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Sougata Mardanya

Sougata Mardanya appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-el

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Published work

8 published item(s)

preprint2022arXiv

Evidence for electronic signature of magnetic transition in topological magnet HoSbTe

Topological insulators with intrinsic magnetic order are emerging as an exciting platform to realize fundamentally new excitations from topological quantum states of matter. To study these systems and their physics, people have proposed a variety of magnetic topological insulator systems, including HoSbTe, an antiferromagnetic weak topological insulator candidate. In this work, we use scanning tunneling microscopy to probe the electronic structure of HoSbTe with antiferromagnetic and ferromagnetic orders that are tuned by applying an external magnetic field. Although around the Fermi energy, we find minor differences between the quasi-particle interferences under the ferromagnetic and antiferromagnetic orders, deep inside the valance region, a new quasi-particle interference signal emerges with ferromagnetism. This observation is consistent with our first-principles calculations indicating the magnetism-driven transition of the electronic states in this spin-orbit coupled topological magnet.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Magnetically tunable Dirac and Weyl fermions in the Zintl materials family

Recent classification efforts encompassing crystalline symmetries have revealed rich possibilities for solid-state systems to support a tapestry of exotic topological states. However, finding materials that realize such states remains a daunting challenge. Here we show how the interplay of topology, symmetry, and magnetism combined with doping and external electric and magnetic field controls can be used to drive the previously unreported SrIn$_2$As$_2$ materials family into a variety of topological phases. Our first-principles calculations and symmetry analysis reveal that SrIn$_2$As$_2$ is a dual topological insulator with $Z_2=(1;000)$ and mirror Chern number $C_M= -1$. Its isostructural and isovalent antiferromagnetic cousin EuIn$_2$As$_2$ is found to be an axion insulator with $Z_4= 2$. The broken time-reversal symmetry via Eu doping in Sr$_{1-x}$Eu$_x$In$_2$As$_2$ results in a higher-order or topological crystalline insulator state depending on the orientation of the magnetic easy axis. We also find that antiferromagnetic EuIn$_2$P$_2$ is a trivial insulator with $Z_4= 0$, and that it undergoes a magnetic field-driven transition to an ideal Weyl fermion or nodal fermion state with $Z_4= 1$ with applied magnetic field. Our study identifies Sr$_{1-x}$Eu$_x$In$_2$(As, P)$_2$ as a new tunable materials platform for investigating the physics and applications of Weyl and nodal fermions in the scaffolding of crystalline and axion insulator states.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Magnetic field-dependent resistance crossover and logarithmic to non-saturating magnetoresistance in topological insulator Bi$_2$Te$_3$

We report a metal-insulator like transition in single crystalline 3D topological insulator Bi2Te3 at a temperature of 230K in presence of an external magnetic field applied normal to the surface. This transition becomes more prominent at larger magnetic field strength with the residual resistance value increasing linearly with the magnetic field. At low temperature, the magnetic field dependence of the magnetoresistance shows a transition from logarithmic to linear behavior and the onset magnetic field value for this transition decreases with increasing temperature. The logarithmic magnetoresistance indicates the weak anti-localization of the surface Dirac electrons while the high temperature behavior originates from the bulk carriers due to intrinsic impurities. At even higher temperatures beyond~230 K, a completely classical Lorentz model type quadratic behavior of the magnetoresistance is observed. We also show that the experimentally observed anomalies at ~230K in the magneto-transport properties do not originate from any stacking fault in Bi2Te3.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Magnetotransport properties of the topological nodal-line semimetal CaCdSn

Topological nodal-line semimetals support protected band crossings which form nodal lines or nodal loops between the valence and conduction bands and exhibit novel transport phenomena. Here we address the topological state of the nodal-line semimetal candidate material, CaCdSn, and report magnetotransport properties of its single crystals grown by the self-flux method. Our first-principles calculations show that the electronic structure of CaCdSn harbors a single nodal loop around the $Γ$ point in the absence of spin-orbit coupling (SOC) effects. The nodal crossings in CaCdSn are found to lie above the Fermi level and yield a Fermi surface that consists of both electron and hole pockets. CaCdSn exhibits high mobility ($μ\approx 3.44\times 10^4$ cm$^2$V$^{-1}$s$^{-1}$) and displays a field-induced metal-semiconductor like crossover with a plateau in resistivity at low temperature. We observe an extremely large and quasilinear non-saturating transverse as well as longitudinal magnetoresistance (MR) at low temperatures ($\approx 7.44\times 10^3 \%$ and $\approx 1.71\times 10^3\%$, respectively, at 4K). We also briefly discuss possible reasons behind such a large quasilinear magnetoresistance and its connection with the nontrivial band structure of CaCdSn.

