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Lucia Sorba

Lucia Sorba appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallquant-phcond-mat.mtrl-scicond-mat.supr-conphysics.opticscond-mat.othercond-mat.str-elphysics.chem-ph

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Published work

39 published item(s)

preprint2025arXiv

Phonon interference effects in GaAs-GaP superlattice nanowires

Fine-tuning the functional properties of nanomaterials is crucial for technological applications. Superlattices, characterized by periodic repetitions of two or more materials in different dimensions, have emerged as a promising area of investigation. We present a study of the phonon interference effect on thermal transport in GaAs-GaP superlattice nanowires with sharp interfaces between the GaAs and GaP layers, as confirmed by high-resolution transmission electron microscopy. We performed thermal conductivity measurements using the so-called thermal bridge method on superlattice nanowires with a period varying from 4.8 to 23.3 nm. The measurements showed a minimum of the thermal conductivity as a function of superlattice period up to room temperature, that we interpreted as an indication of the crossover from coherent to incoherent thermal transport. Notably, this effect is not destroyed by surface boundary or by phonon-phonon scattering, as the crossover trend is also observed at room temperature. Our results were corroborated by both ab initio lattice dynamics and semiclassical nonequilibrium molecular dynamics calculations. These findings provide insights into the wave-like and particle-like transport of phonons in superlattice nanowires and demonstrate the potential for engineering thermal properties through precise control of the superlattice structure.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Growth and Strain Relaxation Mechanisms of InAs/InP/GaAsSb Core-Dual-Shell Nanowires

The combination of core/shell geometry and band gap engineering in nanowire heterostructures can be employed to realize systems with novel transport and optical properties. Here, we report on the growth of InAs/InP/GaAsSb core-dual-shell nanowires by catalyst-free chemical beam epitaxy on Si(111) substrates. Detailed morphological, structural, and compositional analyses of the nanowires as a function of growth parameters were carried out by scanning and transmission electron microscopy and by energy-dispersive X-ray spectroscopy. Furthermore, by combining the scanning transmission electron microscopy-Moire technique with geometric phase analysis, we studied the residual strain and the relaxation mechanisms in this system. We found that InP shell facets are well-developed along all the crystallographic directions only when the nominal thickness is above 1 nm, suggesting an island-growth mode. Moreover, the crystallographic analysis indicates that both InP and GaAsSb shells grow almost coherently to the InAs core along the 112 direction and elastically compressed along the 110 direction. For InP shell thickness above 8 nm, some dislocations and roughening occur at the interfaces. This study provides useful general guidelines for the fabrication of high-quality devices based on these core-dual-shell nanowires.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Magnetic field dependent equilibration of fractional quantum Hall edge modes

Fractional conductance is measured by partitioning $ν= 1$ edge state using gate-tunable fractional quantum Hall (FQH) liquids of filling 1/3 or 2/3 for current injection and detection. We observe two sets of FQH plateaus 1/9, 2/9, 4/9 and 1/6, 1/3, 2/3 at low and high magnetic field ends of the $ν= 1$ plateau respectively. The findings are explained by magnetic field dependent equilibration of three FQH edge modes with conductance $e^2/3h$ arising from edge reconstruction. The results reveal remarkable enhancement of the equilibration lengths of the FQH edge modes with increasing field.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Orbital Tuning of Tunnel Coupling in InAs/InP Nanowire Quantum Dots

We report results on the control of barrier transparency in InAs/InP nanowire quantum dots via the electrostatic control of the device electron states. Recent works demonstrated that barrier transparency in this class of devices displays a general trend just depending on the total orbital energy of the trapped electrons. We show that a qualitatively different regime is observed at relatively low filling numbers, where tunneling rates are rather controlled by the axial configuration of the electron orbital. Transmission rates versus filling are further modified by acting on the radial configuration of the orbitals by means of electrostatic gating, and the barrier transparency for the various orbitals is found to evolve as expected from numerical simulations. The possibility to exploit this mechanism to achieve a controlled continuous tuning of the tunneling rate of an individual Coulomb blockade resonance is discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strategy for accurate thermal biasing at the nanoscale

