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Satoshi Heguri

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cond-mat.supr-con cond-mat.str-el cond-mat.mes-hall cond-mat.mtrl-sci physics.chem-ph

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preprint2014arXiv

Development of spatial inhomogeneity of internal magnetic field above $T_{\rm c}$ in Bi $_2$ Sr $_2$ Ca $_{1-x}$ Y $_x$ Cu $_2$ O $_{8+δ}$ observed by longitudinal-field muon-spin-relaxation

Longitudinal-field muon-spin-relaxation measurements have revealed inhomogeneous distribution of the internal magnetic field at temperatures above the bulk superconducting (SC) transition temperature, $T_{\rm c}$ , in slightly overdoped Bi $_2$ Sr $_2$ Ca $_{1-x}$ Y $_x$ Cu $_2$ O $_{8+δ}$ . The distribution width of the internal magnetic field, $Δ$ , evolves continuously with decreasing temperature toward $T_{\rm c}$ . The origin of the increase in $Δ$ is discussed in terms of the creation of SC domains in a sample.

preprint2014arXiv

Electron and Hole Injection via Charge Transfer at the Topological-Insulator $Bi_{2-x}Sb_xTe_{3-y}Se_y$ /Organic-Molecule Interface

As a methodology for controlling the carrier transport of topological insulators (TI's), a flexible tuning in carrier number on the surface states (SS's) of three dimensional TI's by surface modifications using organic molecules is described. The principle of the carrier tuning and its type conversion of TI's presented in this research are based on the charge transfer of holes or electrons at the TI/organic molecule interface. By employing 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) as an electron acceptor or tetracyanoquinodimethane (TCNQ) as a donor for n- and p- Bi2-xSbxTe3-ySey (BSTS) single crystals, successful carrier conversion from n to p and its reverse mode is demonstrated depending on the electron affinities of the molecules. The present method provides a nondestructive and efficient method for local tuning in carrier density of TI's, and is useful for future applications.

preprint2014arXiv

Mobility spectrum analytical approach for intrinsic band picture of Ba(FeAs) $_2$

Unconventional high temperature superconductivity as well as three-dimensional bulk Dirac cone quantum states arising from the unique d-orbital topology has been a recent priority research area in physics. In iron pnictide compounds, although transport phenomena arisen from this multiple band Fermi surface are intriguing and scientifically important, they still do not give an adequate matching to neither experimental observations on the band picture nor theoretical calculations and a debate continues. Here we describe a new analytical approach of mobility spectrum, in which the carrier number is conveniently described as a function of mobility without any hypothesis about the number of carriers, on both longitudinal and transverse transport of high quality single crystal Ba(FeAs) $_2$ in a wide range of magnetic field. We show that the major numbers of carriers reside in large parabolic hole and electron pockets with very different topology as well as remarkably different mobility spectra, while the minor number of Dirac carriers resides in both hole- and electron- Dirac quantum states with the largest mobility as high as 70,000 cm $^2$ (Vs) $^{-1}$ .

preprint2014arXiv

Van der Waals epitaxial growth of topological insulator Bi $_{2-x}$ Sb $_x$ Te $_{3-y}$ Se $_y$ ultrathin nanoplate on electrically insulating fluorophlogopite mica

We report the growth of high quality Bi $_{2-x}$ Sb $_x$ Te $_{3-y}$ Se $_y$ ultrathin nanoplates (BSTS-NPs) on an electrically insulating fluorophlogopite mica substrate using a catalyst-free vapor solid method. Under an optimized pressure and suitable Ar gas flow rate, we control the thickness, the size and the composition of BSTS-NPs. Raman spectra showing systematic change indicate that the thicknesses and compositions of BSTS-NPs are indeed accurately controlled. Electrical transport demonstrates that a robust Dirac cone carrier transport in BSTS-NPs. Since BSTS-NPs provide superior dominant surface transport of the tunable Dirac cone surface states with negligible contribution of the conduction of the bulk states, BSTS-NPs provide an ideal platform to explore intrinsic physical phenomena as well as technological applications of 3-dimensional topological insulators in the future.

preprint2013arXiv

A Field-directional Specific Heat Study on the Gap Structure of Overdoped Ba(Fe $_{1-x}$ Co $_{x}$ ) $_{2}$ As $_{2}$

Low-temperature specific heat is measured on the overdoped Ba(Fe_{1-x}Co_x)_2As_2 (x = 0.13) single crystal under magnetic fields along three different directions. A clear anisotropy is observed on the field dependent electronic specific heat coefficient γ(H). The value of γ(H) is obviously larger with magnetic field along [001] (c-axis) than that within the ab-plane of the crystal lattice, which cannot be attributed to the effect by anisotropy of the upper critical field. Meanwhile, the data show a rather small difference when the direction of the field is rotated from [100] to [110] direction within the ab-plane. Our results suggest that a considerable part of the line nodes is not excited to contribute to the quasiparticle density of states by the field when the field is within the ab-plane. The constraints on the topology of the gap nodes are discussed based on our observations.

