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Paweł Kempisty

Paweł Kempisty contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci

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preprint2013arXiv

Energy of adsorption at semiconducting surfaces with Fermi level differently pinned -- ab initio study

It is shown that adsorption energy at semiconductor surfaces critically depends on the charge transfer to or from the adsorbed species. For the processes without the charge transfer, such as molecular adsorption of closed shell systems, the adsorption energy is determined by the bonding only. In the case involving charge transfer, such as open shell systems like metal atoms or the dissociating molecules, the energy attains different value for the Fermi level differently pinned. The DFT simulation of adsorption of ammonia at hydrogen covered GaN(0001) confirms these predictions: the molecular adsorption is independent on the coverage while the dissociative process energy varies by several electronvolts.

preprint2013arXiv

Foundations of ab initio simulations of electric charges and fields at semiconductor surfaces within slab models

Semiconductor surfaces were divided into charge categories, i.e. surface acceptor, donor and neutral ones that are suitable for simulations of their properties within a slab model. The potential profiles, close to the charged surface states, accounting for explicit dependence of the point defects energy, were obtained. A termination charge slab model was formulated and analyzed proving that two control parameters of slab simulations exist: the slope and curvature of electric potential profiles which can be translated into a surface and volumetric charge density. The procedures of slab model parameter control are described and presented using examples of the DFT simulations of GaN and SiC surfaces showing the potential profiles, linear or curved, depending on the band charge within the slab. It was also demonstrated that the field at the surface may affect some surface properties in a considerable degree proving that verification of this dependence is obligatory for a precise simulation of the properties of semiconductor surfaces.

preprint2012arXiv

On the nature of Surface States Stark Effect at clean GaN(0001) surface

Recently developed model allows for simulations of electric field influence on the surface states. The results of slab simulations show considerable change of the energy of quantum states in the electric field, i.e. Stark Effect associated with the surface (SSSE - Surface States Stark Effect). Detailed studies of the GaN slabs demonstrate spatial variation of the conduction and valence band energy revealing real nature of SSSE phenomenon. It is shown that long range variation of the electric potential is in accordance with the change of the energy of the conduction and valence bands. However, at short distances from GaN(0001) surface, the valence band follows the potential change while the conduction states energy is increased due to quantum overlap repulsion by surface states. It is also shown that at clean GaN(0001) surface Fermi level is pinned at about 0.34 eV below the long range projection of the conduction band bottom and varies with the field by about 0.31 eV due to electron filling of the surface states.