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Researcher profile

Sanjay K. Banerjee

Sanjay K. Banerjee contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elphysics.chem-ph

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Published work

34 published item(s)

preprint2016arXiv

A sub-1-volt analog metal oxide memristive-based synaptic device for energy-efficient spike-based computing systems

Nanoscale metal oxide memristors have potential in the development of brain-inspired computing systems that are scalable and efficient1-3. In such systems, memristors represent the native electronic analogues of the biological synapses. However, the characteristics of the existing memristors do not fully support the key requirements of synaptic connections: high density, adjustable weight, and low energy operation. Here we show a bilayer memristor that is forming-free, low-voltage (~|0.8V|), energy-efficient (full On/Off switching at ~2pJ), and reliable. Furthermore, pulse measurements reveal the analog nature of the memristive device, that is it can be directly programmed to intermediate resistance states. Leveraging this finding, we demonstrate spike-timing-dependent plasticity (STDP), a spike-based Hebbian learning rule4. In those experiments, the memristor exhibits a marked change in the normalized synaptic strength (>30 times) when the pre- and post-synaptic neural spikes overlap. This demonstration is an important step towards the physical construction of high density and high connectivity neural networks.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer $MoS_{2}$ by Amorphous $TiO_{x}$ Encapsulation

To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D transition metal dichalcogenides (TMDs), considerable effort has been put into exploring various doping techniques and dielectric engineering using $high-κ$ oxides, respectively. The goal of this work is to demonstrate a $high-κ$ dielectric that serves as an effective n-type charge transfer dopant on monolayer (ML) molybdenum disulfide ($MoS_{2}$). Utilizing amorphous titanium suboxide (ATO) as the '$high-κ$ dopant', we achieved a contact resistance of ~ $180$ $Ω.μm$ which is the lowest reported value for ML $MoS_{2}$. An ON current as high as $240$ $μA/μm$ and field effect mobility as high as $83$ $cm^2/V-s$ were realized using this doping technique. Moreover, intrinsic mobility as high as $102$ $cm^2/V-s$ at $300$ $K$ and $501$ $cm^2/V-s$ at $77$ $K$ were achieved after ATO encapsulation which are among the highest mobility values reported on ML $MoS_{2}$. We also analyzed the doping effect of ATO films on ML $MoS_{2}$, a phenomenon which is absent when stoichiometric $TiO_{2}$ is used, using ab initio density functional theory (DFT) calculations which shows excellent agreement with our experimental findings. Based on the interfacial-oxygen-vacancy mediated doping as seen in the case of $high-κ$ ATO - ML $MoS_{2}$, we propose a mechanism for the mobility enhancement effect observed in TMD-based devices after encapsulation in a $high-κ$ dielectric environment.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

DFT Simulations of Inter-Graphene-Layer Coupling with Rotationally Misaligned hBN Tunnel Barriers in Graphene/hBN/Graphene Tunnel FETs

Van der Waal's heterostrucutures allow for novel devices such as two-dimensional-to-two-dimensional tunnel devices, exemplified by interlayer tunnel FETs. These devices employ channel/tunnel-barrier/channel geometries. However, during layer-by-layer exfoliation of these multi-layer materials, rotational misalignment is the norm and may substantially affect device characteristics. In this work, by using density functional theory methods, we consider a reduction in tunneling due to weakened coupling across the rotationally misaligned interface between the channel layers and the tunnel barrier. As a prototypical system, we simulate the effects of rotational misalignment of the tunnel barrier layer between aligned channel layers in a graphene/hBN/graphene system. We find that rotational misalignment between the channel layers and the tunnel barrier in this van der Waal's heterostructure can significantly reduce coupling between the channels by reducing, specifically, coupling across the interface between the channels and the tunnel barrier. This weakened coupling in graphene/hBN/graphene with hBN misalignment may be relevant to all such van der Waal's heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Ensemble Monte Carlo for III-V and Si n-channel FinFETs considering non-equilibrium degenerate statistics and quantum-confined scattering

