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Researcher profile

Stanisław Krukowski

Stanisław Krukowski contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.stat-mech

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Published work

7 published item(s)

preprint2013arXiv

Energy of adsorption at semiconducting surfaces with Fermi level differently pinned -- ab initio study

It is shown that adsorption energy at semiconductor surfaces critically depends on the charge transfer to or from the adsorbed species. For the processes without the charge transfer, such as molecular adsorption of closed shell systems, the adsorption energy is determined by the bonding only. In the case involving charge transfer, such as open shell systems like metal atoms or the dissociating molecules, the energy attains different value for the Fermi level differently pinned. The DFT simulation of adsorption of ammonia at hydrogen covered GaN(0001) confirms these predictions: the molecular adsorption is independent on the coverage while the dissociative process energy varies by several electronvolts.

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preprint2013arXiv

Foundations of ab initio simulations of electric charges and fields at semiconductor surfaces within slab models

Semiconductor surfaces were divided into charge categories, i.e. surface acceptor, donor and neutral ones that are suitable for simulations of their properties within a slab model. The potential profiles, close to the charged surface states, accounting for explicit dependence of the point defects energy, were obtained. A termination charge slab model was formulated and analyzed proving that two control parameters of slab simulations exist: the slope and curvature of electric potential profiles which can be translated into a surface and volumetric charge density. The procedures of slab model parameter control are described and presented using examples of the DFT simulations of GaN and SiC surfaces showing the potential profiles, linear or curved, depending on the band charge within the slab. It was also demonstrated that the field at the surface may affect some surface properties in a considerable degree proving that verification of this dependence is obligatory for a precise simulation of the properties of semiconductor surfaces.

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preprint2012arXiv

An influence of parallel electric field on the dispersion relation of graphene - a new route to Dirac logics

Ab initio density functional theory (DFT) simulations were used to investigate an influence of electric field, parallel to single and multilayer graphene on its electron dispersion relations close to K point. It was shown that for both single layer and AAAA stacking multilayer graphene under influence of parallel field the dispersion relations transform to nonlinear. The effect, associated with the hexagonal symmetry breaking, opens new route to high speed transistors and logical devices working in Dirac regime. The implementation of such device is presented.

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preprint2012arXiv

On the nature of Surface States Stark Effect at clean GaN(0001) surface

Recently developed model allows for simulations of electric field influence on the surface states. The results of slab simulations show considerable change of the energy of quantum states in the electric field, i.e. Stark Effect associated with the surface (SSSE - Surface States Stark Effect). Detailed studies of the GaN slabs demonstrate spatial variation of the conduction and valence band energy revealing real nature of SSSE phenomenon. It is shown that long range variation of the electric potential is in accordance with the change of the energy of the conduction and valence bands. However, at short distances from GaN(0001) surface, the valence band follows the potential change while the conduction states energy is increased due to quantum overlap repulsion by surface states. It is also shown that at clean GaN(0001) surface Fermi level is pinned at about 0.34 eV below the long range projection of the conduction band bottom and varies with the field by about 0.31 eV due to electron filling of the surface states.

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preprint2011arXiv

Long time evolution of meandered steps during the crystal growth processes

Step meandering during growth of gallium nitride (0001) surface is studied using kinetic Monte Carlo method. Simulated growth process, conducted in N-rich conditions are therefore controlled by Ga atoms surface diffusion. The model employs dominating four-body interactions of Ga atoms that cause step flow anisotropy during growth. Overall kinetics and shape selection features of step meandering are analyzed assuming their dependence on the external particle flux and on the temperature. It appears that at relatively high temperatures and low fluxes steps move regularly preserving their initial shapes of straight, parallel lines. For higher fluxes and at wide range of temperatures step meandering happens. It is shown that, depending on the initial surface parameters, two different scenarios of step meandering are realized. In both these regimes meandering has different character as a function of time. For relatively high fluxes meanders have wavelengths shorter than the terrace width and they grow independently. Eventually surface ends up as a rough structure. When flux is lower regular pattern of meanders emerges. Step meander even if Schwoebel barrier is absent. Too high barrier destroys step stability. The amplitude of wavelike step meanders increases in time up to a saturation value. The mechanism of such meander development is elucidated.

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preprint2011arXiv

Structures built by steps of evaporated crystal surface Monte Carlo simulations and experimental data for GaN epi layers

We present Monte Carlo simulation data obtained for the annealed surface GaN(0001) and compare them with the experimental data. High temperature particle evaporation is a part of substrate preparation processes before epitaxy. The ideal surface ordering expected after such heating is a pattern of parallel, equally distanced steps. It appears however, that different types of step structures emerge at high temperatures. We show how the creation of characteristic patterns depends on the temperature and the annealing time. The first pattern is created for a very short evaporation time and consists of rough steps. The second pattern built by curly steps is characteristic for longer evaporation times and lower temperatures. The third pattern, in which steps merge together creating bunches of steps happens for the long enough time. At higher temperatures, bunches of steps bend into the wavy-like structures.

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preprint2010arXiv

Double step structure and meandering due to the many body interaction at GaN(0001) surface in N-rich conditions

Growth of gallium nitride on GaN(0001) surface is modeled by Monte Carlo method. Simulated growth is conducted in N-rich conditions, hence it is controlled by Ga atoms surface diffusion. It is shown that dominating four-body interactions of Ga atoms can cause step flow anisotropy. Kinetic Monte Carlo simulations show that parallel steps with periodic boundary conditions form double terrace structures, whereas initially V -shaped parallel step train initially bends and then every second step moves forward, building regular, stationary ordering as observed during MOVPE or HVPE growth of GaN layers. These two phenomena recover surface meandered pair step pattern observed, since 1953, on many semiconductor surfaces, such as SiC, Si or GaN. Change of terrace width or step orientation particle diffusion jump barriers leads either to step meandering or surface roughening. Additionally it is shown that step behavior changes with the Schwoebel barrier height. Furthermore, simulations under conditions corresponding to very high external particle flux result in triangular islands grown at the terraces. All structures, emerging in the simulations, have their corresponding cases in the experimental results.

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