BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Anthony Richardella

Anthony Richardella appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.supr-conphysics.app-ph

Catalog footprint

What is connected

11works
5topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

11 published item(s)

preprint2021arXiv

ZrTe2/CrTe2: an epitaxial van der Waals platform for spintronics

The rapid discovery of two-dimensional (2D) van der Waals (vdW) quantum materials has led to heterostructures that integrate diverse quantum functionalities such as topological phases, magnetism, and superconductivity. In this context, the epitaxial synthesis of vdW heterostructures with well-controlled interfaces is an attractive route towards wafer-scale platforms for systematically exploring fundamental properties and fashioning proof-of-concept devices. Here, we use molecular beam epitaxy to synthesize a vdW heterostructure that interfaces two material systems of contemporary interest: a 2D ferromagnet (1T-CrTe2) and a topological semimetal (ZrTe2). We find that one unit-cell (u.c.) thick 1T-CrTe2 grown epitaxially on ZrTe2 is a 2D ferromagnet with a clear anomalous Hall effect. In thicker samples (12 u.c. thick CrTe2), the anomalous Hall effect has characteristics that may arise from real-space Berry curvature. Finally, in ultrathin CrTe2 (3 u.c. thickness), we demonstrate current-driven magnetization switching in a full vdW topological semimetal/2D ferromagnet heterostructure device.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Changes of Magnetism in a Magnetic Insulator due to Proximity to a Topological Insulator

This letter reports the modification of magnetism in a magnetic insulator Y3Fe5O12 thin film by topological surface states (TSS) in an adjacent topological insulator Bi2Se3 thin film. Ferromagnetic resonance measurements show that the TSS in Bi2Se3 produces a perpendicular magnetic anisotropy, results in a decrease in the gyromagnetic ratio, and enhances the damping in Y3Fe5O12. Such TSS-induced changes become more pronounced as the temperature decreases from 300 K to 50 K. These results suggest a completely new approach for control of magnetism in magnetic thin films.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Surface state dominated spin-charge current conversion in topological insulator/ferromagnetic insulator heterostructures

We report the observation of ferromagnetic resonance-driven spin pumping signals at room temperature in three-dimensional topological insulator thin films -- Bi2Se3 and (Bi,Sb)2Te3 -- deposited by molecular beam epitaxy on yttrium iron garnet thin films. By systematically varying the Bi2Se3 film thickness, we show that the spin-charge conversion efficiency, characterized by the inverse Rashba-Edelstein effect length (lambda_IREE), increases dramatically as the film thickness is increased from 2 quintuple layers, saturating above 6 quintuple layers. This suggests a dominant role of surface states in spin and charge interconversion in topological insulator/ferromagnet heterostructures. Our conclusion is further corroborated by studying a series of YIG/(BiSb)2Te3 heterostructures. Finally, we use the ferromagnetic resonance linewidth broadening and the inverse Rashba-Edelstein signals to determine the effective interfacial spin mixing conductance and lambda_IREE.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Characterizing the Structure of Topological Insulator Thin Films

We describe the characterization of structural defects that occur during molecular beam epitaxy of topological insulator thin films on commonly used substrates. Twinned domains are ubiquitous but can be reduced by growth on smooth InP (111)A substrates, depending on details of the oxide desorption. Even with a low density of twins, the lattice mismatch between (Bi,Sb)2Te3 and InP can cause tilts in the film with respect to the substrate. We also briefly discuss transport in simultaneously top and back electrically gated devices using SrTiO3 and the use of capping layers to protect topological insulator films from oxidation and exposure.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Mapping the chemical potential dependence of current-induced spin polarization in a topological insulator

We report electrical measurements of the current-induced spin polarization of the surface current in topological insulator devices where contributions from bulk and surface conduction can be disen- tangled by electrical gating. The devices use a ferromagnetic tunnel junction (permalloy/Al2O3) as a spin detector on a back-gated (Bi,Sb)2Te3 channel. We observe hysteretic voltage signals as the magnetization of the detector ferromagnet is switched parallel or anti-parallel to the spin polariza- tion of the surface current. The amplitude of the detected voltage change is linearly proportional to the applied DC bias current in the (Bi,Sb)2Te3 channel. As the chemical potential is tuned from the bulk bands into the surface state band, we observe an enhancement of the spin-dependent voltages up to 300% within the range of the electrostatic gating. Using a simple model, we extract the spin polarization near charge neutrality (i.e. the Dirac point).

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Persistent Optical Gating of a Topological Insulator

Topological insulators (TIs) have attracted much attention due to their spin-polarized surface and edge states, whose origin in symmetry gives them intriguing quantum-mechanical properties. Robust control over the chemical potential of TI materials is important if these states are to become useful in new technologies, or as a venue for exotic physics. Unfortunately, chemical potential tuning is challenging in TIs in part because the fabrication of electrostatic top-gates tends to degrade material properties and the addition of chemical dopants or adsorbates can cause unwanted disorder. Here, we present an all-optical technique which allows persistent, bidirectional gating of a (Bi,Sb)2Te3 channel by optically manipulating the distribution of electric charge below its interface with an insulating SrTiO3 substrate. In this fashion we optically pattern p-n junctions in a TI material, which we subsequently image using scanning photocurrent microscopy. The ability to dynamically write and re-write mesoscopic electronic structures in a TI may aid in the investigation of the unique properties of the topological insulating phase. The optical gating effect may be adaptable to other material systems, providing a more general mechanism for reconfigurable electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Ferromagnetism and Spin-dependent Transport in n-type Mn-Bi2Te3 Thin Films

