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Katsumi Tanigaki

Katsumi Tanigaki appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.supr-concond-mat.mes-hallphysics.chem-ph

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Published work

21 published item(s)

preprint2023arXiv

Insulator-to-metal Mott transition facilitated by lattice deformation in monolayer $α$-RuCl$_3$ on graphite

Creating heterostructures with graphene/graphite is a practical method for charge-doping $α$-RuCl$_3$, but not sufficient to cause the insulator-to-metal transition. In this study, detailed scanning tunneling microscopy/spectroscopy measurements on $α$-RuCl$_3$ with various lattice deformations reveal that both in-plane and out-of-plane lattice distortions may collapse the Mott-gap in the case of monolayer $α$-RuCl$_3$ in proximity to graphite, but have little impact on its bulk form alone. In the Mott-Hubbard framework, the transition is attributed to the lattice distortion-facilitated substantial modulation of the electron correlation parameter. Observation of the orbital textures on a highly compressed monolayer $α$-RuCl$_3$ flake on graphite provides valuable evidence that electrons are efficiently transferred from the heterointerface into Cl3$p$ orbitals under the lattice distortion. It is believed that the splitting of Ru $t_{2g}$ bands within the trigonal distortion of Ru-Cl-Ru octahedra bonds generated the electrons transfer pathways. The increase of the Cl3$p$ states enhance the hopping integral in the Mott-Hubbard bands, resulting in the Mott-transition. These findings suggest a new route for implementing the insulator-to-metal transition upon doping in $α$-RuCl$_3$ by deforming the lattice in addition to the formation of heterostructure.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Magnetic-field-induced Anderson localization in orbital selective antiferromagnet BaMn$_2$Bi$_2$

We report a metal-insulator transition (MIT) in the half-filled multiorbital antiferromagnet (AF) BaMn$_2$Bi$_2$ that is tunable by a magnetic field perpendicular to the AF sublattices. Instead of an Anderson-Mott mechanism usually expected in strongly correlated systems, we find by scaling analyses that the MIT is driven by an Anderson localization. Electrical and thermoelectrical transport measurements in combination with electronic band calculations reveal a strong orbital-dependent correlation effect, where both weakly and strongly correlated $3d$-derived bands coexist with decoupled charge excitations. Weakly correlated holelike carriers in the $d_{xy}$-derived band dominate the transport properties and exhibit the Anderson localization, whereas other $3d$ bands show clear Mott-like behaviors with their spins ordered into AF sublattices. The tuning role played by the perpendicular magnetic field supports a strong spin-spin coupling between itinerant holelike carriers and the AF fluctuations, which is in sharp contrast to their weak charge coupling.

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preprint2021arXiv

Large negative magnetoresistance in BaMn$_2$Bi$_2$ antiferromagnet

A very large negative magnetoresistance (LNMR) is observed in the insulating regime of the antiferromagnet BaMn$_2$Bi$_2$ when a magnetic field is applied perpendicular to the direction of the sublattice magnetization. High perpendicular magnetic field eventually suppresses the insulating behavior and allows BaMn$_2$Bi$_2$ to re-enter a metallic state. This effect is seemingly unrelated to any field induced magnetic phase transition, as measurements of magnetic susceptibility and specific heat did not find any anomaly as a function of magnetic fields at temperatures above $2\,\mathrm{K}$. The LNMR appears in both current-in-plane and current-out-of-plane settings, and Hall effects suggest that its origin lies in an extreme sensitivity of conduction processes of holelike carriers to the infinitesimal field-induced canting of the sublattice magnetization. The LNMR-induced metallic state may thus be associated with the breaking of the antiferromagnetic parity-time symmetry by perpendicular magnetic fields and/or the intricate multi-orbital electronic structure of BaMn$_2$Bi$_2$.

