Researcher profile

Magdalena A. Załuska-Kotur

Magdalena A. Załuska-Kotur contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2016arXiv

Self-organizing structures in immiscible crystals

Spinodal decomposition process in the system of immiscible PbTe/CdTe compounds is analyzed as an example of a self-organizing structure. The immiscibility of the constituents leads to the observed morphological transformations like anisotropy driven formation of quantum dots and nanowires, and to the phase separation at the highest temperatures. Proposed model accomplishes bulk and surface diffusion together with the anisotropic mobility of material components. We analyze its properties by kinetic Monte Carlo simulations and show that it is able to reproduce all of the structures observed experimentally in the process of PbTe/CdTe growth. We show that studied mechanisms of dynamic processes play different role in the creation of zero--, one--, two-- and finally three-dimensional structures. The shape of grown structures is different for relatively thick multilayers when bulk diffusion cooperates with the anisotropic mobility, in annealed structure when isotropic bulk diffusion only decides about the process and finally for thin multilayers when surface diffusion is the most decisive factor. We compare our results with experimentally grown systems and show that proposed model explains the diversity of observed structures.

preprint2014arXiv

Diffusion of Ga adatoms at the surface of GaAs(001) c(4x4) $α$ and $β$ reconstructions

Diffusion of Ga adatom at the As rich, low temperature c(4$\times$4) reconstructions of GaAs(001) surface is analyzed. We use known energy landscape for the motion of Ga adatom at two different $α$ and $β$ surface phases to calculate diffusion tensor by means of the variational approach. Diffusion coefficient describes the character of low density adatom system motion at the surface. The resulting expressions allow to identify main paths of an adatom diffusion and to calculate an activation energy of this process. It is shown that diffusion at the $α$ surface is slower and more anisotropic than this for the $β$ surface.

preprint2011arXiv

Long time evolution of meandered steps during the crystal growth processes

Step meandering during growth of gallium nitride (0001) surface is studied using kinetic Monte Carlo method. Simulated growth process, conducted in N-rich conditions are therefore controlled by Ga atoms surface diffusion. The model employs dominating four-body interactions of Ga atoms that cause step flow anisotropy during growth. Overall kinetics and shape selection features of step meandering are analyzed assuming their dependence on the external particle flux and on the temperature. It appears that at relatively high temperatures and low fluxes steps move regularly preserving their initial shapes of straight, parallel lines. For higher fluxes and at wide range of temperatures step meandering happens. It is shown that, depending on the initial surface parameters, two different scenarios of step meandering are realized. In both these regimes meandering has different character as a function of time. For relatively high fluxes meanders have wavelengths shorter than the terrace width and they grow independently. Eventually surface ends up as a rough structure. When flux is lower regular pattern of meanders emerges. Step meander even if Schwoebel barrier is absent. Too high barrier destroys step stability. The amplitude of wavelike step meanders increases in time up to a saturation value. The mechanism of such meander development is elucidated.

preprint2011arXiv

Structures built by steps of evaporated crystal surface Monte Carlo simulations and experimental data for GaN epi layers

We present Monte Carlo simulation data obtained for the annealed surface GaN(0001) and compare them with the experimental data. High temperature particle evaporation is a part of substrate preparation processes before epitaxy. The ideal surface ordering expected after such heating is a pattern of parallel, equally distanced steps. It appears however, that different types of step structures emerge at high temperatures. We show how the creation of characteristic patterns depends on the temperature and the annealing time. The first pattern is created for a very short evaporation time and consists of rough steps. The second pattern built by curly steps is characteristic for longer evaporation times and lower temperatures. The third pattern, in which steps merge together creating bunches of steps happens for the long enough time. At higher temperatures, bunches of steps bend into the wavy-like structures.

preprint2010arXiv

Double step structure and meandering due to the many body interaction at GaN(0001) surface in N-rich conditions

Growth of gallium nitride on GaN(0001) surface is modeled by Monte Carlo method. Simulated growth is conducted in N-rich conditions, hence it is controlled by Ga atoms surface diffusion. It is shown that dominating four-body interactions of Ga atoms can cause step flow anisotropy. Kinetic Monte Carlo simulations show that parallel steps with periodic boundary conditions form double terrace structures, whereas initially V -shaped parallel step train initially bends and then every second step moves forward, building regular, stationary ordering as observed during MOVPE or HVPE growth of GaN layers. These two phenomena recover surface meandered pair step pattern observed, since 1953, on many semiconductor surfaces, such as SiC, Si or GaN. Change of terrace width or step orientation particle diffusion jump barriers leads either to step meandering or surface roughening. Additionally it is shown that step behavior changes with the Schwoebel barrier height. Furthermore, simulations under conditions corresponding to very high external particle flux result in triangular islands grown at the terraces. All structures, emerging in the simulations, have their corresponding cases in the experimental results.