We describe a detailed study of the structural, magnetic, and magneto-transport properties of single-crystal, n-type, Mn-doped Bi2Te3 thin films grown by molecular beam epitaxy. With increasing Mn concentration, the crystal structure changes from the tetradymite structure of the Bi2Te3 parent crystal at low Mn concentrations towards a BiTe phase in the (Bi2Te3)m(Bi2)n homologous series. Magnetization measurements reveal the onset of ferromagnetism with a Curie temperature in the range 13.8 K - 17 K in films with 2 % - 10 % Mn concentration. Magnetization hysteresis loops reveal that the magnetic easy axis is along the c-axis of the crystal (perpendicular to the plane). Polarized neutron reflectivity measurements of a 68 nm-thick sample show that the magnetization is uniform through the film. The presence of ferromagnetism is also manifest in a strong anomalous Hall effect and a hysteretic magnetoresistance arising from domain wall scattering. Ordinary Hall effect measurements show that the carrier density is n-type, increases with Mn doping, and is high enough (> 2.8 x 10^{13} cm^{-2}) to place the chemical potential in the conduction band. Thus, the observed ferromagnetism is likely associated with both bulk and surface states. Surprisingly, the Curie temperature does not show any clear dependence on the carrier density but does increase with Mn concentration. Our results suggest that the ferromagnetism probed in these Mn-doped Bi2Te3 films is not mediated by carriers in the conduction band or in an impurity band.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Momentum space imaging of Cooper pairing in a half-Dirac-gas topological superconductor (a helical 2D topological superconductor)

Superconductivity in Dirac electrons has recently been proposed as a new platform between novel concepts in high-energy and condensed matter physics. It has been proposed that supersymmetry and exotic quasiparticles, both of which remain elusive in particle physics, may be realized as emergent particles in superconducting Dirac electron systems. Using artificially fabricated topological insulator-superconductor heterostructures, we present direct spectroscopic evidence for the existence of Cooper pairing in a half Dirac gas 2D topological superconductor. Our studies reveal that superconductivity in a helical Dirac gas is distinctly different from that of in an ordinary two-dimensional superconductor while considering the spin degrees of freedom of electrons. We further show that the pairing of Dirac electrons can be suppressed by time-reversal symmetry breaking impurities removing the distinction. Our demonstration and momentum-space imaging of Cooper pairing in a half Dirac gas and its magnetic behavior taken together serve as a critically important 2D topological superconductor platform for future testing of novel fundamental physics predictions such as emergent supersymmetry and quantum criticality in topological systems.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Hedgehog Spin-texture and Berry's Phase tuning in a Magnetic Topological Insulator

Understanding and control of spin degrees of freedom on the surfaces of topological materials are key to future applications as well as for realizing novel physics such as the axion electrodynamics associated with time-reversal (TR) symmetry breaking on the surface. We experimentally demonstrate magnetically induced spin reorientation phenomena simultaneous with a Dirac-metal to gapped-insulator transition on the surfaces of manganese-doped Bi2Se3 thin films. The resulting electronic groundstate exhibits unique hedgehog-like spin textures at low energies, which directly demonstrate the mechanics of TR symmetry breaking on the surface. We further show that an insulating gap induced by quantum tunnelling between surfaces exhibits spin texture modulation at low energies but respects TR invariance. These spin phenomena and the control of their Fermi surface geometrical phase first demonstrated in our experiments pave the way for the future realization of many predicted exotic magnetic phenomena of topological origin.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Interplay between ferromagnetism, surface states, and quantum corrections in a magnetically doped topological insulator

The breaking of time-reversal symmetry by ferromagnetism is predicted to yield profound changes to the electronic surface states of a topological insulator. Here, we report on a concerted set of structural, magnetic, electrical and spectroscopic measurements of \MBS thin films wherein photoemission and x-ray magnetic circular dichroism studies have recently shown surface ferromagnetism in the temperature range 15 K $\leq T \leq 100$ K, accompanied by a suppressed density of surface states at the Dirac point. Secondary ion mass spectroscopy and scanning tunneling microscopy reveal an inhomogeneous distribution of Mn atoms, with a tendency to segregate towards the sample surface. Magnetometry and anisotropic magnetoresistance measurements are insensitive to the high temperature ferromagnetism seen in surface studies, revealing instead a low temperature ferromagnetic phase at $T \lesssim 5$ K. The absence of both a magneto-optical Kerr effect and anomalous Hall effect suggests that this low temperature ferromagnetism is unlikely to be a homogeneous bulk phase but likely originates in nanoscale near-surface regions of the bulk where magnetic atoms segregate during sample growth. Although the samples are not ideal, with both bulk and surface contributions to electron transport, we measure a magnetoconductance whose behavior is qualitatively consistent with predictions that the opening of a gap in the Dirac spectrum drives quantum corrections to the conductance in topological insulators from the symplectic to the orthogonal class.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Visualizing Critical Correlations near the Metal-Insulator Transition in Ga1-xMnxAs

Electronic states in disordered conductors on the verge of localization are predicted to exhibit critical spatial characteristics indicative of the proximity to a metal- insulator phase transition. We have used scanning tunneling microscopy to visualize electronic states in Ga1-xMnxAs samples close to this transition. Our measurements show that doping-induced disorder produces strong spatial variations in the local tunneling conductance across a wide range of energies. Near the Fermi energy, where spectroscopic signatures of electron-electron interaction are the most prominent, the electronic states exhibit a diverging spatial correlation length. Power-law decay of the spatial correlations is accompanied by log-normal distributions of the local density of states and multifractal spatial characteristics. Our method can be used to explore critical correlations in other materials close to a quantum critical point.

0 citations0 reviewsNo code linkedOpen access