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preprint2020arXiv

Saddle-point von Hove singularity and dual topological insulator state in Pt$_2$HgSe$_3$

Saddle-point van Hove singularities in the topological surface states are interesting because they can provide a new pathway for accessing exotic correlated phenomena in topological materials. Here, based on first-principles calculations combined with a $\mathbf {k \cdot p}$ model Hamiltonian analysis, we show that the layered platinum mineral jacutingaite (Pt$_2$HgSe$_3$) harbours saddle-like topological surface states with associated van Hove singularities. Pt$_2$HgSe$_3$ is shown to host two distinct types of nodal lines without spin-orbit coupling (SOC) which are protected by combined inversion ($I$) and time-reversal ($T$) symmetries. Switching on the SOC gaps out the nodal lines and drives the system into a topological insulator state with nonzero weak topological invariant $Z_2=(0;001)$ and mirror Chern number $n_M=2$. Surface states on the naturally cleaved (001) surface are found to be nontrivial with a unique saddle-like energy dispersion with type II van Hove singularities. We also discuss how modulating the crystal structure can drive Pt$_2$HgSe$_3$ into a Dirac semimetal state with a pair of Dirac points. Our results indicate that Pt$_2$HgSe$_3$ is an ideal candidate material for exploring the properties of topological insulators with saddle-like surface states.

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preprint2020arXiv

Topological Dirac Semimetal Phase in Bismuth Based Anode Materials for Sodium-Ion Batteries

Bismuth has recently attracted interest in connection with Na-ion battery anodes due to its high volumetric capacity. It reacts with Na to form Na$_3$Bi which is a prototypical Dirac semimetal with a nontrivial electronic structure. Density-functional-theory based first-principles calculations are playing a key role in understanding the fascinating electronic structure of Na$_3$Bi and other topological materials. In particular, the strongly-constrained-and-appropriately-normed (SCAN) meta-generalized-gradient-approximation (meta-GGA) has shown significant improvement over the widely used generalized-gradient-approximation (GGA) scheme in capturing energetic, structural, and electronic properties of many classes of materials. Here, we discuss the electronic structure of Na$_3$Bi within the SCAN framework and show that the resulting Fermi velocities and {\it s}-band shift around the $Γ$ point are in better agreement with experiments than the corresponding GGA predictions. SCAN yields a purely spin-orbit-coupling (SOC) driven Dirac semimetal state in Na$_3$Bi in contrast with the earlier GGA results. Our analysis reveals the presence of a topological phase transition from the Dirac semimetal to a trivial band insulator phase in Na$_{3}$Bi$_{x}$Sb$_{1-x}$ alloys as the strength of the SOC varies with Sb content, and gives insight into the role of the SOC in modulating conduction properties of Na$_3$Bi.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Four allotropes of semiconducting layered Arsenic which switch into a topological insulator via an electric field: A computational study

We propose four different thermodynamically stable structural phases of arsenic monolayers based on ab-initio density functional theory calculations all of which undergo a topological phase transition on application of a perpendicular electric field. All the four arsenic monolayer allotropes have a wide band gap, varying from 1.21 eV to 3.0 eV (based on GW calculations), and in general they undergo a metal-insulator quantum phase transition on application of uniaxial in-layer strain. Additionally an increasing transverse electric field induces band-inversion at the Γ point in all four monolayer allotropes, leading to a nontrivial topological phase (insulating for three and metallic for one allotrope), characterized by the switching of the Z2 index, from 0 (before band inversion) to 1 (after band inversion). The topological phase tuned by the transverse electric field, should support spin-separated gapless edge states which should manifest in quantum spin Hall effect.

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preprint2015arXiv

Enhancement of tunneling density of states at a Y junction of spin-1/2 Tomonaga Luttinger liquid wires

We calculate the tunneling density of states (TDOS) in a three wire junction of interacting spin-1/2 electrons, and find an anomalous enhancement of the TDOS in the zero bias limit, even for repulsive interactions for several bosonic fixed points. This enhancement is physically related to the reflection of holes from the junction for incident electrons, and it occurs only in the vicinity of the junction ($x < v_{\rm min}/2ω$ where $v_{\rm min}$ is the minimum of the velocity of charge or spin excitations and $ω$ is the bias frequency), crossing over to the bulk value which is always suppressed, at larger distances. The TDOS exponent can be directly probed in a STM experiment by measuring the differential tunneling conductance as a function of either the bias voltage or temperature as done in C. Blumenstein et al. Nature Physics 7, 776 (2011).

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