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Shengbai Zhang

Shengbai Zhang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elphysics.comp-phcond-mat.supr-conphysics.app-ph

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Published work

15 published item(s)

preprint2023arXiv

Small polarom formation by electron-electron interaction

In a solid, electrons can be scattered both by phonons and other electrons. First proposed by Landau, scattering by phonons can lead to a composite entity called a polaron, in which a lattice distortion traps an itinerant electron (or hole) such that the distortion and carrier move in unison as a single particle with larger effective mass. While this is the traditional view of polarons, the rise of 2D systems, especially strongly correlated ones, open the prospect of electron scattering taking on a larger role in spontaneous carrier localization for such material systems. Here, we show that in transition metal halides, such electron-electron interactions can lead to polaron formation even in the absence of lattice distortion. This suggests an alternative direction for polaron formation, transport, and control in solids. This new mechanism of polaron formation is confirmed by first-principles calculation of 2D transition metal halides, CrI2, CoCl2 and CoBr2. These theoretical predictions are supported by scanning tunneling microscopy/spectroscopy measurements of polarons in CrI2.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Dative epitaxy of commensurate monocrystalline covalent-van der Waals moiré supercrystal

Realizing van der Waals (vdW) epitaxy in the 80s represents a breakthrough that circumvents the stringent lattice matching and processing compatibility requirements in conventional covalent heteroepitaxy. However, due to the weak vdW interactions, there is little control over film qualities by the substrate. Typically, discrete domains with a spread of misorientation angles are formed, limiting the applicability of vdW epitaxy. Here we report the epitaxial growth of monocrystalline, covalent Cr5Te8 2D crystals on monolayer vdW WSe2 by chemical vapor deposition, driven by interfacial dative bond formation. The lattice of Cr5Te8, with a lateral dimension of a few ten microns, is fully commensurate with that of WSe2 via 3 x 3 (Cr5Te8)-7 x 7 (WSe2) supercell matching, forming a single crystalline moire superlattice. Our work has established a conceptually distinct paradigm of thin film epitaxy termed dative epitaxy, which takes full advantage of covalent epitaxy with chemical bonding for fixing the atomic registry and crystal orientation, while circumventing its stringent lattice matching and processing compatibility requirements; conversely, it ensures the full flexibility of vdW epitaxy, while avoiding its poor orientation control. Cr5Te8 2D crystals grown by dative epitaxy exhibit square magnetic hysteresis, suggesting minimized interfacial defects that can serve as pinning sites.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Epitaxial Growth of Two-dimensional Insulator Monolayer Honeycomb BeO

The emergence of two-dimensional (2D) materials launched a fascinating frontier of flatland electronics. Most crystalline atomic layer materials are based on layered van der Waals materials with weak interlayer bonding, which naturally leads to thermodynamically stable monolayers. We report the synthesis of a 2D insulator comprised of a single atomic sheet of honeycomb structure BeO (h-BeO), although its bulk counterpart has a wurtzite structure. The h-BeO is grown by molecular beam epitaxy (MBE) on Ag(111) thin films that are conveniently grown on Si(111) wafers. Using scanning tunneling microscopy and spectroscopy (STM/S), the honeycomb BeO lattice constant is determined to be 2.65 angstrom with an insulating band gap of 6 eV. Our low energy electron diffraction (LEED) measurements indicate that the h-BeO forms a continuous layer with good crystallinity at the millimeter scale. Moiré pattern analysis shows the BeO honeycomb structure maintains long range phase coherence in atomic registry even across Ag steps. We find that the interaction between the h-BeO layer and the Ag(111) substrate is weak by using STS and complimentary density functional theory calculations. We not only demonstrate the feasibility of growing h-BeO monolayers by MBE, but also illustrate that the large-scale growth, weak substrate interactions, and long-range crystallinity make h-BeO an attractive candidate for future technological applications. More significantly, the ability to create a stable single crystalline atomic sheet without a bulk layered counterpart is an intriguing approach to tailoring novel 2D electronic materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin-Triplet Excitonic Insulator: The Case of Graphone

While various excitonic insulators have been studied in the literature, due to the perceived too-small spin splitting, spin-triplet excitonic insulator is rare. In two-dimensional systems such as a graphone, however, it is possible, as revealed by first-principles calculations coupled with Bethe-Salpeter equation. The critical temperature, given by an effective Hamiltonian, is 11.5 K. While detecting excitonic insulators is still a daunting challenge, the condensation of triplet excitons will result in spin superfluidity, which can be directly measured by a transport experiment. Nonlocal dielectric screening also leads to an unexpected phenomenon, namely, an indirect-to-direct transition crossover between single-particle band and exciton dispersion in graphone, which offers yet another test by experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Ti-alloying of BaZrS3 chalcogenide perovskite for photovoltaics

