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Researcher profile

Takuto Nakamura

Takuto Nakamura contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-el

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Published work

4 published item(s)

preprint2022arXiv

Growth of 2D topological material Bi on InSb(111)B with fractal surface structures

Bismuth (Bi) atomic layers are known as 2D topological materials with variety of the electronic structures and topological orders depending on the number of stacking layers. Recently, it is reported that few layers of Bi grown on semiconductor substrate InSb(111)B exhibit the Sierpiński-triangle (ST) fractal patterns on the surface. In this work, we have grown Bi layers on InSb(111)B and traced the evolution of the atomic and electronic structures of Bi. The surface atomic structures and growth modes were monitored by using reflective high-energy electron diffraction and core-level photoelectron spectroscopy. It is suggested that the single layer of the ST-phase Bi grows on InSb(111)B and the following Bi deposition causes layer-by-layer growth up to nominally 4 atomic layers. Diffuse band dispersion and quantum well states observed by angle-resolved photoelectron spectroscopy are consistent with the small surface domains and variation of the thickness even during the layer-by-layer growth region. The further Bi evaporation changes the growth mode to the 3D island formation. The unveiled growth behavior of Bi on InSb(111)B would provide a new interesting playground to study 2D topological electronic structure of quasi-periodic 2D atomic layers.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Surface valence transition in SmS by alkali metal adsorption

The electronic structure changes of SmS surfaces under potassium (K) doping are elucidated using synchrotron-based core-level photoelectron spectroscopy and angle-resolved photoelectron spectroscopy (ARPES). The Sm core-level and ARPES spectra indicate that the Sm mean valence of the surface increased from the nearly divalent to trivalent states, with increasing K deposition. Carrier-induced valence transition (CIVT) from Sm$^{2+}$ to Sm$^{3+}$ exhibits a behavior opposite to that under conventional electron doping. Excess electrons are trapped by isolated excitons, which is inconsistent with the phase transition from the black insulator with Sm$^{2+}$ to the gold metal with Sm$^{3+}$ under pressure. This CIVT helps to clarify the pressure-induced black-to-golden phase transition in this material, which originates from the Mott transition of excitons.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Fluctuated spin-orbital texture of Rashba-split surface states in real and reciprocal space

Spin-orbit interaction (SOI) in low-dimensional systems, namely Rashba systems and the edge states of topological materials, is extensively studied in this decade as a promising source to realize various fascinating spintronic phenomena, such as the source of the spin current and spin-mediated energy conversion. Here, we show the odd fluctuation in the spin-orbital texture in a surface Rashba system on Bi/InAs(110)-(2$\times$1) by spin- and angle-resolved photoelectron spectroscopy and a numerical simulation based on a density-functional theory (DFT) calculation. The surface state shows a paired parabolic dispersion with the spin degeneracy lifted by the Rashba effect. Although its spin polarization should be fixed in a particular direction based on the Rashba model, the observed spin polarization varies greatly and even reverses its sign depending on the wavenumber. DFT calculations also reveal that the spin directions of two inequivalent Bi chains on the surface change from nearly parallel (canted-parallel) to anti-parallel in real space in the corresponding wavevector region. These results point out an oversimplification of the nature of spin in Rashba and Dirac systems and provide more freedom than expected for spin manipulation of photoelectrons.

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preprint2020arXiv

One-dimensionality of the spin-polarized surface conduction and valence bands of quasi-one-dimensional Bi chains on GaSb(110)-(2$\times$1)

Surface electronic structure and its one-dimensionality above and below the Fermi level ($E_{\rm F}$) were surveyed on the Bi/GaSb(110)-(2$\times$1) surface hosting quasi-one-dimensional (Q1D) Bi chains, using conventional (one-photon) and two-photon angle-resolved photoelectron spectroscopy (ARPES) and theoretical calculations. ARPES results reveal that the Q1D electronic states are within the projected bulk bandgap. Circular dichroism of two-photon ARPES and density-functional-theory calculation indicate clear spin and orbital polarization of the surface states consistent with the giant sizes of Rashba-type SOI, derived from the strong contribution of heavy Bi atoms. The surface conduction band above $E_{\rm F}$ forms a nearly straight constant-energy contour, suggesting its suitability for application in further studies of one-dimensional electronic systems with strong SOI. A tight-binding model calculation based on the obtained surface electronic structure successfully reproduces the surface band dispersions and predicts possible one- to two-dimensional crossover in the temperature range of 60--100~K.

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