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Researcher profile

Stephan Lany

Stephan Lany contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.dis-nncond-mat.str-elphysics.comp-ph

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Published work

11 published item(s)

preprint2022arXiv

Band gap analysis and carrier localization in cation-disordered ZnGeN$_2$

Cation site disorder provides a degree of freedom in the growth of ternary nitrides for tuning the technologically relevant properties of a material system. For example, the band gap of ZnGeN$_2$ changes when the ordering of the structure deviates from that of its ground state. By combining the perspectives of carrier localization and defect states, we analyze the impact of different degrees of disordering on electronic properties in ZnGeN$_2$, addressing a gap in current studies which focus on dilute or fully disordered systems. The present study demonstrates changes in the density of states and localization of carriers in ZnGeN$_2$ calculated using band gap-corrected density functional theory and hybrid calculations on partially disordered supercells generated using the Monte Carlo method. We use localization and density of states to discuss the ill-defined nature of a band gap in a disordered material, comparing multiple definitions of the energy gap in the context of theory and experiment. Decreasing the order parameter results in a large reduction of the band gap in disordered cases. The reduction in band gap is due in part to isolated, localized states that form above the valence band continuum and are associated with nitrogen coordinated by more zinc than germanium. The prevalence of defect states in all but the perfectly ordered structure creates challenges for incorporating disordered ZnGeN$_2$ into optical devices, but the localization associated with these defects provides insight into mechanisms of electron/hole recombination in the material.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Computational Discovery of Two-Dimensional Rare-Earth Iodides: Promising Ferrovalley Materials for Valleytronics

Two-dimensional Ferrovalley materials with intrinsic valley polarization are rare but highly promising for valley-based nonvolatile random access memory and valley filter. Using Kinetically Limited Minimization (KLM), an unconstrained crystal structure prediction algorithm, and prototype sampling based on first-principles calculations, we have discovered 17 new Ferrovalley materials (rare-earth iodides RI$_2$, where R is a rare-earth element belonging to Sc, Y, or La-Lu, and I is Iodine). The rare-earth iodides are layered and demonstrate 2H, 1T, or 1T$_d$ phase as the ground-state in bulk, analogous to transition metal dichalcogenides (TMDCs). The calculated exfoliation energy of monolayers is comparable to that of graphene and TMDCs, suggesting possible experimental synthesis. The monolayers in the 2H phase exhibit two-dimensional ferromagnetism due to unpaired electrons in $d$ and $f$ orbitals. Throughout the rare-earth series, $d$ bands show valley polarization at $K$ and $\bar{K}$ points in the Brillouin zone near the Fermi level. Due to strong magnetic exchange interaction and spin-orbit coupling, large intrinsic valley polarization in the range of 15-143 meV without external stimuli is observed, which can be tuned and enhanced by applying a biaxial strain. These valleys can selectively be probed and manipulated for information storage and processing, potentially offering superior performance beyond conventional electronics and spintronics. We further show that the 2H ferromagnetic phase of RI$_2$ monolayers possesses non-zero Berry curvature and exhibits the valley Hall effect with considerable anomalous Hall conductivity. Our work will incite exploratory synthesis of the predicted Ferrovalley materials and their application in valleytronics and beyond.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

The role of disorder in the synthesis of metastable zinc zirconium nitrides

In materials science, it is often assumed that ground state crystal structures predicted by density functional theory are the easiest polymorphs to synthesize. Ternary nitride materials, with many possible metastable polymorphs, provide a rich materials space to study what influences thermodynamic stability and polymorph synthesizability. For example, ZnZrN2 is theoretically predicted at zero Kelvin to have an unusual layered "wurtsalt" ground state crystal structure with compelling optoelectronic properties, but it is unknown whether this structure can be realized experimentally under practical synthesis conditions. Here, we use combinatorial sputtering to synthesize hundreds of ZnxZr1-xNy thin film samples, and find metastable rocksalt-derived or boron-nitride-derived structures rather than the predicted wurtsalt structure. Using a statistical polymorph sampler approach, it is demonstrated that although rocksalt is the least stable polymorph at zero Kelvin, it becomes the most stable polymorph at high effective temperatures similar to those achieved using this sputter deposition method, and thus corroborates experimental results. Additional calculations show that this destabilization of the wurtsalt polymorph is due to configurational entropic and enthalpic effects, and that vibrational contributions are negligible. Specifically, rocksalt- and boron-nitride-derived structures become the most stable polymorphs in the presence of disorder because of higher tolerances to cation cross-substitution and off-stoichiometry than the wurtsalt structure. This understanding of the role of disorder tolerance in the synthesis of competing polymorphs can enable more accurate predictions of synthesizable crystal structures and their achievable material properties.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Pathway to oxide photovoltaics via band-structure engineering of SnO

