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K. C. Jagadeesan

K. C. Jagadeesan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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nucl-exphysics.ins-det

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Published work

2 published item(s)

preprint2014arXiv

Characterization of neutron transmutation doped (NTD) Ge for low temperature sensor development

Development of NTD Ge sensors has been initiated for low temperature (mK) thermometry in The India-based Tin detector (TIN.TIN). NTD Ge sensors are prepared by thermal neutron irradiation of device grade Ge samples at Dhruva reactor, BARC, Mumbai. Detailed measurements have been carried out in irradiated samples for estimating the carrier concentration and fast neutron induced defects. The Positron Annihilation Lifetime Spectroscopy (PALS) measurements indicated monovacancy type defects for all irradiated samples, while Channeling studies employing RBS with 2 MeV alpha particles, revealed no significant defects in the samples exposed to fast neutron fluence of $\sim 4\times10^{16}/cm^2$. Both PALS and Channeling studies have shown that vacuum annealing at 600 $^\circ$C for $\sim2$ hours is sufficient to recover the damage in the irradiated samples, thereby making them suitable for the sensor development.

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preprint2014arXiv

Study of Radioactive Impurities in Neutron Transmutation Doped Germanium

A program to develop low temperature (mK) sensors with neutron transmutation doped Ge for rare event studies with a cryogenic bolometer has been initiated. For this purpose, semiconductor grade Ge wafers are irradiated with thermal neutron flux from Dhruva reactor at BARC, Mumbai. Spectroscopic studies of irradiated samples have revealed that the environment of the capsule used for irradiating the sample leads to significant levels of $^{65}$Zn, $^{110}$Ag and $^{182}$Ta impurities, which can be reduced by chemical etching of approximately $\sim50 μ$m thick surface layer. From measurements of the etched samples in the low background counting setup, activity due to trace impurities of $^{123}$Sb in bulk Ge is estimated to be $\sim$ 1 Bq/gm after irradiation. These estimates indicate that in order to use the NTD Ge sensors for rare event studies, a cool down period of $\sim$ 2 years would be necessary to reduce the radioactive background to $\le$ 1 mBq/gm.

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