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Sinisa Coh

Sinisa Coh contributes to research discovery and scholarly infrastructure.

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Published work

15 published item(s)

preprint2022arXiv

Magneto-optical Kerr spectra of gold induced by spin accumulation

We report the magneto optic Kerr effect (MOKE) angle of Au magnetically excited by spin accumulation. We perform time resolved polar MOKE measurements on Au/Co heterostructures. In our experiment, the ultrafast optical excitation of the Co drives spin accumulation into an adjacent Au layer. The spin accumulation, together with spin-orbit coupling, leads to non-zero terms in the off-diagonal conductivity tensor of Au, which we measure by recording the polarization and ellipticity of light reflected from the Au surface for photon energies between 1.3 and 3.1 eV. At energies near the interband transition threshold of Au, the Kerr rotation per A/m exceeds 1 urad. Typical values for Kerr rotation per moment in transition ferromagnetic metals like Ni are < 10 nrad per A/m, while predicted values for heavy metals like Pt or W are < 13 nrad per A/m. The exceptional sensitivity of the optical properties of Au to spin magnetic moments make Au to be an exceptionally sensitive optical magnetometer, with potential applications in the development of optospintronic technologies.

preprint2022arXiv

Nonadiabatic Born effective charges in metals and the Drude weight

In insulators, Born effective charges describe the electrical polarization induced by the displacement of individual atomic sublattices. Such a physical property is at first sight irrelevant for metals and doped semiconductors, where the macroscopic polarization is ill-defined. Here we show that, in clean conductors, going beyond the adiabatic approximation results in nonadiabatic Born effective charges that are well defined in the low-frequency limit. In addition, we find that the sublattice sum of the nonadiabatic Born effective charges does not vanish as it does in the insulating case, but instead is proportional to the Drude weight. We demonstrate these formal results with density functional perturbation theory calculations of Al, and electron-doped SnS$_2$ and SrTiO$_3$.

preprint2021arXiv

Large cross-polarized Raman signal in CrI$_3$: A first-principles study

We find unusually large cross-polarized (and anti-symmetric) Raman signature of A$_{\rm g}$ phonon mode in CrI$_3$, in agreement with experiments. The signal is present only when the following three effects are considered in concert: ferromagnetism on Cr atoms, spin-orbit interaction, and resonant effects. Somewhat surprisingly, we find that the relevant spin-orbit interaction potential originates from iodine atoms, despite magnetism being mostly on chromium atoms. We analyze the Raman signature as a function of magnetic order, the direction of the magnetic moment, energy and polarization of light used for Raman scattering, as well as carrier lifetime. In addition to a strong cross-polarized Raman signal, we also find unusually strong phonon modulated magneto-optical Kerr effect (MOKE) in CrI$_3$.

preprint2020arXiv

Comparison of GW band structure to semi-empirical approach for an FeSe monolayer

We present the G$_0$W$_0$ band structure, core levels, and deformation potential of monolayer FeSe in the paramagnetic phase based on a starting mean field of the Kohn Sham density functional theory (DFT) with the PBE functional. We find the GW correction increases the bandwidth of the states forming the $M$ pocket near the Fermi energy, while leaving the $Γ$ pocket roughly unchanged. We then compare the G$_0$W$_0$ quasiparticle band energies with the band structure from a simple empirical +A approach, which was recently proposed to capture the renormalization of the electron-phonon interaction going beyond DFT in FeSe, when used as a starting point in density functional perturbation theory (DFPT). We show that this empirical correction succeeds in approximating the GW non-local and dynamical self energy in monolayer FeSe and reproduces the GW band structure near the Fermi surface, the core energy levels, and the deformation potential (electron-phonon coupling).

preprint2020arXiv

Hydrogen plasma favored modification of anatase TiO$_2$ (001) surface with desirable water splitting performance

We show that when TiO$_2$ anatase (001) is exposed to hydrogen plasma that the pristine surface termination becomes unfavorable to another, slightly modified, surface. On this modified surface the topmost TiO$_2$ layer is intact but out of registry with the bottom layers. Nevertheless, the modified surface has significantly improved ability to split water under exposure to sunlight. We show by explicit calculation of the water splitting reaction that the energy barrier that exists on a pristine surface is not present on the modified surface. The valence band maximum of the surface is raised relative to the pristine surface, which is a favorable way of adjusting the band gap in TiO$_2$ to the solar spectrum.

preprint2020arXiv

Signature of multilayer graphene strain-controlled domain walls in quantum Hall effect