The prospects of scaling current photovoltaic technologies to terawatt levels remain uncertain. All-oxide photovoltaics could open rapidly scalable manufacturing routes, if only oxide materials with suitable electronic and optical properties were developed. A potential candidate material is tin monoxide (SnO), which has exceptional doping and transport properties among oxides, but suffers from a low adsorption coefficient due to its strongly indirect band gap. Here, we address this shortcoming of SnO by band-structure engineering through isovalent but heterostructural alloying with divalent cations (Mg, Ca, Sr, Zn). Using first-principles calculations, we show that suitable band gaps and optical properties close to that of direct-gap semiconductors are achievable in such SnO based alloys. Due to the defect tolerant electronic structure of SnO, the dispersive band-structure features and comparatively small effective masses are preserved in the alloys. Initial Sn1-xZnxO thin films deposited by sputtering exhibit crystal structure and optical properties in accord with the theoretical predictions, which confirms the feasibility of the alloying approach. Thus, the implications of this work are important not only for terawatt scale photovoltaics, but also for other large-scale energy technologies where defect-tolerant semiconductors with high quality electronic properties are required.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Synthesis of a mixed-valent tin nitride and considerations of its possible crystal structures

Recent advances in theoretical structure prediction methods and high-throughput computational techniques are revolutionizing experimental discovery of the thermodynamically stable inorganic materials. Metastable materials represent a new frontier for studies, since even simple binary non ground state compounds of common elements may be awaiting discovery. However, there are significant research challenges related to non-equilibrium thin film synthesis and crystal structure predictions, such as small strained crystals in the experimental samples and energy minimization based theoretical algorithms. Here we report on experimental synthesis and characterization, as well as theoretical first-principles calculations of a previously unreported mixed-valent binary tin nitride. Thin film experiments indicate that this novel material is N-deficient SnN with tin in the mixed II/IV valence state and a small low-symmetry unit cell. Theoretical calculations suggest that the most likely crystal structure has the space group 2 (SG2) related to the distorted delafossite (SG166), which is nearly 0.1 eV/atom above the ground state SnN polymorph. This observation is rationalized by the structural similarity of the SnN distorted delafossite to the chemically related Sn3N4 spinel compound, which provides a fresh scientific insight into the reasons for growth of polymorphs of the metastable material. In addition to reporting on the discovery of the simple binary SnN compound, this paper illustrates a possible way of combining a wide range of advanced characterization techniques with the first-principle property calculation methods, to elucidate the most likely crystal structure of the previously unreported metastable materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Understanding and Control of Bipolar Doping in Copper Nitride

Semiconductor materials that can be doped both n-type and p-type are desirable for diode-based applications and transistor technology. Copper nitride (Cu3N) is a metastable semiconductor with a solar-relevant bandgap that has been reported to exhibit bipolar doping behavior. However, deeper understanding and better control of the mechanism behind this behavior in Cu3N is currently lacking in the literature. In this work, we use combinatorial growth with a temperature gradient to demonstrate both conduction types of phase-pure, sputter-deposited Cu3N thin films. Room temperature Hall effect and Seebeck effect measurements show n-type Cu3N with 10^17 electrons/cm^3 for low growth temperature (~35 degrees C) and p-type with 10^15-10^16 holes/cm^3 for elevated growth temperatures (50-120 degrees C). Mobility for both types of Cu3N was ~0.1-1 cm^2/Vs. Additionally, temperature- dependent Hall effect measurements indicate that ionized defects are an important scattering mechanism in p-type films. By combining X-ray absorption spectroscopy and first-principles defect theory, we determined that V_Cu defects form preferentially in p-type Cu3N while Cu_i defects form preferentially in n-type Cu3N. Based on these theoretical and experimental results, we propose a kinetic defect formation mechanism for bipolar doping in Cu3N, that is also supported by positron annihilation experiments. Overall, the results of this work highlight the importance of kinetic processes in the defect physics of metastable materials, and provide a framework that can be applied when considering the properties of such materials in general.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Accelerated development of CuSbS2 thin film photovoltaic device prototypes

