found to be insensitive to the stacking sequence, while the band gap is highly sensitive, which may also affect the critical thickness for the onset of the topologically nontrivial phase. Our calculations are consistent with both experimental and theoretical results, where available. We further investigate tribological layer slippage, where we find a relatively low energy barrier between two of the considered structures. Both the stacking-dependent band gap and low slippage energy barriers, suggest that polymorphic stacking modification may offer an alternative route for controlling the properties of this new state of matter.

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preprint2014arXiv

Theoretical search for half-Heusler topological insulators

We have performed ab-initio band structure calculations on more than two thousand half-Heusler compounds in order to search for new candidates for topological insulators. Herein, LiAuS and NaAuS are found to be the strongest topological insulators with the bulk band gap of 0.20 and 0.19 eV, respectively, different from the zero band gap feature reported in other Heusler topological insulators. Due to the inversion asymmetry of the Heusler structure, their topological surface states on the top and bottom surfaces exhibit p-type and n-type carriers, respectively. Thus, these materials may serve as an ideal platform for the realization of topological magneto-electric effects as polar topological insulators. Moreover, these topological surface states exhibit the right-hand spin-texture in the upper Dirac cone, which distinguish them from currently known topological insulator materials. Their topological nontrivial character remains robust against in-plane strains, which makes them suitable for epitaxial growth of films.

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preprint2013arXiv

A large energy-gap oxide topological insulator based on the superconductor BaBiO3

Mixed-valent perovskite oxides based on BaBiO3 (BBO) are, like cuperates, well-known high-Tc superconductors. Recent ab inito calculations have assigned the high-Tc superconductivity to a correlation-enhanced electron--phonon coupling mechanism, stimulating the prediction and synthesis of new superconductor candidates among mixed-valent thallium perovskites. Existing superconductivity has meant that research has mainly focused on hole-doped compounds, leaving electron-doped compounds relatively unexplored. Here we demonstrate through ab inito calculations that BBO emerges as a topological insulator (TI) in the electron-doped region, where the spin-orbit coupling (SOC) effect is significant. BBO exhibits the largest topological energy gap of 0.7 eV among currently known TI materials, inside which Dirac-type topological surface states (TSSs) exit. As the first oxide TI, BBO is naturally stable against surface oxidization and degrading, different from chalcoginide TIs. An extra advantage of BBO lies in its ability to serve an interface between the TSSs and the superconductor for the realization of Majorana Fermions.

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preprint2013arXiv

Direct observation of band bending in topological insulator Bi2Se3

The surface band bending tunes considerably the surface band structures and transport properties in topological insulators. We present a direct measurement of the band bending on the Bi2Se3 by using the bulk sensitive angular-resolved hard x-ray photospectroscopy (HAXPES). We tracked the depth dependence of the energy shift of Bi and Se core states. We estimate that the band bending extends up to about 20 nm into the bulk with an amplitude of 0.23--0.26 eV, consistent with profiles previously deduced from the binding energies of surface states in this material.

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preprint2013arXiv

Graphene-based topological insulator with an intrinsic bulk band gap above room temperature

Topological insulators (TIs) represent a new quantum state of matter characterized by robust gapless states inside the insulating bulk gap. The metallic edge states of a two-dimensional (2D) TI, known as quantum spin Hall (QSH) effect, are immune to backscattering and carry fully spin-polarized dissipationless currents. However, existing 2D TIs realized in HgTe and InAs/GaSb suffer from small bulk gaps (<10 meV) well below room temperature, thus limiting their application in electronic and spintronic devices. Here, we report a new 2D TI comprising a graphene layer sandwiched between two Bi2Se3 slabs that exhibits a large intrinsic bulk band gap of 30 to 50 meV, making it viable for room-temperature applications. Distinct from previous strategies for enhancing the intrinsic spin-orbit coupling effect of the graphene lattice, the present graphene-based TI operates on a new mechanism of strong inversion between graphene Dirac bands and Bi2Se3 conduction bands. Strain engineering leads to effective control and substantial enhancement of the bulk gap. Recently reported synthesis of smooth graphene/Bi2Se3 interfaces demonstrates feasibility of experimental realization of this new 2D TI structure, which holds great promise for nanoscale device applications.