We analyze the benefits and shortcomings of a thermal control in nanoscale electronic conductors by means of the contact heating scheme. Ideally, this straightforward approach allows one to apply a known thermal bias across nanostructures directly through metallic leads, avoiding conventional substrate intermediation. We show, by using the average noise thermometry and local noise sensing technique in InAs nanowire based devices, that a nanoscale metallic constriction on a SiO2 substrate acts like a diffusive conductor with negligible electron-phonon relaxation and non-ideal leads. The non-universal impact of the leads on the achieved thermal bias -- which depends on their dimensions, shape and material composition -- is hard to minimize, but is possible to accurately calibrate in a properly designed nano-device. Our results allow to reduce the issue of the thermal bias calibration to the knowledge of the heater resistance and pave the way for accurate thermoelectric or similar measurements at the nanoscale.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

A Double Quantum Dot Spin Valve

A most fundamental and longstanding goal in spintronics is to electrically tune highly efficient spin injectors and detectors, preferably compatible with nanoscale electronics. Here, we demonstrate all these points using semiconductor quantum dots (QDs), individually spin-polarized by ferromagnetic split-gates (FSGs). As a proof of principle, we fabricated a double QD spin valve consisting of two weakly coupled semiconducting QDs in an InAs nanowire (NW), each with independent FSGs that can be magnetized in parallel or anti-parallel. In tunneling magnetoresistance (TMR) experiments at zero external magnetic field, we find a strongly reduced spin valve conductance for the two anti-parallel configurations, with a single QD polarization of $\sim 27\%$. The TMR can be significantly improved by a small external field and optimized gate voltages, which results in a continuously electrically tunable TMR between $+80\%$ and $-90\%$. A simple model quantitatively reproduces all our findings, suggesting a gate tunable QD polarization of $\pm 80\%$. Such versatile spin-polarized QDs are suitable for various applications, for example in spin projection and correlation experiments in a large variety of nanoelectronics experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots

We present a comprehensive electrical characterization of an InAs/InP nanowire heterostructure, comprising two InP barriers forming a quantum dot (QD), two adjacent lead segments (LSs) and two metallic contacts, and demonstrate how to extract valuable quantitative information of the QD. The QD shows very regular Coulomb blockade (CB) resonances over a large gate voltage range. By analyzing the resonance line shapes, we map the evolution of the tunnel couplings from the few to the many electron regime, with electrically tunable tunnel couplings from <1 $μ$eV to >600 $μ$eV, and a transition from the temperature to the lifetime broadened regime. The InP segments form tunnel barriers with almost fully symmetric tunnel couplings and a barrier height of ~350 meV. All of these findings can be understood in great detail based on the deterministic material composition and geometry. Our results demonstrate that integrated InAs/InP QDs provide a promising platform for electron tunneling spectroscopy in InAs nanowires, which can readily be contacted by a variety of superconducting materials to investigate subgap states in proximitized NW regions, or be used to characterize thermoelectric nanoscale devices in the quantum regime.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

MBE growth of self-assisted InAs nanowires on graphene

Self-assisted growth of InAs nanowires on graphene by molecular beam epitaxy is reported. Nanowires with diameter of ~50 nm and aspect ratio of up to 100 were achieved. The morphological and structural properties of the nanowires were carefully studied by changing the substrate from bilayer graphene through buffer layer to quasi-free-standing monolayer graphene. The positional relation of the InAs NWs with the graphene substrate was determined. A 30° orientation configuration of some of the InAs NWs is shown to be related to the surface corrugation of the graphene substrate. InAs NW-based devices for transport measurements were fabricated, and the conductance measurements showed a semi-ballistic behavior. In Josephson junction measurements in the non-linear regime, Multiple Andreev Reflections were observed, and an inelastic scattering length of about 900 nm was derived.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Mid-Infrared intersubband polaritons in dispersive metal-insulator-metal resonators

We demonstrate room-temperature strong-coupling between a mid-infrared ($λ$=9.9 $μ$m) intersubband transition and the fundamental cavity mode of a metal-insulator-metal resonator. Patterning of the resonator surface enables surface-coupling of the radiation and introduces an energy dispersion which can be probed with angle-resolved reflectivity. In particular, the polaritonic dispersion presents an accessible energy minimum at k=0 where - potentially - polaritons can accumulate. We also show that it is possible to maximize the coupling of photons into the polaritonic states and - simultaneously - to engineer the position of the minimum Rabi splitting at a desired value of the in-plane wavevector. This can be precisely accomplished via a simple post-processing technique. The results are confirmed using the temporal coupled mode theory formalism and their significance in the context of the concept of strong critical coupling is highlighted.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Perfect energy-feeding into strongly coupled systems and interferometric control of polariton absorption