Domain walls, topological defects that define the frontier between regions of different stacking in multilayer graphene, have proved to host exciting physics. The ability of tuning these topological defects in-situ in an electronic transport experiment brings a wealth of possibilities in terms of fundamental understanding of domain walls as well as for electronic applications. Here, we demonstrate through a MEMS (micro-electromechanical system) actuator and magnetoresistance measurements the effect of domain walls in multilayer graphene quantum Hall effect. Reversible and controlled uniaxial strain triggers these topological defects, manifested as new quantum Hall effect plateaus as well as a discrete and reversible modulation of the current across the device. Our findings are supported by theoretical calculations and constitute the first indication of the in-situ tuning of topological defects in multilayer graphene probed through electronic transport, opening the way to the use of reversible topological defects in electronic applications.

preprint2013arXiv

Atomically perfect torn graphene edges and their reversible reconstruction

The atomic structure of graphene edges is critical in determining the electrical, magnetic, and chemical properties of truncated graphene structures, notably nanoribbons. Unfortunately, graphene edges are typically far from ideal and suffer from atomic-scale defects, structural distortion, and unintended chemical functionalization, leading to unpredictable properties. Here we report that graphene edges fabricated by electron-beam-initiated mechanical rupture or tearing in high vacuum are clean and largely atomically perfect, oriented in either the armchair or zigzag direction. Via aberration-corrected transmission electron microscopy, we demonstrate reversible and extended pentagon-heptagon (5-7) reconstruction at zigzag edges, and explore experimentally and theoretically the dynamics of the transitions between configuration states. Good theoretical-experimental agreement is found for the flipping rates between 5-7 and 6-6 zigzag edge states. Our study demonstrates that simple ripping is remarkably effective in producing atomically clean, ideal terminations thus providing a valuable tool for realizing atomically-tailored graphene and facilitating meaningful experimental study.

preprint2013arXiv

Corner states of topological fullerenes

The unusual electronic properties of the quantum spin Hall or Chern insulator become manifest in the form of robust edge states when samples with boundaries are studied. In this work, we ask if and how the topologically non-trivial electronic structure of these two-dimensional systems can be passed on to their zero-dimensional relatives, namely fullerenes or other closed-cage molecules. To address this question, we study Haldane&#39;s honeycomb lattice model on polyhedral nano-surfaces. We find that for sufficiently large surfaces characteristic corner states appear for parameters for which the planar model displays a quantized Hall effect. In the electronic structure, these corner states show up as in-gap modes which are well separated from the quasi-continuum of states. We discuss the role of finite size effects and how the coupling between the corner states lifts the degeneracy in a characteristic way determined by the combined Berry phases which leads to an effective magnetic monopole of charge 2 at the center of the nano-surface. Experimental implications for fullerenes in the large spin-orbit regime are also pointed out.

preprint2013arXiv

Theory of the Raman spectrum of rotated double-layer graphene

We study theoretically the Raman spectrum of the rotated double-layer graphene, consisting of two graphene layers rotated with respect to each other by an arbitrary angle θ. We find a relatively simple dependence of the Raman G peak intensity on the angle θ. On the other hand, the Raman 2D peak position, intensity, and width show a much more complicated dependence on the angle θ. We account for all of these effects, including dependence on the incoming photon energy, in good agreement with the experimental data. We find that it is sufficient to include the interaction between the graphene layers on the electronic degrees of freedom (resulting in the occurrence of van Hove singularities in the density of states). We assume that the phonon degrees of freedom are unaffected by the interaction between the layers. Furthermore, we decompose the Raman 2D peak into two components having very different linewidths; these widths are almost independent of the angle θ. The change in the intensity and the peak position of one of these two components gives insight into the dependence of the overall Raman 2D peak features as a function of the angle θ. Additionally, we show regions in the phonon spectrum giving rise to the Raman 2D peak signal. This work provides an insight into the interplay between the mechanical degree of freedom (angle θ) and the electronic degrees of freedom (singularities in the density of states) in rotated double-layer graphene. Additionally, this work provides a way to establish experimentally the value of the rotation angle θusing Raman spectroscopy measurement. This procedure becomes even more robust if one repeats the Raman spectroscopy measurement with a different incoming photon energy.

preprint2012arXiv

Full magnetoelectric response of Cr2O3 from first principles

The linear magnetoelectric response of Cr2O3 at zero temperature is calculated from first principles by tracking the change in magnetization under a macroscopic electric field. Both the spin and the orbital contributions to the induced magnetization are computed, and in each case the response is decomposed into lattice and electronic parts. We find that the transverse response is dominated by the spin-lattice and spin-electronic contributions, whose calculated values are consistent with static and optical magnetoelectric measurements. In the case of the longitudinal response, orbital contributions dominate over spin contributions, but the net calculated longitudinal response remains much smaller than the experimentally measured one at low temperatures. We also discuss the absolute sign of the magnetoelectric coupling in the two time-reversed magnetic domains of Cr2O3.

