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Shin-ichi Kimura

Shin-ichi Kimura contributes to research discovery and scholarly infrastructure.

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Published work

18 published item(s)

preprint2022arXiv

Growth of 2D topological material Bi on InSb(111)B with fractal surface structures

Bismuth (Bi) atomic layers are known as 2D topological materials with variety of the electronic structures and topological orders depending on the number of stacking layers. Recently, it is reported that few layers of Bi grown on semiconductor substrate InSb(111)B exhibit the Sierpiński-triangle (ST) fractal patterns on the surface. In this work, we have grown Bi layers on InSb(111)B and traced the evolution of the atomic and electronic structures of Bi. The surface atomic structures and growth modes were monitored by using reflective high-energy electron diffraction and core-level photoelectron spectroscopy. It is suggested that the single layer of the ST-phase Bi grows on InSb(111)B and the following Bi deposition causes layer-by-layer growth up to nominally 4 atomic layers. Diffuse band dispersion and quantum well states observed by angle-resolved photoelectron spectroscopy are consistent with the small surface domains and variation of the thickness even during the layer-by-layer growth region. The further Bi evaporation changes the growth mode to the 3D island formation. The unveiled growth behavior of Bi on InSb(111)B would provide a new interesting playground to study 2D topological electronic structure of quasi-periodic 2D atomic layers.

preprint2022arXiv

Surface valence transition in SmS by alkali metal adsorption

The electronic structure changes of SmS surfaces under potassium (K) doping are elucidated using synchrotron-based core-level photoelectron spectroscopy and angle-resolved photoelectron spectroscopy (ARPES). The Sm core-level and ARPES spectra indicate that the Sm mean valence of the surface increased from the nearly divalent to trivalent states, with increasing K deposition. Carrier-induced valence transition (CIVT) from Sm$^{2+}$ to Sm$^{3+}$ exhibits a behavior opposite to that under conventional electron doping. Excess electrons are trapped by isolated excitons, which is inconsistent with the phase transition from the black insulator with Sm$^{2+}$ to the gold metal with Sm$^{3+}$ under pressure. This CIVT helps to clarify the pressure-induced black-to-golden phase transition in this material, which originates from the Mott transition of excitons.

preprint2021arXiv

Fluctuated spin-orbital texture of Rashba-split surface states in real and reciprocal space

Spin-orbit interaction (SOI) in low-dimensional systems, namely Rashba systems and the edge states of topological materials, is extensively studied in this decade as a promising source to realize various fascinating spintronic phenomena, such as the source of the spin current and spin-mediated energy conversion. Here, we show the odd fluctuation in the spin-orbital texture in a surface Rashba system on Bi/InAs(110)-(2$\times$1) by spin- and angle-resolved photoelectron spectroscopy and a numerical simulation based on a density-functional theory (DFT) calculation. The surface state shows a paired parabolic dispersion with the spin degeneracy lifted by the Rashba effect. Although its spin polarization should be fixed in a particular direction based on the Rashba model, the observed spin polarization varies greatly and even reverses its sign depending on the wavenumber. DFT calculations also reveal that the spin directions of two inequivalent Bi chains on the surface change from nearly parallel (canted-parallel) to anti-parallel in real space in the corresponding wavevector region. These results point out an oversimplification of the nature of spin in Rashba and Dirac systems and provide more freedom than expected for spin manipulation of photoelectrons.

preprint2020arXiv

One-dimensionality of the spin-polarized surface conduction and valence bands of quasi-one-dimensional Bi chains on GaSb(110)-(2$\times$1)

Surface electronic structure and its one-dimensionality above and below the Fermi level ($E_{\rm F}$) were surveyed on the Bi/GaSb(110)-(2$\times$1) surface hosting quasi-one-dimensional (Q1D) Bi chains, using conventional (one-photon) and two-photon angle-resolved photoelectron spectroscopy (ARPES) and theoretical calculations. ARPES results reveal that the Q1D electronic states are within the projected bulk bandgap. Circular dichroism of two-photon ARPES and density-functional-theory calculation indicate clear spin and orbital polarization of the surface states consistent with the giant sizes of Rashba-type SOI, derived from the strong contribution of heavy Bi atoms. The surface conduction band above $E_{\rm F}$ forms a nearly straight constant-energy contour, suggesting its suitability for application in further studies of one-dimensional electronic systems with strong SOI. A tight-binding model calculation based on the obtained surface electronic structure successfully reproduces the surface band dispersions and predicts possible one- to two-dimensional crossover in the temperature range of 60--100~K.