The ability to feed energy into a system, or - equivalently - to drive that system with an external input is a fundamental aspect of light-matter interaction. The key concept in many photonic applications is the "critical coupling" condition: at criticality, all the energy fed to the system via an input channel is dissipated within the system itself. Although this idea was crucial to enhance the efficiency of many devices, it was never considered in the context of systems operating in a non-perturbative regime. In this so-called strong coupling regime, the matter and light degrees of freedom are in fact mixed into dressed states, leading to new eigenstates called polaritons. Here we demonstrate that the strong coupling regime and the critical coupling condition can indeed coexist; in this situation, which we term strong critical coupling, all the incoming energy is converted into polaritons. A semiclassical theory - equivalently applicable to acoustics or mechanics - reveals that the strong critical coupling corresponds to a special curve in the phase diagram of the coupled light-matter oscillators. In the more general case of a system radiating via two scattering ports, the phenomenology displayed is that of coherent perfect absorption (CPA), which is then naturally understood and described in the framework of critical coupling. Most importantly, we experimentally verify polaritonic CPA in a semiconductor-based intersubband-polariton photonic-crystal membrane resonator. This result opens new avenues in the exploration of polariton physics, making it possible to control the pumping efficiency of a system almost independently of its Rabi energy, i.e., of the energy exchange rate between the electromagnetic field and the material transition.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Photonic bands and defect modes in metallo-dielectric photonic crystal slabs

Photonic components based on structured metallic elements show great potential for device applications where field enhancement and confinement of the radiation on a subwavelength scale is required. In this paper we report a detailed study of a prototypical metallo-dielectric photonic structure, where features well known in the world of dielectric photonic crystals, like band gaps and defect modes, are exported to the metallic counterpart, with interesting applications to infrared science and technology, as for instance in quantum well infrared photodetectors, narrow-band spectral filters, and tailorable thermal emitters.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Saturation and bistability of defect-mode intersubband polaritons

In this article we report about linear and nonlinear optical properties of intersubband cavity polariton samples, where the resonant photonic mode is a defect state in a metallo-dielectric photonic crystal slab. By tuning a single geometric parameter of the resonator, the cavity Q-factor can reach values as large as 85, with a consequent large cooperativity for the light-matter interaction. We show that a device featuring large cooperativity leads to sharp saturation, or even bistability, of the polariton states. This nonlinear dynamics occurs at the crossover between the weak and the strong coupling regimes, where the weak critical coupling concept plays a fundamental role.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Suspended InAs nanowire Josephson junctions assembled via dielectrophoresis

We present a novel technique for the realization of suspended Josephson junctions based on InAs semiconductor nanowires. The devices are assembled using a technique of drop-casting guided by dielectrophoresis that allows to finely align the nanostructures on top of the electrodes. The proposed architecture removes the interaction between the nanowire and the substrate which is known to influence disorder and the orientation of the Rashba vector. The relevance of this approach in view of the implementation of Josephson junctions based on High-Temperature Superconductors is discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Mapping of Axial Strain in InAs/InSb Heterostructured Nanowires

The article presents a mapping of the residual strain along the axis of InAs/InSb heterostructured nanowires. Using confocal Raman measurements, we observe a gradual shift in the TO phonon mode along the axis of these nanowires. We attribute the observed TO phonon shift to a residual strain arising from the InAs/InSb lattice mismatch. We find that the strain is maximum at the interface and then monotonically relaxes towards the tip of the nanowires. We also analyze the crystal structure of the InSb segment through selected area electron diffraction measurements and electron diffraction tomography on individual nanowires.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Nanoscale spin rectifiers controlled by the Stark effect