BaZrS3, a prototypical chalcogenide perovskite, has been shown to possess a direct band gap, an exceptionally strong near band edge light absorption, and good carrier transport. Coupled with its great stability, non-toxicity with earth abundant elements, it is thus a promising candidate for thin film solar cells. However, its reported band gap in the range of 1.7-1.8 eV is larger than the optimal value required to reach the Shockley-Queisser limit of a single junction solar cell. Here we report the synthesis of Ba(Zr1-xTix)S3 perovskite compounds with a reduced band gap. It is found that Ti alloying is extremely effective in band gap reduction of BaZrS3: a mere 4 at% alloying decreases the band gap from 1.78 to 1.51 eV, resulting in a theoretical maximum power conversion efficiency of 32%. Higher Ti-alloying concentration is found to destabilize the distorted chalcogenide perovskite phase.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

An Environmentally Stable and Lead-Free Chalcogenide Perovskite

Organic-inorganic halide perovskites are intrinsically unstable when exposed to moisture and/or light. Additionally, the presence of lead in many perovskites raises toxicity concerns. Herein is reported a thin film of BaZrS3, a lead-free chalcogenide perovskite. Photoluminescence and X-ray diffraction measurements show that BaZrS3 is far more stable than methylammonium lead iodide (MAPbI3) in moist environments. Moisture- and light-induced degradations in BaZrS3 and MAPbI3 are compared by using simulations and calculations based on density functional theory. The simulations reveal drastically slower degradation in BaZrS3 due to two factors - weak interaction with water, and very low rates of ion migration. BaZrS3 photo-detecting devices with photo-responsivity of ~46.5 mA W-1 are also reported. The devices retain ~60% of their initial photo-response after 4 weeks in ambient conditions. Similar MAPbI3 devices degrade rapidly and show ~95% decrease in photo-responsivity in just 4 days. The findings establish the superior stability of BaZrS3 and strengthen the case for its use in optoelectronics. New possibilities for thermoelectric energy conversion using these materials are also demonstrated.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Topological carbon materials: a new perspective

Carbon has numerous one-dimensional (1D), two-dimensional (2D), and three-dimensional (3D) allotropic structures. The study of carbon materials has been a major focus of material science and condensed matter physics. Previous studies have identified different classes of topological semimetallic carbon allotropes with different topological phases. In this review, we first give a brief summary of the development of carbon allotropes from 1D to 3D. Next, we discuss topological properties of carbon materials and their physical origin. Then, we consider possible expansion of the topological study of carbon materials to other light-element materials such as boron. Finally, we present future prospects in pursue of topological physics within carbon allotropes.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Band alignment of two-dimensional lateral heterostructures

Recent experimental synthesis of two-dimensional (2D) heterostructures opens a door to new opportunities in tailoring the electronic properties for novel 2D devices. Here, we show that a wide range of lateral 2D heterostructures could have a prominent advantage over the traditional three-dimensional (3D) heterostructures, because their band alignments are insensitive to the interfacial conditions. They should be at the Schottky-Mott limits for semiconductor-metal junctions and at the Anderson limits for semiconductor junctions, respectively. This fundamental difference from the 3D heterostructures is rooted in the fact that, in the asymptotic limit of large distance, the effect of the interfacial dipole vanishes for 2D systems. Due to the slow decay of the dipole field and the dependence on the vacuum thickness, however, studies based on first-principles calculations often failed to reach such a conclusion. Taking graphene/hexagonal-BN and MoS2/WS2 lateral heterostructures as the respective prototypes, we show that the converged junction width can be order of magnitude longer than that for 3D junctions. The present results provide vital guidance to high-quality transport devices wherever a lateral 2D heterostructure is involved.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Chalcogenide Perovskites- an Emerging Class of Ionic Semiconductors

We report the synthesis and characterization of a novel class of ionic semiconductor materials- inorganic chalcogenide perovskites. Several different compounds including BaZrS3, CaZrS3, SrTiS3 and SrZrS3 were synthesized by high temperature sulfurization of their oxide counterparts. Their crystal structures were identified by XRD and composition by EDX. UV-vis and photoluminescence measurements confirmed that they are direct gap semiconductors with band gap values consistent with theoretical predictions. By adopting an anion alloying approach, we demonstrate widely tunable band gap from 1.73 eV to 2.87 eV. These strongly ionic semiconductors provide a new avenue for engineering the semiconducting properties for applications such as energy harvesting, solid state lighting and sensing.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Coexistence of flat bands and Dirac bands in a carbon-Kagome-lattice family

The Dirac bands and flat bands are difficult to coexist because they represent two extreme ends of electronic properties. However, in this paper, we propose a carbon-Kagome-lattice (CKL) family based on first-principles calculations, and the coexistence of Dirac and flat bands are observed in this series of three-dimensional carbon structures. The flat bands are originated from the orbital interactions of the Kagome lattices, while the Dirac bands are related to the carbon zigzag chains. A tight-binding model is used to explain the various band structures in different CKLs. The coexistence of flat and Dirac bands around the Fermi level implies that CKL structures maybe can serve as superconductors. In addition, electronic properties of the thinnest CKL slabs, only consisting of benzene rings, are studied. Flat bands are found in the band spectra of the two-dimensional structures, and split into spin-up and spin-down bands because of strong correlated effect in the case of hole doping.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Electron and phonon properties and gas storage in carbon honeycomb

