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Researcher profile

Shu-Jen Han

Shu-Jen Han contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-el

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Published work

5 published item(s)

preprint2015arXiv

Power dissipation and electrical breakdown in black phosphorus

We report operating temperatures and heating coefficients measured in a multi-layer black phosphorus device as a function of injected electrical power. By combining micro-Raman spectroscopy and electrical transport measurements, we have observed a linear temperature increase up to 600K at a power dissipation rate of 0.896Kμm^3/mW. By further increasing the bias voltage, we determined the threshold power and temperature for electrical breakdown and analyzed the fracture in the black phosphorus layer that caused the device failure by means of scanning electron microscopy and atomic force microscopy. The results will benefit the research and development of electronics and optoelectronics based on novel two-dimensional materials.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Black Phosphorus Radio-Frequency Transistors

Few-layer and thin film forms of layered black phosphorus (BP) have recently emerged as a promising material for applications in high performance nanoelectronics and infrared optoelectronics. Layered BP thin film offers a moderate bandgap of around 0.3 eV and high carrier mobility, leading to transistors with decent on-off ratio and high on-state current density. Here, we demonstrate the gigahertz frequency operation of black phosphorus field-effect transistors for the first time. The BP transistors demonstrated here show excellent current saturation with an on-off ratio exceeding 2000. We achieved a current density in excess of 270 mA/mm and DC transconductance above 180 mS/mm for hole conduction. Using standard high frequency characterization techniques, we measured a short-circuit current-gain cut-off frequency fT of 12 GHz and a maximum oscillation frequency fmax of 20 GHz in 300 nm channel length devices. BP devices may offer advantages over graphene transistors for high frequency electronics in terms of voltage and power gain due to the good current saturation properties arising from their finite bandgap, thus enabling the future ubiquitous transistor technology that can operate in the multi-GHz frequency range and beyond.

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preprint2010arXiv

Multi-carrier Transport in Epitaxial Multi-layer Graphene

Variable-field Hall measurements were performed on epitaxial graphene grown on Si-face and C-face SiC. The carrier transport involves essentially a single-type of carrier in few-layer graphene, regardless of SiC face. However, in multi-layer graphene (MLG) grown on C-face SiC, the Hall measurements indicated the existence of several groups of carriers with distinct mobilities. Electrical transport in MLG can be properly described by invoking three independent conduction channels in parallel. Two of these are n- and p-type, while the third involves nearly intrinsic graphene. The carriers in this lightly doped channel have significantly higher mobilities than the other two.

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preprint2010arXiv

Wafer-scale Epitaxial Graphene Growth on the Si-face of Hexagonal SiC (0001) for High Frequency Transistors

Up to two layers of epitaxial graphene have been grown on the Si-face of two-inch SiC wafers exhibiting room-temperature Hall mobilities up to 1800 cm^2/Vs, measured from ungated, large, 160 micron x 200 micron Hall bars, and up to 4000 cm^2/Vs, from top-gated, small, 1 micron x 1.5 micron Hall bars. The growth process involved a combination of a cleaning step of the SiC in a Si-containing gas, followed by an annealing step in Argon for epitaxial graphene formation. The structure and morphology of this graphene has been characterized using AFM, HRTEM, and Raman spectroscopy. Furthermore, top-gated radio frequency field effect transistors (RF-FETs) with a peak cutoff frequency fT of 100 GHz for a gate length of 240 nm were fabricated using epitaxial graphene grown on the Si face of SiC that exhibited Hall mobilities up to 1450 cm^2/Vs from ungated Hall bars and 1575 cm^2/Vs from top-gated ones. This is by far the highest cut-off frequency measured from any kind of graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Nanoscale control of exchange bias with BiFeO3 thin films

We demonstrate a direct correlation between the domain structure of multiferroic BiFeO3 thin films and exchange bias of Co0.9Fe0.1/BiFeO3 heterostructures. Two distinct types of interactions, an enhancement of the coercive field (exchange enhancement) and an enhancement of the coercive field combined with large shifts of the hysteresis loop (exchange bias), have been observed in these heterostructures, which depend directly on the type and crystallography of the nanoscale (2 nm) domain walls in the BiFeO3 film. We show that the magnitude of the exchange bias interaction scales with the length of 109 degree ferroelectric domain walls in the BiFeO3 thin films which have been probed via piezoresponse force microscopy and x-ray magnetic circular dichroism.

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