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Sebastien Ollivier

Sebastien Ollivier contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Brain-inspired Cognition in Next Generation Racetrack Memories

Hyperdimensional computing (HDC) is an emerging computational framework inspired by the brain that operates on vectors with thousands of dimensions to emulate cognition. Unlike conventional computational frameworks that operate on numbers, HDC, like the brain, uses high dimensional random vectors and is capable of one-shot learning. HDC is based on a well-defined set of arithmetic operations and is highly error-resilient. The core operations of HDC manipulate HD vectors in bulk bit-wise fashion, offering many opportunities to leverage parallelism. Unfortunately, on conventional Von-Neuman architectures, the continuous movement of HD vectors among the processor and the memory can make the cognition task prohibitively slow and energy-intensive. Hardware accelerators only marginally improve related metrics. On the contrary, only partial implementation of an HDC framework inside memory, using emerging memristive devices, has reported considerable performance/energy gains. This paper presents an architecture based on racetrack memory (RTM) to conduct and accelerate the entire HDC framework within the memory. The proposed solution requires minimal additional CMOS circuitry and uses a read operation across multiple domains in RTMs called transverse read (TR) to realize exclusive-or (XOR) and addition operations. To minimize the overhead the CMOS circuitry, we propose an RTM nanowires-based counting mechanism that leverages the TR operation and the standard RTM operations. Using language recognition as the use case demonstrates 7.8x and 5.3x reduction in the overall runtime and energy consumption compared to the FPGA design, respectively. Compared to the state-of-the-art in-memory implementation, the proposed HDC system reduces the energy consumption by 8.6x.

preprint2022arXiv

PIRM: Processing In Racetrack Memories

The growth in data needs of modern applications has created significant challenges for modern systems leading a "memory wall." Spintronic Domain Wall Memory (DWM), related to Spin-Transfer Torque Memory (STT-MRAM), provides near-SRAM read/write performance, energy savings and nonvolatility, potential for extremely high storage density, and does not have significant endurance limitations. However, DWM's benefits cannot address data access latency and throughput limitations of memory bus bandwidth. We propose PIRM, a DWM-based in-memory computing solution that leverages the properties of DWM nanowires and allows them to serve as polymorphic gates. While normally DWM is accessed by applying spin polarized currents orthogonal to the nanowire at access points to read individual bits, transverse access along the DWM nanowire allows the differentiation of the aggregate resistance of multiple bits in the nanowire, akin to a multilevel cell. PIRM leverages this transverse reading to directly provide bulk-bitwise logic of multiple adjacent operands in the nanowire, simultaneously. Based on this in-memory logic, PIRM provides a technique to conduct multi-operand addition and two operand multiplication using transverse access. PIRM provides a 1.6x speedup compared to the leading DRAM PIM technique for query applications that leverage bulk bitwise operations. Compared to the leading PIM technique for DWM, PIRM improves performance by 6.9x, 2.3x and energy by 5.5x, 3.4x for 8-bit addition and multiplication, respectively. For arithmetic heavy benchmarks, PIRM reduces access latency by 2.1x, while decreasing energy consumption by 25.2x for a reasonable 10% area overhead versus non-PIM DWM.