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David D. Awschalom

David D. Awschalom appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallquant-phcond-mat.mtrl-sciphysics.opticsphysics.app-phphysics.atom-phcond-mat.othercond-mat.str-el

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Published work

33 published item(s)

preprint2022arXiv

Development of a Scalable Quantum Memory Platform -- Materials Science of Erbium-Doped TiO$_2$ Thin Films on Silicon

Rare-earth ions (REI) have emerged as an attractive candidate for solid-state qubits, particularly as a quantum memory. Their 4f-4f transitions are shielded by filled 5s and 5p orbitals, offering a degree of protection from external electric fields. Embedded within a thin film oxide host, REIs could enable a qubit platform with significant memory capabilities. Furthermore, a silicon-compatible thin film form factor would enable the use of standard semiconductor fabrication processes to achieve chip-based integrability and scalability for functional quantum networks. Towards this goal, we have carried out optical and microstructural studies of erbium-doped polycrystalline and epitaxial TiO$_2$ thin films on Si (100), r-sapphire, and SrTiO$_3$ (100). We observe that the inhomogeneous optical linewidth of the Er photoluminescence is comparable or better for polycrystalline Er:TiO$_2$(grown on Si) in comparison to single crystal epitaxial films on sapphire or SrTiO$_3$, implying a relative insensitivity to extended defects. We investigated the effect of the film/substrate and film/air interface and found that the inhomogeneous linewidth and spectral diffusion can be significantly improved via bottom buffer and top capping layers of undoped TiO$_2$. Using such approaches, we obtain inhomogeneous linewidths of 5.2 GHz and spectral diffusion of 180 MHz in Er:TiO$_2$ /Si(100) films and have demonstrated the engineerability of quantum-relevant properties in these thin films.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Purcell enhancement of erbium ions in TiO$_{2}$ on silicon nanocavities

Isolated solid-state atomic defects with telecom optical transitions are ideal quantum photon emitters and spin qubits for applications in long-distance quantum communication networks. Prototypical telecom defects such as erbium suffer from poor photon emission rates, requiring photonic enhancement using resonant optical cavities. Many of the traditional hosts for erbium ions are not amenable to direct incorporation with existing integrated photonics platforms, limiting scalable fabrication of qubit-based devices. Here we present a scalable approach towards CMOS-compatible telecom qubits by using erbium-doped titanium dioxide thin films grown atop silicon-on-insulator substrates. From this heterostructure, we have fabricated one-dimensional photonic crystal cavities demonstrating quality factors in excess of $5\times10^{4}$ and corresponding Purcell-enhanced optical emission rates of the erbium ensembles in excess of 200. This easily fabricated materials platform represents an important step towards realizing telecom quantum memories in a scalable qubit architecture compatible with mature silicon technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Generalized scaling of spin qubit coherence in over 12,000 host materials

Spin defect centers with long quantum coherence times ($T_2$) are key solid-state platforms for a variety of quantum applications. Recently, cluster correlation expansion (CCE) techniques have emerged as a powerful tool to simulate the $T_2$ of defect electron spins in these solid-state systems with good accuracy. Here, based on CCE, we uncover an algebraic expression for $T_2$ generalized for host compounds with dilute nuclear spin baths, which enables a quantitative and comprehensive materials exploration with a near instantaneous estimate of the coherence. We investigate more than 12,000 host compounds at natural isotopic abundance, and find that silicon carbide (SiC), a prominent widegap semiconductor for quantum applications, possesses the longest coherence times among widegap non-chalcogenides. In addition, more than 700 chalcogenides are shown to possess a longer $T_2$ than SiC. We suggest new potential host compounds with promisingly long $T_2$ up to 47 ms, and pave the way to explore unprecedented functional materials for quantum applications.