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preprint2013arXiv

Large-gap quantum spin Hall insulators in tin films

The search of large-gap quantum spin Hall (QSH) insulators and effective approaches to tune QSH states is important for both fundamental and practical interests. Based on first-principles calculations we find two-dimensional tin films are QSH insulators with sizable bulk gaps of 0.3 eV, sufficiently large for practical applications at room temperature. These QSH states can be effectively tuned by chemical functionalization and by external strain. The mechanism for the QSH effect in this system is band inversion at the Γpoint, similar to the case of HgTe quantum well. With surface doping of magnetic elements, the quantum anomalous Hall effect could also be realized.

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preprint2013arXiv

Lattice Instability and Competing Spin Structures in the Double Perovskite Insulator Sr2FeOsO6

The semiconductor Sr2FeOsO6, depending on temperature, adopts two types of spin structures that differ in the spin sequence of ferrimagnetic iron - osmium layers along the tetragonal c-axis. Neutron powder diffraction experiments, 57Fe Mössbauer spectra, and density-functional theory calculations suggest that this behavior arises because a lattice instability resulting in alternating iron-osmium distances fine-tunes the balance of competing exchange interactions. Thus, Sr2FeOsO6 is an example for a double perovskite, in which the electronic phases are controlled by the interplay of spin, orbital, and lattice degrees of freedom.

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preprint2013arXiv

Synthesis, Crystal Structure and Physical Properties of Sr2FeOsO6

In the exploration of new osmium based double perovskites, Sr2FeOsO6 is a new insertion in the existing family. The polycrystalline compound has been prepared by solid state synthesis from the respective binary oxides. PXRD analysis shows the structure is pseudo-cubic at room temperature, whereas low-temperature synchrotron data refinements reveal the structure to be tetragonal, space group I4/m. Heat capacity and magnetic measurements of Sr2FeOsO6 indicated the presence of two magnetic phase transitions at T1 = 140 K and T2 = 67 K. Band structure calculations showed the compound as a narrow energy gap semiconductor, which supports the experimental results obtained from the resistivity measurements. The present study documents significant structural and electronic effects of substituting Fe3+ for Cr3+ ion in Sr2CrOsO6.

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preprint2013arXiv

Topological Hamiltonian as an Exact Tool for Topological Invariants

We propose the concept of `topological Hamiltonian' for topological insulators and superconductors in interacting systems. The eigenvalues of topological Hamiltonian are significantly different from the physical energy spectra, but we show that topological Hamiltonian contains the information of gapless surface states, therefore it is an exact tool for topological invariants.

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preprint2013arXiv

Topological superconductivity at the edge of transition metal dichalcogenides

Time-reversal breaking topological superconductors are new states of matter which can support Majorana zero modes at the edge. In this paper, we propose a new realization of one-dimensional topological superconductivity and Majorana zero modes. The proposed system consists of a monolayer of transition metal dichalcogenides MX2 (M=Mo, W; X=S, Se) on top of a superconducting substrate. Based on first-principles calculations, we show that a zigzag edge of the monolayer MX2 terminated by metal atom M has edge states with strong spin-orbit coupling and spontaneous magnetization. By proximity coupling with a superconducting substrate, topological superconductivity can be induced at such an edge. We propose NbS2 as a natural choice of substrate, and estimate the proximity induced superconducting gap based on first-principles calculation and low energy effective model. As an experimental consequence of our theory, we predict that Majorana zero modes can be detected at the 120 degree corner of a MX2 flake in proximity with a superconducting substrate.