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preprint2020arXiv

Separate tuning of nematicity and spin fluctuations to unravel the origin of superconductivity in FeSe

The interplay of orbital and spin degrees of freedom is the fundamental characteristic in numerous condensed matter phenomena, including high temperature superconductivity, quantum spin liquids, and topological semimetals. In iron-based superconductors (FeSCs), this causes superconductivity to emerge in the vicinity of two other instabilities: nematic and magnetic. Unveiling the mutual relationship among nematic order, spin fluctuations, and superconductivity has been a major challenge for research in FeSCs, but it is still controversial. Here, by carrying out 77Se nuclear magnetic resonance (NMR) measurements on FeSe single crystals, doped by cobalt and sulfur that serve as control parameters, we demonstrate that the superconducting transition temperature Tc increases in proportion to the strength of spin fluctuations, while it is independent of the nematic transition temperature Tnem. Our observation therefore directly implies that superconductivity in FeSe is essentially driven by spin fluctuations in the intermediate coupling regime, while nematic fluctuations have a marginal impact on Tc.

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preprint2016arXiv

Electric Properties of Dirac Fermions Captured into 3D Nanoporous Graphene Networks

Graphene, as a promising material of post-silicon electronics, opens a new paradigm for the novel electronic properties and device applications. On the other hand, the 2D feature of graphene makes it technically challenging to be integrated into 3D transistors with a sufficient processor capacity. Although there are many attempts to assemble 2D graphene into 3D structures, the characteristics of massless Dirac fermions cannot be well preserved in these materials for transistor applications. Here we report a high-performance graphene transistor by utilizing 3D nanoporous graphene which is comprised of an interconnected single graphene sheet and a commodious open porosity to infuse an ionic liquid for a tunable electronic state by applying electric fields. The 3D nanoporous graphene transistor, with high carrier mobility of 5000-7500 cm$^2$V$^{-1}$s$^{-1}$, exhibits two to three orders of magnitude higher electric conductance and capacitance than those of 2D graphene devices, along with preserved ambipolor electronic nature of Dirac cones. Moreover, the 3D graphene networks with Dirac fermions turn out to exhibit a unique nonlinear Hall resistance in a wide range of the gate voltages. The high quality 3D nanoporous graphene EDLT may open a new field for utilizing Dirac fermions in 3D network structures for various fundamental and practical applications.

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preprint2016arXiv

In-plane Topological p-n Junction in the Three-Dimensional Topological Insulator Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$

A topological p-n junction (TPNJ) is an important concept to control spin and charge transport on a surface of three dimensional topological insulators (3D-TIs). Here we report successful fabrication of such TPNJ on a surface of 3D-TI Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ thin films and experimental observation of the electrical transport. By tuning the chemical potential of n-type topological Dirac surface of BSTS on its top half by employing tetrafluoro-7,7,8,8-tetracyanoquinodimethane as an organic acceptor molecule, a half surface can be converted to p-type with leaving the other half side as the opposite n-type, and consequently TPNJ can be created. By sweeping the back-gate voltage in the field effect transistor structure, the TPNJ was controlled both on the bottom and the top surfaces. A dramatic change in electrical transport observed at the TPNJ on 3D-TI thin films promises novel spin and charge transport of 3D-TIs for future spintronics.

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preprint2016arXiv

Non-Fermi liquid behavior of electrical resistivity close to the nematic critical point in Fe$_{1-x}$Co$_x$Se and FeSe$_{1-y}$S$_y$

Temperature dependence of resistivity of single crystals of Fe$_{1-x}$Co$_x$Se and FeSe$_{1-y}$S$_y$ is studied in detail under zero and high magnetic field (magnetoresistance), the latter of which enables to monitor the temperature ($T$) evolution of resistivity below the onset of superconducting transition temperature ($T_{\rm c}$). In FeSe$_{1-y}$S$_y$, $T$-linear dependence of resistivity is prominent in $y$ = 0.160 below 40 K, whereas it changes to a Fermi-liquid(FL)-like $T^2$ one below 10 K in $y$ = 0.212. These suggest that the quantum critical point (QCP) originating from the electronic nematicity resides around $y$ = 0.160 and the fluctuation in QCP gives rise anomalous $T$-linear dependence in resistivity in a wide $T$ range. In Fe$_{1-x}$Co$_x$Se, resistivity gradually changes from linear- to quadratic- $T$-dependent one at low temperatures in the range between $x$ = 0.036 and 0.075. These could be interpreted by scenarios of both the nematic QCP and the crossover in the ground states between the orthorhombic nematic phase and the tetragonal phase. The anomalies found as $T$-linear resistivity are discussed in terms of orbital and spin fluctuation arising from the nematic QCP.

