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Jacek Piechota

Jacek Piechota contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci cond-mat.other cond-mat.mes-hall

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preprint2012arXiv

An influence of parallel electric field on the dispersion relation of graphene - a new route to Dirac logics

Ab initio density functional theory (DFT) simulations were used to investigate an influence of electric field, parallel to single and multilayer graphene on its electron dispersion relations close to K point. It was shown that for both single layer and AAAA stacking multilayer graphene under influence of parallel field the dispersion relations transform to nonlinear. The effect, associated with the hexagonal symmetry breaking, opens new route to high speed transistors and logical devices working in Dirac regime. The implementation of such device is presented.

preprint2011arXiv

Role of structure of C-terminated 4H-SiC(000) surface in growth of graphene layers - transmission electron microscopy and density functional theory studies

Principal structural defects in graphene layers, synthesized on a carbon-terminated face, i.e. the SiC(000) face of a 4H-SiC substrate, are investigated using microscopic methods. Results of high-resolution transmission electron microscopy (HRTEM) reveal their atomic arrangement. Mechanism of such defects creation, directly related to the underlying crystallographic structure of the SiC substrate, is elucidated. The connection between the 4H-SiC(000) surface morphology, including the presence of the single atomic steps, the sequences of atomic steps, and also the macrosteps, and the corresponding emergence of planar defective structure (discontinuities of carbon layers and wrinkles) is revealed. It is shown that disappearance of the multistep island leads to the creation of wrinkles in the graphene layers. The density functional theory (DFT) calculation results show that the diffusion of both silicon and carbon atoms is possible on a Si-terminated SiC surface at a high temperature close to 1600°C. The creation of buffer layer at the Si-terminated surface effectively blocks horizontal diffusion, preventing growth of thick graphene layer at this face. At the carbon terminated SiC surface, the buffer layer is absent leaving space for effective horizontal diffusion of both silicon and carbon atoms. DFT results show that excess carbon atoms converts a topmost carbon layer to sp2 bonded configuration, liberating Si atoms in barrierless process. The silicon atoms escape through the channels created at the bending layers defects, while the carbon atoms are incorporated into the growing graphene layers. These results explain growth of thick graphene underneath existing graphene cover and also the creation of the principal defects at the C-terminated SiC(0001) surface

preprint2010arXiv

Density functional theory study of quasi-free-standing graphene layer on 4H-SiC(0001) surface decoupled by hydrogen atoms

Epitaxial graphene, grown on SiC(0001) surface, has been widely studied both experimentally and theoretically. It was found that first epitaxial graphene layer in such structures is a buffer layer i.e. there are no characteristic Dirac cones in the band structure associated with it. However, C. Riedl et al. (Phys. Rev. Lett. 103, 246804 (2009)) in their experimental work observed recently that hydrogen intercalation of SiC-graphene samples can recover electronic properties typical to selfstanding graphene. The possible scenarios of hydrogen intercalation inducing graphene layer decoupling, including both the hydrogen penetration paths and energetically stable positions of hydrogen atoms, were modeled in ab initio DFT calculations. From the obtained results it follows that, due to intercalation, the graphene layer moves away to achieve about 3.9 A distance from the SiC surface. Electronic band structure, calculated for such quasi free standing graphene, exhibits Dirac-cone behavior which is in agreement with ARPES measurements.

preprint2010arXiv

Stacking Sequence Dependence of Graphene Layers on SiC(000-1) - Experimental and Theoretical Investigation

Different stacking sequences of graphene are investigated using a combination of experimental and theoretical methods. The high-resolution transmission electron microscopy (HRTEM) of the stacking sequence of several layers of graphene, formed on the C-terminated 4H-SiC(0001) surface, was used to determine the stacking sequence and the interlayer distances. These data prove that the three metastable configurations exist: ABAB, AAAA, ABCA. In accordance to these, findings those three cases were considered theoretically, using Density Functional Theory calculations comparing graphene sheets, freestanding and positioned on the SiC(0001) substrate. The total energies were calculated, the most stable structure was identified and the electronic band structure was obtained. The four graphene layer electron band structure depends crucially on the stacking: for the ABAB and ABCA stacking, the bands, close to the K point, are characterized by the hyperbolic dispersion relation while the AA stacking the dispersion in this region is linear, similar to that of a single graphene layer. It was also shown that the linear dispersion relation is preserved in the presence of the SiC substrate, and also for different distances between adjacent carbon layers.

preprint2009arXiv

A comparative DFT study of electronic properties of 2H-, 4H- and 6H-SiC(0001) and SiC(000-1) clean surfaces: Significance of the surface Stark effect

Electric field, uniform within the slab, emerging due to Fermi level pinning at its both sides is analyzed using DFT simulations of the SiC surface slabs of different thickness. It is shown that for thicker slab the field is nonuniform and this fact is related to the surface state charge. Using the electron density and potential profiles it is proved that for high precision simulations it is necessary to take into account enough number of the Si-C layers. We show that using 12 diatomic layers leads to satisfactory results. It is also demonstrated that the change of the opposite side slab termination, both by different type of atoms or by their location, can be used to adjust electric field within the slab, creating a tool for simulation of surface properties, depending on the doping in the bulk of semiconductor. Using these simulations it was found that, depending on the electric field, the energy of the surface states changes in a different way than energy of the bulk states. This criterion can be used to distinguish Shockley and Tamm surface states. The electronic properties, i.e. energy and type of surface states of the three clean surfaces: 2H-, 4H-, 6H-SiC(0001), and SiC($000 \bar{1}$) are analyzed and compared using field dependent DFT simulations.