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S. V. Ivanov

S. V. Ivanov appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciComputational Engineering, Finance, and Sciencecond-mat.otherphysics.opticsphysics.soc-phSocial and Information Networks

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Published work

17 published item(s)

preprint2020arXiv

Magneto-intersubband oscillations in two dimensional systems with energy spectrum split due to spin-orbit interaction

In the present paper we study magneto-intersubband oscillations (MISO) in HgTe/Hg$_{1-x}$Cd$_x$Te single quantum well with "inverted" and "normal" spectra and in conventional In$_{1-x}$Ga$_x$As/In$_{1-y}$Al$_y$As quantum wells with normal band ordering. For all the cases when two branches of the spectrum arise due to spin-orbit splitting, the mutual arrangement of the antinodes of the Shubnikov-de Haas oscillations and the maxima of MISO occurs opposite to that observed in double quantum wells and in wide quantum wells with two subbands occupied and does not agree with the theoretical predictions. A "toy" model is supposed that explain qualitatively this unusual result.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Optical activity of quantum wells

We report on the observation of optical activity of quantum wells resulting in the conversion of the light polarization state controlled by the light propagation direction. The polarization conversion is detected in reflection measurements. We show that a pure $s$-polarized light incident on a quantum well is reflected as an elliptically polarized wave. The signal is drastically enhanced in the vicinity of the light-hole exciton resonance. We show that the polarization conversion is caused by the spin-orbit splitting of the light hole states and the birefringence of the studied structure. The bulk inversion asymmetry constant $β_{h} \approx 0.14$ eVÅ, is determined for the ground light hole subband in a 10 nm ZnSe/ZnMgSSe quantum well.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Optical spectroscopy of single beryllium acceptors in GaAs/AlGaAs quantum well

We carry out microphotoluminescence measurements of an acceptor-bound exciton (A^0X) recombination in the applied magnetic field with a single impurity resolution. In order to describe the obtained spectra we develop a theoretical model taking into account a quantum well (QW) confinement, an electron-hole and hole-hole exchange interaction. By means of fitting the measured data with the model we are able to study the fine structure of individual acceptors inside the QW. The good agreement between our experiments and the model indicates that we observe single acceptors in a pure two-dimensional environment whose states are unstrained in the QW plain.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

III-nitride tunable cup-cavities supporting quasi whispering gallery modes from ultraviolet to near infrared

Rapidly developing nanophotonics needs microresonators for different spectral ranges, formed by chip-compatible technologies. In addition, the tunable ones are in greatest demand. Here, we present epitaxial site--controlled III--nitride cup--cavities which can operate from ultraviolet to near--infrared, supporting quasi whispering gallery modes up to room temperature. In these cavities, the refractive index variation near an absorption edge causes the remarkable effect of mode switching, which is accompanied by the change of spatial intensity distribution, concentration of light efficiently into a subwavelength volume, and emission of terahertz photons. At a distance from the edge, the mode-related narrow emission lines have stable energies and widths at different temperatures. Moreover, their energies are identical in the large 'ripened' monocrystal cavities. Our results shed light on the mode behavior in the semiconductor cavities and open the way for single--growth--run manufacturing the devices comprising an active region and a cavity with tunable mode frequencies.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Magnetooptical Study of Zeeman Effect in Mn modulation-doped InAs/InGaAs/InAlAs Quantum Well Structures

We report on a magneto-photoluminescence (PL) study of Mn modulation-doped InAs/InGaAs/InAlAs quantum wells. Two PL lines corresponding to the radiative recombination of photoelectrons with free and bound-on-Mn holes have been observed. In the presence of a magnetic field applied in the Faraday geometry both lines split into two circularly polarized components. While temperature and magnetic field dependences of the splitting are well described by the Brillouin function, providing an evidence for exchange interaction with spin polarized manganese ions, the value of the splitting exceeds the expected value of the giant Zeeman splitting by two orders of magnitude for a given Mn density. Possible reasons of this striking observation are discussed.