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preprint2021arXiv

Tunable and Transferable Diamond Membranes for Integrated Quantum Technologies

Color centers in diamond are widely explored as qubits in quantum technologies. However, challenges remain in the effective and efficient integration of these diamond-hosted qubits in device heterostructures. Here, nanoscale-thick uniform diamond membranes are synthesized via "smart-cut" and isotopically (12C) purified overgrowth. These membranes have tunable thicknesses (demonstrated 50 nm to 250 nm), are deterministically transferable, have bilaterally atomically flat surfaces (Rq <= 0.3 nm), and bulk-diamond-like crystallinity. Color centers are synthesized via both implantation and in-situ overgrowth incorporation. Within 110 nm thick membranes, individual germanium-vacancy (GeV-) centers exhibit stable photoluminescence at 5.4 K and average optical transition linewidths as low as 125 MHz. The room temperature spin coherence of individual nitrogen-vacancy (NV-) centers shows Ramsey spin dephasing times (T2*) and Hahn echo times (T2) as long as 150 us and 400 us, respectively. This platform enables the straightforward integration of diamond membranes that host coherent color centers into quantum technologies.

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preprint2020arXiv

High-Q Nanophotonic Resonators on Diamond Membranes using Templated Atomic Layer Deposition of TiO2

Integrating solid-state quantum emitters with nanophotonic resonators is essential for efficient spin-photon interfacing and optical networking applications. While diamond color centers have proven to be excellent candidates for emerging quantum technologies, their integration with optical resonators remains challenging. Conventional approaches based on etching resonators into diamond often negatively impact color center performance and offer low device yield. Here, we developed an integrated photonics platform based on templated atomic layer deposition of TiO2 on diamond membranes. Our fabrication method yields high-performance nanophotonic devices while avoiding etching wavelength-scale features into diamond. Moreover, this technique generates highly reproducible optical resonances and can be iterated on individual diamond samples, a unique processing advantage. Our approach is suitable for a broad range of both wavelengths and substrates and can enable high-cooperativity interfacing between cavity photons and coherent defects in diamond or silicon carbide, rare earth ions, or other material systems.

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preprint2020arXiv

Probing the coherence of solid-state qubits at avoided crossings

Optically addressable paramagnetic defects in wide-band-gap semiconductors are promising platforms for quantum communications and sensing. The presence of avoided crossings between the electronic levels of these defects can substantially alter their quantum dynamics and be both detrimental and beneficial for quantum information applications. Avoided crossings give rise to clock transitions, which can significantly improve protection from magnetic noise and favorably increase coherence time. However, the reduced coupling between electronic and nuclear spins at an avoided crossing may be detrimental to applications where nuclear spins act as quantum memories. Here we present a combined theoretical and experimental study of the quantum dynamics of paramagnetic defects interacting with a nuclear spin bath at avoided crossings. We develop a computational approach based on a generalization of the cluster expansion technique, which can account for processes beyond pure dephasing and describe the dynamics of any solid-state spin-qubits near avoided crossings. Using this approach and experimental validation, we determine the change in nature and source of noise at avoided crossings for divacancies in SiC. We find that we can condition the clock transition of the divacancies in SiC on multiple adjacent nuclear spins states. In our experiments, we demonstrate that one can suppress the effects of fluctuating charge impurities with depletion techniques, leading to an increased coherence time at clock transition, limited purely by magnetic noise. Combined with ab-initio predictions of spin Hamiltonian parameters, the proposed theoretical approach paves the way to designing the coherence properties of spin qubits from first principles.

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preprint2020arXiv

Universal coherence protection in a solid-state spin qubit

Decoherence largely limits the physical realization of qubits and its mitigation is critical to quantum science. Here, we construct a robust qubit embedded in a decoherence-protected subspace, obtained by hybridizing an applied microwave drive with the ground-state electron spin of a silicon carbide divacancy defect. The qubit is protected from magnetic, electric, and temperature fluctuations, which account for nearly all relevant decoherence channels in the solid state. This culminates in an increase of the qubit's inhomogeneous dephasing time by over four orders of magnitude (to > 22 milliseconds), while its Hahn-echo coherence time approaches 64 milliseconds. Requiring few key platform-independent components, this result suggests that substantial coherence improvements can be achieved in a wide selection of quantum architectures.

