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Bolun Zeng

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physics.app-ph

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preprint2022arXiv

Characterization of GaN-based HEMTs Down to 4.2 K for Cryogenic Applications

The cryogenic performance of GaN-based HEMTs (high-electron-mobility transistors) is systematically investigated by the direct current (DC) and low-frequency noise (LFN) characteristics within the temperature (T) range from 300 K to 4.2 K. The important electrical merits of the device, including drain saturation current (IDsat), on-resistance (RON), transductance, subthreshold swing (SS), gate leakage current, and Schottky barrier height, are comprehensively characterized and their temperature-dependent behavior was statistically analyzed. In addition, the LFN of the device shows an evident behavior of 1/f noise from 10 Hz to 10 kHz in the measured temperature range and can be significantly reduced at cryogenic temperature. These results are of great importance to motivate further studies into the GaN-based cryo-devices and systems.

preprint2022arXiv

Design of Cryogenic Fully Differential Gain Boosting-OTA by the $g_{m}/I_{d}$ methodology used for a 14 bit Pipelined-SAR ADC

Quantum computing (QC) requires cryogenic electronic circuits as control and readout sub-systems of quantum chips to meet the qubit scale-up challenges.At this temperature,MOSFETs transistors exhibition many changes such as higher threshold voltage,higher mobility,and steeper substhreshold slope.We present a cryogenic fully differential gain boosting-OTA used for a 14 bit Pipelined-SAR ADC operating at 4.2K as the readout circuit for semiconductor-based quantum computing system.Using $g_{m}/I_{d}$ methodology to get pre-computed lookup tables based on the cryogenic 110nm BSIM4 model.The proposed OTA achieves very high unity-gain [email protected] and open-loop low frequency [email protected] total power consumption is 2.66mW at 4.2K,and a setting accuracy better than 0.01\% with $f_{-3dB}$ of 37MHz in a closed-loop application.

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Bolun Zeng

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2 publications

Characterization of GaN-based HEMTs Down to 4.2 K for Cryogenic Applications

Design of Cryogenic Fully Differential Gain Boosting-OTA by the $g_{m}/I_{d}$ methodology used for a 14 bit Pipelined-SAR ADC

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Bolun Zeng

Research overview

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2 publications

Characterization of GaN-based HEMTs Down to 4.2 K for Cryogenic Applications

Design of Cryogenic Fully Differential Gain Boosting-OTA by the gm/Idg_{m}/I_{d}gm​/Id​ methodology used for a 14 bit Pipelined-SAR ADC

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Design of Cryogenic Fully Differential Gain Boosting-OTA by the $g_{m}/I_{d}$ methodology used for a 14 bit Pipelined-SAR ADC