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Researcher profile

S. V. Morozov

S. V. Morozov contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

4 published item(s)

preprint2023arXiv

Terahertz cyclotron emission from two-dimensional Dirac fermions

Since the emergence of graphene, we have seen several proposals for the realization of Landau lasers tunable over the terahertz frequency range. The hope was that the non-equidistance of the Landau levels from Dirac fermions would suppress the harmful non-radiative Auger recombination. Unfortunately, even with this non-equidistance an unfavorable non-radiative process persists in Landau-quantized graphene, and so far no cyclotron emission from Dirac fermions has been reported. One way to eliminate this last non-radiative process is to sufficiently modify the dispersion of the Landau levels by opening a small gap in the linear band structure. A proven example of such gapped graphene-like materials are HgTe quantum wells close to the topological phase transition. In this work, we experimentally demonstrate Landau emission from Dirac fermions in such HgTe quantum wells, where the emission is tunable by both the magnetic field and the carrier concentration. Consequently, these results represent an advance in the realization of terahertz Landau lasers tunable by magnetic field and gate-voltage.

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preprint2010arXiv

Electronic properties of a biased graphene bilayer

We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system -- \emph{biased bilayer}. The effect of the perpendicular electric field is included through a parallel plate capacitor model, with screening correction at the Hartree level. The full tight-binding description is compared with its 4-band and 2-band continuum approximations, and the 4-band model is shown to be always a suitable approximation for the conditions realized in experiments. The model is applied to real biased bilayer devices, either made out of SiC or exfoliated graphene, and good agreement with experimental results is found, indicating that the model is capturing the key ingredients, and that a finite gap is effectively being controlled externally. Analysis of experimental results regarding the electrical noise and cyclotron resonance further suggests that the model can be seen as a good starting point to understand the electronic properties of graphene bilayer. Also, we study the effect of electron-hole asymmetry terms, as the second-nearest-neighbor hopping energies $t'$ (in-plane) and $γ_{4}$ (inter-layer), and the on-site energy $Δ$.

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preprint2010arXiv

From One Electron to One Hole: Quasiparticle Counting in Graphene Quantum Dots Determined by Electrochemical and Plasma Etching

Graphene is considered to be a promising material for future electronics. The envisaged transistor applications often rely on precision cutting of graphene sheets with nanometer accuracy. In this letter we demonstrate graphene-based quantum dots created by using atomic force microscopy (AFM) with tip-assisted electrochemical etching. This lithography technique provides resolution of about 20 nm, which can probably be further improved by employing sharper tips and better humidity control. The behavior of our smallest dots in magnetic field has allowed us to identify the charge neutrality point and distinguish the states with one electron, no charge and one hole left inside the quantum dot.

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preprint2009arXiv

Influence of metal contacts and charge inhomogeneity on transport properties of graphene near the neutrality point

There is an increasing amount of literature concerning electronic properties of graphene close to the neutrality point. Many experiments continue using the two-probe geometry or invasive contacts or do not control samples' macroscopic homogeneity. We believe that it is helpful to point out some problems related to such measurements. By using experimental examples, we illustrate that the charge inhomogeneity induced by spurious chemical doping or metal contacts can lead to large systematic errors in assessing graphene's transport properties and, in particular, its minimal conductivity. The problems are most severe in the case of two-probe measurements where the contact resistance is found to strongly vary as a function of gate voltage.

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