Particle-based ensemble semi-classical Monte Carlo (MC) methods employ quantum corrections (QCs) to address quantum confinement and degenerate carrier populations to model tomorrow's ultra-scaled MOSFETs. Here we present new approaches to quantum confinement and carrier degeneracy effects in a three-dimensional (3D) MC device simulator, and illustrate their significance through simulation of n-channel Si and III-V FinFETs. Original contributions include our treatment of far-from-equilibrium degenerate statistics and QC-based modeling of surface-roughness scattering, as well as considering quantum-confined phonon and impurity scattering in 3D. Typical MC simulations approximate degenerate carrier populations as Fermi distributions to model the Pauli-blocking (PB) of scattering to occupied final states. To allow for increasingly far-from-equilibrium non-Fermi carrier distributions in ultra-scaled devices, we instead generate the final-state occupation probabilities used for PB by sampling the local carrier populations as a function of energy and energy valley. This process is aided by the use of fractional carriers or sub-carriers, which minimizes classical carrier-carrier scattering. Quantum confinement effects are addressed through quantum-correction potentials (QCPs) generated from Schrödinger-Poisson solvers, as commonly done. However, we use our valley- and orientation-dependent QCPs not just to redistribute carriers in real space, or even among energy valleys, but also to calculate confinement-dependent phonon, impurity, and surface-roughness scattering rates. FinFET simulations are used to illustrate how, collectively, these quantum effects can substantially reduce and even eliminate otherwise expected benefits of In$_{\text{0.53}}$Ga$_{\text{0.47}}$As FinFETs over otherwise identical Si FinFETs, despite higher thermal velocities in In$_{\text{0.53}}$Ga$_{\text{0.47}}$As.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Large Magnetoresistance at Room Temperature in Ferromagnet/Topological Insulator Contacts

We report magnetoresistance for current flow through iron/topological insulator (Fe/TI) and Fe/evaporated-oxide/TI contacts when a magnetic field is used to initially orient the magnetic alignment of the incorporated ferromagnetic Fe bar, at temperatures ranging from 100 K to room temperature. This magnetoresistance is associated with the relative orientation of the Fe bar magnetization and spin-polarization of electrons moving on the surface of the TI with helical spin-momentum locking. The magnitude of the observed magnetoresistance is relatively large compared to that observed in prior work.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Shubnikov-de Haas oscillations of high mobility holes in monolayer and bilayer WSe$_2$: Landau level degeneracy, effective mass, and negative compressibility

We study the magnetotransport properties of high mobility holes in monolayer and bilayer WSe$_2$, which display well defined Shubnikov-de Haas (SdH) oscillations, and quantum Hall states (QHSs) in high magnetic fields. In both mono and bilayer WSe$_2$, the SdH oscillations and the QHSs occur predominantly at even filling factors, evincing a two-fold Landau level degeneracy. The Fourier transform analysis of the SdH oscillations in bilayer WSe$_2$ reveal the presence of two subbands localized in the top or the bottom layer, as well as negative compressibility. From the temperature dependence of the SdH oscillations we determine a hole effective mass of $0.45m_{0}$ for both mono and bilayer WSe$_2$.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Theoretical and experimental investigation of vacancy-based doping of monolayer MoS$_2$ on oxide

Monolayer transition metal dichalcogenides are novel, gapped two-dimensional materials. Toward device applications, we consider MoS$_2$ layers on dielectrics, in particular in this work, the effect of vacancies on the electronic structure. In density-functional based simulations, we consider the effects of near-interface O vacancies in the oxide slab, and Mo or S vacancies in the MoS$_2$ layer. Band structures and atom-projected densities of states for each system and with differing oxide terminations were calculated, as well as those for the defect-free MoS$_2$-dielectrics system and for isolated dielectric layers for reference. Among our results, we find that with O vacancies, both the Hf-terminated HfO$_2$-MoS$_2$ system, and the O-terminated and H-passivated Al$_2$O$_3$-MoS$_2$ systems appear metallic due to doping of the oxide slab followed by electron transfer into the MoS$_2$, in manner analogous to modulation doping. The n-type doping of monolayer MoS$_2$ by high-k oxides with oxygen vacancies then is experimentally demonstrated by electrically and spectroscopically characterizing back-gated monolayer MoS$_2$ field effect transistors encapsulated by oxygen deficient alumina and hafnia.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Voltage Controlled Magnetic Anisotropy Based Low Energy Switching of a Ferromagnet on a Topological Insulator

