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S. V. Thakare

S. V. Thakare appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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nucl-exphysics.ins-detphysics.chem-ph

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Published work

3 published item(s)

preprint2016arXiv

Study of Electric Quadrupole Perturbation at Multiple Probe Sites in Hf-doped Rutile in a Single Perturbed γ-γ Angular Correlation Measurement

Two different probes, viz., 111In/111Cd and 181Hf/181Ta, simultaneously have been incorporated in both pure rutile and Hafnium (Hf) -doped rutile Titanium Dioxide (TiO2) systems following a soft chemical method. The local information around two different probe sites in the same sample could be extracted in a single Time Differential Perturbed Angular Correlation (TDPAC) measurement using LIST mode data acquisition. The two probes were incorporated in the rutile samples by co-precipitation technique and then annealed at 1273K for 10h to get the rutile structure. The rutile structure was identified by the hyperfine parameters, viz., quadrupole frequency (ωQ) and asymmetry (eta). At 111Cd site, ωQ=16.8(1) Mrad/s and eta=0.19(1) while at 181Ta site, ωQ=127.2(2) Mrad/s and eta=0.56(1). Due to the doping of Hf at 5 and 10 atom%, the sample partially lost the purity of the crystal and the fact has been reflected at both the probe sites.

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preprint2014arXiv

Characterization of neutron transmutation doped (NTD) Ge for low temperature sensor development

Development of NTD Ge sensors has been initiated for low temperature (mK) thermometry in The India-based Tin detector (TIN.TIN). NTD Ge sensors are prepared by thermal neutron irradiation of device grade Ge samples at Dhruva reactor, BARC, Mumbai. Detailed measurements have been carried out in irradiated samples for estimating the carrier concentration and fast neutron induced defects. The Positron Annihilation Lifetime Spectroscopy (PALS) measurements indicated monovacancy type defects for all irradiated samples, while Channeling studies employing RBS with 2 MeV alpha particles, revealed no significant defects in the samples exposed to fast neutron fluence of $\sim 4\times10^{16}/cm^2$. Both PALS and Channeling studies have shown that vacuum annealing at 600 $^\circ$C for $\sim2$ hours is sufficient to recover the damage in the irradiated samples, thereby making them suitable for the sensor development.

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preprint2014arXiv

Study of Radioactive Impurities in Neutron Transmutation Doped Germanium

A program to develop low temperature (mK) sensors with neutron transmutation doped Ge for rare event studies with a cryogenic bolometer has been initiated. For this purpose, semiconductor grade Ge wafers are irradiated with thermal neutron flux from Dhruva reactor at BARC, Mumbai. Spectroscopic studies of irradiated samples have revealed that the environment of the capsule used for irradiating the sample leads to significant levels of $^{65}$Zn, $^{110}$Ag and $^{182}$Ta impurities, which can be reduced by chemical etching of approximately $\sim50 μ$m thick surface layer. From measurements of the etched samples in the low background counting setup, activity due to trace impurities of $^{123}$Sb in bulk Ge is estimated to be $\sim$ 1 Bq/gm after irradiation. These estimates indicate that in order to use the NTD Ge sensors for rare event studies, a cool down period of $\sim$ 2 years would be necessary to reduce the radioactive background to $\le$ 1 mBq/gm.

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