A new kind of three-dimensional carbon allotropes, termed carbon honeycomb (CHC), has recently been synthesized [PRL 116, 055501 (2016)]. Based on the experimental results, a family of graphene networks are constructed, and their electronic and phonon properties are calculated by using first principles methods. All networks are porous metal with two types of electron transport channels along the honeycomb axis and they are isolated from each other: one type of channels is originated from the orbital interactions of the carbon zigzag chains and is topologically protected, while the other type of channels is from the straight lines of the carbon atoms that link the zigzag chains and is topologically trivial. The velocity of the electrons can reach ~10^6 m/s. Phonon transport in these allotropes is strongly anisotropic, and the thermal conductivities can be very low when compared with graphite by at least a factor of 15. Our calculations further indicate that these porous carbon networks possess high storage capacity for gaseous atoms and molecules in agreement with experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Towards Three-Dimensional Weyl-SurfaceSemimetals in Graphene Networks

Graphene as a two-dimensional (2D) topological Dirac semimetal has attracted much attention for its outstanding properties and potential applications. However, three-dimensional (3D) topological semimetals for carbon materials are still rare. Searching for such materials with salient physics has become a new direction for carbon research. Here, using first-principles calculations and tight-binding modeling, we study three types of 3D graphene networks whose properties inherit those of Dirac electrons in graphene. In the band structures of these materials, two flat Weyl surfaces appear in the Brillouin zone (BZ), which straddle the Fermi level and are robust against external strain. When the networks are cut, the resulting lower-dimensional slabs and nanowires remain to be semimetallic with Weyl line-like and point-like Fermi surfaces, respectively. Between the Weyl lines, flat surface bands emerge with strong magnetism when each surface carbon atom is passivated by one hydrogen atom. The robustness of these structures can be traced back to a bulk topological invariant, ensured by the sublattice symmetry, and to the one-dimensional (1D) Weyl semimetal behavior of the zigzag carbon chain, which has been the common backbone to all these structures. The flat Weyl-surface semimetals may enable applications in correlated electronics, as well as in energy storage, molecular sieve, and catalysis because of their good stability, porous geometry, and large superficial area.

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preprint2016arXiv

Transition of thermal rectification in silicon nanocones

Current understanding of thermal rectification asserts that the rectification ratio (R), which measures the relative heat flux between two ends of a nanostructure, is determined by its geometric asymmetry. The higher the asymmetry, the higher the R. However, by using nonequilibrium molecular dynamics method we have calculated thermal transport in Si nanocones as an example, the results show that such an understanding may be incorrect and R may not increase monotonically with geometric asymmetry. Rather, R exhibits a sharp reverse when the vertex angle (θ) of the nanocone is approximately 90°. In other words, when θ > 90°, R decreases, rather than increasing. We show that this abnormal behavior is originated from a change in the thermal transport mechanism. At small θs, phonon transport is dominated by localized modes, especially for transport from tip to bottom. At large θs, however, these localized modes disappear, leading to R decrease.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Atomically Resolved FeSe/SrTiO3(001) Interface Structure by Scanning Transmission Electron Microscopy

Interface-enhanced high-temperature superconductivity in one unit-cell (UC) FeSe films on SrTiO3(001) (STO) substrate has recently attracted much attention in condensed matter physics and material science. By combined in-situ scanning tunneling microscopy/spectroscopy (STM/STS) and ex-situ scanning transmission electron microscopy (STEM) studies, we report on atomically resolved structure including both lattice constants and actual atomic positions of the FeSe/STO interface under both non-superconducting and superconducting states. We observed TiO2 double layers (DLs) and significant atomic displacements in the top two layers of STO, lattice compression of the Se-Fe-Se triple layer, and relative shift between bottom Se and topmost Ti atoms. By imaging the interface structures under various superconducting states, we unveil a close correlation between interface structure and superconductivity. Our atomic-scale identification of FeSe/STO interface structure provides useful information on investigating the pairing mechanism of this interface-enhanced high-temperature superconducting system.

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preprint2015arXiv

Spin-orbit-free Weyl-loop and Weyl-point semimetals in a stable three-dimensional carbon allotrope

Topological band theory has revolutionized our understanding of electronic structure of materials, in particular, a novel state - Weyl semimetal - has been predicted for systems with strong spin-orbit coupling (SOC). Here, a new class of Weyl semimetals, solely made of light elements with negligible SOC, is proposed. Our first-principles calculations show that conjugated p orbital interactions in a three-dimensional pure carbon network, termed interpenetrated graphene network, is sufficient to produce the same Weyl physics. This carbon allotrope has an exceptionally good structural stability. Its Fermi surface consists of two symmetry-protected Weyl loops with linear dispersion along perpendicular directions. Upon the breaking of inversion symmetry, each Weyl loop is reduced to a pair of Weyl points. The surface band of the network is nearly flat with a very large density of states at the Fermi level. It is reduced to Fermi arcs upon the symmetry breaking, as expected.

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