The control of orbital and spin state of single electrons is a key ingredient for quantum information processing, novel detection schemes, and, more generally, is of much relevance for spintronics. Coulomb and spin blockade (SB) in double quantum dots (DQDs) enable advanced single-spin operations that would be available even for room-temperature applications for sufficiently small devices. To date, however, spin operations in DQDs were observed at sub-Kelvin temperatures, a key reason being that scaling a DQD system while retaining an independent field-effect control on the individual dots is very challenging. Here we show that quantum-confined Stark effect allows an independent addressing of two dots only 5 nm apart with no need for aligned nanometer-size local gating. We thus demonstrate a scalable method to fully control a DQD device, regardless of its physical size. In the present implementation we show InAs/InP nanowire (NW) DQDs that display an experimentally detectable SB up to 10 K. We also report and discuss an unexpected re-entrant SB lifting as a function magnetic-field intensity.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Strain induced band alignment in wurtzite-zincblende InAs heterostructured nanowires

We study band alignment in wurtzite-zincblende polytype InAs heterostructured nanowires using temperature dependent resonance Raman measurements. Nanowires having two different wurtzite fractions are investigated. Using visible excitation wavelengths in resonance Raman measurements, we probe the electronic band alignment of these semiconductor nanowires near a high symmetry point of the Brillouin zone (E$_{1}$ gap). The strain in the crystal structure, as revealed from the shift of the phonon mode, explains the observed band alignment at the wurtzite-zincblende interface. Our experimental results are further supported by electronic structure calculations for such periodic heterostructured interface.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Large thermal biasing of individual gated nanostructures

We demonstrate a novel nanoheating scheme that yields very large and uniform temperature gradients up to about 1K every 100nm, in an architecture which is compatible with the field-effect control of the nanostructure under test. The temperature gradients demonstrated largely exceed those typically obtainable with standard resistive heaters fabricated on top of the oxide layer. The nanoheating platform is demonstrated in the specific case of a short-nanowire device.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Raman scattering study of InAs nanowire under high pressure

The pressure dependent phonon modes of predominant wurtzite InAs nanowires has been investigated in a diamond anvil cell under hydrostatic pressure up to 58 GPa. The TO and LO at Gamma point and other optical phonon frequencies increase linearly while the LO TO splitting decreases with pressure. The recorded Raman modes have been used to determine the mode Gruneisen parameters and also the value of Borns transverse effective charge. The calculated Borns transverse effective charge exhibits a linear reduction with increasing pressure implying an increase in covalency of nanowires under compression. The intensity of the Raman modes shows a strong enhancement as the energy of E1 band gap approaches the excitation energy, which has been discussed in terms of resonant Raman scattering. An indication of structural phase transformation has been observed above pressure 10.87 GPa. We propose this transformation may be from wurtzite to rock salt phase although further experimental and theoretical confirmations are needed.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Scanning Gate Imaging of quantum point contacts and the origin of the 0.7 Anomaly

The origin of the anomalous transport feature appearing at conductance G \approx 0.7 x (2e2/h) in quasi-1D ballistic devices - the so-called 0.7 anomaly - represents a long standing puzzle. Several mechanisms were proposed to explain it, but a general consensus has not been achieved. Proposed explanations are based on quantum interference, Kondo effect, Wigner crystallization, and more. A key open issue is whether point defects that can occur in these low-dimensional devices are the physical cause behind this conductance anomaly. Here we adopt a scanning gate microscopy technique to map individual impurity positions in several quasi-1D constrictions and correlate these with conductance characteristics. Our data demonstrate that the 0.7 anomaly can be observed irrespective of the presence of localized defects, and we conclude that the 0.7 anomaly is a fundamental property of low-dimensional systems.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electronic Band Structure of Wurtzite GaP Nanowires via Resonance Raman Spectroscopy

Raman measurements are performed on defect-free wurzite GaP nanowires. Resonance Raman measurements are carried out over the excitation energy range between 2.19 and 2.71 eV. Resonances at 2.38 eV and 2.67 eV of the E1(LO) mode and at 2.67 eV of the A1(LO) are observed. The presence of these intensity resonances clearly demonstrates the existence of energy states with Gamma_9hh and Gamma_7V (Gamma_7C) symmetries of the valence (conduction) band and allows to measure WZ phase GaP band energies at the Gamma point. In addition, we have investigated temperature dependent resonant Raman measurements, which allowed us to extrapolate the zero temperature values of Gamma point energies, along with the crystal field and spin-orbit splitting energies. Above results provide a feedback for refining available theoretical calculations to derive the correct wurtzite III-V semiconductor band structure.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Gate controlled coupling of intersubband plasmons