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preprint2019arXiv

Spatiotemporal Mapping of Photocurrent in a Monolayer Semiconductor Using a Diamond Quantum Sensor

The detection of photocurrents is central to understanding and harnessing the interaction of light with matter. Although widely used, transport-based detection averages over spatial distributions and can suffer from low photocarrier collection efficiency. Here, we introduce a contact-free method to spatially resolve local photocurrent densities using a proximal quantum magnetometer. We interface monolayer MoS2 with a near-surface ensemble of nitrogen-vacancy centers in diamond and map the generated photothermal current distribution through its magnetic field profile. By synchronizing the photoexcitation with dynamical decoupling of the sensor spin, we extend the sensor's quantum coherence and achieve sensitivities to alternating current densities as small as 20 nA per micron. Our spatiotemporal measurements reveal that the photocurrent circulates as vortices, manifesting the Nernst effect, and rises with a timescale indicative of the system's thermal properties. Our method establishes an unprecedented probe for optoelectronic phenomena, ideally suited to the emerging class of two-dimensional materials, and stimulates applications towards large-area photodetectors and stick-on sources of magnetic fields for quantum control.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Symmetry Breaking of the Persistent Spin Helix in Quantum Transport

We exploit the high-symmetry spin state obtained for equal Rashba and linear Dresselhaus interactions to derive a closed-form expression for the weak localization magnetoconductivity -- the paradigmatic signature of spin-orbit coupling in quantum transport. The small parameter of the theory is the deviation from the symmetry state introduced by the mismatch of the linear terms and by the cubic Dresselhaus term. In this regime, we perform quantum transport experiments in GaAs quantum wells. Top and back gates allow independent tuning of the Rashba and Dresselhaus terms in order to explore the broken-symmetry regime where the formula applies. We present a reliable two-step method to extract all parameters from fits to the new expression, obtaining excellent agreement with recent experiments. This provides experimental confirmation of the new theory, and advances spin-orbit coupling towards a powerful resource in emerging quantum technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

High fidelity bi-directional nuclear qubit initialization in SiC

Dynamic nuclear polarization (DNP) is an attractive method for initializing nuclear spins that are strongly coupled to optically active electron spins because it functions at room temperature and does not require strong magnetic fields. In this Letter, we demonstrate that DNP, with near-unity polarization efficiency, can be generally realized in weakly coupled hybrid registers, and furthermore that the nuclear spin polarization can be completely reversed with only sub-Gauss magnetic field variations. This mechanism offers new avenues for DNP-based sensors and radio-frequency free control of nuclear qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Quantum decoherence dynamics of divacancy spins in silicon carbide

Long coherence times are key to the performance of quantum bits (qubits). Here, we experimentally and theoretically show that the Hahn-echo coherence time (T2) of electron spins associated with divacancy defects in 4H-SiC reaches 1.3 ms, one of the longest T2 times of an electron spin in a naturally isotopic crystal. Using a first-principles microscopic quantum-bath model, we find that two factors determine the unusually robust coherence. First, in the presence of moderate magnetic fields (300 G and above), the 29Si and 13C paramagnetic nuclear spin baths are decoupled. In addition, because SiC is a binary crystal, homo-nuclear spin pairs are both diluted and forbidden from forming strongly coupled, nearest-neighbor spin pairs. Longer neighbor distances result in fewer nuclear spin flip-flops, a less fluctuating intra-crystalline magnetic environment, and thus a longer T2 time. Our results point to polyatomic crystals as promising hosts for coherent qubits in the solid state.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Cavity-enhanced measurements of defect spins in silicon carbide