We present a novel memory device that consists of a thin ferromagnetic layer of Fe deposited on topological insulator thin film, Bi2Se3. The ferromagnetic layer has perpendicular anisotropy, due to MgO deposited on the top surface of Fe. When current is passed on the surface of Bi2Se3, the surface of the Bi2Se3 becomes spin polarized and strong exchange interaction occurs between the d electrons in the ferromagnet and the electrons conducting the current on the surface of the Bi2Se3. Part of the current is shunted through the ferromagnet which generates spin transfer torque in the ferromagnet. The combination of the spin transfer torque and exchange interaction torque along with voltage-controlled magnetic anisotropy (VCMA) allows ultralow-energy switching of the ferromagnet. We perform micromagnetic simulations and predict switching time of the order of 2.5 ns and switching energy of the order of 0.45fJ for a ferromagnetic bit with thermal stability of 43kBT. Such ultralow-energy and high-speed VCMA-induced switching of a perpendicular anisotropy ferromagnet on a topological insulator could be utilized for energy-efficient memory design.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Voltage-Controlled Low-Energy Switching of Nanomagnets through Ruderman-Kittel-Kasuya-Yosida Interactions for Magnetoelectric Device Applications

In this letter, we consider through simulation Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions between nanomagnets sitting on a conductive surface, and voltage-controlled gating thereof for low-energy switching of nanomagnets for possible memory and nonvolatile logic applications. For specificity, we consider nanomagnets with perpendicular anisotropy on a three-dimensional topological insulator. We model the possibility and dynamics of RKKY-based switching of one nanomagnet by coupling to one or more nanomagnets of set orientation. Applications for both memory and nonvolatile logic are considered, with follower, inverter and majority gate functionality shown. Sub-attojoule switching energies, far below conventional spin transfer torque (STT)-based memories and even below CMOS logic appear possible. Switching times on the order of a few nanoseconds, comparable to times for STT switching, are estimated for ferromagnetic nanomagnets.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Weak Antilocalization and Universal Conductance Fluctuations in Bismuth Telluro-Sulfide Topological Insulators

We report on van der Waals epitaxial growth, materials characterization and magnetotransport experiments in crystalline nanosheets of Bismuth Telluro-Sulfide (BTS). Highly layered, good-quality crystalline nanosheets of BTS are obtained on SiO$_2$ and muscovite mica. Weak-antilocalization (WAL), electron-electron interaction-driven insulating ground state and universal conductance fluctuations are observed in magnetotransport experiments on BTS devices. Temperature, thickness and magnetic field dependence of the transport data indicate the presence of two-dimensional surface states along with bulk conduction, in agreement with theoretical models. An extended-WAL model is proposed and utilized in conjunction with a two-channel conduction model to analyze the data, revealing a surface component and evidence of multiple conducting channels. A facile growth method and detailed magnetotransport results indicating BTS as an alternative topological insulator material system are presented.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Perpendicular magnetic anisotropy and spin glass-like behavior in molecular beam epitaxy grown chromium telluride thin films

Reflection high energy electron diffraction (RHEED), scanning tunneling microscopy (STM), vibrating sample magnetometry and other physical property measurements are used to investigate the structure, morphology, magnetic and magneto-transport properties of (001)-oriented Cr$_2$Te$_3$ thin films grown on Al$_2$O$_3$(0001) and Si(111)-(7$\times$7) surfaces by molecular beam epitaxy (MBE). Streaky RHEED patterns indicate flat smooth film growth on both substrates. STM studies show the hexagonal arrangements of surface atoms. Determination of the lattice parameter from atomically resolved STM image is consistent with the bulk crystal structures. Magnetic measurements show the film is ferromagnetic having the Curie temperature of about 180 K, and a spin glass-like behavior was observed below 35 K. Magneto-transport measurements show the metallic nature of the film with a perpendicular magnetic anisotropy along the $c$-axis.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Quantum transport simulation of exciton condensate transport physics in a double layer graphene system

