BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Jack Y. Zhang

Jack Y. Zhang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.str-elcond-mat.mtrl-scicond-mat.mes-hall

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
6works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

6 published item(s)

preprint2014arXiv

Correlation between metal-insulator transitions and structural distortions in high-electron-density SrTiO3 quantum wells

The electrical and structural characteristics of SmTiO3/SrTiO3/SmTiO3 and GdTiO3/SrTiO3/GdTiO3 heterostructures are compared. Both types of structures contain narrow SrTiO3 quantum wells, which accommodate a confined, high-density electron gas. As shown previously [Phys. Rev. B 86, 201102(R) (2012)] SrTiO3 quantum wells embedded in GdTiO3 show a metal-to-insulator transition when their thickness is reduced so that they contain only two SrO layers. In contrast, quantum wells embedded in SmTiO3 remain metallic down to a single SrO layer thickness. Symmetry-lowering structural distortions, measured by quantifying the Sr-column displacements, are present in the insulating quantum wells, but are either absent or very weak in all metallic quantum wells, independent of whether they are embedded in SmTiO3 or in GdTiO3. We discuss the role of orthorhombic distortions, orbital ordering, and strong electron correlations in the transition to the insulating state.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Gaps and pseudo-gaps at the Mott quantum Critical point in the perovskite rare earth nickelates

We report on tunneling measurements that reveal for the first time the evolution of the quasi-particle state density across the bandwidth controlled Mott metal to insulator transition in the rare earth perovskite nickelates. In this, a canonical class of transition metal oxides, we study in particular two materials close to the T=0 metal-insulator transition: NdNiO3 , an antiferromagnetic insulator, and LaNiO3, a correlated metal. We measure a sharp gap in NdNiO3, which has an insulating ground state, of ~ 30 meV. Remarkably, metallic LaNiO3 exhibits a pseudogap of the same order that presages the metal insulator transition. The smallness of both the gap and pseudogap suggests they arise from a common origin: proximity to a quantum critical point at or near the T=0 metal-insulator transition. It also supports theoretical models of the quantum phase transition in terms of spin and charge instabilities of an itinerant Fermi surface.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

High-density two-dimensional small polaron gas in a delta-doped Mott insulator

Heterointerfaces in complex oxide systems open new arenas in which to test models of strongly correlated material, explore the role of dimensionality in metal-insulator-transitions (MITs) and small polaron formation. Close to the quantum critical point Mott MITs depend on band filling controlled by random disordered substitutional doping. Delta-doped Mott insulators are potentially free of random disorder and introduce a new arena in which to explore the effect of electron correlations and dimensionality. Epitaxial films of the prototypical Mott insulator GdTiO3 are delta-doped by substituting a single (GdO)+1 plane with a monolayer of charge neutral SrO to produce a two-dimensional system with high planar doping density. Unlike metallic SrTiO3 quantum wells in GdTiO3 the single SrO delta-doped layer exhibits thermally activated DC and optical conductivity that agree in a quantitative manner with predictions of small polaron transport but with an extremely high two-dimensional density of polarons, ~ 7E14 cm-2

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Magnetism and local structure in low-dimensional, Mott insulating GdTiO3

Cation displacements, oxygen octahedral tilts, and magnetism of epitaxial, ferrimagnetic, insulating GdTiO3 films sandwiched between cubic SrTiO3 layers are studied using scanning transmission electron microscopy and magnetization measurements. With decreasing GdTiO3 film thickness, structural (GdFeO3-type) distortions are reduced, concomitant with a reduction in the Curie temperature. Ferromagnetism persists to smaller deviations from the cubic perovskite structure than is the case for the bulk rare earth titanates. The results indicate that the FM ground state is controlled by the narrow bandwidth, exchange and orbital ordering, and only to second order depends on amount of the GdFeO3-type distortion.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Nanoscale Quantification of Octahedral Tilts in Perovskite Films

NiO6-octahedral tilts in ultrathin LaNiO3 films were studied using position averaged convergent beam electron diffraction (PACBED) in scanning transmission electron microscopy. Both the type and magnitude of the octahedral tilts were determined by comparing PACBED experiments to frozen phonon multislice simulations. It is shown that the out-of-plane octahedral tilt of an epitaxial film under biaxial tensile stress (0.78 % in-plane tensile strain) increases by ~ 20%, while the in-plane rotation decreases by ~ 80%, compared to the unstrained bulk material.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces

Heterostructures and superlattices consisting of a prototype Mott insulator, GdTiO3, and the band insulator SrTiO3 are grown by molecular beam epitaxy and show intrinsic electronic reconstruction, approximately 1/2 electron per surface unit cell at each GdTiO3/SrTiO3 interface. The sheet carrier densities in all structures containing more than one unit cell of SrTiO3 are independent of layer thicknesses and growth sequences, indicating that the mobile carriers are in a high concentration, two-dimensional electron gas bound to the interface. These carrier densities closely meet the electrostatic requirements for compensating the fixed charge at these polar interfaces. Based on the experimental results, insights into interfacial band alignments, charge distribution and the influence of different electrostatic boundary conditions are obtained.

0 citations0 reviewsNo code linkedOpen access