preprint2012arXiv

Raman spectroscopy study of rotated double-layer graphene: Misorientation-angle dependence of electronic structure

We present a systematic Raman study of unconventionally-stacked double-layer graphene, and find that the spectrum strongly depends on the relative rotation angle between layers. Rotation-dependent trends in the position, width and intensity of graphene 2D and G peaks are experimentally established and accounted for theoretically. Our theoretical analysis reveals that changes in electronic band structure due to the interlayer interaction, such as rotational-angle dependent Van Hove singularities, are responsible for the observed spectra features. Our combined experimental and theoretical study provides a deeper understanding of the electronic band structure of rotated double-layer graphene, and leads to a practical way to identify and analyze rotation angles of misoriented double-layer graphene.

preprint2011arXiv

Large isosymmetric reorientation of oxygen octahedra rotation axes in epitaxially strained perovskites

Using first-principles density functional theory calculations, we discover an anomalously large bi-axial strain-induced octahedral rotation axis reorientation in orthorhombic perovskites with tendency towards rhombohedral symmetry. The transition between crystallographically equivalent (isosymmetric) structures with different octahedral rotation magnitudes originates from strong strain--octahedral rotation coupling available to perovskites and the energetic hierarchy among competing octahedral tilt patterns. By elucidating these criteria, we suggest many functional perovskites would exhibit the transition in thin film form, thus offering a new landscape in which to tailor highly anisotropic electronic responses.

preprint2010arXiv

Chern-Simons orbital magnetoelectric coupling in generic insulators

We present a Wannier-based method to calculate the Chern-Simons orbital magnetoelectric coupling in the framework of first-principles density-functional theory. In view of recent developments in connection with strong Z2 topological insulators, we anticipate that the Chern-Simons contribution to the magnetoelectric coupling could, in special cases, be as large or larger than the total magnetoelectric coupling in known magnetoelectrics like Cr2O3. The results of our calculations for the ordinary magnetoelectrics Cr2O3, BiFeO3 and GdAlO3 confirm that the Chern-Simons contribution is quite small in these cases. On the other hand, we show that if the spatial inversion and time-reversal symmetries of the Z2 topological insulator Bi2Se3 are broken by hand, large induced changes appear in the Chern-Simons magnetoelectric coupling.

preprint2010arXiv

Si-compatible candidates for high-K dielectrics with the Pbnm perovskite structure

We analyze both experimentally (where possible) and theoretically from first-principles the dielectric tensor components and crystal structure of five classes of Pbnm perovskites. All of these materials are believed to be stable on silicon and are therefore promising candidates for high-K dielectrics. We also analyze the structure of these materials with various simple models, decompose the lattice contribution to the dielectric tensor into force constant matrix eigenmode contributions, explore a peculiar correlation between structural and dielectric anisotropies in these compounds and give phonon frequencies and infrared activities of those modes that are infrared-active. We find that CaZrO_3, SrZrO_3, LaHoO_3, and LaYO_3 are among the most promising candidates for high-K dielectrics among the compounds we considered.

preprint2010arXiv

Theory of orbital magnetoelectric response

We extend the recently-developed theory of bulk orbital magnetization to finite electric fields, and use it to calculate the orbital magnetoelectric response of periodic insulators. Working in the independent-particle framework, we find that the finite-field orbital magnetization can be written as a sum of three gauge-invariant contributions, one of which has no counterpart at zero field. The extra contribution is collinear with and explicitly dependent on the electric field. The expression for the orbital magnetization is suitable for first-principles implementations, allowing to calculate the magnetoelectric response coefficients by numerical differentiation. Alternatively, perturbation-theory techniques may be used, and for that purpose we derive an expression directly for the linear magnetoelectric tensor by taking the first field-derivative analytically. Two types of terms are obtained. One, the `Chern-Simons&#39; term, depends only on the unperturbed occupied orbitals and is purely isotropic. The other, `Kubo&#39; term, involves the first-order change in the orbitals and gives isotropic as well as anisotropic contributions to the response. In ordinary magnetoelectric insulators both terms are generally present, while in strong Z2 topological insulators only the former type is allowed, and is quantized. In order to validate the theory we have calculated under periodic boundary conditions the linear magnetoelectric coupling for a 3-D tight-binding model of an ordinary magnetoelectric insulator, using both the finite-field and perturbation-theory expressions. The results are in excellent agreement with calculations on bounded samples.