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preprint2015arXiv

Competitive interfacial charge transfer to graphene from the electrode contacts and surface adsorbates

Charge transfer (CT) at metal-graphene contacts induces a potential variation from the contact edges that extends to ~1 micrometer. Potential variations with a similar length should be observed around charge-transferring surface adsorbates. Thus, it is expected that a competition exists between these two CT sources when one source is within ~1 micrometer from the other. In this letter, weakly-coupled Ni contacts and 7,7,8,8-tetracyanoquinodimethan molecules are employed as the CT sources to investigate their possible competition. The CT from the molecules adsorbed only in the channel region change the charge density of the graphene in the under-contact regions. The extent of the CT effect in the under-contact region is as long as ~4 micrometers. The considerably long CT is ascribed to the high effective dielectric constant of the graphene under the contacts, resulting from a thin interfacial NiOx layer containing carbon impurities acquired from the graphene.

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preprint2015arXiv

Gap Structure of the Overdoped Iron-Pnictide Superconductor Ba(Fe$_{0.942}$Ni$_{0.058}$)$_{2}$As$_{2}$: A Low-Temperature Specific-Heat Study

Low-temperature specific heat (SH) is measured on the postannealed Ba(Fe_{1-x}Ni_x)_2As_2 single crystal with x = 0.058 under different magnetic fields. The sample locates on the overdoped sides and the critical transition temperature is determined to be 14.8 K by both the magnetization and SH measurements. A simple and reliable analysis shows that, besides the phonon and normal electronic contributions, a clear T2 termemerges in the low temperature SH data.Our observation is similar to that observed in the Co-doped system in our previous work and is consistent with the theoretical prediction for a superconductor with line nodes in the energy gap.

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preprint2014arXiv

Electron and Hole Injection via Charge Transfer at the Topological-Insulator $Bi_{2-x}Sb_xTe_{3-y}Se_y$/Organic-Molecule Interface

As a methodology for controlling the carrier transport of topological insulators (TI's), a flexible tuning in carrier number on the surface states (SS's) of three dimensional TI's by surface modifications using organic molecules is described. The principle of the carrier tuning and its type conversion of TI's presented in this research are based on the charge transfer of holes or electrons at the TI/organic molecule interface. By employing 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) as an electron acceptor or tetracyanoquinodimethane (TCNQ) as a donor for n- and p- Bi2-xSbxTe3-ySey (BSTS) single crystals, successful carrier conversion from n to p and its reverse mode is demonstrated depending on the electron affinities of the molecules. The present method provides a nondestructive and efficient method for local tuning in carrier density of TI's, and is useful for future applications.

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preprint2014arXiv

Mobility spectrum analytical approach for intrinsic band picture of Ba(FeAs)$_2$

Unconventional high temperature superconductivity as well as three-dimensional bulk Dirac cone quantum states arising from the unique d-orbital topology has been a recent priority research area in physics. In iron pnictide compounds, although transport phenomena arisen from this multiple band Fermi surface are intriguing and scientifically important, they still do not give an adequate matching to neither experimental observations on the band picture nor theoretical calculations and a debate continues. Here we describe a new analytical approach of mobility spectrum, in which the carrier number is conveniently described as a function of mobility without any hypothesis about the number of carriers, on both longitudinal and transverse transport of high quality single crystal Ba(FeAs)$_2$ in a wide range of magnetic field. We show that the major numbers of carriers reside in large parabolic hole and electron pockets with very different topology as well as remarkably different mobility spectra, while the minor number of Dirac carriers resides in both hole- and electron- Dirac quantum states with the largest mobility as high as 70,000 cm$^2$(Vs)$^{-1}$.