The identification of new solid-state defect qubit candidates in widely used semiconductors has the potential to enable the use of nanofabricated devices for enhanced qubit measurement and control operations. In particular, the recent discovery of optically active spin states in silicon carbide thin films offers a scalable route for incorporating defect qubits into on-chip photonic devices. Here we demonstrate the use of 3C silicon carbide photonic crystal cavities for enhanced excitation of color center defect spin ensembles in order to increase measured photoluminescence signal count rates, optically detected magnetic resonance signal intensities, and optical spin initialization rates. We observe up to a factor of 30 increase in the photoluminescence and ODMR signals from Ky5 color centers excited by cavity resonant excitation and increase the rate of ground-state spin initialization by approximately a factor of two. Furthermore, we show that the small excitation mode volume and enhanced excitation and collection efficiencies provided by the structures can be used to study inhomogeneous broadening in defect qubit ensembles. These results highlight some of the benefits that nanofabricated devices offer for engineering the local photonic environment of color center defect qubits to enable applications in quantum information and sensing.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Deterministic formation of highly coherent nitrogen-vacancy centers using a focused electron irradiation technique

We demonstrate fully three-dimensional and patterned localization of nitrogen-vacancy (NV) centers in diamond with coherence times in excess of 1 ms. Nitrogen δ-doping during CVD diamond growth vertically confines nitrogen to 4 nm while electron irradiation with a transmission electron microscope (TEM) laterally confines vacancies to less than 1 μm. We characterize the effects of electron energy and dose on NV formation. Importantly, our technique enables the formation of reliably high-quality NV centers inside diamond nanostructures, with applications in quantum information and sensing.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Optical manipulation of Berry phase in a solid-state spin qubit

The phase relation between quantum states represents an essential resource for the storage and processing of quantum information. While quantum phases are commonly controlled dynamically by tuning energetic interactions, utilizing geometric phases that accumulate during cyclic evolution may offer superior robustness to noise. To date, demonstrations of geometric phase control in solid-state systems rely on microwave fields that have limited spatial resolution. Here, we demonstrate an all-optical method based on stimulated Raman adiabatic passage to accumulate a geometric phase, the Berry phase, in an individual nitrogen-vacancy (NV) center in diamond. Using diffraction-limited laser light, we guide the NV center's spin along loops on the Bloch sphere to enclose arbitrary Berry phase and characterize these trajectories through time-resolved state tomography. We investigate the limits of this control due to loss of adiabiaticity and decoherence, as well as its robustness to noise intentionally introduced into the experimental control parameters, finding its resilience to be independent of the amount of Berry phase enclosed. These techniques set the foundation for optical geometric manipulation in future implementations of photonic networks of solid state qubits linked and controlled by light.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Optical polarization of nuclear spins in silicon carbide

We demonstrate optically pumped dynamic nuclear polarization of 29-Si nuclear spins that are strongly coupled to paramagnetic color centers in 4H- and 6H-SiC. The 99 +/- 1% degree of polarization at room temperature corresponds to an effective nuclear temperature of 5 microKelvin. By combining ab initio theory with the experimental identification of the color centers' optically excited states, we quantitatively model how the polarization derives from hyperfine-mediated level anticrossings. These results lay a foundation for SiC-based quantum memories, nuclear gyroscopes, and hyperpolarized probes for magnetic resonance imaging.

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preprint2015arXiv

Persistent Optical Gating of a Topological Insulator

Topological insulators (TIs) have attracted much attention due to their spin-polarized surface and edge states, whose origin in symmetry gives them intriguing quantum-mechanical properties. Robust control over the chemical potential of TI materials is important if these states are to become useful in new technologies, or as a venue for exotic physics. Unfortunately, chemical potential tuning is challenging in TIs in part because the fabrication of electrostatic top-gates tends to degrade material properties and the addition of chemical dopants or adsorbates can cause unwanted disorder. Here, we present an all-optical technique which allows persistent, bidirectional gating of a (Bi,Sb)2Te3 channel by optically manipulating the distribution of electric charge below its interface with an insulating SrTiO3 substrate. In this fashion we optically pattern p-n junctions in a TI material, which we subsequently image using scanning photocurrent microscopy. The ability to dynamically write and re-write mesoscopic electronic structures in a TI may aid in the investigation of the unique properties of the topological insulating phase. The optical gating effect may be adaptable to other material systems, providing a more general mechanism for reconfigurable electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Theoretical model of the dynamic spin polarization of nuclei coupled to paramagnetic point defects in diamond and silicon carbide

