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Si-Qi Zhang

Si-Qi Zhang contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2026arXiv

Informationally Complete Distributed Metrology Without a Shared Reference Frame

In quantum information processing, implementing arbitrary preparations and measurements on qubits necessitates precise information to identify a specific reference frame (RF). In space quantum communication and sensing, where a shared RF is absent, the interplay between locality and symmetry imposes fundamental restrictions on physical systems. A restriction on realizable unitary operations results in a no-go theorem prohibiting the extraction of locally encoded information in RF-independent distributed metrology. Here, we propose a reversed-encoding method applied to two copies of local-unitary-invariant network states. This approach circumvents the no-go theorem while simultaneously mitigating decoherence-like noise caused by RF misalignment, thereby enabling the complete recovery of the quantum Fisher information (QFI). Furthermore, we confirm local Bell-state measurements as an optimal strategy to saturate the QFI. Our findings pave the way for the field application of distributed quantum sensing, which is inherently subject to unknown RF misalignment and was previously precluded by the no-go theorem.

preprint2020arXiv

Raman Response and Transport Properties of One-Dimensional van der Waals Tellurium Nanowires

Tellurium can form nanowires of helical atomic chains. Given their unique one-dimensional van der Waals structure, these nanowires are expected to show remarkably different physical and electronic properties than bulk tellurium. Here we show that few-chain and single-chain van der Waals tellurium nanowires can be isolated using carbon nanotube and boron nitride nanotube encapsulation. With the approach, the number of atomic chains can be controlled by the inner diameter of the nanotube. The Raman response of the structures suggests that the interaction between a single-atomic tellurium chain and a carbon nanotube is weak, and that the inter-chain interaction becomes stronger as the number of chains increases. Compared with bare tellurium nanowires on SiO2, nanowires encapsulated in boron nitride nanotubes exhibit a dramatically enhanced current-carrying capacity, with a current density of 1.5*10^8 A cm-2, which exceeds that of most semiconducting nanowires. We also use our tellurium nanowires encapsulated in boron nitride nanotubes to create field-effect transistors that have a diameter of only 2 nm.