Spatially indirect electron-hole exciton condensates stabilized by interlayer Fock exchange interactions have been predicted in systems containing a pair of two-dimensional semiconductor or semimetal layers separated by a thin tunnel dielectric. The layer degree of freedom in these systems can be described as a pseudospin. Condensation is then analogous to ferromagnetism, and the interplay between collective and quasiparticle contributions to transport is analogous to phenomena that are heavily studied in spintronics. These phenomena are the basis for pseudospintronic device proposals based on possible low-voltage switching between high (nearly shorted) and low interlayer conductance states and on near perfect Coulomb drag-counterflow current along the layers. In this work, a quantum transport simulator incorporating a non-local Fock exchange interaction is presented, and used to model the essential transport physics in the bilayer graphene system. Finite size effects, Coulomb drag-counterflow current, critical interlayer currents beyond which interlayer DC conductance collapses at sub-thermal voltages, non-local coupling between interlayer critical currents in multiple lead devices, and an Andreev-like reflection process are illustrated.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Atomistic simulation of the electronic states of adatoms in monolayer MoS2

Using an ab initio density functional theory (DFT) based electronic structure method, we study the effects of adatoms on the electronic properties of monolayer transition metal dichalcogenide (TMD) Molybdenum-disulfide (MoS2). We consider the 1st (Li, Na, K) and 7th (F, Cl, Br) column atoms and metals (Sc, Ti, Ta, Mo, Pd, Pt, Ag, Au). Three high symmetry sites for the adatom on the surface of monolayer MoS2 are examined as starting points to search for the most energetically stable configuration for each adatom-monolayer MoS2 system, as well as the type of associated bonding. For the most stable adatom positions, we characterize the emergence of adatom-induced electronic states including any dopant states.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) MOSFETs

We study the transport properties of monolayer MX2 (M = Mo, W; X = S, Se, Te) n- and p- channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic non-equilibrium Green's function simulations with an atomistic tight-binding Hamiltonian with hopping potentials obtained from density functional theory. We discuss the subthreshold slope, drain-induced barrier lowering (DIBL), as well as gate-induced drain leakage (GIDL) for different monolayer MX2 MOSFETs. We also report the possibility of negative differential resistance behavior in the output characteristics of nanoscale monolayer MX2 MOSFETs.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electronic and optical properties of GaSb:N from first principles

GaSb:N displays promise towards realization of optoelectronic devices accessing the mid-infrared wavelength regime. Theoretical and experimental results on its electronic and optical properties are however few. To address this, we present a first principles, density functional theory study using the hybrid HSE06 exchange-correlation functional of GaSb doped with 1.6$\%$ nitrogen. To study dilute-nitrides with small band gaps, the local density approximation (LDA) is insufficient and more accurate techniques such as HSE06 are needed. We conduct a comparative study on GaAs:N, also with 1.6$\%$ nitrogen mole fraction, and find that GaSb:N has a smaller band gap and displays more band gap bowing than GaAs:N. In addition we examine the orbital character of the bands, finding the lowest conduction band to be quasi-delocalized, with a large N-$3s$ contribution. At high concentrations, the N atoms interact via the host matrix, forming a dispersive band of their own which governs optoelectronic properties and dominates band gap bowing. While this band drives the optical and electronic properties of GaSb:N, its physics is not captured by traditional models for dilute-nitrides. We thus propose that a complete theory of dilute-nitrides should incorporate orbital character examination, especially at high N concentrations.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures

We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron-nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials indicates that the resonance occurs when the energy bands of the two bilayer graphene are aligned. We discuss the tunneling resistance dependence on the interlayer hBN thickness, as well as the resonance width dependence on mobility and rotational alignment.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Atomistic Full-Band Simulations of Monolayer MoS2 Transistors