Dynamic nuclear spin polarization (DNP) mediated by paramagnetic point defects in semiconductors is a key resource for both initializing nuclear quantum memories and producing nuclear hyperpolarization. DNP is therefore an important process in the field of quantum-information processing, sensitivity-enhanced nuclear magnetic resonance, and nuclear-spin-based spintronics. DNP based on optical pumping of point defects has been demonstrated by using the electron spin of nitrogen-vacancy (NV) center in diamond, and more recently, by using divacancy and related defect spins in hexagonal silicon carbide (SiC). Here, we describe a general model for these optical DNP processes that allows the effects of many microscopic processes to be integrated. Applying this theory, we gain a deeper insight into dynamic nuclear spin polarization and the physics of diamond and SiC defects. Our results are in good agreement with experimental observations and provide a detailed and unified understanding. In particular, our findings show that the defects' electron spin coherence times and excited state lifetimes are crucial factors in the entire DNP process.

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preprint2014arXiv

First-principles theory of the luminescence lineshape for the triplet transition in diamond NV centre

In this work we present theoretical calculations and analysis of the vibronic structure of the spin-triplet optical transition in diamond nitrogen-vacancy centres. The electronic structure of the defect is described using accurate first-principles methods based on hybrid functionals. We devise a computational methodology to determine the coupling between electrons and phonons during an optical transition in the dilute limit. As a result, our approach yields a smooth spectral function of electron-phonon coupling and includes both quasi-localized and bulk phonons on equal footings. The luminescence lineshape is determined via the generating function approach. We obtain a highly accurate description of the luminescence band, including all key parameters such as the Huang-Rhys factor, the Debye-Waller factor, and the frequency of the dominant phonon mode. More importantly, our work provides insight into the vibrational structure of nitrogen vacancy centres, in particular the role of local modes and vibrational resonances. In particular, we find that the pronounced mode at 65 meV is a vibrational resonance, and we quantify localization properties of this mode. These excellent results for the benchmark diamond nitrogen-vacancy centre provide confidence that the procedure can be applied to other defects, including alternative systems that are being considered for applications in quantum information processing.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Isolated electron spins in silicon carbide with millisecond-coherence times

The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries. Nonetheless, because the electronic states of SiC defects can have sharp optical and spin transitions, they are increasingly recognized as a valuable resource for quantum-information and nanoscale-sensing applications. Here, we show that individual electron spin states in highly purified monocrystalline 4H-SiC can be isolated and coherently controlled. Bound to neutral divacancy defects, these states exhibit exceptionally long ensemble Hahn-echo spin coherence, exceeding 1 ms. Coherent control of single spins in a material amenable to advanced growth and microfabrication techniques is an exciting route to wafer-scale quantum technologies.

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preprint2014arXiv

Probing surface noise with depth-calibrated spins in diamond

Sensitive nanoscale magnetic resonance imaging (MRI) of target spins using nitrogen-vacancy (NV) centers in diamond will require a quantitative understanding of dominant noise at the surface. We probe this noise by applying dynamical decoupling to shallow NVs at calibrated depths. Results support a model of NV dephasing by a surface bath of electronic spins having a correlation rate of 200 kHz, much faster than that of the bulk N spin bath. Our method of combining nitrogen delta-doping growth and nanoscale depth imaging paves a way for studying spin noise present in diverse material surfaces.