preprint2019arXiv

Magneto-Optics of the Weyl Semimetal TaAs in the THz and IR Regions

The magnetic-field dependence of optical reflectivity [$R(ω)$] and optical conductivity [$σ(ω)$] spectra of the ideal type-I Weyl semimetal TaAs has been investigated at the temperature of 10 K in the terahertz (THz) and infrared (IR) regions. The obtained $σ(ω)$ spectrum in the THz region of $\hbarω\leq15$ meV is strongly affected by the applied magnetic field ($B$): The Drude spectral weight is rapidly suppressed and an energy gap originating from the optical transition in the lowest Landau levels appears with a gap size that increases in proportion to $\sqrt{B}$, which suggests linear band dispersions. The obtained THz $σ(ω)$ spectra could be scaled not only in the energy scale by $\sqrt{B}$ but also in the intensity by $1/\sqrt{B}$ as predicted theoretically. In the IR region for $\hbarω\geq17$ meV, on the other hand, the observed $R(ω)$ peaks originating from the optical transitions in higher Landau levels are proportional to linear-$B$ suggesting parabolic bands. The different band dispersions originate from the crossover from the Dirac to the free-electron bands.

preprint2015arXiv

Anomalous excitons and screenings unveiling strong electronic correlations in SrTi$_{1-x}$Nb$_x$O$_3$, 0$\leq$x$\leq$0.005

Electron-electron (e-e) and electron-hole (e-h) interactions are often associated with many exotic phenomena in correlated electron systems. Here, we report an observation of anomalous excitons at 3.75 , 4.67 and 6.11 eV at 4.2 K in bulk-SrTiO$_3$. Fully supported by ab initio GW Bethe-Salpeter equation calculations, these excitons are due to surprisingly strong e-h and e-e interactions with different characters: 4.67 and 6.11 eV are resonant excitons and 3.75 eV is a bound Wannier-like exciton with an unexpectedly higher level of delocalization. Measurements and calculations on SrTi$_{1-x}$Nb$_x$O$_3$ for 0.0001$\leq$x$\leq$0.005 further show that energy and spectral-weight of the excitonic peaks vary as a function of electron doping (x) and temperature, which are attributed to screening effects. Our results show the importance of e-h and e-e interactions yielding to anomalous excitons and thus bring out a new fundamental perspective in SrTiO$_3$.

preprint2015arXiv

Relation between $c$-$f$ hybridization and magnetic ordering in CeRu$_2$Al$_{10}$: An optical conductivity study of Ce(Ru$_{1-x}$Rh$_x$)$_2$Al$_{10}$ ($x\leq0.05$)

A Kondo semiconductor CeRu$_2$Al$_{10}$ with an orthorhombic crystal structure shows an unusual antiferromagnetic ordering at rather high temperature $T_0$ of 27.3 K, which is lower than the Kondo temperature $T_{\rm K}\sim$ 60 K. In optical conductivity [$σ(ω)$] spectra that directly reflect electronic structure, the $c$-$f$ hybridization gap between the conduction and $4f$ states is observed at around 40 meV along the three principal axes. However, an additional peak at around 20 meV appears only along the $b$ axis. With increasing $x$ to 0.05 in Ce(Ru$_{1-x}$Rh$_x$)$_2$Al$_{10}$, the $T_0$ decreases slightly from 27.3 K to 24 K, but the direction of the magnetic moment changes from the $c$ axis to the $a$ axis. Thereby, the $c$-$f$ hybridization gap in the $σ(ω)$ spectra is strongly suppressed, but the intensity of the 20-meV peak remains as strong as for $x=0$. These results suggest that the change of the magnetic moment direction originates from the decreasing of the $c$-$f$ hybridization intensity. The magnetic ordering temperature $T_0$ is not directly related to the $c$-$f$ hybridization but is related to the charge excitation at 20 meV observed along the $b$ axis.

preprint2015arXiv

Surface Tomonaga-Luttinger liquid state on Bi/InSb(001)

A 1D metallic surface state was created on an anisotropic InSb(001) surface covered with Bi. Angle-resolved photoelectron spectroscopy (ARPES) showed a 1D Fermi contour with almost no 2D distortion. Close to the Fermi level ($E_{\rm F}$), the angle-integrated photoelectron spectra showed power-law scaling with the binding energy and temperature. The ARPES plot above $E_{\rm F}$ obtained thanks to thermally broadened Fermi edge at room temperature showed a 1D state with continuous metallic dispersion across $E_{\rm F}$ and power-law intensity suppression around $E_{\rm F}$. These results strongly suggest a Tomonaga-Luttinger liquid on the Bi/InSb(001) surface.

