BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

A. Zettl

A. Zettl appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

Catalog footprint

What is connected

15works
3topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

15 published item(s)

preprint2014arXiv

Controlled Growth of a Line Defect in Graphene and Implications for Gate-Tunable Valley Filtering

Atomically precise tailoring of graphene can enable unusual transport pathways and new nanometer-scale functional devices. Here we describe a recipe for the controlled production of highly regular "5-5-8" line defects in graphene by means of simultaneous electron irradiation and Joule heating by applied electric current. High-resolution transmission electron microscopy reveals individual steps of the growth process. Extending earlier theoretical work suggesting valley-discriminating capabilities of a graphene 5-5-8 line defect, we perform first-principles calculations of transport and find a strong energy dependence of valley polarization of the charge carriers across the defect. These findings inspire us to propose a compact electrostatically gated "valley valve" device, a critical component for valleytronics.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Optimizing Broadband Terahertz Modulation with Hybrid Graphene/Metasurface Structures

We demonstrate efficient terahertz (THz) modulation by coupling graphene strongly with a broadband THz metasurface device. This THz metasurface, made of periodic gold slit arrays, shows near unity broadband transmission, which arises from coherent radiation of the enhanced local-field in the slits. Utilizing graphene as an active load with tunable conductivity, we can significantly modify the local-field enhancement and strongly modulate the THz wave transmission. This hybrid device also provides a new platform for future nonlinear THz spectroscopy study of graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Photo-induced Doping in Graphene/Boron Nitride Heterostructures

The design of stacks of layered materials in which adjacent layers interact by van der Waals forces[1] has enabled the combination of various two-dimensional crystals with different electrical, optical and mechanical properties, and the emergence of novel physical phenomena and device functionality[2-8]. Here we report photo-induced doping in van der Waals heterostructures (VDHs) consisting of graphene and boron nitride layers. It enables flexible and repeatable writing and erasing of charge doping in graphene with visible light. We demonstrate that this photo-induced doping maintains the high carrier mobility of the graphene-boron nitride (G/BN) heterostructure, which resembles the modulation doping technique used in semiconductor heterojunctions, and can be used to generate spatially-varying doping profiles such as p-n junctions. We show that this photo-induced doping arises from microscopically coupled optical and electrical responses of G/BN heterostructures, which includes optical excitation of defect transitions in boron nitride, electrical transport in graphene, and charge transfer between boron nitride and graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Atomically perfect torn graphene edges and their reversible reconstruction

The atomic structure of graphene edges is critical in determining the electrical, magnetic, and chemical properties of truncated graphene structures, notably nanoribbons. Unfortunately, graphene edges are typically far from ideal and suffer from atomic-scale defects, structural distortion, and unintended chemical functionalization, leading to unpredictable properties. Here we report that graphene edges fabricated by electron-beam-initiated mechanical rupture or tearing in high vacuum are clean and largely atomically perfect, oriented in either the armchair or zigzag direction. Via aberration-corrected transmission electron microscopy, we demonstrate reversible and extended pentagon-heptagon (5-7) reconstruction at zigzag edges, and explore experimentally and theoretically the dynamics of the transitions between configuration states. Good theoretical-experimental agreement is found for the flipping rates between 5-7 and 6-6 zigzag edge states. Our study demonstrates that simple ripping is remarkably effective in producing atomically clean, ideal terminations thus providing a valuable tool for realizing atomically-tailored graphene and facilitating meaningful experimental study.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Charge-Carrier Screening in Single-Layer Graphene

The effect of charge-carrier screening on the transport properties of a neutral graphene sheet is studied by directly probing its electronic structure. We find that the Fermi velocity, Dirac point velocity, and overall distortion of the Dirac cone are renormalized due to the screening of the electron-electron interaction in an unusual way. We also observe an increase of the electron mean free path due to the screening of charged impurities. These observations help us to understand the basis for the transport properties of graphene, as well as the fundamental physics of these interesting electron-electron interactions at the Dirac point crossing.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electronic and plasmonic phenomena at graphene grain boundaries