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preprint2014arXiv

Magneto-Photoluminescence of InAs/InGaAs/InAlAs quantum well structures

Photoluminescence (PL) and highly circularly-polarized magneto-PL (up to 50% at 6 T) from two-step bandgap InAs/InGaAs/InAlAs quantum wells (QWs) are studied. Bright PL is observed up to room temperature, indicating a high quantum efficiency of the radiative recombination in these QW. The sign of the circular polarization indicates that it stems from the spin polarization of heavy holes caused by the Zeeman effect. Although in magnetic field the PL line are strongly circularly polarized, no energy shift between the counter-polarized PL lines was observed. The results suggest that the electron and the hole g-factor to be of the same sign and close magnitudes.

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preprint2014arXiv

The dynamics of amplified spontaneous emission in CdSe/ZnSe quantum dots

We have used the variable stripe technique and pump-probe spectroscopy to investigate both gain and the dynamics of amplified spontaneous emission from CdSe quantum dot structures. We have found modal gain coefficients of 75 and 32 1/cm for asymmetric and symmetric waveguide structures, respectively. Amplified spontaneous emission decay times of 150 and 300 ps and carrier capture times of 15 and 40 ps were measured for the structures with high and low material gains respectively. The difference in the capture times are related to the fact that for the symmetric waveguide, carriers diffuse into the active region from the uppermost ZnMgSSe cladding layer, yielding a longer rise time for the pump-probe signals for this sample.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Distributed simulation of city inundation by coupled surface and subsurface porous flow for urban flood decision support system

We present a decision support system for flood early warning and disaster management. It includes the models for data-driven meteorological predictions, for simulation of atmospheric pressure, wind, long sea waves and seiches; a module for optimization of flood barrier gates operation; models for stability assessment of levees and embankments, for simulation of city inundation dynamics and citizens evacuation scenarios. The novelty of this paper is a coupled distributed simulation of surface and subsurface flows that can predict inundation of low-lying inland zones far from the submerged waterfront areas, as observed in St. Petersburg city during the floods. All the models are wrapped as software services in the CLAVIRE platform for urgent computing, which provides workflow management and resource orchestration.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electrical anisotropy of heteroepitaxial InSb/GaAs layers

We report on study of electrical and structural properties of InSb/GaAs(001) heteroepitaxial layers in [110] and [1-10] crystallographic directions. Strong anisotropy of electron transport parameters measured at a low magnetic field has been found, whereas the electrical transport through the InSb bulk layer studied by Shubnikov-de Haas oscillations is shown to be independent of the crystallographic directions. The low-field electrical anisotropy of the InSb films appears to be governed by two competitive anisotropic effects: influence of spontaneously formed In nanoclusters inhomogeneously distributed within the InSb layers and conductivity through the near-interface layer with high anisotropic density of extended defects.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Continuous Models of Epidemic Spreading in Heterogeneous Dynamically Changing Random Networks

Modeling spreading processes in complex random networks plays an essential role in understanding and prediction of many real phenomena like epidemics or rumor spreading. The dynamics of such systems may be represented algorithmically by Monte-Carlo simulations on graphs or by ordinary differential equations (ODEs). Despite many results in the area of network modeling the selection of the best computational representation of the model dynamics remains a challenge. While a closed form description is often straightforward to derive, it generally cannot be solved analytically; as a consequence the network dynamics requires a numerical solution of the ODEs or a direct Monte-Carlo simulation on the networks. Moreover, Monte-Carlo simulations and ODE solutions are not equivalent since ODEs produce a deterministic solution while Monte-Carlo simulations are stochastic by nature. Despite some recent advantages in Monte-Carlo simulations, particularly in the flexibility of implementation, the computational cost of an ODE solution is much lower and supports accurate and detailed output analysis such as uncertainty or sensitivity analyses, parameter identification etc. In this paper we propose a novel approach to model spreading processes in complex random heterogeneous networks using systems of nonlinear ordinary differential equations. We successfully apply this approach to predict the dynamics of HIV-AIDS spreading in sexual networks, and compare it to historical data.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Photoluminescence studies of Zeeman effect in type-II InSb/InAs nanostructures