We study the transport properties of deeply scaled monolayer MoS2 n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic quantum transport simulations with an atomistic tight-binding Hamiltonian obtained from density functional theory. Our simulations suggest that monolayer MoS2 MOSFETs can provide near-ideal subthreshold slope, and suppression of drain-induced barrier lowering (DIBL) and gate-induced drain leakage (GIDL). However, these full-band simulations also exhibit limited transconductance. These ballistic simulations also exhibit negative differential resistance (NDR) in the output characteristics associated with the narrow width in energy of the lowest conduction band, but this NDR may be substantially reduced or eliminated by scattering in MoS2.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Theory and synthesis of bilayer graphene intercalated with ICl and IBr for low power device applications

Graphene intercalation materials are potentially promising for the implementation of the ultra-low power, excitonic-condensate-based Bilayer pseudoSpin Field-Effect Transistor (BiSFET) concept, as well as other novel device concepts requiring a graphene interlayer dielectric. Using density functional theory (DFT) we study the structural and electronic properties of bilayer graphene intercalated with iodine monochloride (ICl) and iodine monobromide (IBr). We determine the structural configuration of ICl and IBr graphene intercalation compounds (GICs). We also conduct an in-depth exploration of inter-layer electronic coupling, using \textit{ab initio} calculations. The presence of intercalants dopes the graphene layer. It also reduces, but does not eliminate, the electronic coupling between graphene layers, which may enable BiSFET operation. In addition, we present experimental results for ICl-GIC synthesis and characterization.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Density functional theory studies of interactions of graphene with its environment: substrate, gate dielectric and edge effects

This paper reviews the theoretical work undertaken using density functional theory (DFT) to explore graphene's interactions with its surroundings. We look at the impact of substrates, gate dielectrics and edge effects on the properties of graphene. In particular, we focus on graphene-on-quartz and graphene-on-alumina systems, exploring their energy spectrum and charge distribution. Silicon-terminated quartz is found to not perturb the linear graphene spectrum. On the other hand, oxygen-terminated quartz and both terminations of alumina bond with graphene, leading to the opening of a band gap. Significant charge transfer is seen between the graphene layer and the oxide in the latter cases. Additionally, we review the work of others regarding the effect of various substrates on the electronic properties of graphene. Confining graphene to form nanoribbons also results in the opening of a band gap. The value of the gap is dependent on the edge properties as well as width of the nanoribbon.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions

We report a method of fabricating self-aligned, top-gated graphene field-effect transistors (GFETs) employing polyethyleneimine spin-on-doped source/drain access regions, resulting in a 2X reduction of access resistance and a 2.5X improvement in device electrical characteristics, over undoped devices. The GFETs on Si/SiO$_2$ substrates have high carrier mobilities of up to 6,300 cm$^2$/Vs. Self-aligned spin-on-doping is applicable to GFETs on arbitrary substrates, as demonstrated by a 3X enhancement in performance for GFETs on insulating quartz substrates, which are better suited for radio frequency applications.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Topological Classification of Crystalline Insulators with Point Group Symmetry

We show that in crystalline insulators point group symmetry alone gives rise to a topological classification based on the quantization of electric polarization. Using C3 rotational symmetry as an example, we first prove that the polarization is quantized and can only take three inequivalent values. Therefore, a Z3 topological classification exists. A concrete tight-binding model is derived to demonstrate the Z3 topological phase transition. Using first-principles calculations, we identify graphene on BN substrate as a possible candidate to realize the Z3 topological states. To complete our analysis we extend the classification of band structures to all 17 two-dimensional space groups. This work will contribute to a complete theory of symmetry conserved topological phases and also elucidate topological properties of graphene like systems.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Topological insulator Bi2Se3 thin films as an alternative channel material in MOSFETs

