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Mauricio Terrones

Mauricio Terrones contributes to research discovery and scholarly infrastructure.

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Published work

9 published item(s)

preprint2022arXiv

Accurate Virus Identification with Interpretable Raman Signatures by Machine Learning

Rapid identification of newly emerging or circulating viruses is an important first step toward managing the public health response to potential outbreaks. A portable virus capture device coupled with label-free Raman Spectroscopy holds the promise of fast detection by rapidly obtaining the Raman signature of a virus followed by a machine learning approach applied to recognize the virus based on its Raman spectrum, which is used as a fingerprint. We present such a machine learning approach for analyzing Raman spectra of human and avian viruses. A Convolutional Neural Network (CNN) classifier specifically designed for spectral data achieves very high accuracy for a variety of virus type or subtype identification tasks. In particular, it achieves 99% accuracy for classifying influenza virus type A vs. type B, 96% accuracy for classifying four subtypes of influenza A, 95% accuracy for differentiating enveloped and non-enveloped viruses, and 99% accuracy for differentiating avian coronavirus (infectious bronchitis virus, IBV) from other avian viruses. Furthermore, interpretation of neural net responses in the trained CNN model using a full-gradient algorithm highlights Raman spectral ranges that are most important to virus identification. By correlating ML-selected salient Raman ranges with the signature ranges of known biomolecules and chemical functional groups (for example, amide, amino acid, carboxylic acid), we verify that our ML model effectively recognizes the Raman signatures of proteins, lipids and other vital functional groups present in different viruses and uses a weighted combination of these signatures to identify viruses.

preprint2022arXiv

On the origin of non-classical ripples in draped graphene sheets

Ever since the discovery of graphene and subsequent explosion of interest in single atom thick materials, studying their mechanical properties has been an active area of research. New length scales often necessitate a rethinking of physical laws, making such studies crucial for understanding and ultimately utilizing novel material properties. Here we report on the investigation of nanoscale periodic ripples in suspended, single layer graphene sheets by scanning tunneling microscopy and atomistic scale simulations. Unlike the sinusoidal ripples found in classical fabrics, we find that graphene forms triangular ripples, where bending is limited to a narrow region on the order of a few unit cell dimensions at the apex of each ripple. This non-classical bending profile results in graphene behaving like a bizarre fabric, which regardless of how it is draped, always buckles at the same angle. Investigating the origin of such non-classical mechanical properties, we find that unlike a thin classical fabric, both in-plane and out-of-plane deformations occur in a graphene sheet. These two modes of deformation compete with each other, resulting in a strain-locked optimal buckling configuration when draped. Electronically, we see that this in-plane deformation generates pseudo electric fields creating a ~3 nm wide pnp heterojunction purely by strain modulation.

preprint2020arXiv

Electric field induced metallic behavior in thin crystals of ferroelectric α-In2Se3

Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of α-In2Se3 as the channel material as opposed to the gate dielectric in conventional ferroelectric FETs (FeFETs) were prepared and measured from room to the liquid-helium temperatures. These FeSmFETs were found to yield evidence for the reorientation of the electrical polarization and an electric field induced metallic state in α-In2Se3. Our findings suggest that FeSmFETs can serve as a platform for the fundamental study of ferroelectric metals as well as the exploration of the integration of data storage and logic operations in the same device.

