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Sejeong Kim

Sejeong Kim contributes to research discovery and scholarly infrastructure.

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Published work

9 published item(s)

preprint2021arXiv

Fabrication of photonic resonators in bulk 4H-SiC

The design and engineering of photonic architectures, suitable to enhance, collect and guide light on chip is needed for applications in quantum photonics and quantum optomechanics. In this work we apply a Faraday cage based oblique angle etch method to fabricate various functional photonic devices from 4H Silicon Carbide - a material that has attracted attention in recent years, due to its potential in optomechanics, nonlinear optics and quantum information. We detail the processing conditions and thoroughly address the geometrical and optical characteristics of the fabricated devices. Employing photoluminescence measurements we demonstrate high quality factors for suspended microring resonators of up to 3500 in the visible range. Such devices will be applicable in the future to augment the properties of SiC in integrated on chip quantum photonics.

preprint2021arXiv

Nanofabrication of high Q, transferable, diamond resonators

Advancement of diamond based photonic circuitry requires robust fabrication protocols of key components, including diamond resonators and cavities. Here, we present 1D (nanobeam) photonic crystal cavities generated from single crystal diamond membranes utilising a metallic tungsten layer as a restraining, conductive and removable hard mask. The use of tungsten instead of a more conventional silicon oxide layer enables good repeatability and reliability of the fabrication procedures. The process yields high quality diamond cavities with quality factors (Q factors) approaching 10$^$4. Finally, we show that the cavities can be picked up and transferred onto a trenched substrate to realise fully suspended diamond cavities. Our fabrication process demonstrates the capability of diamond membranes as modular components for broader diamond based quantum photonic circuitry.

preprint2020arXiv

Anapole resonances in low-index materials

Photonic cavities are valued in current research owing to the multitude of linear and nonlinear effects arising from densely confined light. Cavity designs consisting of low loss dielectric materials can achieve significant light confinement, competitive with other schools of cavity design such as plasmonics. However, the basic concepts in all dielectric photonics such as anapole resonances in nanodisks have been primarily studied in high index materials such as WS2 and Si. Without additional measures, low index dielectric nanodisks struggle to achieve similar levels of light confinement. Here, we present fabricable design space for higher confinement in a low index dielectric cavity by incorporating the extensively studied, isolated dielectric nanodisk into broader host structures. In particular, we focus on hexagonal boron nitride (hBN), a novel dielectric 2D material with bright, room temperature single photon emitters and refractive indices of 2.1 and 1.8 in the inplane and out-of-plane directions. Due to hBN's potential as a quantum light source, we characterise our cavities by their achievable Purcell factors at the anapole resonance. The effects of the supporting structures on the cavity resonances include boosts to the Purcell factor by as much as three-fold to a maximum observed factor of 6.2.

preprint2020arXiv

Grain Dependent Growth of Bright Quantum Emitters in Hexagonal Boron Nitride

Point defects in hexagonal boron nitride have emerged as a promising quantum light source due to their bright and photostable room temperature emission. In this work, we study the incorporation of quantum emitters during chemical vapor deposition growth on a nickel substrate. Combining a range of characterization techniques, we demonstrate that the incorporation of quantum emitters is limited to (001) oriented nickel grains. Such emitters display improved emission properties in terms of brightness and stability. We further utilize these emitters and integrate them with a compact optical antenna enhancing light collection from the sources. The hybrid device yields average saturation count rates of ~2.9 x106 cps and an average photon purity of ~90%. Our results advance the controlled generation of spatially distributed quantum emitters in hBN and demonstrate a key step towards on-chip devices with maximum collection efficiency.

preprint2020arXiv

Large few-layer hexagonal boron nitride flakes for nonlinear optics

Hexagonal boron nitride (hBN) is a layered dielectric material with a wide range of applications in optics and photonics. In this work, we demonstrate a fabrication method for few-layer hBN flakes with areas up to 5000 $\rm μm$. We show that hBN in this form can be integrated with photonic microstructures: as an example, we use a circular Bragg grating (CBG). The layer quality of the exfoliated hBN flake on a CBG is confirmed by second-harmonic generation (SHG) microscopy. We show that the SHG signal is uniform across the hBN sample outside the CBG and is amplified in the centre of the CBG.

preprint2020arXiv

Photonic nanobeam cavities with nano-pockets for efficient integration of fluorescent nanoparticles

Integrating fluorescent nanoparticles with high-Q, small mode volume cavities is indispensable for nanophotonics and quantum technologies. To date, nanoparticles have largely been coupled to evanescent fields of cavity modes, which limits the strength of the interaction. Here, we developed both a cavity design and a fabrication method that enable efficient coupling between a fluorescent nanoparticle and a cavity optical mode. The design consists of a fishbone-shaped, one-dimensional photonic crystal cavity with a nano-pocket located at the electric field maximum of the fundamental optical mode. Furthermore, the presence of a nanoparticle inside the pocket reduces the mode volume substantially and induces subwavelength light confinement. Our approach opens exciting pathways to achieve strong light confinement around fluorescent nanoparticles for applications in energy, sensing, lasing and quantum technologies.

preprint2020arXiv

Valley Polarization Enhancement Induced by a Single Chiral Nanoparticle

Valley polarization is amongst the most critical attributes of atomically thin materials. However, achieving a high contrast from monolayer transition metal dichalcogenides (TMDs) has so far been challenging. In this work, a giant valley polarization contrast up to 45% from a monolayer WS2 has been achieved at room temperature by using a single chiral plasmonic nanoparticle. The increased contrast is attributed to the selective enhancement of both the excitation and the emission rate having one particular handedness of the circular polarization. The experimental results were corroborated by the optical simulation using finite-difference time-domain (FDTD) method. Additionally, the single chiral nanoparticle enabled the observation of valley-polarized luminescence with a linear excitation. Our results provide a promising pathway to enhance valley contrast from monolayer TMDs and utilize them for nanophotonic devices.

preprint2020arXiv

Versatile Direct Writing of Dopants in a Solid State Host Through Recoil Implantation

Modifying material properties at the nanoscale is crucially important for devices in nanoelectronics, nanophotonics and quantum information. Optically active defects in wide band gap materials, for instance, are vital constituents for the realisation of quantum technologies. Yet, the introduction of atomic defects through direct ion implantation remains a fundamental challenge. Herein, we establish a universal method for material doping by exploiting one of the most fundamental principles of physics - momentum transfer. As a proof of concept, we direct-write arrays of emitters into diamond via momentum transfer from a Xe+ focused ion beam (FIB) to thin films of the group IV dopants pre-deposited onto a diamond surface. We conclusively show that the technique, which we term knock-on doping, can yield ultra-shallow dopant profiles localized to the top 5 nm of the target surface, and use it to achieve sub-50 nm lateral resolution. The knock-on doping method is cost-effective, yet very versatile, powerful and universally suitable for applications such as electronic and magnetic doping of atomically thin materials and engineering of near-surface states of semiconductor devices.

preprint2019arXiv

Second-harmonic generation in multilayer hexagonal boron nitride flakes

We report second-harmonic generation (SHG) from thick hexagonal boron nitride (hBN) flakes with approximately 109-111 layers. The resulting effective second-order susceptibility is similar to previously reported few-layer experiments. This confirms that thick hBN flakes can serve as a platform for nonlinear optics, which is useful because thick flakes are easy to exfoliate while retaining a large flake size. We also show spatial second-harmonic maps revealing that SHG remains a useful tool for the characterization of the layer structure even in the case of a large number of layers.