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preprint2014arXiv

Silicon Carbide Photonic Crystal Cavities with Integrated Color Centers

The recent discovery of color centers with optically addressable spin states in 3C silicon carbide (SiC) similar to the negatively charged nitrogen vacancy center in diamond has the potential to enable the integration of defect qubits into established wafer scale device architectures for quantum information and sensing applications. Here we demonstrate the design, fabrication, and characterization of photonic crystal cavities in 3C SiC films with incorporated ensembles of color centers and quality factor (Q) to mode volume ratios similar to those achieved in diamond. Simulations show that optimized H1 and L3 structures exhibit Q as high as 45,000 and mode volumes of approximately $(λ/n)^{3}$. We utilize the internal color centers as a source of broadband excitation to characterize fabricated structures with resonances tuned to the color center zero phonon line and observe Q in the range of 900-1,500 with narrowband photoluminescence collection enhanced by up to a factor of 10. By comparing the Q factors observed for different geometries with finite-difference time-domain simulations, we find evidence that nonvertical sidewalls are likely the dominant source of discrepancies between our simulated and measured Q factors. These results indicate that defect qubits in 3C SiC thin films show clear promise as a simple, scalable platform for interfacing defect qubits with photonic, optoelectronic, and optomechanical devices.

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preprint2014arXiv

Three-dimensional localization of spins in diamond using 12C implantation

We demonstrate three-dimensional localization of a single nitrogen-vacancy (NV) center in diamond by combining nitrogen doping during growth with a post-growth 12C implantation technique that facilitates vacancy formation in the crystal. We show that the NV density can be controlled by the implantation dose without necessitating increase of the nitrogen incorporation. By implanting a large 12C dose through nanoscale apertures, we can localize an individual NV center within a volume of (~180 nm)**3 at a deterministic position while reproducibly preserving a coherence time (T2) > 300 μs. Our approach enables integration of NV centers into diamond nanostructures to realize scalable spin-sensing devices as well as coherent spin coupling mediated by photons and phonons.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

All-optical control of a solid-state spin using coherent dark states

The study of individual quantum systems in solids, for use as quantum bits (qubits) and probes of decoherence, requires protocols for their initialization, unitary manipulation, and readout. In many solid-state quantum systems, these operations rely on disparate techniques that can vary widely depending on the particular qubit structure. One such qubit, the nitrogen-vacancy (NV) center spin in diamond, can be initialized and read out through its special spin selective intersystem crossing, while microwave electron spin resonance (ESR) techniques provide unitary spin rotations. Instead, we demonstrate an alternative, fully optical approach to these control protocols in an NV center that does not rely on its intersystem crossing. By tuning an NV center to an excited-state spin anticrossing at cryogenic temperatures, we use coherent population trapping and stimulated Raman techniques to realize initialization, readout, and unitary manipulation of a single spin. Each of these techniques can be directly performed along any arbitrarily-chosen quantum basis, removing the need for extra control steps to map the spin to and from a preferred basis. Combining these protocols, we perform measurements of the NV center's spin coherence, a demonstration of this full optical control. Consisting solely of optical pulses, these techniques enable control within a smaller footprint and within photonic networks. Likewise, this approach obviates the need for both ESR manipulation and spin addressability through the intersystem crossing. This method could therefore be applied to a wide range of potential solid-state qubits, including those which currently lack a means to be addressed.

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preprint2013arXiv

Electrically and mechanically tunable electron spins in silicon carbide color centers

The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab-initio simulations, we show that spin-spin interactions within SiC neutral divacancies give rise to spin states with an enhanced Stark effect, sub-10**-6 strain sensitivity, and highly spin-dependent photoluminescence with intensity contrasts of 15-36%. These results establish SiC color centers as compelling systems for sensing nanoscale fields.