The optical response of a heavily doped quantum well, with two occupied subbands, has been investigated as a function of the electronic density. It is shown that the two optically active transitions are mutually coupled by dipole-dipole Coulomb interaction, which strongly renormalizes their absorption amplitude. In order to demonstrate this effect, we have measured a set of optical spectra on a device in which the electronic density can be tuned by the application of a gate voltage. Our results show that the absorption spectra can be correctly described only by taking into account the Coulomb coupling between the two transitions. As a consequence, the optical dipoles originating from intersubband transitions are not independent, but rather coupled oscillators with an adjustable strength.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Giant thermovoltage in single InAs-nanowire field-effect transistors

Millivolt range thermovoltage is demonstrated in single InAs-nanowire based field effect transistors. Thanks to a buried heating scheme, we drive both a large thermal bias DT>10K and a strong field-effect modulation of electric conductance on the nanostructures. This allows the precise mapping of the evolution of the Seebeck coefficient S as a function of the gate-controlled conductivity between room temperature and 100K$. Based on these experimental data a novel estimate of the electron mobility is given. This value is compared with the result of standard field-effect based mobility estimates and discussed in relation to the effect of charge traps in the devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Imaging backscattering through impurity-induced antidots in quantum Hall constrictions

We exploit the biased tip of a scanning gate microscope (SGM) to induce a controlled backscattering between counter-propagating edge channels in a wide constriction in the quantum Hall regime. We compare our detailed conductance maps with a numerical percolation model and demonstrate that conductance fluctuations observed in these devices as a function of the gate voltage originate from backscattering events mediated by localized states pinned by potential fluctuations. Our imaging technique allows us to identify the necessary conditions for the activation of these backscattering processes and also to reconstruct the constriction confinement potential profile and the underlying disorder.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Imaging fractional incompressible stripes in integer quantum Hall systems

Transport experiments provide conflicting evidence on the possible existence of fractional order within integer quantum Hall systems. In fact integer edge states sometimes behave as monolithic objects with no inner structure, while other experiments clearly highlight the role of fractional substructures. Recently developed low-temperature scanning probe techniques offer today an opportunity for a deeper-than-ever investigation of spatial features of such edge systems. Here we use scanning gate microscopy and demonstrate that fractional features were unambiguously observed in every integer quantum Hall constriction studied. We present also an experimental estimate of the width of the fractional incompressible stripes corresponding to filling factors 1/3, 2/5, 3/5, and 2/3. Our results compare well with predictions of the edge-reconstruction theory.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Internal field induced enhancement and effect of resonance in Raman scattering of InAs nanowires

An internal field induced resonant intensity enhancement of Raman scattering of phonon excitations in InAs nanowires is reported. The experimental observation is in good agreement with the simulated results for the scattering of light under varying incident wavelengths, originating from the enhanced internal electric field in an infinite dielectric cylinder. Our analysis demonstrates the combined effect of the first higher lying direct band gap energy (E1) and the refractive index of the InAs nanowires in the internal field induced resonant Raman scattering. Furthermore, the difference in the relative contribution of electro-optic effect and deformation potential in Raman scattering of nanowires and bulk InAs over a range of excitation energies is discussed by comparing the intensity ratio of their LO and TO phonon modes.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Probing the local temperature of a 2DEG microdomain with a quantum dot: measurement of electron-phonon interaction

We demonstrate local detection of the electron temperature in a two-dimensionalmicrodomain using a quantum dot. Our method relies on the observation that a temperature bias across the dot changes the functional form of Coulomb-blockade peaks. We apply our results to the investigation of electron-energy relaxation at subkelvin temperatures, find that the energy flux from electrons into phonons is proportional to the fifth power of temperature, and give a measurement of the coupling constant.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Transition from strong to ultra-strong coupling regime in mid-infrared metal-dielectric-metal cavities