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preprint2013arXiv

Weak topological insulators induced by the inter-layer coupling: A first-principles study of stacked Bi2TeI

Based on first-principles calculations, we predict Bi2TeI, a stoichiometric compound synthesized, to be a weak topological insulator (TI) in layered subvalent bismuth telluroiodides. Within a bulk energy gap of 80 meV, two Dirac-cone-like topological surface states exist on the side surface perpendicular to BiTeI layer plane. These Dirac cones are relatively isotropic due to the strong inter-layer coupling, distinguished from those of previously reported weak TI candidates. Moreover, with chemically stable cladding layers, the BiTeI-Bi2-BiTeI sandwiched structure is a robust quantum spin Hall system, which can be obtained by simply cleaving the bulk Bi2TeI.

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preprint2012arXiv

First-principles study of the structural stability of Mn3Z (Z=Ga, Sn and Ge) Heusler compounds

We investigate the structural stability and magnetic properties of cubic, tetragonal and hexagonal phases of Mn3Z (Z=Ga, Sn and Ge) Heusler compounds using first-principles density-functional theory. We propose that the cubic phase plays an important role as an intermediate state in the phase transition from the hexagonal to the tetragonal phases. Consequently, Mn3Ga and Mn3Ge behave differently from Mn3Sn, because the relative energies of the cubic and hexagonal phases are different. This result agrees with experimental observations from these three compounds. The weak ferromagnetism of the hexagonal phase and the perpendicular magnetocrystalline anisotropy of the tetragonal phase obtained in our calculations are also consistent with experiment.

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preprint2012arXiv

Prediction of weak topological insulators in layered semiconductors

We report the discovery of weak topological insulators by ab initio calculations in a honeycomb lattice. We propose a structure with an odd number of layers in the primitive unit-cell as a prerequisite for forming weak topological insulators. Here, the single-layered KHgSb is the most suitable candidate for its large bulk energy gap of 0.24 eV. Its side surface hosts metallic surface states, forming two anisotropic Dirac cones. Though the stacking of even-layered structures leads to trivial insulators, the structures can host a quantum spin Hall layer with a large bulk gap, if an additional single layer exists as a stacking fault in the crystal. The reported honeycomb compounds can serve as prototypes to aid in the finding of new weak topological insulators in layered small-gap semiconductors.

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preprint2012arXiv

Topological insulators and thermoelectric materials

Topological insulators (TIs) are a new quantum state of matter which have gapless surface states inside the bulk energy gap. Starting with the discovery of two dimensional TIs, the HgTe-based quantum wells, many new topological materials have been theoretically predicted and experimentally observed. Currently known TI materials can possibly be classified into two families, the HgTe family and the Bi2Se family. The signatures found in the electronic structure of a TI also cause these materials to be excellent thermoelectric materials. On the other hand, excellent thermoelectric materials can be also topologically trivial. Here we present a short introduction to topological insulators and thermoelectrics, and give examples of compound classes were both good thermoelectric properties and topological insulators can be found.

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preprint2012arXiv

Topological surface states of Bi2Se3 with the coexistence of Se vacancies

Although topological surface states are known to be robust against non-magnetic surface perturbations, their band dispersions and spatial distributions are still sensitive to the surface defects. Take Bi2Se3 as an example, we demonstrated that Se vacancies modifies the surface band structures considerably. When large numbers of Se vacancies exist on the surface, topological surface states may sink down from the first to second quintuple layer and get separated from the vacancies. We simulated STM images to distinguish the surfaces with Se- and Bi-terminations.

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preprint2011arXiv

Gas Doping on the Topological Insulator Bi2Se3 Surface

Gas molecule doping on the topological insulator Bi2 Se3 surface with existing Se vacancies is investigated using first-principles calculations. Consistent with experiments, NO2 and O2 are found to occupy the Se vacancy sites, remove vacancy-doped electrons and restore the band structure of a perfect surface. In contrast, NO and H2 do not favour passivation of such vacancies. Interestingly we have revealed a NO2 dissociation process that can well explain the speculative introduced "photon-doping" effect reported by recent experiments. Experimental strategies to validate this mechanism are presented. The choice and the effect of different passivators are discussed. This step paves the way for the usage of such materials in device applications utilizing robust topological surface states.