Three-dimensional (3-D) topological insulators (TI) are characterized by the presence of metallic surface states and a bulk band gap. Recently theoretical and experimental studies have shown an induced gap in the surface state bands of TI thin films. The gap results from interaction of conduction band (CB) and valence band (VB) surface states from the opposite surfaces of a thin film, and its size is determined by the film thickness. This gap formation could open the possibility of thin-film TI-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Here we explore the performance of MOSFETs based on TI thin films, specifically Bi2Se3, using quantum ballistic transport simulations with the tight-binding Hamiltonian in the atomic orbital basis. Our simulations indicate that Bi2Se3 MOSFET will be vulnerable to short-channel effects due to the high relative dielectric constant of Bi2Se3(~100)despite its expected excellent electrostatic integrity inherent in a two-dimensional system, and will have other limitations as compared to silicon-based MOSFETs. However, Bi2Se3 MOSFETs, and presumably other TI-based MOSFETs, appear to provide reasonable performance that perhaps could provide novel device opportunities when combined with novel TI properties such as spin-polarized surface states.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Uniform wafer-scale synthesis of graphene on evaporated Cu (111) film with quality comparable to exfoliated monolayer

Monolayer graphene has been grown on crystallized Cu (111) films on standard oxidized Si 100 mm wafers. The monolayer graphene demonstrates high uniformity (>97% coverage), with immeasurable defects (>95% defect-negligible) across the entire wafer. Key to these results is the phase transition of evaporated copper films from amorphous to crystalline at the growth temperature as corroborated by X-ray diffraction and electron backscatter diffraction. Noticeably, phase transition of copper film is observed on technologically ubiquitous oxidized Si wafer where the oxide is a standard amorphous thermal oxide. Ion mass spectroscopy indicates that the copper films can be purposely hydrogen-enriched during a hydrogen anneal which subsequently affords graphene growth with a sole carbonaceous precursor for low defect densities. Owing to the strong hexagonal lattice match, the graphene domains align to the Cu (111) domains, suggesting a pathway for increasing the graphene grains by maximizing the copper grain sizes. Fabricated graphene transistors on a flexible polyimide film yield a peak carrier mobility ~4,930 cm2/Vs.

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preprint2011arXiv

Density Functional Study of Ternary Topological Insulator Thin Films

Using an ab-initio density functional theory based electronic structure method with a semi-local density approximation, we study thin-film electronic properties of two topological insulators based on ternary compounds of Tl (Thallium) and Bi (Bismuth). We consider TlBiX$_2$ (X=Se, Te) and Bi$_2$$X$_2$Y (X,Y= Se,Te) compounds which provide better Dirac cones, compared to the model binary compounds Bi$_2$X$_3$ (X=Se, Te). With this property in combination with a structurally perfect bulk crystal, the latter ternary compound has been found to have improved surface electronic transport in recent experiments. In this article, we discuss the nature of surface states, their locations in the Brillouin zone and their interactions within the bulk region. Our calculations suggest a critical thin film thickness to maintain the Dirac cone which is significantly smaller than that in binary Bi-based compounds. Atomic relaxations or rearrangements are found to affect the Dirac cone in some of these compounds. And with the help of layer-projected surface charge densities, we discuss the penetration depth of the surface states into the bulk region. The electronic spectrum of these ternary compounds agrees very well with the available experimental results.

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preprint2011arXiv

Density functional theory based study of graphene and dielectric oxide interfaces

We study the effects of insulating oxides in their crystalline forms on the energy band structure of monolayer and bilayer graphene using a \textit{first principles} density functional theory based electronic structure method and a local density approximation. We consider the dielectric oxides, SiO$_{2}$ ($α$-quartz) and Al$_{2}$O$_{3}$ (alumina or $α$-sapphire) each with two surface terminations. Our study suggests that atomic relaxations and resulting equilibrium separations play a critical role in perturbing the linear band structure of graphene in contrast to the less critical role played by dangling bonds that result from cleaving the crystal in a particular direction. We also see that with the addition of a second graphene layer, the Dirac cone is restored for the quartz surface terminations. Alumina needs more than two graphene layers to preserve the Dirac cone. Our results are at best semi-quantitative for the common amorphous forms of the oxides considered. However, crystalline oxides for which our results are quantitative provide an interesting option for graphene based electronics, particularly in light of recent experiments on graphene with crystalline dielectrics (hexagonal BN) that find considerable improvements in transport properties as compared to the those with amorphous dielectrics.

