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Researcher profile

Stephan Hofmann

Stephan Hofmann contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-phcond-mat.other

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Published work

5 published item(s)

preprint2022arXiv

GFET Lab: A Graphene Field-Effect Transistor TCAD Tool

Graphene field-effect transistors (GFETs) are experimental devices which are increasingly seeing commercial and research applications. Simulation and modelling forms an important stage in facilitating this transition, however the majority of GFET modelling relies on user implementation. To this end, we present GFET Lab, a user-friendly, open-source software tool for simulating GFETs. We first provide an overview of approaches to device modelling and a brief survey of GFET compact models and limitations. From this survey, we identify three key criteria for a suitable predictive model for circuit design: it must be a compact model; it must be SPICE-compatible; it must have a minimal number of fitting parameters. We selected Jimenez's drain-current model as it best matched these criteria, and we introduce some modifications to improve the predictive properties, namely accounting for saturation velocity and the asymmetry in n- and p-type carrier mobilities. We then validate the model by comparing GFETs simulated in our tool against experimentally-obtained GFET characteristics with the same materials and geometries and find good agreement between GFET Lab and experiment. We demonstrate the ability to export SPICE models for use in higher level circuit simulations and compare SPICE simulations of GFETs against GFETs simulated in GFET Lab, again showing good agreement. Lastly, we provide a brief tutorial of GFET Lab to demonstrate and encourage its use as a community-developed piece of software with both research and educational applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Multi-dimensional microwave sensing using graphene waveguides

This paper presents an electrolytically gated broadband microwave sensor where atomically-thin graphene layers are integrated into coplanar waveguides and coupled with microfluidic channels. The interaction between a solution under test and the graphene surface causes material and concentration-specific modifications of graphene's DC and AC conductivity. Moreover, wave propagation in the waveguide is modified by the dielectric properties of materials in its close proximity via the fringe field, resulting in a combined sensing mechanism leading to an enhanced S-parameter response compared to metallic microwave sensors. The possibility of further controlling the graphene conductivity via an electrolytic gate enables a new, multi-dimensional approach merging chemical field-effect sensing and microwave measurement methods. By controlling and synchronizing frequency sweeps, electrochemical gating and liquid flow in the microfluidic channel, we generate multidimensional datasets that enable a thorough investigation of the solution under study. As proof of concept, we functionalize the graphene surface in order to identify specific single-stranded DNA sequences dispersed in phosphate buffered saline solution. We achieve a limit of detection of ~1 attomole per litre for a perfect match DNA strand and a sensitivity of ~3 dB/decade for sub-pM concentrations. These results show that our devices represent a new and accurate metrological tool for chemical and biological sensing.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Plasma-enhanced atomic layer deposition of Al$_2$O$_3$ on graphene using monolayer hBN as interfacial layer

The deposition of dielectric materials on graphene is one of the bottlenecks for unlocking the potential of graphene in electronic applications. In this paper we demonstrate the plasma enhanced atomic layer deposition of 10 nm thin high quality Al$_2$O$_3$ on graphene using a monolayer of hBN as protection layer. Raman spectroscopy was performed to analyze possible structural changes of the graphene lattice caused by the plasma deposition. The results show that a monolayer of hBN in combination with an optimized deposition process can effectively protect graphene from damage, while significant damage was observed without an hBN layer. Electrical characterization of double gated graphene field effect devices confirms that the graphene did not degrade during the plasma deposition of Al$_2$O$_3$. The leakage current densities were consistently below 1 nA/mm for electric fields across the insulators of up to 8 MV/cm, with irreversible breakdown happening above. Such breakdown electric fields are typical for Al$_2$O$_3$ and can be seen as an indicator for high quality dielectric films.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Formation of moiré interlayer excitons in space and time

Moiré superlattices in atomically thin van-der-Waals heterostructures hold great promise for an extended control of electronic and valleytronic lifetimes, the confinement of excitons in artificial moiré lattices, and the formation of novel exotic quantum phases. Such moiré-induced emergent phenomena are particularly strong for interlayer excitons, where the hole and the electron are localized in different layers of the heterostructure. In order to exploit the full potential of correlated moiré and exciton physics, a thorough understanding of the ultrafast interlayer exciton formation process and the real-space wavefunction confinement in the moiré potential is indispensable. However, direct experimental access to these parameters is limited since most excitonic quasiparticles are optically dark. Here we show that femtosecond photoemission momentum microscopy provides quantitative access to these key properties of the moiré interlayer excitons. We find that interlayer excitons are dominantly formed on the sub-50~fs timescale via interlayer tunneling at the K valleys of the Brillouin zones. In addition, we directly measure energy-momentum fingerprints of the moiré interlayer excitons by mapping their spectral signatures within the mini Brillouin zone that is built up by the twisted heterostructure. From these momentum-fingerprints, we gain quantitative access to the modulation of the exciton wavefunction within the moiré potential in real-space. Our work provides the first direct access to the interlayer moiré exciton formation dynamics in space and time and reveals new opportunities to study correlated moiré and exciton physics for the future realization of exotic quantum phases of matter.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

The bright side of defects in MoS$_2$ and WS$_2$ and a generalizable chemical treatment protocol for defect passivation

Structural defects are widely regarded as detrimental to the optoelectronic properties of monolayer transition metal dichalcogenides, leading to concerted efforts to eliminate defects via improved materials growth or post-growth passivation. Here, using steady-state and ultrafast optical spectroscopy, supported by ab initio calculations, we demonstrate that sulfur vacancy defects act as exciton traps. Current chemical treatments do not passivate these sites, leading to decreased mobility and trap-limited photoluminescence. We present a generalizable treatment protocol based on the use of passivating agents such as thiols or sulfides in combination with a Lewis acid to passivate sulfur vacancies in monolayer MoS$_2$ and WS$_2$, increasing photoluminescence up to 275 fold, while maintaining mobilities. Our findings suggest a route for simple and rational defect engineering strategies, where the passivating agent varies the electronic properties, thereby allowing the design of new heterostructures.

0 citations0 reviewsNo code linkedOpen access