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preprint2014arXiv

Path of the current flow at the metal contacts of graphene field-effect transistors with distorted transfer characteristics

Graphene field-effect transistors with source/drain contacts made of metals that can be easily oxidized such as ferromagnetic metals often display a double dip structure in the transfer characteristics because of charge density depinning at the contacts. Generally, transfer characteristics of field-effect transistors show no dependence on the length of the source/drain contacts because charge carrier injection occurs mainly at the edges of the contact. However, the shape of the transfer characteristics of devices fabricated using Ni contacts is found to be dependent on the length of the contact. This peculiar behavior was attributed to charge carrier injection from near the center of the contacts. This is because of oxygen diffusion and the resultant formation of an interfacial oxide layer of non-uniform thickness. The observed contact length dependent transfer characteristics were reproduced using a model calculation that includes charge carrier injection from the center of the electrode and subsequent charge transport underneath the metal contact.

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preprint2014arXiv

Reversible Switching of Charge Injection Barriers at Metal/Organic-Semiconductor Contacts Modified with Structurally Disordered Molecular Monolayers

Metal/semiconductor interfaces govern the operation of semiconductor devices through the formation of charge injection barriers that can be controlled by tuning the metal work function. However, the controlling ability is typically limited to being static. We show that a dynamic nature can be imparted to the interfaces using electrode surface modification with a structurally disordered molecular monolayer. The barrier height at the interfaces is altered significantly in a reversible way by an external electric field. As a result, a dramatic change in the carrier transport properties through the interfaces is observed, such as a reversible polarity reversion of metal/organic-semiconductor/metal diodes.

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preprint2014arXiv

Van der Waals epitaxial growth of topological insulator Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ ultrathin nanoplate on electrically insulating fluorophlogopite mica

We report the growth of high quality Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ ultrathin nanoplates (BSTS-NPs) on an electrically insulating fluorophlogopite mica substrate using a catalyst-free vapor solid method. Under an optimized pressure and suitable Ar gas flow rate, we control the thickness, the size and the composition of BSTS-NPs. Raman spectra showing systematic change indicate that the thicknesses and compositions of BSTS-NPs are indeed accurately controlled. Electrical transport demonstrates that a robust Dirac cone carrier transport in BSTS-NPs. Since BSTS-NPs provide superior dominant surface transport of the tunable Dirac cone surface states with negligible contribution of the conduction of the bulk states, BSTS-NPs provide an ideal platform to explore intrinsic physical phenomena as well as technological applications of 3-dimensional topological insulators in the future.

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preprint2013arXiv

A Field-directional Specific Heat Study on the Gap Structure of Overdoped Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$

Low-temperature specific heat is measured on the overdoped Ba(Fe_{1-x}Co_x)_2As_2 (x = 0.13) single crystal under magnetic fields along three different directions. A clear anisotropy is observed on the field dependent electronic specific heat coefficient γ(H). The value of γ(H) is obviously larger with magnetic field along [001] (c-axis) than that within the ab-plane of the crystal lattice, which cannot be attributed to the effect by anisotropy of the upper critical field. Meanwhile, the data show a rather small difference when the direction of the field is rotated from [100] to [110] direction within the ab-plane. Our results suggest that a considerable part of the line nodes is not excited to contribute to the quasiparticle density of states by the field when the field is within the ab-plane. The constraints on the topology of the gap nodes are discussed based on our observations.

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preprint2013arXiv

Photo-oxidation of Graphene in the Presence of Water

Oxygen molecules are found to exhibit non-negligible reactivity with graphene under strong light irradiation in the presence of water. The reaction is triggered by the laser Raman spectroscopy measurement itself, and the D band (ca. 1340 cm-1) becomes larger as the laser irradiation is prolonged. The electronic transport properties of the graphene derivative are also investigated and both the electron and hole mobility are found to be reduced. These results are attributed to oxidation of graphene. This primitive modification method can be exploited to manipulate the structural and electronic properties of graphene.