Development of alternative thin film photovoltaic technologies is an important research topic due to the potential for low-cost, large-scale fabrication of high-efficiency solar cells. Despite the large number of promising alternative absorbers and corresponding contacts, the rate of progress is limited by complications that arise during solar cell fabrication. One potential solution to this problem is the high-throughput combinatorial method, which has been extensively used for research and development of individual absorber and contact materials. Here, we demonstrate an accelerated approach to development of thin film photovoltaic device prototypes based on the novel CuSbS2 absorber, using the device architecture employed for CuInxGa(1-x)Se2 (CIGS). The newly developed three-stage, self-regulated CuSbS2 growth process enables the study of PV device performance trends as a function of phase purity, crystallographic orientation, layer thickness of the absorber, and numerous back contacts. This exploration results in initial CuSbS2 device prototypes with ~1% conversion efficiency; currently limited by low short-circuit current due to poor collection of photoexcited electrons, and a small open-circuit voltage due to a cliff-type conduction band offset at the CuSbS2/CdS interface (suggested by first-principles calculations). Overall, these results illustrate the potential of combinatorial methods to accelerate the development of thin film photovoltaic devices with novel absorbers.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

CuSbSe2 photovoltaic devices with 3% efficiency

Recent technical and commercial successes of existing thin film solar cell technologies motivates exploration of next-generation photovoltaic (PV) absorber materials. Of particular scientific interest are compounds like CuSbSe$_2$, which do not have the conventional tetrahedral semiconductor bonding. Here, we demonstrate 1.5 μm thick CuSbSe$_2$ PV prototypes prepared at 380-410°C by a self-regulated sputtering process using the conventional substrate device architecture. The p-type CuSbSe$_2$ absorber has a 1.1 eV optical absorption onset, ~$10^{5}$ cm$^{-1}$ absorption coefficient at 0.3 eV above the onset, and a hole concentration of ~10$^{17}$ cm$^{-3}$. The promising >3% energy conversion efficiency (Jsc = 20 mA/cm$^2$, FF = 0.44, Voc = 0.35 V) in these initial devices is limited by bulk recombination that limits photocurrent, device engineering issues that affect fill factor, and a photovoltage deficit that likely results from the non-ideal CuSbSe2/CdS band offset.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Effects of disorder on carrier transport in Cu$_2$SnS$_3$

In recent years, further improvements in the efficiency of Cu$_2$ZnSn(S,Se)$_4$ photovoltaic devices have been hampered due to several materials issues, including cation disorder. Cu$_2$SnS$_3$ is a promising new absorber material that has attracted significant interest in recent years. However, similar to CZTS, Cu$_2$SnS$_3$ displays cation disorder. In this work, we develop synthetic techniques to control the disorder in Cu$_2$SnS$_3$ thin films. By manipulating the disorder in this material, we observe crystal structure changes and detect improvements in the majority carrier (hole) transport. However, when the minority carrier (electron) transport was investigated using optical pump terahertz probe spectroscopy, minimal differences were observed between the ordered and disordered Cu$_2$SnS$_3$. By combining these results with first-principles and Monte Carlo theoretical calculations, we are able to conclude that even ostensibly "ordered" Cu$_2$SnS$_3$ displays minority carrier transport properties corresponding to the disordered structure. The presence of extended planar defects in all samples, observed in TEM imaging, suggests that disorder is present even when it is not detectable using traditional structural characterization methods. The results of this study highlight some of the challenges to the further improvement of Cu$_2$SnS$_3$-based photovoltaics, and have implications for other disordered multinary semiconductors such as CZTS.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electronic band structure and ambipolar electrical properties of Cu2O based semiconductor alloys

Tuning the opto-electronic properties through alloying is essential for semiconductor technology. Currently, mostly isovalent and isostructural alloys are used (e.g., group-IV and III-V), but a vast and unexplored space of novel functional materials is conceivable when considering more complex alloys by mixing aliovalent and heterostructural constituents. The real challenge lies in the quantitative property prediction for such complex alloys to guide their experimental exploration. We developed an approach to predict compositional dependence of both band-structure and electrical properties from ab-initio calculations by extending conventional dilute defect model to higher (alloy) concentrations. Considering alloying of aliovalent (Mg, Zn, Cd) cations and isovalent anions (S, Se) into Cu2O, we predict tunability of band-gap energies and doping levels over a wide range, including the type conversion from p- to n-type. Initial synthesis and characterization of Zn and Se substituted Cu2O support the defect model, suggesting these alloys as promising novel oxide semiconductor materials.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Manybody GW calculation of the oxygen vacancy in ZnO

Density functional theory (DFT) calculations of defect levels in semiconductors based on approximate functionals are subject to considerable uncertainties, in particular due to inaccurate band gap energies. Testing previous correction methods by many-body GW calculations for the O vacancy in ZnO, we find that: (i) The GW quasi-particle shifts of the VO defect states increase the spitting between occupied and unoccupied states due to self-interaction correction, and do not reflect the conduction versus valence band character. (ii) The GW quasi-particle energies of charged defect states require important corrections for supercell finite size effects. (iii) The GW results are robust with respect to the choice of the underlying DFT or hybrid-DFT functional, and the (2+/0) donor transition lies below mid-gap, close to our previous prediction employing rigid band edge shifts.

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