preprint2013arXiv

Optical properties of iron-based superconductor LiFeAs single crystal

We have measured the reflectivity spectra of the iron based superconductor LiFeAs (Tc = 17.6 K) in the temperature range from 4 to 300 K. In the superconducting state (T < Tc), the clear opening of the optical absorption gap was observed below 25 cm-1, indicating an isotropic full gap formation. In the normal state (T > Tc), the optical conductivity spectra display a typical metallic behavior with the Drude type spectra at low frequencies, but we found that the introduction of the two Drude components best fits the data, indicating the multiband nature of this superconductor. A theoretical analysis of the low temperature data (T=4K < Tc) also suggests that two superconducting gaps best fit the data and their values were estimated as Δ1 = 1.59 meV and Δ2 = 3.15 meV, respectively. Using the Ferrell-Glover-Tinkham (FGT) sum rule and dielectric function ε1(ω), the superconducting plasma frequency (ωps) is consistently estimated to be 6,665 cm-1, implying that about 59 % of the free carriers in the normal state condenses into the SC condensate. To investigate the various interband transition processes (for ω > 200 cm-1), we have also performed the local-density approximation (LDA) band calculation and calculated the optical spectra of the interband transitions. The theoretical results provided a qualitative agreement with the experimental data below 4000 cm-1

preprint2013arXiv

Polarization-Dependent Three-Dimensional Angle-Resolved Photoemission Spectroscopy of BaFe$_{1.8}$Co$_{0.2}$As$_{2}$

We performed polarization- and photon-energy-dependent angle-resolved photoemission spectroscopy of a slightly overdoped iron pnictide superconductor, BaFe$_{1.8}$Co$_{0.2}$As$_{2}$, to clarify the three-dimensional electronic structure including its orbital characters at the Brillouin zone center. Two hole Fermi surfaces (FSs) with $d_{xz/yz}$ and $d_{xy/x^2-y^2}$ orbitals were observed but $d_{z^2}$ hole FS, which has nodes according to a theory of the spin-fluctuation superconductivity mechanism, did not appear. These results suggest that no node will appear at hole FSs at the zone center.

preprint2012arXiv

Existence of Heavy Fermions in the Antiferromagnetic Phase of CeIn3

We report the pressure-dependent optical conductivity spectra of a heavy fermion (HF) compound CeIn3 below the Neel temperature of 10 K to investigate the existence of the HF state in the antiferromagnetic (AFM) phase. The peak due to the interband transition in the hybridization gap between the conduction band and nearly localized 4f states (c-f hybridization) appears at the photon energy of about 20 meV not only in the HF regime but also in the AFM regime. Both the energy and intensity of the c-f hybridization peak continuously increase with the application of pressure from the AFM to the HF regime. This result suggests that the c-f hybridization, as well as the heavy fermions, exists even in the AFM phase of CeIn3.

preprint2012arXiv

Infrared and Terahertz Spectroscopy of Strongly Correlated Electron Systems under Extreme Conditions

Owing to its high brilliance, infrared and terahertz synchrotron radiation (IR/THz-SR) has emerged as a powerful tool for spectroscopy under extreme (i.e., technically more difficult) experimental conditions such as high pressure, high magnetic field, high spatial resolution, and a combination of these. The methodologies for pressure- and magnetic-field-dependent spectroscopy and microscopy using IR/THz-SR have advanced rapidly worldwide. By applying them in strongly correlated electron systems (SCESs), many experimental studies have been performed on their electronic structures and phonon/molecular vibration modes under extreme conditions. Here, we review the recent progress of methodologies of IR/THz-SR spectroscopy and microscopy, and the experimental results on SCESs and other systems obtained under extreme conditions.

preprint2012arXiv

Momentum-Dependent Hybridization Gap and dispersive in-gap state of The Kondo Semiconductor SmB6

We report the temperature-dependent three-dimensional angle-resolved photoemission spectra of the Kondo semiconductor SmB$_6$. We found a difference in the temperature dependence of the peaks at the X and $Γ$ points, due to hybridization between the Sm 5d conduction band and the nearly localized Sm 4f state. The peak intensity at the X point has the same temperature dependence as the valence transition below 120 K, while that at the $Γ$ point is consistent with the magnetic excitation at Q=(0.5,0.5,0.5) below 30 K. This suggests that the hybridization with the valence transition mainly occurs at the X point, and the initial state of the magnetic excitation is located at the $Γ$ point.