Electron spin polarization up to 100% has been observed in type-II narrow-gap heterostructures with ultrathin InSb insertions in an InAs matrix via investigation of circularly polarized photoluminescence in an external magnetic field applied in Faraday geometry. The polarization degree decreases drastically, changes its sign, and saturates finally at the value of 10% in the limit of either high temperature or strong excitation. The observed effect is explained in terms of strong Zeeman splitting of the electron conduction band in the InAs matrix and a heavy-hole state confined in the InSb insertion, due to a large intrinsic g-factor of both types of carriers. The hole ground state in a monolayer scale InSb/InAs quantum well, calculated using a tight-binding approach, fits well the observed emission wavelength. Temperature dependence of the emission polarization degree is in good agreement with its theoretical estimation performed in the framework of a proposed phenomenological model.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin-polarized electric currents in diluted magnetic semiconductor heterostructures induced by terahertz and microwave radiation

We report on the study of spin-polarized electric currents in diluted magnetic semiconductor (DMS) quantum wells subjected to an in-plane external magnetic field and illuminated by microwave or terahertz radiation. The effect is studied in (Cd,Mn)Te/(Cd,Mg)Te quantum wells (QWs) and (In,Ga)As/InAlAs:Mn QWs belonging to the well known II-VI and III-V DMS material systems, as well as, in heterovalent AlSb/InAs/(Zn,Mn)Te QWs which represent a promising combination of II-VI and III-V semiconductors. Experimental data and developed theory demonstrate that the photocurrent originates from a spin-dependent scattering of free carriers by static defects or phonons in the Drude absorption of radiation and subsequent relaxation of carriers. We show that in DMS structures the efficiency of the current generation is drastically enhanced compared to non-magnetic semiconductors. The enhancement is caused by the exchange interaction of carrier spins with localized spins of magnetic ions resulting, on the one hand, in the giant Zeeman spin-splitting, and, on the other hand, in the spin-dependent carrier scattering by localized Mn2+ ions polarized by an external magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Diluted magnetic semiconductor heterostructure AlSb/InAs/ZnMnTe with giant Zeeman effect for two dimensional electrons in InAs

A new approach to the growth of diluted magnetic semiconductors with two dimensional electron gas in InAs quantum well has been developed. The method is based on molecular-beam epitaxy of coherent "hybrid" AlSb/InAs/(Zn,Mn)Te heterostructures with a III-V/II-VI interface inside. The giant Zeeman splitting of the InAs conduction band caused by exchange interaction with Mn2+ ions has been proved by measuring the microwave radiation induced spin polarized electric currents.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Identification of main contributions to conductivity of epitaxial InN

Complex effect of different contributions (spontaneously formed In nanoparticles, near-interface, surface and bulk layers) on electrophysical properties of InN epitaxial films is studied. Transport parameters of the surface layer are determined from the Shubnikov-de Haas oscillations measured in undoped and Mg-doped InN films at magnetic fields up to 63 T. It is shown that the In nanoparticles, near-interface and bulk layers play the dominant role in the electrical conductivity of InN, while influence of the surface layer is pronounced only in the compensated low-mobility InN:Mg films.

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preprint2011arXiv

Long-lived electron spin coherence in CdSe/ZnSSe self-assembled quantum dots

The electron spin coherence in n-doped and undoped, self-assembled CdSe/Zn(S,Se) quantum dots has been studied by time-resolved pump-probe Kerr rotation. Long-lived spin coherence persisting up to 13 ns after spin orientation has been found in the n-doped quantum dots, outlasting significantly the lifetimes of charge neutral and negatively charged excitons of 350 - 530 ps. The electron spin dephasing time as long as 5.6 ns has been measured in a magnetic field of 0.25 T. Hyperfine interaction of resident electrons with a nuclear spin fluctuations is suggested as the main limiting factor for the dephasing time. The efficiency of this mechanism in II-VI and III-V quantum dots is analyzed.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Terahertz radiation due to random grating coupled surface plasmon polaritons

We report on terahertz (THz) radiation under electrical pumping from a degenerate semiconductor possessing an electron accumulation layer. In InN, the random grating formed by topographical defects provides high-efficiency coupling of surface plasmon polaritons supported by the accumulation layer to the THz emission. The principal emission band occupies the 2-6 THz spectral range. We establish a link between the shape of emission spectra and the structural factor of the random grating and show that the change of slope of power dependencies is characteristic for temperature-dependent plasmonic mechanisms. The super-linear rise of a THz emission intensity on applied electric power provides advantage of such materials in emission yield.

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