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preprint2011arXiv

Topological insulators in filled skutterudites

We propose new topological insulators in cerium filled skutterudite (FS) compounds based on ab initio calculations. We find that two compounds CeOs4As12 and CeOs4Sb12 are zero gap materials with band inversion between Os-d and Ce-f orbitals, which are thus parent compounds of two and three-dimensional topological insulators just like bulk HgTe. At low temperature, both compounds become topological Kondo insulators, which are Kondo insulators in the bulk, but have robust Dirac surface states on the boundary. This new family of topological insulators has two advantages compared to previous ones. First, they can have good proximity effect with other superconducting FS compounds to realize Majarona fermions. Second, the antiferromagnetism of CeOs4Sb12 at low temperature provides a way to realize the massive Dirac fermion with novel topological phenomena.

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preprint2010arXiv

Theoretical prediction of topological insulator in ternary rare earth chalcogenides

A new class of three-dimensional topological insulator, ternary rare earth chalcogenides, is theoretically investigated with ab initio calculations. Based on both bulk band structure analysis and the direct calculation of topological surface states, we demonstrate that LaBiTe3 is a topological insulator. La can be substituted by other rare earth elements, which provide candidates for novel topological states such as quantum anomalous Hall insulator, axionic insulator and topological Kondo insulator. Moreover, YBiTe3 and YSbTe3 are found to be normal insulators. They can be used as protecting barrier materials for both LaBiTe3 and Bi2Te3 families of topological insulators for their well matched lattice constants and chemical composition.

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preprint2010arXiv

Theoretical Prediction of Topological Insulators in Thallium-based III-V-VI$_2$ Ternary Chalcogenides

We predict a new class of three dimensional topological insulators in thallium-based III-V-VI$_2$ ternary chalcogenides, including TlBiQ$_2$ and TlSbQ$_2$ (Q = Te, Se and S). These topological insulators have robust and simple surface states consisting of a single Dirac cone at the $Γ$ point. The mechanism for topological insulating behavior is elucidated using both first principle calculations and effective field theory models. Remarkably, one topological insulator in this class, TlBiTe$_2$ is also a superconductor when doped with $p$-type carriers. We discuss the possibility that this material could be a topological superconductor. Another material TlSbS$_2$ is on the border between topological insulator and trivial insulator phases, in which a topological phase transition can be driven by pressure.

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preprint2010arXiv

Topological Insulators in Ternary Compounds with a Honeycomb Lattice

One of the most exciting subjects in solid state physics is a single layer of graphite which exhibits a variety of unconventional novel properties. The key feature of its electronic structure are linear dispersive bands which cross in a single point at the Fermi energy. This so-called Dirac cone is closely related to the surface states of the recently discovered topological insulators. The ternary compounds, such as LiAuSe and KHgSb with a honeycomb structure of their Au-Se and Hg-Sb layers feature band inversion very similar to HgTe which is a strong precondition for existence of the topological surface states. In contrast to graphene with two Dirac cones at K and K' points, these materials exhibit the surface states formed by only a single Dirac cone at the Γ-point together with the small direct band gap opened by a strong spin-orbit coupling (SOC) in the bulk. These materials are centro-symmetric, therefore, it is possible to determine the parity of their wave functions, and hence, their topological character. Surprisingly, the compound KHgSb with the strong SOC is topologically trivial, whereas LiAuSe is found to be a topological non-trivial insulator.

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preprint2009arXiv

Oscillatory crossover from two dimensional to three dimensional topological insulators

We investigate the crossover regime from three dimensional topological insulators $Bi_2Te_3$ and $Bi_2Se_3$ to two dimensional topological insulators with quantum spin Hall effect when the layer thickness is reduced. Using both analytical models and first-principles calculations, we find that the crossover occurs in an oscillatory fashion as a function of the layer thickness, alternating between topologically trivial and non-trivial two dimensional behavior.

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