Graphene, a two-dimensional honeycomb lattice of carbon atoms, is of great interest in (opto)electronics and plasmonics and can be obtained by means of diverse fabrication techniques, among which chemical vapor deposition (CVD) is one of the most promising for technological applications. The electronic and mechanical properties of CVD-grown graphene depend in large part on the characteristics of the grain boundaries. However, the physical properties of these grain boundaries remain challenging to characterize directly and conveniently. Here, we show that it is possible to visualize and investigate the grain boundaries in CVD-grown graphene using an infrared nano-imaging technique. We harness surface plasmons that are reflected and scattered by the graphene grain boundaries, thus causing plasmon interference. By recording and analyzing the interference patterns, we can map grain boundaries for a large area CVD-grown graphene film and probe the electronic properties of individual grain boundaries. Quantitative analysis reveals that grain boundaries form electronic barriers that obstruct both electrical transport and plasmon propagation. The effective width of these barriers (~10-20 nm) depends on the electronic screening and it is on the order of the Fermi wavelength of graphene. These results uncover a microscopic mechanism that is responsible for the low electron mobility observed in CVD-grown graphene, and suggest the possibility of using electronic barriers to realize tunable plasmon reflectors and phase retarders in future graphene-based plasmonic circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electrostatic Graphene Loudspeaker

Graphene has extremely low mass density and high mechanical strength, key qualities for efficient wide-frequency-response electrostatic audio speaker design. Low mass ensures good high frequency response, while high strength allows for relatively large free-standing diaphragms necessary for effective low frequency response. Here we report on construction and testing of a miniaturized graphene-based electrostatic audio transducer. The speaker/earphone is straightforward in design and operation and has excellent frequency response across the entire audio frequency range (20HZ - 20kHz), with performance matching or surpassing commercially available audio earphones.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Imprint of transition metal d-orbitals on graphene Dirac cone

We investigate the influence of SiO2, Au, Ag, Cu, and Pt substrates on the Raman spectrum of graphene. Experiments reveal particularly strong modifications to the intensity, position, width, and shape of the Raman signal of graphene on platinum, compared to that of suspended graphene. The modifications strongly depend on the relative orientation of the graphene and platinum lattices. These observations are theoretically investigated and shown to originate from hybridization of electronic states in graphene and d-orbitals in platinum. It is expected that, quite generally, hybridization between graphene and any material with d-orbitals near the Fermi level will result in an imprint on the graphene Dirac cone which depends sensitively on the relative orientation of the respective lattices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Surface Atom Motion to Move Iron Nanocrystals through Constrictions in Carbon Nanotubes under the Action of an Electric Current

Under the application of electrical currents, metal nanocrystals inside carbon nanotubes can be bodily transported. We examine experimentally and theoretically how an iron nanocrystal can pass through a constriction in the carbon nanotube with a smaller cross-sectional area than the nanocrystal itself. Remarkably, through in situ transmission electron imaging and diffraction, we find that, while passing through a constriction, the nanocrystal remains largely solid and crystalline and the carbon nanotube is unaffected. We account for this behavior by a pattern of iron atom motion and rearrangement on the surface of the nanocrystal. The nanocrystal motion can be described with a model whose parameters are nearly independent of the nanocrystal length, area, temperature, and electromigration force magnitude. We predict that metal nanocrystals can move through complex geometries and constrictions, with implications for both nanomechanics and tunable synthesis of metal nanoparticles.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Raman spectroscopy study of rotated double-layer graphene: Misorientation-angle dependence of electronic structure

We present a systematic Raman study of unconventionally-stacked double-layer graphene, and find that the spectrum strongly depends on the relative rotation angle between layers. Rotation-dependent trends in the position, width and intensity of graphene 2D and G peaks are experimentally established and accounted for theoretically. Our theoretical analysis reveals that changes in electronic band structure due to the interlayer interaction, such as rotational-angle dependent Van Hove singularities, are responsible for the observed spectra features. Our combined experimental and theoretical study provides a deeper understanding of the electronic band structure of rotated double-layer graphene, and leads to a practical way to identify and analyze rotation angles of misoriented double-layer graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Boron Nitride Substrates for High Mobility Chemical Vapor Deposited Graphene