preprint2011arXiv

Evidence for line nodes in the energy gap of the overdoped Ba(Fe $_{1-x}$ Co $_{x}$ ) $_{2}$ As $_{2}$ from low-temperature specific heat measurements

Low-temperature specific heat (SH) is measured on Ba(Fe $_{1-x}$ Co $_{x}$ ) $_2$ As $_2$ single crystals in a wide doping region under different magnetic fields. For the overdoped sample, we find the clear evidence for the presence of $T^2$ term in the data, which is absent both for the underdoped and optimal doped samples, suggesting the presence of line nodes in the energy gap of the overdoped samples. Moreover, the field induced electron specific heat coefficient $Δγ(H)$ increases more quickly with the field for the overdoped sample than the underdoped and optimal doped ones, giving another support to our arguments. Our results suggest that the superconducting gap(s) in the present system may have different structures strongly depending on the doping regions.

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Satoshi Heguri

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6 publications

Development of spatial inhomogeneity of internal magnetic field above $T_{\rm c}$ in Bi $_2$ Sr $_2$ Ca $_{1-x}$ Y $_x$ Cu $_2$ O $_{8+δ}$ observed by longitudinal-field muon-spin-relaxation

Electron and Hole Injection via Charge Transfer at the Topological-Insulator $Bi_{2-x}Sb_xTe_{3-y}Se_y$ /Organic-Molecule Interface

Mobility spectrum analytical approach for intrinsic band picture of Ba(FeAs) $_2$

Van der Waals epitaxial growth of topological insulator Bi $_{2-x}$ Sb $_x$ Te $_{3-y}$ Se $_y$ ultrathin nanoplate on electrically insulating fluorophlogopite mica

A Field-directional Specific Heat Study on the Gap Structure of Overdoped Ba(Fe $_{1-x}$ Co $_{x}$ ) $_{2}$ As $_{2}$

Evidence for line nodes in the energy gap of the overdoped Ba(Fe $_{1-x}$ Co $_{x}$ ) $_{2}$ As $_{2}$ from low-temperature specific heat measurements

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Satoshi Heguri

Research overview

Is this your work?

6 publications

Development of spatial inhomogeneity of internal magnetic field above TcT_{\rm c}Tc​ in Bi2_22​Sr2_22​Ca1−x_{1-x}1−x​Yx_xx​Cu2_22​O8+δ_{8+δ}8+δ​ observed by longitudinal-field muon-spin-relaxation

Electron and Hole Injection via Charge Transfer at the Topological-Insulator Bi2−xSbxTe3−ySeyBi_{2-x}Sb_xTe_{3-y}Se_yBi2−x​Sbx​Te3−y​Sey​/Organic-Molecule Interface

Mobility spectrum analytical approach for intrinsic band picture of Ba(FeAs)2_22​

Van der Waals epitaxial growth of topological insulator Bi2−x_{2-x}2−x​Sbx_xx​Te3−y_{3-y}3−y​Sey_yy​ ultrathin nanoplate on electrically insulating fluorophlogopite mica

A Field-directional Specific Heat Study on the Gap Structure of Overdoped Ba(Fe1−x_{1-x}1−x​Cox_{x}x​)2_{2}2​As2_{2}2​

Evidence for line nodes in the energy gap of the overdoped Ba(Fe1−x_{1-x}1−x​Cox_{x}x​)2_{2}2​As2_{2}2​ from low-temperature specific heat measurements

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Building this map preview

Development of spatial inhomogeneity of internal magnetic field above $T_{\rm c}$ in Bi $_2$ Sr $_2$ Ca $_{1-x}$ Y $_x$ Cu $_2$ O $_{8+δ}$ observed by longitudinal-field muon-spin-relaxation

Electron and Hole Injection via Charge Transfer at the Topological-Insulator $Bi_{2-x}Sb_xTe_{3-y}Se_y$ /Organic-Molecule Interface

Mobility spectrum analytical approach for intrinsic band picture of Ba(FeAs) $_2$

Van der Waals epitaxial growth of topological insulator Bi $_{2-x}$ Sb $_x$ Te $_{3-y}$ Se $_y$ ultrathin nanoplate on electrically insulating fluorophlogopite mica

A Field-directional Specific Heat Study on the Gap Structure of Overdoped Ba(Fe $_{1-x}$ Co $_{x}$ ) $_{2}$ As $_{2}$

Evidence for line nodes in the energy gap of the overdoped Ba(Fe $_{1-x}$ Co $_{x}$ ) $_{2}$ As $_{2}$ from low-temperature specific heat measurements