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preprint2013arXiv

Fluorescence thermometry enhanced by the quantum coherence of single spins in diamond

We demonstrate fluorescence thermometry techniques with sensitivities approaching 10 mK Hz^(-1/2) based on the spin-dependent photoluminescence of nitrogen vacancy (NV) centers in diamond. These techniques use dynamical decoupling protocols to convert thermally induced shifts in the NV center's spin resonance frequencies into large changes in its fluorescence. By mitigating interactions with nearby nuclear spins and facilitating selective thermal measurements, these protocols enhance the spin coherence times accessible for thermometry by 45x, corresponding to a 7x improvement in the NV center's temperature sensitivity. Moreover, we demonstrate these techniques can be applied over a broad temperature range and in both finite and near-zero magnetic field environments. This versatility suggests that the quantum coherence of single spins could be practically leveraged for sensitive thermometry in a wide variety of biological and microscale systems.

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preprint2013arXiv

Polytype control of spin qubits in silicon carbide

Crystal defects can confine isolated electronic spins and are promising candidates for solid-state quantum information. Alongside research focusing on nitrogen vacancy centers in diamond, an alternative strategy seeks to identify new spin systems with an expanded set of technological capabilities, a materials driven approach that could ultimately lead to "designer" spins with tailored properties. Here, we show that the 4H, 6H and 3C polytypes of SiC all host coherent and optically addressable defect spin states, including spins in all three with room-temperature quantum coherence. The prevalence of this spin coherence shows that crystal polymorphism can be a degree of freedom for engineering spin qubits. Long spin coherence times allow us to use double electron-electron resonance to measure magnetic dipole interactions between spin ensembles in inequivalent lattice sites of the same crystal. Together with the distinct optical and spin transition energies of such inequivalent spins, these interactions provide a route to dipole-coupled networks of separately addressable spins.

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preprint2012arXiv

Electron spin resonance of nitrogen-vacancy centers in optically trapped nanodiamonds

Using an optical tweezers apparatus, we demonstrate three-dimensional control of nanodiamonds in solution with simultaneous readout of ground-state electron-spin resonance (ESR) transitions in an ensemble of diamond nitrogen-vacancy (NV) color centers. Despite the motion and random orientation of NV centers suspended in the optical trap, we observe distinct peaks in the measured ESR spectra qualitatively similar to the same measurement in bulk. Accounting for the random dynamics, we model the ESR spectra observed in an externally applied magnetic field to enable d.c. magnetometry in solution. We estimate the d.c. magnetic field sensitivity based on variations in ESR line shapes to be ~50 microTesla/Hz^1/2. This technique may provide a pathway for spin-based magnetic, electric, and thermal sensing in fluidic environments and biophysical systems inaccessible to existing scanning probe techniques.

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preprint2012arXiv

Engineering shallow spins in diamond with nitrogen delta-doping

We demonstrate nanometer-precision depth control of nitrogen-vacancy (NV) center creation near the surface of synthetic diamond using an in situ nitrogen delta-doping technique during plasma-enhanced chemical vapor deposition. Despite their proximity to the surface, doped NV centers with depths (d) ranging from 5 - 100 nm display long spin coherence times, T2 > 100 \mus at d = 5 nm and T2 > 600 \mus at d \geq 50 nm. The consistently long spin coherence observed in such shallow NV centers enables applications such as atomic-scale external spin sensing and hybrid quantum architectures.

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preprint2012arXiv

Homoepitaxial Growth of Single Crystal Diamond Membranes for Quantum Information Processing

Fabrication of devices designed to fully harness the unique properties of quantum mechanics through their coupling to quantum bits (qubits) is a prominent goal in the field of quantum information processing (QIP). Among various qubit candidates, nitrogen vacancy (NV) centers in diamond have recently emerged as an outstanding platform for room temperature QIP. However, formidable challenges still remain in processing diamond and in the fabrication of thin diamond membranes, which are necessary for planar photonic device engineering. Here we demonstrate epitaxial growth of single crystal diamond membranes using a conventional microwave chemical vapor deposition (CVD) technique. The grown membranes, only a few hundred nanometers thick, show bright luminescence, excellent Raman signature and good NV center electronic spin coherence times. Microdisk cavities fabricated from these membranes exhibit quality factors of up to 3000, overlapping with NV center emission. Our methodology offers a scalable approach for diamond device fabrication for photonics, spintronics, optomechanics and sensing applications.