preprint2020arXiv

Impact of 150keV and 590keV proton irradiation on monolayer MoS2

We present a comprehensive study on the effects of proton irradiation at different energies (150 and 590 keV) with the fluence of 1x 1012 proton/cm2 on monolayer MoS2. This study not only improves our understanding of the influence of high-energy proton beams on MoS2 but also has implications for radiation-induced changes in device processing and engineering of devices from multilayer MoS2 starting material. Increasing defect density with decreasing proton irradiation energy was observed from photoluminescence spectroscopy study. These defects are attributed to sulfur vacancies observed through x-ray photoelectron spectroscopy analysis and confirmed by transmission electron microscope imaging. Scanning electron microscopy images showed the creation of grain boundaries after proton irradiation. A higher degree of surface deformation was detected with lower irradiation energies through atomic force microscopy. Inter-defect distance is increased with the increase in proton energy irradiation as estimated by transmission electron microscopy imaging. Raman spectroscopy reveals negligible structural changes in the crystal quality after the irradiation. These deformation damages due to proton irradiation are insignificant at the MoS2 layer. Based on the overall influence of low energy proton irradiation on the material characteristics, ML-MoS2 materials can be considered robust and reliable building blocks for 2D material based devices for space applications.

preprint2020arXiv

Light-controlled room temperature ferromagnetism in vanadium-doped tungsten diselenide semiconducting monolayers

Atomically thin transition metal dichalcogenide (TMD) semiconductors hold enormous potential for modern optoelectronic devices and quantum computing applications. By inducing long-range ferromagnetism (FM) in these semiconductors through the introduction of small amounts of a magnetic dopant, it is possible to extend their potential in emerging spintronic applications. Here, we demonstrate light-mediated, room temperature (RT) FM, in V-doped WS2 (V-WS2) monolayers. We probe this effect using the principle of magnetic LC resonance, which employs a soft ferromagnetic Co-based microwire coil driven near its resonance in the radio frequency (RF) regime. The combination of LC resonance with an extraordinary giant magneto-impedance effect, renders the coil highly sensitive to changes in the magnetic flux through its core. We then place the V-WS2 monolayer at the core of the coil where it is excited with a laser while its change in magnetic permeability is measured. Notably, the magnetic permeability of the monolayer is found to depend on the laser intensity, thus confirming light control of RT magnetism in this two-dimensional (2D) material. Guided by density functional calculations, we attribute this phenomenon to the presence of excess holes in the conduction and valence bands, as well as carriers trapped in the magnetic doping states, which in turn mediates the magnetization of the V-WS2 monolayer. These findings provide a unique route to exploit light-controlled ferromagnetism in low powered 2D spintronic devices capable of operating at RT.

preprint2020arXiv

Monolayer Vanadium-doped Tungsten Disulfide: A Room-Temperature Dilute Magnetic Semiconductor

Dilute magnetic semiconductors, achieved through substitutional doping of spin-polarized transition metals into semiconducting systems, enable experimental modulation of spin dynamics in ways that hold great promise for novel magneto-electric or magneto-optical devices, especially for two-dimensional systems such as transition metal dichalcogenides that accentuate interactions and activate valley degrees of freedom. Practical applications of 2D magnetism will likely require room-temperature operation, air stability, and (for magnetic semiconductors) the ability to achieve optimal doping levels without dopant aggregation. Here we describe room-temperature ferromagnetic order obtained in semiconducting vanadium-doped tungsten disulfide monolayers produced by a reliable single-step film sulfidation method across an exceptionally wide range of vanadium concentrations, up to 12 at% with minimal dopant aggregation. These monolayers develop p-type transport as a function of vanadium incorporation and rapidly reach ambipolarity. Ferromagnetism peaks at an intermediate vanadium concentration of a few atomic percent and decreases for higher concentrations, which is consistent with quenching due to orbital hybridization at closer vanadium-vanadium spacings, as supported by transmission electron microscopy, magnetometry and first-principles calculations. Room-temperature two-dimensional dilute magnetic semiconductors provide a new component to expand the functional scope of van der Waals heterostructures and bring semiconducting magnetic 2D heterostructures them into the realm of practical application.

preprint2020arXiv

Photo-degradation Protection in 2D In-Plane Heterostructures Revealed by Hyperspectral Nanoimaging: the Role of Nano-Interface 2D Alloys