We have investigated the transition from strong to ultra-strong coupling regime between a mid-infrared intersubband excitation and the fundamental mode of a metal-dielectric-metal microcavity. The ultra-strong coupling regime is demonstrated up to room temperature for a wavelength of $11.7 μ$m by using 260 nm thick cavities, which impose an extreme sub-wavelength confinement. By varying the doping of our structures we show that the experimental signature of the transition to the ultra-strong coupling regime is the opening of a photonic gap in the polariton dispersion. The width of this gap depends quadratically on the ratio between the Rabi and intersubband transition energies.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Controlled coupling of spin-resolved quantum Hall edge states

Topologically-protected edge states are dissipationless conducting surface states immune to impurity scattering and geometrical defects that occur in electronic systems characterized by a bulk insulating gap. One example can be found in a two-dimensional electron gas (2DEG) under high magnetic field in the quantum Hall regime. Based on the coherent control of the coupling between these protected states, several theoretical proposals for the implementation of information processing architectures were proposed. Here we introduce and experimentally demonstrate a new method that allows us to controllably couple co-propagating spin-resolved edge states of a QH insulator. The scheme exploits a spatially-periodic in-plane magnetic field that is created by an array of Cobalt nano-magnets placed at the boundary of the 2DEG. A maximum charge/spin transfer of about 28% is achieved at 250 mK. This result may open the way to the realization of scalable quantum-information architectures exploiting the spin degree of freedom of topologically-protected states.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Impact of electron heating on the equilibration between quantum Hall edge channels

When two separately contacted quantum Hall (QH) edge channels are brought into interaction, they can equilibrate their imbalance via scattering processes. In the present work we use a tunable QH circuit to implement a junction between co-propagating edge channels whose length can be controlled with continuity. Such a variable device allows us to investigate how current-voltage characteristics evolve when the junction length d is changed. Recent experiments with fixed geometry reported a significant reduction of the threshold voltage for the onset of photon emission, whose origin is still under debate. Our spatially resolved measurements reveal that this threshold shift depends on the junction length. We discuss this unexpected result on the basis of a model which demonstrates that a heating of electrons is the dominant process responsible for the observed reduction of the threshold voltage.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Proximity effect in a two dimensional electron gas probed with a lateral quantum dot

We report low-temperature transport measurements performed on a planar Nb-InGaAs-Nb proximity Josephson junction hosting a gate-defined lateral quantum dot in the weak-link. We first study quasiparticle and Josephson transport through the open junction, when all gates are grounded. When the quantum dot is defined in the normal region by electrostatic depletion, cotunneling spectroscopy allows us to directly probe the energy gap induced in the two dimensional electron gas. Our data show good qualitative agreement with a model describing resonant tunneling through an Anderson impurity connected to superconducting electrodes. These results demonstrate the feasibility of top-gated nanodevices based on a two-dimensional electron gas coupled to a superconductor.

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preprint2011arXiv

Quantum dot spectroscopy of proximity-induced superconductivity in a two-dimensional electron gas

We report the realization of a hybrid superconductor-quantum dot device by means of top-down nanofabrication starting from a two dimensional electron gas in a InGaAs/InAlAs semiconductor heterostructure. The quantum dot is defined by electrostatic gates placed within the normal region of a planar Nb-InGaAs quantum well-Nb junction. Measurements in the regime of strong Coulomb blockade as well as cotunneling spectroscopy allow to directly probe the proximity-induced energy gap in a ballistic two-dimensional electron gas coupled to superconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Raman sensitivity to crystal structure in InAs nanowires

We report a combined electron transmission and Raman spectroscopy study of InAs nanowires. We demonstrate that the temperature dependent behavior of optical phonon energies can be used to determine the relative wurtzite fraction in the InAs nanowires. Furthermore, we propose that the interfacial strain between zincblende and wurtzite phases along the length of the wires manifests in the temperature-evolution of the phonon linewidths. From these studies, temperature-dependent Raman measurements emerge has a non-invasive method to study polytypism in such nanowires.