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preprint2012arXiv

Interplay between ferromagnetism, surface states, and quantum corrections in a magnetically doped topological insulator

The breaking of time-reversal symmetry by ferromagnetism is predicted to yield profound changes to the electronic surface states of a topological insulator. Here, we report on a concerted set of structural, magnetic, electrical and spectroscopic measurements of \MBS thin films wherein photoemission and x-ray magnetic circular dichroism studies have recently shown surface ferromagnetism in the temperature range 15 K $\leq T \leq 100$ K, accompanied by a suppressed density of surface states at the Dirac point. Secondary ion mass spectroscopy and scanning tunneling microscopy reveal an inhomogeneous distribution of Mn atoms, with a tendency to segregate towards the sample surface. Magnetometry and anisotropic magnetoresistance measurements are insensitive to the high temperature ferromagnetism seen in surface studies, revealing instead a low temperature ferromagnetic phase at $T \lesssim 5$ K. The absence of both a magneto-optical Kerr effect and anomalous Hall effect suggests that this low temperature ferromagnetism is unlikely to be a homogeneous bulk phase but likely originates in nanoscale near-surface regions of the bulk where magnetic atoms segregate during sample growth. Although the samples are not ideal, with both bulk and surface contributions to electron transport, we measure a magnetoconductance whose behavior is qualitatively consistent with predictions that the opening of a gap in the Dirac spectrum drives quantum corrections to the conductance in topological insulators from the symplectic to the orthogonal class.

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preprint2010arXiv

Chip-scale nanofabrication of single spins and spin arrays in diamond

We demonstrate a technique to nanofabricate nitrogen vacancy (NV) centers in diamond based on broad-beam nitrogen implantation through apertures in electron beam lithography resist. This method enables high-throughput nanofabrication of single NV centers on sub-100 nm length scales. Secondary ion mass spectroscopy (SIMS) measurements facilitate depth profiling of the implanted nitrogen to provide three-dimensional characterization of the NV center spatial distribution. Measurements of NV center coherence with on-chip coplanar waveguides suggest a pathway for incorporating this scalable nanofabrication technique in future quantum applications.

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preprint2010arXiv

Visualizing Critical Correlations near the Metal-Insulator Transition in Ga1-xMnxAs

Electronic states in disordered conductors on the verge of localization are predicted to exhibit critical spatial characteristics indicative of the proximity to a metal- insulator phase transition. We have used scanning tunneling microscopy to visualize electronic states in Ga1-xMnxAs samples close to this transition. Our measurements show that doping-induced disorder produces strong spatial variations in the local tunneling conductance across a wide range of energies. Near the Fermi energy, where spectroscopic signatures of electron-electron interaction are the most prominent, the electronic states exhibit a diverging spatial correlation length. Power-law decay of the spatial correlations is accompanied by log-normal distributions of the local density of states and multifractal spatial characteristics. Our method can be used to explore critical correlations in other materials close to a quantum critical point.

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preprint2004arXiv

Spin-Photon Dynamics of Quantum Dots in Two-mode Cavities

A quantum dot interacting with two resonant cavity modes is described by a two-mode Jaynes-Cummings model. Depending on the quantum dot energy level scheme, the interaction of a singly doped quantum dot with a cavity photon generates entanglement of electron spin and cavity states or allows one to implement a SWAP gate for spin and photon states. An undoped quantum dot in the same structure generates pairs of polarization entangled photons from an initial photon product state. For realistic cavity loss rates, the fidelity of these operations is of order 80%.

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