Researcher profile

Santosh Raghavan

Santosh Raghavan contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2014arXiv

Correlation between metal-insulator transitions and structural distortions in high-electron-density SrTiO3 quantum wells

The electrical and structural characteristics of SmTiO3/SrTiO3/SmTiO3 and GdTiO3/SrTiO3/GdTiO3 heterostructures are compared. Both types of structures contain narrow SrTiO3 quantum wells, which accommodate a confined, high-density electron gas. As shown previously [Phys. Rev. B 86, 201102(R) (2012)] SrTiO3 quantum wells embedded in GdTiO3 show a metal-to-insulator transition when their thickness is reduced so that they contain only two SrO layers. In contrast, quantum wells embedded in SmTiO3 remain metallic down to a single SrO layer thickness. Symmetry-lowering structural distortions, measured by quantifying the Sr-column displacements, are present in the insulating quantum wells, but are either absent or very weak in all metallic quantum wells, independent of whether they are embedded in SmTiO3 or in GdTiO3. We discuss the role of orthorhombic distortions, orbital ordering, and strong electron correlations in the transition to the insulating state.

preprint2013arXiv

Magnetism and local structure in low-dimensional, Mott insulating GdTiO3

Cation displacements, oxygen octahedral tilts, and magnetism of epitaxial, ferrimagnetic, insulating GdTiO3 films sandwiched between cubic SrTiO3 layers are studied using scanning transmission electron microscopy and magnetization measurements. With decreasing GdTiO3 film thickness, structural (GdFeO3-type) distortions are reduced, concomitant with a reduction in the Curie temperature. Ferromagnetism persists to smaller deviations from the cubic perovskite structure than is the case for the bulk rare earth titanates. The results indicate that the FM ground state is controlled by the narrow bandwidth, exchange and orbital ordering, and only to second order depends on amount of the GdFeO3-type distortion.

preprint2013arXiv

Subband structure of two-dimensional electron gases in SrTiO3

Tunneling between two parallel, two-dimensional electron gases (2DEGs) in a complex oxide heterostructure containing a large, mobile electron density of ~ 3x10^14 cm^-2 is used to probe the subband structure of the 2DEGs. Temperature-dependent current-voltage measurements are performed on SrTiO3/GdTiO3/SrTiO3 junctions, where GdTiO3 serves as the tunnel barrier, and each interface contains a high-density 2DEG. Resonant tunneling features in the conductance and its derivative occur when subbands on either side of the barrier align in energy as the applied bias is changed, and are used to analyze subband energy spacings in the two 2DEGs. We show that the results agree substantially with recent theoretical predictions for such interfaces.