preprint2011arXiv

Observation of warping effects in the band and angular momentum structures of topological insulator Bi2Te3

We performed angle resolved photoemission (ARPES) experiments on Bi2Te3 with circularly polarized light. ARPES data show very strong circular dichroism, indicating existence of orbital angular momentum (OAM). Moreover, the alignment of OAM is found to have a strong binding energy dependence. Such energy dependence comes from a relatively strong band warping effect in Bi2Te3 compared to Bi2Se3. OAM close to Dirac point has an ideal chiral structure (sin ?) without out-of-plane component. Warping effect comes in as the binding energy decreases and circular dichroism along a constant energy contour can no longer be explained by a simple sin? function but requires a sin3? term. When the warping effect becomes even stronger near the Fermi energy, circular dichroism gains an additional sin6? term. Such behavior is found to be compatible with the theoretically predicted OAM structure.

preprint2011arXiv

Optical study of charge instability in CeRu2Al10 in comparison with CeOs2Al10 and CeFe2Al10

The anisotropic electronic structure responsible for the antiferromagnetic transition in CeRu$_2$Al$_{10}$ at the unusually high temperature of $T_0$ = 28 K was studied using optical conductivity spectra, Ce 3d X-ray photoemission spectra, and band calculation. It was found that the electronic structure in the $ac$ plane is that of a Kondo semiconductor, whereas that along the b axis has a nesting below 32 K (slightly higher than $T_0$). These characteristics are the same as those of CeOs$_2$Al$_{10}$ [S. Kimura {\it et al.}, Phys. Rev. Lett. 106, 056404 (2011).]. The $c$-$f$ hybridization intensities between the conduction and $4f$ electrons of CeRu$_2$Al$_{10}$ and CeOs$_2$Al$_{10}$ are weaker than that of CeFe$_2$Al$_{10}$, showing no magnetic ordering. These results suggest that the electronic structure with one-dimensional weak $c$-$f$ hybridization along the b axis combined with two-dimensional strong hybridization in the $ac$ plane causes charge-density wave (CDW) instability, and the CDW state then induces magnetic ordering.

preprint2010arXiv

Anisotropic Electronic Structure of the Kondo Semiconductor CeFe2Al10 Studied by Optical Conductivity

We report temperature-dependent polarized optical conductivity [$σ(ω)$] spectra of CeFe$_2$Al$_{10}$, which is a reference material for CeRu$_2$Al$_{10}$ and CeOs$_2$Al$_{10}$ with an anomalous magnetic transition at 28 K. The $σ(ω)$ spectrum along the b-axis differs greatly from that in the $ac$-plane, indicating that this material has an anisotropic electronic structure. At low temperatures, in all axes, a shoulder structure due to the optical transition across the hybridization gap between the conduction band and the localized $4f$ states, namely $c$-$f$ hybridization, appears at 55 meV. However, the gap opening temperature and the temperature of appearance of the quasiparticle Drude weight are strongly anisotropic indicating the anisotropic Kondo temperature. The strong anisotropic nature in both electronic structure and Kondo temperature is considered to be relevant the anomalous magnetic phase transition in CeRu$_2$Al$_{10}$ and CeOs$_2$Al$_{10}$.

preprint2010arXiv

Polaronic behavior of photoelectron spectra of Fe3O4 revealed by both hard X-ray and extremely low energy photons

Hard X-ray and extremely low energy bulk-sensitive photoelectron spectroscopy has been performed in the temperature range of 100-330 K for Fe3O4. In the high temperature phase just above the Verwey transition, the intensity at the Fermi level (EF) is still negligible, but it increases gradually with further increasing the temperature (250 K, 330 K) in consistence with the temperature dependence of the conductivity. The spectral behaviors near EF with temperature are well explained by the model, which takes the polaron effect into account.

preprint2009arXiv

Kondo-like behaviors in magnetic and thermal properties of single crystal Tm5Si2Ge2

We grew the single crystal of stoichiometric Tm5Si2.0Ge2.0 using a Bridgeman method and performed XRD, EDS, magnetization, ac and dc magnetic susceptibilities, specific heat, electrical resistivity and XPS experiments. It crystallizes in orthorhombic Sm5Ge4-type structure. The mean valence of Tm ions in Tm5Si2.0Ge2.0 is almost trivalent. The 4f states is split by the crystalline electric field. The ground state exhibits the long range antiferromagnetic order with the ferromagnetically coupled magnetic moments in the ac plane below 8.01 K, while the exited states exhibit the reduction of magnetic moment and magnetic entropy and -log T-behaviors observed in Kondo materials.