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Pawel Zawadzki

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Published work

4 published item(s)

preprint2022arXiv

Random Similarity Forests

The wealth of data being gathered about humans and their surroundings drives new machine learning applications in various fields. Consequently, more and more often, classifiers are trained using not only numerical data but also complex data objects. For example, multi-omics analyses attempt to combine numerical descriptions with distributions, time series data, discrete sequences, and graphs. Such integration of data from different domains requires either omitting some of the data, creating separate models for different formats, or simplifying some of the data to adhere to a shared scale and format, all of which can hinder predictive performance. In this paper, we propose a classification method capable of handling datasets with features of arbitrary data types while retaining each feature's characteristic. The proposed algorithm, called Random Similarity Forest, uses multiple domain-specific distance measures to combine the predictive performance of Random Forests with the flexibility of Similarity Forests. We show that Random Similarity Forests are on par with Random Forests on numerical data and outperform them on datasets from complex or mixed data domains. Our results highlight the applicability of Random Similarity Forests to noisy, multi-source datasets that are becoming ubiquitous in high-impact life science projects.

preprint2015arXiv

Accelerated development of CuSbS2 thin film photovoltaic device prototypes

Development of alternative thin film photovoltaic technologies is an important research topic due to the potential for low-cost, large-scale fabrication of high-efficiency solar cells. Despite the large number of promising alternative absorbers and corresponding contacts, the rate of progress is limited by complications that arise during solar cell fabrication. One potential solution to this problem is the high-throughput combinatorial method, which has been extensively used for research and development of individual absorber and contact materials. Here, we demonstrate an accelerated approach to development of thin film photovoltaic device prototypes based on the novel CuSbS2 absorber, using the device architecture employed for CuInxGa(1-x)Se2 (CIGS). The newly developed three-stage, self-regulated CuSbS2 growth process enables the study of PV device performance trends as a function of phase purity, crystallographic orientation, layer thickness of the absorber, and numerous back contacts. This exploration results in initial CuSbS2 device prototypes with ~1% conversion efficiency; currently limited by low short-circuit current due to poor collection of photoexcited electrons, and a small open-circuit voltage due to a cliff-type conduction band offset at the CuSbS2/CdS interface (suggested by first-principles calculations). Overall, these results illustrate the potential of combinatorial methods to accelerate the development of thin film photovoltaic devices with novel absorbers.

preprint2015arXiv

CuSbSe2 photovoltaic devices with 3% efficiency

Recent technical and commercial successes of existing thin film solar cell technologies motivates exploration of next-generation photovoltaic (PV) absorber materials. Of particular scientific interest are compounds like CuSbSe$_2$, which do not have the conventional tetrahedral semiconductor bonding. Here, we demonstrate 1.5 μm thick CuSbSe$_2$ PV prototypes prepared at 380-410°C by a self-regulated sputtering process using the conventional substrate device architecture. The p-type CuSbSe$_2$ absorber has a 1.1 eV optical absorption onset, ~$10^{5}$ cm$^{-1}$ absorption coefficient at 0.3 eV above the onset, and a hole concentration of ~10$^{17}$ cm$^{-3}$. The promising >3% energy conversion efficiency (Jsc = 20 mA/cm$^2$, FF = 0.44, Voc = 0.35 V) in these initial devices is limited by bulk recombination that limits photocurrent, device engineering issues that affect fill factor, and a photovoltage deficit that likely results from the non-ideal CuSbSe2/CdS band offset.

preprint2015arXiv

Effects of disorder on carrier transport in Cu$_2$SnS$_3$

In recent years, further improvements in the efficiency of Cu$_2$ZnSn(S,Se)$_4$ photovoltaic devices have been hampered due to several materials issues, including cation disorder. Cu$_2$SnS$_3$ is a promising new absorber material that has attracted significant interest in recent years. However, similar to CZTS, Cu$_2$SnS$_3$ displays cation disorder. In this work, we develop synthetic techniques to control the disorder in Cu$_2$SnS$_3$ thin films. By manipulating the disorder in this material, we observe crystal structure changes and detect improvements in the majority carrier (hole) transport. However, when the minority carrier (electron) transport was investigated using optical pump terahertz probe spectroscopy, minimal differences were observed between the ordered and disordered Cu$_2$SnS$_3$. By combining these results with first-principles and Monte Carlo theoretical calculations, we are able to conclude that even ostensibly "ordered" Cu$_2$SnS$_3$ displays minority carrier transport properties corresponding to the disordered structure. The presence of extended planar defects in all samples, observed in TEM imaging, suggests that disorder is present even when it is not detectable using traditional structural characterization methods. The results of this study highlight some of the challenges to the further improvement of Cu$_2$SnS$_3$-based photovoltaics, and have implications for other disordered multinary semiconductors such as CZTS.