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Shawn Mack

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cond-mat.mes-hall cond-mat.str-el

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preprint2018arXiv

Symmetry Breaking of the Persistent Spin Helix in Quantum Transport

We exploit the high-symmetry spin state obtained for equal Rashba and linear Dresselhaus interactions to derive a closed-form expression for the weak localization magnetoconductivity -- the paradigmatic signature of spin-orbit coupling in quantum transport. The small parameter of the theory is the deviation from the symmetry state introduced by the mismatch of the linear terms and by the cubic Dresselhaus term. In this regime, we perform quantum transport experiments in GaAs quantum wells. Top and back gates allow independent tuning of the Rashba and Dresselhaus terms in order to explore the broken-symmetry regime where the formula applies. We present a reliable two-step method to extract all parameters from fits to the new expression, obtaining excellent agreement with recent experiments. This provides experimental confirmation of the new theory, and advances spin-orbit coupling towards a powerful resource in emerging quantum technologies.

preprint2014arXiv

Terahertz electron-hole recollisions in GaAs/AlGaAs quantum wells: robustness to scattering by optical phonons and thermal fluctuations

Electron-hole recollisions are induced by resonantly injecting excitons with a near-IR laser at frequency $f_{\text{NIR}}$ into quantum wells driven by a ~10 kV/cm field oscillating at $f_{\text{THz}} = 0.57$ THz. At $T=12$ K, up to 18 sidebands are observed at frequencies $f_{\text{sideband}}=f_{\text{NIR}}+2n f_{\text{THz}}$, with $-8 \le 2n \le 28$. Electrons and holes recollide with total kinetic energies up to 57 meV, well above the $E_{\text{LO}} = 36$ meV threshold for longitudinal optical (LO) phonon emission. Sidebands with order up to $2n=22$ persist up to room temperature. A simple model shows that LO phonon scattering suppresses but does not eliminate sidebands associated with kinetic energies above $E_{\text{LO}}$.

preprint2010arXiv

Visualizing Critical Correlations near the Metal-Insulator Transition in Ga1-xMnxAs

Electronic states in disordered conductors on the verge of localization are predicted to exhibit critical spatial characteristics indicative of the proximity to a metal- insulator phase transition. We have used scanning tunneling microscopy to visualize electronic states in Ga1-xMnxAs samples close to this transition. Our measurements show that doping-induced disorder produces strong spatial variations in the local tunneling conductance across a wide range of energies. Near the Fermi energy, where spectroscopic signatures of electron-electron interaction are the most prominent, the electronic states exhibit a diverging spatial correlation length. Power-law decay of the spatial correlations is accompanied by log-normal distributions of the local density of states and multifractal spatial characteristics. Our method can be used to explore critical correlations in other materials close to a quantum critical point.