Single-layer heterostructures exhibit striking quasiparticle properties and many-body interaction effects that hold promise for a range of applications. However, their properties can be altered by intrinsic and extrinsic defects, thus diminishing their applicability. Therefore, it is of paramount importance to identify defects and understand 2D materials' degradation over time using advanced multimodal imaging techniques as well as stabilize degradation via built-in interface protection. Here we implemented a liquid-phase precursor approach to synthesize 2D in-plane MoS2-WS2 heterostructures exhibiting nanoscale alloyed interfaces and map exotic interface effects during photo-degradation using a novel combination of hyperspectral tip-enhanced photoluminescence, Raman and near-field nanoscopy. Surprisingly, 2D alloyed regions exhibit remarkable thermal and photo-degradation stability providing protection against oxidation. Coupled with surface and interface strain, 2D alloy regions create localized potential wells that concentrate excitonic species via a charge carrier funneling effect. These results provide a clear understanding of the importance of 2D alloys as systems able to withstand degradation effects over time, and could be now used to stabilize optoelectronic devices based on 2D materials.

preprint2020arXiv

Wafer-scale epitaxial growth of single orientation WS2 monolayers on sapphire

Realization of wafer-scale single-crystal films of transition metal dichalcogenides (TMDs) such as tungsten sulfide requires epitaxial growth and coalescence of oriented domains to form a continuous monolayer. The domains must be oriented in the same crystallographic direction on the substrate to avoid the formation of metallic inversion domain boundaries (IDBs) which are a common feature of layered chalcogenides. Here we demonstrate fully-coalesced single orientation tungsten sulfide monolayers on 2-inch diameter c-plane sapphire by metalorganic chemical vapor deposition using a multi-step growth process. High growth temperatures and sulfur/metal ratios were required to reduce domain misorientation and achieve epitaxial tungsten sulfide monolayers with low in-plane rotational twist (0.09 deg). Transmission electron microscopy analysis reveals that the tungsten sulfide monolayers lack IDBs but instead have translational boundaries that arise when tungsten sulfide domains with slightly off-set lattices merge together. By adjusting the monolayer growth rate, the density of translational boundaries and bilayer coverage were significantly reduced. The preferred orientation of domains is attributed to the presence of steps on the sapphire surface coupled with growth conditions promote surface diffusion and oriented attachment. The transferred tungsten sulfide monolayers show neutral and charged exciton emission at 80K with negligible defect-related luminescence. Back-gated tungsten sulfide field effect transistors exhibited mobility of 16 cm2/Vs. The results demonstrate the potential of achieving wafer-scale TMD monolayers free of inversion domains with properties approaching that of exfoliated flakes.

preprint2019arXiv

Nonlinear dark-field imaging of 1D defects in monolayer dichalcogenides

Extended defects with one dimensionality smaller than that of the host, such as 2D grain boundaries in 3D materials or 1D grain boundaries in 2D materials, can be particularly damaging since they directly impede the transport of charge, spin or heat, and can introduce a metallic character into otherwise semiconducting systems. Unfortunately, a technique to rapidly and non-destructively image 1D defects in 2D materials is lacking. Scanning transmission electron microscopy (STEM), Raman, photoluminescence and nonlinear optical spectroscopies, are all extremely valuable, but current implementations suffer from low throughput and a destructive nature (STEM) or limitations in their unambiguous sensitivity at the nanoscale. Here we demonstrate that dark-field second harmonic generation (SHG) microscopy can rapidly, efficiently, and non-destructively probe grain boundaries and edges in monolayer dichalcogenides (i.e. MoSe2, MoS2 and WS2). Dark-field SHG efficiently separates the spatial components of the emitted light and exploits interference effects from crystal domains of different orientations to localize grain boundaries and edges as very bright 1D patterns through a Cerenkov-type SHG emission. The frequency dependence of this emission in MoSe2 monolayers is explained in terms of plasmon-enhanced SHG related to the defects metallic character. This new technique for nanometer-scale imaging of the grain structure, domain orientation and localized 1D plasmons in 2D different semiconductors, thus enables more rapid progress towards both applications and fundamental materials discoveries.