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preprint2011arXiv

Spatially-resolved analysis of edge-channel equilibration in quantum Hall circuits

We demonstrate an innovative quantum Hall circuit with variable geometry employing the moveable electrostatic potential induced by a biased atomic force microscope tip. We exploit this additional degree of freedom to identify the microscopic mechanisms that allow two co-propagating edge channels to equilibrate their charge imbalance. Experimental results are compared with tight-binding simulations based on a realistic model for the disorder potential. This work provides also an experimental realization of a beam mixer between co-propagating edge channels, a still elusive building block of a recently proposed new class of quantum interferometers.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Hybrid InAs nanowire-vanadium proximity SQUID

We report the fabrication and characterization of superconducting quantum interference devices (SQUIDs) based on InAs nanowires and vanadium superconducting electrodes. These mesoscopic devices are found to be extremely robust against thermal cycling and to operate up to temperatures of $\sim2.5$~K with reduced power dissipation. We show that our geometry allows to obtain nearly-symmetric devices with very large magnetic-field modulation of the critical current. All these properties make these devices attractive for on-chip quantum-circuit implementation.

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preprint2010arXiv

Manipulation of electron orbitals in hard-wall InAs/InP nanowire quantum dots

We present a novel technique for the manipulation of the energy spectrum of hard-wall InAs/InP nanowire quantum dots. By using two local gate electrodes, we induce a strong electric dipole moment on the dot and demonstrate the controlled modification of its electronic orbitals. Our approach allows us to dramatically enhance the single-particle energy spacing between the first two quantum levels in the dot and thus to increment the working temperature of our InAs/InP single-electron transistors. Our devices display a very robust modulation of the conductance even at liquid nitrogen temperature, while allowing an ultimate control of the electron filling down to the last free carrier. Potential further applications of the technique to time-resolved spin manipulation are also discussed.

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preprint2009arXiv

Light-matter excitations in the ultra-strong coupling regime

In a microcavity, light-matter coupling is quantified by the vacuum Rabi frequency $Ω_R$. When $Ω_R$ is larger than radiative and non-radiative loss rates, the system eigenstates (polaritons) are linear superposition of photonic and electronic excitations, a condition actively investigated in diverse physical implementations. Recently, a quantum electrodynamic regime (ultra-strong coupling) was predicted when $Ω_R$ becomes comparable to the transition frequency. Here we report unambiguous signatures of this regime in a quantum-well intersubband microcavity. Measuring the cavity-polariton dispersion in a room-temperature linear optical experiment, we directly observe the anti-resonant light-matter coupling and the photon-energy renormalization of the vacuum field.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Tuning non-linear charge transport between integer and fractional quantum Hall states

Controllable point junctions between different quantum Hall phases are a necessary building block for the development of mesoscopic circuits based on fractionally-charged quasiparticles. We demonstrate how particle-hole duality can be exploited to realize such point-contact junctions. We show an implementation for the case filling factors $ν=1$ and $ν^*\le1$ in which both the fractional filling $ν^*$ and the coupling strength can be finely and independently tuned. A peculiar crossover from insulating to conducting behavior as $ν^*$ goes from 1/3 to 1 is observed. These results highlight the key role played on inter-edge tunneling by local charge depletion at the point contact.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Relevant energy scale in hybrid mesoscopic Josephson junctions

Transport properties of high quality Nb/semiconductor/Nb long Josephson junctions based on metamorphic In_0.75Ga_0.25As epitaxial layers are reported. Different junction geometries and fabrication procedures are presented that allow a systematic comparison with quasiclassical theory predictions. The impact of junction transparency is highlighted and a procedure capable of yielding a high junction quality factor is identified.

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preprint2005arXiv

In_(0.75)Ga_(0.25)As on GaAs submicron rings and their application for coherent nanoelectronic devices

Electron-phase modulation in magnetic and electric fields will be presented in In_(0.75)Ga_(0.25)As Aharonov-Bohm (AB) rings. The zero Schottky barrier of this material made it possible to nanofabricate devices with radii down to below 200 nm without carrier depletion. We shall present a fabrication scheme based on wet and dry etching that yielded excellent reproducibility, very high contrast of the oscillations and good electrical gating. The operation of these structures is compatible with closed-cycle refrigeration and suggests that this process can yield coherent electronic circuits that do not require cryogenic liquids. The InGaAs/AlInAs heterostructure was grown by MBE on a GaAs substrate [1], and in light of the large effective g-factor and the absence of the Schottky barrier is a material system of interest for the investigation of spin-related effects [2-4]} and the realization of hybrid superconductor/semiconductor devices [5].

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