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preprint2011arXiv

Dielectric capping effects on binary and ternary topological insulator surface states

Using a density functional based electronic structure method, we study the effect of crystalline dielectrics on the metallic surface states of Bismuth- and chalcogen-based binary and ternary three dimensional topological insulator (TI) thin films. Crystalline quartz (SiO2) and boron nitride (BN) dielectrics were considered. Crystalline approximation to the amorphous quartz allows to study the effect of oxygen coverage or environmental effects on the surface states degradation which has gained attention recently in the experimental community. We considered both symmetric and asymmetric dielectric cappings to the sufaces of TI thin films. Our studies suggest that BN and quartz cappings have negligible effects on the Dirac cone surface states of both binary and ternary TIs, except in the case of an oxygen-terminated quartz surface. Dangling bond states of oxygens in oxygen-terminated quartz dominate the region close to Fermi level, thereby distorting the TI Dirac cone feature and burying the Dirac point in the quartz valence band region. Passivating the oxygen-terminated surface with atomic hydrogen removes these dangling bond states from the Fermi surface region, and consequently the clear Dirac cone is recovered. Our results are consistent with recent experimental studies of TI surface degradation in the presence of oxygen coverage.

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preprint2011arXiv

Edge Saturation effects on the magnetism and band gaps in multilayer graphene ribbons and flakes

Using a density functional theory based electronic structure method and semi-local density approximation, we study the interplay of geometric confinement, magnetism and external electric fields on the electronic structure and the resulting band gaps of multilayer graphene ribbons whose edges are saturated with molecular hydrogen (H$_2$) or hydroxyl (OH) groups. We discuss the similarities and differences of computed features in comparison with the atomic hydrogen (or H-) saturated ribbons and flakes. For H$_2$ edge-saturation, we find \emph{shifted} labeling of three armchair ribbon classes and magnetic to non-magnetic transition in narrow zigzag ribbons whose critical width changes with the number of layers. Other computed characteristics, such as the existence of a critical gap and external electric field behavior, layer dependent electronic structure, stacking-dependent band gap induction and the length confinement effects remain qualitatively same with those of H-saturated ribbons.

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preprint2010arXiv

Effects of edge magnetism and external electric field on energy gaps in multilayer graphene nanoribbons

Using first-principles density-functional theory, we study the electronic structure of multilayer graphene nanoribbons as a function of the ribbon width and the external electric field, applied perpendicular to the ribbon layers. We consider two types of edges (armchair and zigzag), each with two edge alignments (referred to as alpha- and beta-alignments). We show that, as in monolayer and bilayer armchair nanoribbons, multilayer armchair nanoribbons exhibit three classes of energy gaps which decrease with increasing width. Nonmagnetic multilayer zigzag nanoribbons have band structures that are sensitive to the edge alignments and the number of layers, indicating different magnetic properties and resulting energy gaps. We find that energy gaps can be induced in ABC-stacked ribbons with a perpendicular external electric field while in other stacking sequences, the gaps decrease or remain closed as the external electric field increases.

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preprint2010arXiv

Effects of magnetism and electric field on the energy gap of bilayer graphene nanoflakes

We study the effect of magnetism and perpendicular external electric field strengths on the energy gap of length confined bilayer graphene nanoribbons (or nanoflakes) as a function of ribbon width and length using a \textit{first principles} density functional electronic structure method and a semi-local exchange-correlation approximation. We assume AB (Bernal) bilayer stacking and consider both armchair and zigzag edges, and for each edge type, we consider the two edge alignments, namely, $α$ and $β$ edge alignment. For the armchair nanoflakes we identify three distinct classes of bilayer energy gaps, determined by the number of carbon chains in the width direction ({\it N} = 3{\it p}, 3{\it p}+1 and 3{\it p}+2, {\it p} is an integer), and the gaps decrease with increasing width except for class 3{\it p}+2 armchair nanoribbons. Metallic-like behavior seen in armchair bilayer nanoribbons are found to be absent in armchair nanoflakes. Class 3{\it p}+2 armchair nanoflakes show significant length dependence. We find that the gaps decrease with the applied electric fields due to large intrinsic gap of the nanoflake. The existence of a critical gap with respect to the applied field, therefore, is not predicted by our calculations. Magnetism between the layers plays a major role in enhancing the gap values resulting from the geometrical confinement, hinting at an interplay of magnetism and geometrical confinement in finite size bilayer graphene.