Chemical vapor deposited (CVD) graphene is often presented as a scalable solution to graphene device fabrication, but to date such graphene has exhibited lower mobility than that produced by exfoliation. Using a boron nitride underlayer, we achieve mobilities as high as 37,000 cm^2/Vs, an order of magnitude higher than commonly reported for CVD graphene and better than most exfoliated graphene. This result demonstrates that the barrier to scalable, high mobility CVD graphene is not the growth technique but rather the choice of a substrate that minimizes carrier scattering.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Multiply Folded Graphene

The folding of paper, hide, and woven fabric has been used for millennia to achieve enhanced articulation, curvature, and visual appeal for intrinsically flat, two-dimensional materials. For graphene, an ideal two-dimensional material, folding may transform it to complex shapes with new and distinct properties. Here, we present experimental results that folded structures in graphene, termed grafold, exist, and their formations can be controlled by introducing anisotropic surface curvature during graphene synthesis or transfer processes. Using pseudopotential-density functional theory calculations, we also show that double folding modifies the electronic band structure of graphene. Furthermore, we demonstrate the intercalation of C60 into the grafolds. Intercalation or functionalization of the chemically reactive folds further expands grafold's mechanical, chemical, optical, and electronic diversity.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Instability of two dimensional graphene: Breaking sp2 bonds with soft X-rays

We study the stability of various kinds of graphene samples under soft X-ray irradiation. Our results show that in single layer exfoliated graphene (a closer analogue to two dimensional material), the in-plane carbon-carbon bonds are unstable under X-ray irradiation, resulting in nanocrystalline structures. As the interaction along the third dimension increases by increasing the number of graphene layers or through the interaction with the substrate (epitaxial graphene), the effect of X-ray irradiation decreases and eventually becomes negligible for graphite and epitaxial graphene. Our results demonstrate the importance of the interaction along the third dimension in stabilizing the long range in-plane carbon-carbon bonding, and suggest the possibility of using X-ray to pattern graphene nanostructures in exfoliated graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Tunable Superconducting Phase Transition in Metal-Decorated Graphene Sheets

Using typical experimental techniques it is difficult to separate the effects of carrier density and disorder on the superconducting transition in two dimensions. Using a simple fabrication procedure based on metal layer dewetting, we have produced graphene sheets decorated with a non-percolating network of nanoscale tin clusters. These metal clusters both efficiently dope the graphene substrate and induce long-range superconducting correlations. This allows us to study the superconducting transition at fixed disorder and variable carrier concentration. We find that despite structural inhomogeneity on mesoscopic length scales (10-100 nm), this material behaves electronically as a homogenous dirty superconductor. Our simple self-assembly method establishes graphene as an ideal tunable substrate for studying induced two-dimensional electronic systems at fixed disorder and our technique can readily be extended to other order parameters such as magnetism.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

An Atomic-resolution nanomechanical mass sensor

Mechanical resonators are widely used as inertial balances to detect small quantities of adsorbed mass through shifts in oscillation frequency[1]. Advances in lithography and materials synthesis have enabled the fabrication of nanoscale mechanical resonators[2, 3, 4, 5, 6], which have been operated as precision force[7], position[8, 9] and mass sensors[10, 11, 12, 13, 14, 15]. Here we demonstrate a room-temperature, carbon-nanotube-based nanomechanical resonator with atomic mass resolution. This device is essentially a mass spectrometer with a mass sensitivity of 1.3 times 10^-25 kg Hz^-1/2 or, equivalently, 0.40 gold atoms Hz^-1/2. Using this extreme mass sensitivity, we observe atomic mass shot noise, which is analogous to the electronic shot noise[16, 17] measured in many semiconductor experiments. Unlike traditional mass spectrometers, nanomechanical mass spectrometers do not require the potentially destructive ionization of the test sample, are more sensitive to large molecules, and could eventually be incorporated on a chip.

0 citations0 reviewsNo code linkedOpen access