Researcher profile

Sirui Hu

Sirui Hu contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2023arXiv

FedSSC: Shared Supervised-Contrastive Federated Learning

Federated learning is widely used to perform decentralized training of a global model on multiple devices while preserving the data privacy of each device. However, it suffers from heterogeneous local data on each training device which increases the difficulty to reach the same level of accuracy as the centralized training. Supervised Contrastive Learning which outperform cross-entropy tries to minimizes the difference between feature space of points belongs to the same class and pushes away points from different classes. We propose Supervised Contrastive Federated Learning in which devices can share the learned class-wise feature spaces with each other and add the supervised-contrastive learning loss as a regularization term to foster the feature space learning. The loss tries to minimize the cosine similarity distance between the feature map and the averaged feature map from another device in the same class and maximizes the distance between the feature map and that in a different class. This new regularization term when added on top of the moon regularization term is found to outperform the other state-of-the-art regularization terms in solving the heterogeneous data distribution problem.

preprint2022arXiv

Characterization of GaN-based HEMTs Down to 4.2 K for Cryogenic Applications

The cryogenic performance of GaN-based HEMTs (high-electron-mobility transistors) is systematically investigated by the direct current (DC) and low-frequency noise (LFN) characteristics within the temperature (T) range from 300 K to 4.2 K. The important electrical merits of the device, including drain saturation current (IDsat), on-resistance (RON), transductance, subthreshold swing (SS), gate leakage current, and Schottky barrier height, are comprehensively characterized and their temperature-dependent behavior was statistically analyzed. In addition, the LFN of the device shows an evident behavior of 1/f noise from 10 Hz to 10 kHz in the measured temperature range and can be significantly reduced at cryogenic temperature. These results are of great importance to motivate further studies into the GaN-based cryo-devices and systems.