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Researcher profile

Hidetoshi Miyazaki

Hidetoshi Miyazaki contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.str-elcond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2016arXiv

Surface Kondo Effect and Non-Trivial Metallic State of the Kondo Insulator YbB12

A synergistic effect between strong electron correlation and spin-orbit interaction (SOI) has been theoretically predicted to result in a new topological state of quantum matter on Kondo insulators (KIs), so-called topological Kondo insulators (TKIs). One TKI candidate has been experimentally observed on the KI SmB6(001), and the origin of the surface states (SS) and the topological order of SmB6 has been actively discussed. Here, we show a metallic SS on the clean surface of another TKI candidate YbB12(001), using angle-resolved photoelectron spectroscopy. The SS showed temperature-dependent reconstruction corresponding with the Kondo effect observed for bulk states. Despite the low-temperature insulating bulk, the reconstructed SS with c-f hybridization was metallic, forming a closed Fermi contour surrounding $\barΓ$ on the surface Brillouin zone and agreeing with the theoretically expected behavior for SS on TKIs. These results demonstrate the temperature-dependent holistic reconstruction of two-dimensional states localized on KIs surface driven by the Kondo effect.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Momentum-Dependent Hybridization Gap and dispersive in-gap state of The Kondo Semiconductor SmB6

We report the temperature-dependent three-dimensional angle-resolved photoemission spectra of the Kondo semiconductor SmB$_6$. We found a difference in the temperature dependence of the peaks at the X and $Γ$ points, due to hybridization between the Sm 5d conduction band and the nearly localized Sm 4f state. The peak intensity at the X point has the same temperature dependence as the valence transition below 120 K, while that at the $Γ$ point is consistent with the magnetic excitation at Q=(0.5,0.5,0.5) below 30 K. This suggests that the hybridization with the valence transition mainly occurs at the X point, and the initial state of the magnetic excitation is located at the $Γ$ point.

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preprint2011arXiv

Optical study of charge instability in CeRu2Al10 in comparison with CeOs2Al10 and CeFe2Al10

The anisotropic electronic structure responsible for the antiferromagnetic transition in CeRu$_2$Al$_{10}$ at the unusually high temperature of $T_0$ = 28 K was studied using optical conductivity spectra, Ce 3d X-ray photoemission spectra, and band calculation. It was found that the electronic structure in the $ac$ plane is that of a Kondo semiconductor, whereas that along the b axis has a nesting below 32 K (slightly higher than $T_0$). These characteristics are the same as those of CeOs$_2$Al$_{10}$ [S. Kimura {\it et al.}, Phys. Rev. Lett. 106, 056404 (2011).]. The $c$-$f$ hybridization intensities between the conduction and $4f$ electrons of CeRu$_2$Al$_{10}$ and CeOs$_2$Al$_{10}$ are weaker than that of CeFe$_2$Al$_{10}$, showing no magnetic ordering. These results suggest that the electronic structure with one-dimensional weak $c$-$f$ hybridization along the b axis combined with two-dimensional strong hybridization in the $ac$ plane causes charge-density wave (CDW) instability, and the CDW state then induces magnetic ordering.

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preprint2009arXiv

Kondo-like behaviors in magnetic and thermal properties of single crystal Tm5Si2Ge2

We grew the single crystal of stoichiometric Tm5Si2.0Ge2.0 using a Bridgeman method and performed XRD, EDS, magnetization, ac and dc magnetic susceptibilities, specific heat, electrical resistivity and XPS experiments. It crystallizes in orthorhombic Sm5Ge4-type structure. The mean valence of Tm ions in Tm5Si2.0Ge2.0 is almost trivalent. The 4f states is split by the crystalline electric field. The ground state exhibits the long range antiferromagnetic order with the ferromagnetically coupled magnetic moments in the ac plane below 8.01 K, while the exited states exhibit the reduction of magnetic moment and magnetic entropy and -log T-behaviors observed in Kondo materials.

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