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preprint2012arXiv

Observation of Negative Contact Resistances in Graphene Field-Effect Transistors

The gate-voltage (VG) dependence of the contact resistance (RC) in graphene field-effect transistors is characterized by the transmission line model. The RC-VG characteristics of Ag, Cu, and Au contacts display a dip around the charge neutrality point, and become even negative with Ag contacts. The dip structure is well reproduced by a model calculation that considers a metal-contact-induced potential variation near the metal contact edges. The apparently negative RC originates with the carrier doping from the metal contacts to the graphene channel and appears when the doping effect is more substantial than the actual contact resistance precisely at the contacts. The negative RC can appear at the metal contacts to Dirac-cone systems such as graphene.

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preprint2011arXiv

Electron and hole Dirac cone states in-pairs in Ba(FeAs)$_2$ confirmed by magnetoresistance

The quantum transport of Dirac cone states in the iron pnictide Ba(FeAs)$_2$ with a d-\,multiband system is studied by using single crystal samples. The transverse magnetoresistance develops linearly against magnetic field at low temperatures. The transport phenomena are interpreted in terms of the 0$^{th}$ Landau level by applying the theory predicted by Abrikosov. The results of the semiclassical analyses of a two carrier system under low magnetic field limit show that both electron and hole reside as the high mobility states, being indicative to the fact that both electron- and hole Dirac cone states should be taken into account in pairs for having the real interpretation of low temperature electronic states in iron pnictides, being in contrast to the previous reports.

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preprint2011arXiv

Evidence for line nodes in the energy gap of the overdoped Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$ from low-temperature specific heat measurements

Low-temperature specific heat (SH) is measured on Ba(Fe$_{1-x}$Co$_{x}$)$_2$As$_2$ single crystals in a wide doping region under different magnetic fields. For the overdoped sample, we find the clear evidence for the presence of $T^2$ term in the data, which is absent both for the underdoped and optimal doped samples, suggesting the presence of line nodes in the energy gap of the overdoped samples. Moreover, the field induced electron specific heat coefficient $Δγ(H)$ increases more quickly with the field for the overdoped sample than the underdoped and optimal doped ones, giving another support to our arguments. Our results suggest that the superconducting gap(s) in the present system may have different structures strongly depending on the doping regions.

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preprint2010arXiv

Charge-density depinning at metal contacts of graphene field-effect transistors

An anomalous distortion is often observed in the transfer characteristics of graphene field-effect transistors. We fabricate graphene transistors with ferromagnetic metal electrodes, which reproducibly display distorted transfer characteristics, and show that the distortion is caused by metal-graphene contacts with no charge-density pinning effect. The pinning effect, where the gate voltage cannot tune the charge density of graphene at the metal electrodes, has been experimentally observed; however, a pinning-free interface is achieved with easily-oxidizable metals. The distortion should be a serious problem for flexible electronic devices with graphene.

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preprint2010arXiv

Superconductivity induced by doping Platinum in BaFe2As2

By substituting Fe with the 5d-transition metal Pt in BaFe2As2, we have successfully synthesized the superconductors BaFe2-xPtxAs2. The systematic evolution of the lattice constants indicates that the Fe ions were successfully replaced by Pt ions. By increasing the doping content of Pt, the antiferromagnetic order and structural transition of the parent phase is suppressed and superconductivity emerges at a doping level of about x = 0.02. At a doping level of x = 0.1, we get a maximum transition temperature Tc of about 25 K. The synchrotron powder x-ray diffraction shows that the resistivity anomaly is in good agreement with the structural transition. The superconducting transitions at different magnetic fields were also measured at the doping level of about x = 0.1, yielding a slope of -dHc2/dT = 5.4 T/K near Tc. A phase diagram was established for the Pt doped 122 system. Our results suggest that superconductivity can also be easily induced in the FeAs family by substituting the Fe with Pt, with almost the similar maximum transition temperatures as doping Ni, Co, Rh and Ir.

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