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preprint2010arXiv

Graphene on Insulating Oxide Substrates: Role of Surface Dangling States

We study the effect of insulating oxide substrates on the energy band structure of monolayer and bilayer graphene using a first principles density functional based electronic structure method and a local exchange correlation approximation. We consider two crystalline substrates, SiO2 (or alpha-quartz) and Al2O3 (alpha-alumina or sapphire), each with two surface terminations. We focus on the role of substrate surface dangling states and their passivation in perturbing the linear energy spectrum of graphene. On non-passivated surface terminations, with the relaxation of top surface layers, only Si-terminated quartz retains the linear band structure of graphene due to relatively large equilibrium separation from the graphene layer whereas the other three surface terminations considerably distort it. However, without relaxations of the top surface layer atoms, linear bands appear in the electronic spectrum but with the Dirac point shifted away from the Fermi level. Interestingly, with a second carbon layer on non-passivated oxygen terminated Quartz, with top surface layers relaxation, graphene features appear in the spectrum but sapphire with both surface terminations shows perturbed features even with two carbon layers. By passivating the surface dangling states with hydrogen atoms and without top layer atomic relaxations, the electron-hole symmetry occurs exactly at the Fermi level. This suggests that surface dangling states play a less important role than the atomic relaxations of the top surface layers in distorting the linear spectrum. In all cases we find that the first layer of graphene forms ripples, much like in suspended graphene, but the strength of rippling is found to be weaker probably due to the presence of the substrate.

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preprint2010arXiv

Intrinsic and extrinsic perturbations on the topological insulator Bi2Se3 surface states

Using a density functional based electronic structure method, we study the effect of perturbations on the surface state Dirac cone of a strong topological insulator Bi$_2$Se$_3$ from both the intrinsic and extrinsic sources. We consider atomic relaxations, and film thickness as intrinsic and interfacial thin dielectric films as an extrinsic source of perturbation to the surface states. We find that atomic relaxations has no effect on the degeneracy of the Dirac cone whereas film thickness has considerable effect on the surface states inducing a gap which increases monotonically with decrease in film thickness. We consider two insulating substrates BN and quartz as dielectric films and show that surface terminations of quartz with or without passivation plays critical role in preserving Dirac cone degeneracy whereas BN is more inert to the TI surface states. The relative orbital contribution with respect to bulk is mapped out using a simple algorithm, and with the help of it we demonstrate the bulk band inversion when spin-orbit coupling is switched on. The layer projected charge density distributions of the surface states shows that these states are not strictly confined to the surface. The spatial confinement of these states extends up to two to three quintuple layers, a quintuple layer consists of five atomic layers of Bi and Se

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preprint2009arXiv

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

Graphene has been attracting great interest because of its distinctive band structure and physical properties. Today, graphene is limited to small sizes because it is produced mostly by exfoliating graphite. We grew large-area graphene films of the order of centimeters on copper substrates by chemical vapor deposition using methane. The films are predominantly single layer graphene with a small percentage (less than 5%) of the area having few layers, and are continuous across copper surface steps and grain boundaries. The low solubility of carbon in copper appears to help make this growth process self-limiting. We also developed graphene film transfer processes to arbitrary substrates, and dual-gated field-effect transistors fabricated on Si/SiO2 substrates showed electron mobilities as high as 4050 cm2V-1s-1 at room temperature.

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preprint2009arXiv

Scaling Properties of Ge-SixGe1-x Core-Shell Nanowire Field Effect Transistors

We demonstrate the fabrication of high-performance Ge-SixGe1-x core-shell nanowire field-effect transistors with highly doped source and drain, and systematically investigate their scaling properties. Highly doped source and drain regions are realized by low energy boron implantation, which enables efficient carrier injection with a contact resistance much lower than the nanowire resistance. We extract key device parameters, such as intrinsic channel resistance, carrier mobility, effective channel length, and external contact resistance, as well as benchmark the device switching speed and ON/OFF current ratio.

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